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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Diode injection - seeded, 940 nanometer (nm), titanium - sapphire laser for H2O DIAL (differential absorption lidar), measurements

Differential absorption of laser radiation by various molecular species represents both a selective and a sensitive method of measuring specific atmospheric constituents. DIAL measurements can be carried out via two different means. Both involve using two laser pulses with slightly different wavelengths (lambda), (one lambda at a strong absorption line of the molecule of interest, the other detuned into the wing of the line), and comparing the attenuation of the pulses. One approach relies on scattering of the radiation from some conveniently located topographical target. In the other technique elastic scattering from atmospheric aerosols and particulates is used to return the radiation to the lidar receiver system. This case is referred to as the differential absorption and scattering technique, and is the technique we are interested in to measure water vapor at 940 nm. The 940 nm wavelength is extremely desirable to atmospheric scientist interested in accurate DIAL measurements of H2O in the upper and lower troposphere. Simulated measurements using approximately 940 nm and 815 nm lasers at a range of altitudes and experimental conditions are shown. By offering access to larger absorption cross-sections, injected seeded, 940 nm DIAL laser transmitters would allow for more accurate water profile measurements at altitudes from 6 to 16 km than is currently possible with 730 nm and 815 nm DIAL laser transmitters. We have demonstrated the operation of an injected seeded titanium-sapphire (TS) laser operating at approximately 940 nm with an energy of more than 90 mJ per pulse. The TS laser is pumped by a commercial, 600 mJ, 532 nm, 10 Hz Nd:YAG laser. The slope efficiency of the laser using a flat 50 percent R output coupler and a 10 m end-mirror is shown. The laser was injected seeded with a CW, AlGaAs, semiconductor diode laser which had an output of 83 mW. The CW diode seed beam was introduced into the TS laser cavity through a HR end-mirror. When the diode beam is aligned to the TS resonator, it controls the TS laser output wavelength and its spectral line width with the required resolution for DIAL applications. This work supports the need for the development of 940 nm, titanium-sapphire DIAL transmitters.

Miller, George E.↗
NASA NTRS1992

Sapphire fiber interferometer for microdisplacement measurements at high temperature

Attention is given to the use of a short-length multimode sapphire rod as an extension to a conventional Michelson interferometric configuration, but with operation of Fabry-Perot cavity-based sensor element type. The performance of such a device as an interferometric sensor is demonstrated for a case where the interference between the reflections from the sapphire-air interface and an air-metallic surface is inspected for microdisplacements of the metallic surface. A detailed account is given of the sensor's fabrication procedure; results are presented for the detection of surface-acoustic waves.

Murphy, Kent A.↗
NASA NTRS1994

Hydrogen maser clocks in space for solid-Earth research and time-transfer applications: Experiment overview and evaluation of Russian miniature sapphire loaded cavity

The Observatoire Cantonal de Neuchatel (ON) is developing for ESTEC a compact H-maser for space use based upon a miniature sapphire loaded microwave cavity, a technique pioneered at VNIIFTRI. Various contacts between West-European parties, headed by ESA, and the Russian parties, headed by ESA, led to the proposal for flying two H-masers on Meteor 3M, a Russian meteorology satellite in low polar orbit. The experiment will include two masers, one provided by ON and the other by VNIIFTRI. T/F transfer and precise positioning will be performed by both a microwave link, using PRARE equipment, and an optical link, using LASSO-like equipment. The main objectives of the experiment are precise orbit determination and point positioning for geodetic/geophysical research, ultra-accurate time comparison and dissemination as well as in-orbit demonstration of operation and performance of H-masers. Within the scope of a preliminary space H-maser development phase performed for ESTEC at ON in preparation to the joint experiment, a Russian miniature sapphire loaded microwave cavity, on loan from VNIIFTRI, was evaluated in a full-size EFOS hydrogen maser built by ON. The experimental evaluation confirmed the theoretical expectation that with a hydrogen storage volume of only 0.65 liter an atomic quality factor of 1.5 x 10(exp 9) can be obtained for a -105 dBm output power. This represents a theoretical Allan deviation of 1.7 x 10(exp -15) averaged on a 1000 s time interval. From a full-size design to a compact one, therefore, the sacrifice in performance due to the reduction of the storage volume is very small.

Busca, G.↗
NASA NTRS1996

Mode Orientation Control For Sapphire Dielectric Ring Resonator

Small sapphire tuning wedge used in technique for solving mode-purity problem associated with sapphire dielectric-ring resonator part of cryogenic microwave frequency discriminator. Breaks quasi-degeneracy of two modes and allows selective coupling to just one mode. Wedge mounted on axle entering resonator cavity and rotated while resonator cryogenically operating in vacuum. Furthermore, axle moved vertically to tune resonant frequency.

Santiago, David G.↗
NASA NTRS1995

Bend Properties of Sapphire Fibers at Elevated Temperatures: Bend Survivability - 1

The effect of temperature on the bend radius that a c-axis-oriented sapphire fiber can withstand was determined for fibers of various diameter. Bend stress rupture tests were performed for times of 1-100 h and temperatures of 300-1700 C. Fibers would survive the bend test undeformed, would fracture or would deform. The bend survival radius was determined to be the radius above which no fibers fractured or deformed for a given time-temperature treatment. It was found that the ability of fibers to withstand curvature decreases substantially with time and increasing temperature and that fibers of smaller diameter (46-83 micron) withstood smaller bend radii than would be expected from just a difference in fiber diameter when compared with the bend results of the fibers of large diameter (144 micron). This was probably due to different flaw populations, causing high temperature bend failure for the tested sapphire fibers of different diameters.

Morscher, Gregory N.↗
NASA NTRS1996

YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

Sabataitis, J. C.↗
NASA NTRS1998

Two Wavelength Ti:sapphire Laser for Ozone DIAL Measurements from Aircraft

Laser remote sensing of ozone from aircraft has proven to be a valuable technique for understanding the distribution and dynamics of ozone in the atmosphere. Presently the differential absorption lidar (DIAL) technique, using dual ND:YAG lasers that are doubled to pump dye lasers which in turn are doubled into the UV for the "on" and "off' line lasers, is used on either the NASA DC-8 or P-3 aircraft. Typically, the laser output for each line is 40-mJ and this is split into two beams, one looking up and the other downward, each beam having about 20-mJ. The residual ND:YAG (1.06 micron) and dye laser energies are also transmitted to obtain information on the atmospheric aerosols. While this system has operated well, there are several system characteristics that make the system less than ideal for aircraft operations. The system, which uses separate "on" and "off" line lasers, is quite large and massive requiring valuable aircraft volume and weight. The dye slowly degrades with time requiring replacement. The laser complexity requires a number of technical people to maintain the system performance. There is also the future interest in deploying an ozone DIAL system in an Unpiloted Atmospheric Vehicle (UAV) which would require a total payload mass of less than 150 kg and power requirement of less than 1500 W. A laser technology has emerged that could potentially provide significant enhancements over the present ozone DIAL system. The flashlamp pumped Ti:sapphire laser system is an emerging technology that could reduce the mass and volume over the present system and also provide a system with fewer conversion steps, reducing system complexity. This paper will discuss preliminary results from a flashlamp-pumped Ti:sapphire laser constructed as a radiation source for a UV DIAL system to measure ozone.

Situ, Wen↗
NASA NTRS1998

Stability and Phase Noise Tests of Two Cryo-Cooled Sapphire Oscillators

A cryocooled Compensated Sapphire Oscillator (CSO), developed for the Cassini Ka-band Radio Science experiment, and operating in the 8K - 10K temperature range was previously demonstrated to show ultra-high stability of sigma(sub y) = 2.5 x 10 (exp -15) for measuring times 200 seconds less than or equal to tau less than or equal to 600 seconds using a hydrogen maser as reference. We present here test results for a second unit which allows CSO short-term stability and phase noise to be measured for the first time. Also included are design details of a new RF receiver and an intercomparison with the first CSO unit. Cryogenic oscillators operating below about 10K offer the highest possible short term stability of any frequency sources. However, their use has so far been restricted to research environments due to the limited operating periods associated with liquid helium consumption. The cryocooled CSO is being built in support of the Cassini Ka-band Radio Science experiment and is designed to operate continuously for periods of a year or more. Performance targets are a stability of 3-4 x 10 (exp -15) (1 second less than or equal to tau less than or equal to 100 seconds) and phase noise of -73dB/Hz @ 1Hz measured at 34 GHz. Installation in 5 stations of NASA's deep space network (DSN) is planned in the years 2000 - 2002. In the previous tests, actual stability of the CSO for measuring times tau less than or equal to 200 seconds could not be directly measured, being masked by short-term fluctuations of the H-maser reference. Excellent short-term performance, however, could be inferred by the success of an application of the CSO as local oscillator (L.O.) to the JPL LITS passive atomic standard, where medium-term stability showed no degradation due to L.O. instabilities at a level of (sigma)y = 3 x 10 (exp -14)/square root of tau. A second CSO has now been constructed, and all cryogenic aspects have been verified, including a resonator turn-over temperature of 7.907 K, and Q of 7.4 x 10 (exp 8). These values compare to a turn-over of 8.821 K and Q of 1.0 x 10 (exp 9) for the first resonator. Operation of this second unit provides a capability to directly verify for the first time the short-term (1 second less than or equal to tau less than or equal to 200 seconds) stability and the phase noise of the CSO units. The RF receiver used in earlier tests was sufficient to meet Cassini requirements for tau greater than or equal to 10 seconds but had short-term stability limited to 2-4 x 10 (exp -14) at tau = 1 second, a value 10 times too high to meet our requirements. A new low-noise receiver has been designed to provide approximately equal to 10-15 performance at 1 second, and one receiver is now operational, demonstrating again short-term CSO performance with H maser-limited stability. Short-term performance was degraded in the old receiver due to insufficient tuning bandwidth in a 100MHZ quartz VCO that was frequency-locked to the cryogenic sapphire resonator. The new receivers are designed for sufficient bandwidth, loop gain and low noise to achieve the required performance.

Dick, G. John↗
NASA NTRS2002

High-Temperature Mechanical Properties of Cr(3+) Doped Sapphire Fibers

High-temperature slow-crack growth of single crystal 10 wt% Cr2O3 - Al2O3 (nominal composition) fibers has been studied by tensile rupture experiments at 1400 C, under different stressing rates (0.5 to 41.5 MPa/s). Slow-crack growth (SCG) is less pronounced with increasing Cr2O3. Rupture stresses increased with the stressing rate from 397 MPa to 515 MPa, resulting in a SCG exponent, N=19. The Cr2O3 composition was analyzed by Energy Dispersed X-Ray Spectra (EDS) and fracture surfaces were studied by scanning electron microscopy (SEM). Results are compared with previous studies on 100-300 ppm Cr3(+) doped sapphire fibers and on commercial sapphire fibers.

Sayir, A.↗
NASA NTRS2004

Ion Milling of Sapphire

The ion milling of sapphire is a complicated operation due to several characteristics of the material itself. It is a relatively hard transparent nonconductive crystalline material that does not transfer heat nearly as well as metals that have been successfully ion milled in the past. This investigation involved designing an experimental arrangement, using existing ion milling equipment, as the precursor to figuring the surface of sapphire and other insulating optical materials. The experimental arrangement employs a laser probe beam to constantly monitor the stresses being induced in the material, as it is being ion milled. The goal is to determine if the technique proposed would indeed indicate the stress being induced in the material so that these stresses can be managed to prevent failure of the optic.

Gregory, Don A.↗
NASA NTRS2004

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗
NASA NTRS2012

Sapphire Viewports for a Venus Probe

A document discusses the creation of a viewport suitable for use on the surface of Venus. These viewports are rated for 500 C and 100 atm pressure with appropriate safety factors and reliability required for incorporation into a Venus Lander. Sapphire windows should easily withstand the chemical, pressure, and temperatures of the Venus surface. Novel fixture designs and seals appropriate to the environment are incorporated, as are materials compatible with exploration vessels. A test cell was fabricated, tested, and leak rate measured. The window features polish specification of the sides and corners, soft metal padding of the sapphire, and a metal C-ring seal. The system safety factor is greater than 2, and standard mechanical design theory was used to size the window, flange, and attachment bolts using available material property data. Maintenance involves simple cleaning of the window aperture surfaces. The only weakness of the system is its moderate rather than low leak rate for vacuum applications.

Bates, Stephen↗
NASA NTRS2010

High Q Miniature Sapphire Acoustic Resonator

We have demonstrated high Q measurements in a room temperature Miniature Sapphire Acoustic Resonator (MSAR). Initial measurements of bulk acoustic modes in room temperature sapphire at 39 MHz have demonstrated a Q of 8.8 x 10(exp 6). The long term goal of this work is to integrate such a high Q resonator with small, low noise quartz oscillator electronics, providing a fractional frequency stability better than 1 x 10(exp -14) @ 1s.

oscillator↗
NASA NTRS1995

Improved Performance of a Temperature Compensated LN2 Cooled Sapphire Oscillator

We report on improved stability in a whispering gallery sapphire resonator for which the dominant WGHn11 microwave mode family shows frequency-stable, compensated operation for temperatures above 77K. Several modifications during the past year have led to significant improvements in performance. Current tests with improved thermal stability provide Allan Deviation of frequency of 2.6 - 4 ? 10-13 for measurement times of 1#t#100 seconds. We project a frequency stability of 1014 for this resonator with stabilized housing temperature and with a mode Q of 107.!.

Temperature Compensated LN2 Cooled Sapphire Oscill↗
NASA NTRS2000

A mechanically compensated sapphire oscillator optimized for operation at 40 Kelvin

We present features for a second-generation thermomechanically compensated sapphire resonator. The new design shares the short thermal time constants characteristic of previously developed 10K and 77K CSO resonators. This, together with a thermal ballast methodology, allows effective compensation of temperature fluctuations over a wide range of time scales.

sapphire oscillator↗