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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Plasma dynamics, instabilities and OH generation in a pulsed atmospheric pressure plasma with liquid cathode: a diagnostic study

Abstract While plasma–liquid interactions have been an important focus in the plasma research community, the impact of the strong coupling between plasma and liquid on plasma properties and processes remains not fully understood. In this work, we report on the impact of the applied voltage, pulse width and liquid conductivity on the plasma morphology and the OH generation for a positive pulsed DC atmospheric pressure plasma jet with He–0.1% H 2 O mixture interacting with a liquid cathode. We adopted diagnostic techniques of fast imaging, 2D laser induced fluorescence of OH and Thomson scattering spectroscopy. We show that plasma instabilities and enhanced evaporation occur and have a significant impact on the OH generation. At elevated plasma energies, it is found that the plasma contracts due to a thermal instability through Ohmic heating and the contraction coincides with a depletion in the OH density in the core due to electron impact dissociation. For lower plasma energies, the instability is suppressed/delayed by the equivalent series resistor of the liquid electrode. An estimation of the energy flux from the plasma to the liquid shows that the energy flux of the ions released into the liquid by positive ion hydration is dominant, and significantly larger than the energy needed to evaporate sufficient amount of water to account for the measured H 2 O concentration increase near the plasma–liquid interface.

Physics↗
DOE OSTI2020

Optimization and characterization of a silicon photomultiplier-based ZnS(Ag) proton recoil fast neutron detector for nuclear fuel performance monitoring at TREAT

The restart of the Transient Reactor Test Facility (TREAT) at Idaho National Laboratory and consequent refurbishment of the Fuel Motion Monitoring System (FMMS), or Hodoscope, offers the opportunity to upgrade the detector system used for neutron imaging. Silicon photomultipliers (SiPMs) are a viable option for updating the Hodoscope to yield improved fuel monitoring capability. The Hodoscope uses ZnS(Ag) proton recoil scintillators (PRS) that provide good gamma-ray suppression and discrimination. Previous work showed that the Hamamatsu S13360-6075CS SiPM offers the best neutron detection and gamma-ray discrimination capability with the ZnS PRS. This work optimizes a SiPM-based detector and develops a PRS prototype for testing. Specifically, possible overvoltages for use are determined by confirming steady operation over extended measurement times. In addition, various SiPM-circuit implementations are tested to optimize the detector according to desired properties, and ultimately a PRS prototype is developed with modifiable components for versatile testing. Measurements of the neutron detection efficiency and gamma-ray rejection efficiency of SiPM-based PRS detectors and a reference PMT-based detector are also carried out. Neutron detection efficiency ranges between 1-2%, and detected gamma-ray rejection efficiency is on the order of 10 -7 . In conclusion, use of a low-pass filter only or a low-pass filter and 50-ω shunt resistor is recommended for the SiPM-based detector, and both configurations demonstrate improved performance over the PMT-based detector.

46 - INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AN↗
DOE OSTI2023

Specifications and pre-production of n + -in-p large-format strip sensors fabricated in 6-inch silicon wafers, ATLAS18, for the Inner Tracker of the ATLAS Detector for High-Luminosity Large Hadron Collider

Abstract The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n + -strips, so-called n + -in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 × 9.8 cm 2 , geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures.

Instruments & Instrumentation↗
DOE OSTI2025

Network analysis of memristive device circuits: dynamics, stability and correlations

Abstract Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the information-processing of neurons. The resistance in a memristive device depends on the history of the applied bias and thus displays a type of memory. The interplay of this memory with the dynamic properties of the network can give rise to new behavior, offering many fascinating theoretical challenges. But methods to analyze general memristive circuits are not well described in the literature. In this paper we develop a general circuit analysis for networks that combine memristive devices alongside resistors, capacitors and inductors and under various types of control. We derive equations of motion for the memory parameters of these circuits and describe the conditions for which a network should display properties characteristic of a resonator system. For the case of a purely memresistive network, we derive Lyapunov functions, which can be used to study the stability of the network dynamics. Surprisingly, analysis of the Lyapunov functions show that these circuits do not always have a stable equilibrium in the case of nonlinear resistance and window functions. The Lyapunov function allows us to study circuit invariances, wherein different circuits give rise to similar equations of motion, which manifest through a gauge freedom and node permutations. Finally, we identify the relation between the graph Laplacian and the operators governing the dynamics of memristor networks operators, and we use these tools to study the correlations between distant memristive devices through the effective resistance.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Imaging of Electrothermal Filament Formation in a Mott Insulator

Resistive switching—the current- and voltage-induced change of electrical resistance—is at the core of memristive devices, which play an essential role in the emerging field of neuromorphic computing. This study is about resistive switching in a Mott insulator, which undergoes a thermally driven metal-to-insulator transition. Two distinct switching mechanisms are reported for such a system: electric-field-driven resistive switching and electrothermal resistive switching. The latter results from an instability caused by Joule heating. Here, we present the visualization of the reversible resistive switching in a planar V 2 O 3 thin-film device using high-resolution wide-field microscopy in combination with electric transport measurements. We investigate the interaction of the electrothermal instability with the strain-induced spontaneous phase separation in the V 2 O 3 thin film at the Mott transition. The photomicrographs show the formation of a narrow metallic filament with a minimum width ≲500 nm. Although the filament formation and the overall shape of the current-voltage characteristics (IVCs) are typical of an electrothermal breakdown, we also observe atypical effects such as oblique filaments, filament splitting, and hysteretic IVCs with sawtoothlike jumps at high currents in the low-resistance regime. We are able to reproduce the experimental results in a numerical model based on a two-dimensional resistor network. This model demonstrates that resistive switching in this case is indeed electrothermal and that the intrinsic heterogeneity is responsible for the atypical effects. This heterogeneity is strongly influenced by strain, thereby establishing a link between switching dynamics and structural properties.

42 ENGINEERING↗
DOE OSTI2022

Exponential Escape Rate of Filamentary Incubation in Mott Spiking Neurons

Mott materials such as vanadium oxides, when subject to a strong applied voltage, present an inhomogeneous insulator-to-metal transition with formation of metallic filaments within the insulating bulk. This property is enabling the development of compact and power-efficient neuromorphic devices known as Mott neurons. However, the nature of the transition has not been fully understood yet, as it may be attributed to different effects, including Joule self-heating and hot-carrier injection. Moreover, the experimental determination of the threshold voltage needed to induce the transition has proven to be challenging, as the transition becomes increasingly unpredictable when the threshold is approached. The physical understanding of these issues would not only deepen our understanding of Mott insulators, but would also be an important step toward the realization of neuromorphic devices based on such materials. In this work we use numerical simulations based on the Mott resistor network model to study the nature of the filament incubation and formation process. Here, we show that both electronic and thermal effects, in the form of current density focusing and Joule self-heating, respectively, contribute to the filamentary incubation and growth. Remarkably, we find that the percolation of the metallic filaments near the threshold is intrinsically stochastic, qualitatively similar to the familiar Arrhenius activated behavior and to the stochastic firing of biological neurons. More precisely, we characterize the filament percolation as a Poisson point process, which has the same probability distribution as mathematical models of neuronal firing with an exponential escape rate. Finally, we support the numerical simulation results by performing experiments in VO 2 that are in agreement with the exponential escape rate behavior. Thus, we establish a functionality of Mott insulators that opens a path toward implementing neuromorphic hardware with quantum materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Demonstration of Decentralized Physics-Driven Learning

In typical artificial neural networks, neurons adjust according to global calculations of a central processor, but in the brain, neurons and synapses self-adjust based on local information. Contrastive learning algorithms have recently been proposed to train physical systems, such as fluidic, mechanical, or electrical networks, to perform machine-learning tasks from local evolution rules. However, to date, such systems have only been implemented in silico due to the engineering challenge of creating elements that autonomously evolve based on their own response to two sets of global boundary conditions. Here, we introduce and implement a physics-driven contrastive learning scheme for a network of variable resistors, using circuitry to locally compare the response of two identical networks subjected to the two different sets of boundary conditions. Using this method, our system effectively trains itself, optimizing its resistance values without the use of a central processor or external information storage. Once the system is trained for a specified allostery, regression, or classification task, the task is subsequently performed rapidly and automatically by the physical imperative to minimize power dissipation in response to the given voltage inputs. Here, we demonstrate that, unlike typical computers, such learning systems are robust to extreme damage (and thus manufacturing defects) due to their decentralized learning. Our twin-network approach is therefore readily scalable to extremely large or nonlinear networks, where its distributed nature will be an enormous advantage; a laboratory network of only 500 edges will already outpace its in silico counterpart.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Topological Hall-like behavior of multidomain ferromagnets

Here, we investigate the emergence of topological Hall-like signals in disordered multidomain ferromagnets. Nonmonotonic behavior in Hall resistivity, commonly attributed to topological spin textures such as skyrmions, is produced in a random resistor network model without any chirality. It arises from simple mechanisms of the anomalous Hall effect in combination with the domain wall scattering. By varying domain configurations and domain wall resistances, we explore the conditions under which the nonmonotonic resistivity can be enhanced. Our results emphasize the need for careful analysis in distinguishing between true topological Hall effects and artifacts caused by domain disorders.

anomalous Hall effect↗
DOE OSTI2023

Continuous Mott Transition in Moiré Semiconductors: Role of Long-Wavelength Inhomogeneities

Recent experiments in moiré transition metal dichalcogenide materials have reported the observation of a continuous bandwidth-tuned transition from a metal to a paramagnetic Mott insulator at a fixed filling of one electron per moiré unit cell. The electrical transport measurements reveal a number of puzzling features that are seemingly at odds with the theoretical expectations of an interaction-induced, but disorder-free, bandwidth-tuned metal-insulator transition. In this Letter, we include the effects of long-wavelength inhomogeneities, building on the results for a continuous metal-insulator transition at fixed filling in the clean limit. We examine the effects of mesoscale inhomogeneities near the critical point on transport using the framework of random resistor networks, highlighting the salient differences from a simple percolation-based picture. Finally, we place our results in the context of recent and ongoing experiments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Spatiotemporal dynamics of ionic reorganization near biological membrane interfaces

Electrical signals in excitable cells involve spatially localized ionic fluxes through ion channels and pumps on cellular lipid membranes. Common approaches to understand how these fluxes spread assume that the membrane and the surrounding electrolyte comprise an equivalent circuit of capacitors and resistors, which ignores the localized nature of transmembrane ion transport, the resulting ionic gradients and electric fields, and their spatiotemporal relaxation. Here, we consider a model of localized ion pumping across a lipid membrane, and use theory and simulation to investigate how the electrochemical signal propagates spatiotemporally in and out of plane along the membrane. The localized pumping generates long-ranged electric fields with three distinct scaling regimes along the membrane: a constant potential near-field region, an intermediate monopolar region, and a far-field dipolar region. Upon sustained pumping, the monopolar region expands radially in plane with a steady speed that is enhanced by the dielectric mismatch and the finite thickness of the lipid membrane. For unmyelinated lipid membranes in physiological settings, we find remarkably fast propagation speeds of ∼ 40 m / s , allowing faster ionic reorganization compared to bare diffusion. Together, our paper shows that transmembrane ionic fluxes induce transient long-ranged electric fields in electrolyte solutions, which may play hitherto unappreciated roles in biological signaling. Published by the American Physical Society 2025

Row, Hyeongjoo (ORCID:000000033623512X)↗
DOE OSTI2026

An Open Source Perovskite Solar Cell Curve Tracer

When developing systems for perovskite solar cells (PSCs), it is important to have a testing platform that closely resembles your deployed systems. While developing a 1 U CubeSat, the Big Red Sat-1 at the University of Nebraska-Lincoln, we found a lack of passive curve tracing instrumentation, which we needed for our mission. To that end, we developed a benchtop passive curve tracer that leverages the Ossila Solar Simulator as an AM1.5 light source. This device utilizes a ladder of switched resistors and a precision voltage and current measurement to achieve the curve tracing. It also integrates a common-anode multiplexer to switch through multipixel PSCs. Finally, the solar cell holder is separate from the main measurement system, so various substrates sizes and pixel counts can be supported. This system is tested using various PSCs. It has been open sourced to enable reuse in future systems that may benefit from the lower power consumption and flight heritage.

14 SOLAR ENERGY↗
DOE OSTI2020

Micromachined Piezoresistive-sensed Diaphragms for Infrasonic Monitoring

Micromachined, piezoresistive-sensed diaphragms are designed and fabricated specifically for infrasound sensing applications. Relatively large diaphragms, up to 6 mm × 6 mm, are fabricated to meet the high sensitivity requirements of infrasonic monitoring. A double-stack SOI wafer process is used, resulting in a streamlined two-mask process without the need for doping or ion-implantation. Pressure-sensitivities of diaphragms are studied using a custom static calibration set-up. Here, the piezoresistance of longitudinal and transverse resistors are studied over a large pressure range of ±5,500 Pa so that the linear and nonlinear response regions of diaphragms are observed. Measurements are compared against a nonlinear finite element simulation—shown to accurately predict the sensor’s behavior over a large response range.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Blackstart of Power Grids with Inverter-Based Resources

This paper presents the findings of our investigation into inverter-based resource-(IBR-) driven blackstart of electric grids. Four potential black-start configurations with different setups are presented. To evaluate the technical feasibility of IBR-driven black start in the four configurations, a behavioral model of inverters that mimics current-limited inverter operation is developed using variable resistors in the MATLAB Simulink/Simscape environment. The inverter model is connected to an induction motor through transformers and a transmission line to simulate its startup. Simulation results show that even with the limited current supply capability of inverters because of their physical constraints, IBRs can black-start a motor under certain conditions. Results also show that by using soft-start techniques, such as ramped supply voltage, inrush currents can be reduced, thereby expanding the conditions under which IBRs can provide black-start support. Simulation results with different scenarios lead to discussions and key takeaways that could be valuable for further IBR-driven black-start research.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Trap-Assisted Dopant Compensation Prevents Shunting in poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Interdigitated back contact (IBC) solar cells achieve the highest efficiencies of single-junction architectures, but complicated patterning of the rear fingers and spreading of dopants during processing inhibit their mainstream adoption due to concerns of shunting between the IBC fingers. One method of simplifying patterning at the rear is by using contact masks combined with plasma-enhanced chemical vapor deposition (PECVD) or ion implantation. However, the intrinsic isolation region becomes contaminated during high-temperature annealing by lateral diffusion of dopants and during masked PECVD by spreading of dopant radicals through region between the mask and the substrate. Despite this contamination, we show through scanning spreading resistance microscopy and Kelvin probe force microscopy that a ~20 µm wide compensating region exists with high enough resistivity to prevent shunting. We model this p-i-n poly-Si system using two simulation models: a simple resistor model considering only the capture of charge carriers by trap defects in poly-Si to reduce the conductivity, and a more refined 1-dimensional finite element model using Poisson’s equation, drift-diffusion equations, and recombination of carriers. Using this model, we show that high defect density significantly decreases the current across the region between the p- and n-type fingers, preventing shunting.

atom probe↗
DOE OSTI2021

Effect of Dopant Compensation on the Conductivity of the Intrinsic poly-Si Isolation Region in Passivated IBC Silicon Solar Cells

The performance of IBC solar cells depends on the ability of this region to electrically isolate the doped fingers so that shunting does not occur and reduce the cell fill factor. We report on simulations which model the region between the p- and n-type poly-Si fingers of interdigitated back contact (IBC) solar cells as a series of resistors extending from one doped finger to the other. We demonstrate that the existence of a well compensated region between the doped fingers is enough to prevent shunting and loss of cell performance, despite contamination of dopants from the opposing dopant fingers. We show through these simulations that a net doping concentration below ~1018 cm-3 will enable a high resistivity and identify the conditions under which this highly resistive region forms despite imperfect finger edges. Additionally, we apply this analysis to tails measured by time-of-flight secondary ion mass spectrometry and confirm this hypothesis for our experimentally measured tails.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Test Results of Fast Decaying Current-Induced AC Losses in SHMS Superconducting Magnets at Jefferson Lab

The 11 GeV Super High Momentum Spectrometer (SHMS) of Hall C, part of the recent 12 GeV accelerator Upgrade at Jefferson Lab, was successfully commissioned in 2017. Fast current discharges of the SHMS Q2, Q3 quadrupoles and dipole superconducting magnets experienced some level of operational difficulty, during commissioning and normal operation. Measurements and analyses demonstrate that the fast current discharge leads to substantial AC losses in the conductor and subsequently triggers a quench-back effect. The details of the measurements and analyses have been reported previously. This paper focuses on the test results of the magnets using a reduced value of the protection dump resistor for each magnet to lower the current decay rate. Finally, the test results confirmed that the reduced dump resistances eliminated the quench-back effect for the SHMS Q2, Q3 and Dipole magnets, thus improving their cryogenic operability.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Sudden-Discharge Cycling Characteristics and Millisecond Dynamic Behaviors of a HTS Stainless-Steel Insulated Double-Pancake Coil With Thin Copper Plates

We have tested an intermediate-sized HTS stainless-steel (co-wound) insulated double pancake coil (~132 turns per coil) and discovered dynamic effects during sudden discharge on both millisecond and second scales. For soft break, the power supply is turned off suddenly but the shunt resistor (164 milliohm) is still connected; for hard break, a high voltage contactor is used to suddenly open the circuit so that the leads are completely open. Hard break is dangerous to traditionally insulated LTS magnets, but the SS-insulated HTS DPC retained integrity over ¡80 charge-discharge cycles. Voltage decay curves for soft and hard breaks are studied on short and long timescales. On long timescales, we observe the expected exponential decay and measure the time constant to calculate contact resistance. On short timescales, we observe highly dynamic effects: a hyper-exponential decay suggesting that the inductance or contact resistance is suddenly changing with time, likely an indication of the RL circuit forming. Moreover, peak voltage immediately (ms) after the sudden discharge were collected and compared. It is found that the peak voltage in soft-discharge is proportional to the applied current, while the those in hard-break has a unique pattern and tends to stay flat even though the applied current increases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗