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At least 73 records · Page 4

Status of local oscillators for operating ultra-high resolution frequency discriminators as frequency standards

The operation of new improved frequency standards based on new ultra-high-resolution frequency discriminators requires high stability local, or 'flywheel' oscillators. We review the spectral density of phase fluctuations of existing flywheel oscillators and the related time domain frequency stability of new and proposed cryogenically cooled oscillators suitable for this application. Presently used devices include the quartz crystal oscillator, the room-temperature actively oscillating atomic hydrogen (H) maser, and the superconducting maser oscillator. Future devices include the cryogenic H-maser and other cryogenic devices using resonators of superconducting metal or solid crystalline sapphire. The relation of the phase spectral density of these devices to the characteristics of present and proposed frequency discriminators based on trapped cooled ions and cold atoms is discussed in terms of their operation as frequency standards.

Vessot, R. F. C.↗

Frequency Stability of 1X10(sup -13) in a compensated Saphirre Oscillator Operating Above 77K

We report on tests of a compensated saphirre oscillator (CS) which shows frequency-stable operation at temperatures above 77k.The frequency stability for this oscillator shows an apparent flicker floor of 7.5X10(sup -14) for measuring times between 3 and 10 seconds, and stability is better than 2X10(sup -13) for all measuring times between 10 and 100 seconds... Frequency sensitivities os the microwave sapphire resonator to temperature and temperature rate have been characterized, and a careful analysis of several aspects of the ac frequency-lock.

compensated saphirre oscillator frequency stabilit↗

Compact Dielectric-Rod White-Light Delay Lines

Optical delay lines of a proposed type would be made from rods of such dielectric materials as calcium fluoride, fused silica, or sapphire. These would offer advantages over prior optical delay lines, as summarized below. Optical delay lines are key components of opto-electronic microwave oscillators, narrow-band opto-electronic microwave filters, evanescent-field optical biochemical detectors, and some Fourier-Transform spectrum analyzers. Heretofore, optical delay lines used in such applications have been of two types: resonators and coiled long optical fibers, both of which have disadvantages: Resonators are compact, but excitation must be provided by narrow-band lasers. Wide-band (including noisy) laser light cannot be coupled efficiently to narrow-band resonators. When light is coupled into a narrowband resonator from a source of reasonably high power, a significant amount of optical energy circulates within the resonator, causing nonlinear loss and significant noise. Typically, a coil-type optical delay line is made of fused-silica fiber, which exhibits fundamental loss. To overcome the limit imposed by the optical loss in fused silica, it would be necessary to use fibers having crystalline cores. Although space is saved by winding fibers into coils, fiber-coil delay lines are still inconveniently bulky. The proposed compact dielectric-rod delay lines would exploit the special class of non-diffracting light beams that are denoted Bessel beams because their amplitudes are proportional to Bessel functions of the radii from their central axes. High-order Bessel beams can have large values of angular momentum. They can be generated with the help of whispering-gallery-mode optical resonators, as described, for example, in "Simplified Generation of High-Angular-Momentum Light Beams" (NPO-42965) NASA Tech Briefs, Vol. 31, No. 3 (March 2007), page 8a. In a delay line according to the proposal, the dielectric rod would be dimensioned to function as a multimode waveguide. Suitably chosen high-angular-momentum modes in such a waveguide exhibit low group velocity (hence, long delay) and no resonance. Such a delay line could perform well at any wavelength or range of wavelengths within the transparency wavelength band of the dielectric material, and the maximum possible group delay achievable through suitable design would be limited only by the optical loss in the rod material.

Maleki, Lute↗

Demonstration of nearly pinhole-free epitaxial aluminum thin films by sputter beam epitaxy

Superconducting resonators with high quality factors have been fabricated from aluminum films, suggesting potential applications in quantum computing. Improvement of thin film crystal quality and removal of void and pinhole defects will improve quality factor and functional yield. Epitaxial aluminum films with superb crystallinity, high surface smoothness, and interface sharpness were successfully grown on the c-plane of sapphire using sputter beam epitaxy. This study assesses the effects of varying substrate preparation conditions and growth and prebake temperatures on crystallinity and smoothness. X-ray diffraction and reflectivity measurements yield extensive Laue oscillations and Kiessig thickness fringes for films grown at 200 °C under 15 mTorr Ar, indicating excellent crystallinity and surface smoothness; moreover, an additional substrate preparation procedure which involves (1) a modified substrate cleaning procedure and (2) prebake at 700 °C in 20 mTorr O 2 is shown by atomic force microscopy to yield nearly pinhole-free film growth while maintaining epitaxy and high crystal quality. The modified cleaning procedure is environmentally friendly and eliminates the acid etch steps common to conventional sapphire preparation, suggesting potential industrial application both on standard epitaxial and patterned surface sapphire substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Titanium-doped sapphire laser research and design study

Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.

Moulton, Peter F.↗

Solar Pumped Solid State Lasers for Space Solar Power: Experimental Path

We outline an experimentally based strategy designed to lead to solar pumped solid state laser oscillators useful for space solar power. Our method involves solar pumping a novel solid state gain element specifically designed to provide efficient conversion of sunlight in space to coherent laser light. Kilowatt and higher average power is sought from each gain element. Multiple such modular gain elements can be used to accumulate total average power of interest for power beaming in space, e.g., 100 kilowatts and more. Where desirable the high average power can also be produced as a train of pulses having high peak power (e.g., greater than 10(exp 10 watts). The modular nature of the basic gain element supports an experimental strategy in which the core technology can be validated by experiments on a single gain element. We propose to do this experimental validation both in terrestrial locations and also on a smaller scale in space. We describe a terrestrial experiment that includes diagnostics and the option of locating the laser beam path in vacuum environment. We describe a space based experiment designed to be compatible with the Japanese Experimental Module (JEM) on the International Space Station (ISS). We anticipate the gain elements will be based on low temperature (approx. 100 degrees Kelvin) operation of high thermal conductivity (k approx. 100 W/cm-K) diamond and sapphire (k approx. 4 W/cm-K). The basic gain element will be formed by sequences of thin alternating layers of diamond and Ti:sapphire with special attention given to the material interfaces. We anticipate this strategy will lead to a particularly simple, robust, and easily maintained low mass modelocked multi-element laser oscillator useful for space solar power.

Fork, Richard L.↗

Integrity Monitoring of Mercury Discharge Lamps

Mercury discharge lamps are critical in many trapped ion frequency standard applications. An integrity monitoring system can be implemented using end-of-life signatures observed in operational mercury discharge lamps, making it possible to forecast imminent failure and to take action to mitigate the consequences (such as switching to a redundant system). Mercury lamps are used as a source of 194-nm ultraviolet radiation for optical pumping and state selection of mercury trapped ion frequency standards. Lamps are typically fabricated using 202Hg distilled into high-purity quartz, or other 194-nm transmitting material (e.g., sapphire). A buffer gas is also placed into the bulb, typically a noble gas such as argon, neon, or krypton. The bulbs are driven by strong RF fields oscillating at .200 MHz. The lamp output may age over time by two internal mechanisms: (1) the darkening of the bulb that attenuates light transmission and (2) the loss of mercury due to migration or chemical interactions with the bulb surface. During fabrication, excess mercury is placed into a bulb, so that the loss rate is compensated with new mercury emanating from a cool tip or adjacent reservoir. The light output is nearly constant or varies slightly at a constant rate for many months/years until the mercury source is depleted. At this point, the vapor pressure abruptly falls and the total light output and atomic clock SNR (signal-to-noise ratio) decrease. After several days to weeks, the light levels decrease to a point where the atomic clock SNR is no longer sufficient to stay in lock, or the lamp self-extinguishes. This signature has been observed in four separate end-of-life lamp failures while operating in the Deep Space Network (DSN). A simple integrator circuit can observe and document steady-state lamp behavior. When the light levels drop over a predetermined time interval by a specified amount (e.g., 20 percent), an alarm is set. For critical operational applications, such as the DSN or in space flight, this warning provides notice that a failure may be imminent, and for operators or control algorithm to take action.

Tjoelker, Robert L.↗

Performance Of Superconducting-Cavity Maser

Report describes experiments on operation of superconducting-cavity maser - all-cryogenic oscillator. Operates with degree of stability, at short measuring times, superior to that achievable by any other means. All components designed for cryogenic operation and stabilizing cavity very rigid, consisting of sapphire filling coated with lead.

Dick, G. John↗

Optical contact approach to laser rod support.

The successful application of an optical contact is described between a ruby laser rod that has no mechanical support and a sapphire rod. The contact is found to be durable in the environmental conditions associated with a high-power pulsed ruby laser. The described contact technique makes it possible to construct a laser oscillator using an ellipsoidal pump mirror that does not employ dielectric coatings in the cavity. Another advantage consists in that the ruby laser is not shaded from the pump light by mounting jigs at its ends.

Gurski, T. R.↗

High Q Miniature Sapphire Acoustic Resonator

We have demonstrated high Q measurements in a room temperature Miniature Sapphire Acoustic Resonator (MSAR). Initial measurements of bulk acoustic modes in room temperature sapphire at 39 MHz have demonstrated a Q of 8.8 x 10(exp 6). The long term goal of this work is to integrate such a high Q resonator with small, low noise quartz oscillator electronics, providing a fractional frequency stability better than 1 x 10(exp -14) @ 1s.

oscillator↗

Dielectric breakdown induced by picosecond laser pulses

The damage thresholds of transparent optical materials were investigated. Single picosecond pulses at 1.06 microns, 0.53 microns and 0.35 microns were obtained from a mode locked Nd-YAG oscillator-amplifier-frequency multiplier system. The pulses were Gaussian in space and time and permitted the determination of breakdown thresholds with a reproducibility of 15%. It was shown that the breakdown thresholds are characteristic of the bulk material, which included nine alkali halides, five different laser host materials, KDP, quartz, sapphire and calcium fluoride. The extension of the damage data to the ultraviolet is significant, because some indication was obtained that two- and three-photon absorption processes begin to play a role in determining the threshold. Throughout the visible region of the spectrum the threshold is still an increasing function of frequency, indicating that avalanche ionization is the dominant factor in determining the breakdown threshold. This was confirmed by a detailed study of the damage morphology with a high resolution microscope just above the threshold. The influence of self focusing is discussed, and evidence for beam distortion below the power threshold for complete self focusing is presented, confirming the theory of Marburger.

Smith, W. L.↗

Microwave Resonators Containing Diamond Disks

Synthetic diamond dielectric bodies proposed for use in cylindrical resonators helping to stabilize frequencies of some microwave oscillators. Acting in conjunction with metal resonator cavities in which mounted, such dielectric bodies support "whispering-gallery" waveguide modes characterized by desired frequencies of resonance and by electro-magnetic-field configurations limiting dissipation of power on metal surfaces outside dielectric bodies. Performances at room temperature might exceed those of liquid-nitrogen-cooled sapphire-based resonators.

Dick, G. John↗

Current Status of Thin Film (Ba,Sr) TiO3 Tunable Microwave Components for RF Communications

The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable microwave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg. at 18 GHz and a figure of merit of 74.3 deg./dB). Issues of postannealing, Mn-doping and Ba(x)Sr(1-x)TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.

VanKeuls, F. W.↗

Current Status of Thin Film (Ba,Sr)TiO3 Tunable Microwave Components for RF Communications

The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable micro-wave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg at 18 GHz and a figure of merit of 74.3 deg/dB). Issues of post-annealing, Mn-doping and Ba(x)Sr(1-x) TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.

VanKeuls, F. W.↗

High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire Substrates

For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 square centimeters N-sec at an electron carrier density (n(sub e) = 1.33x10(exp 12) per square centimeter)) of 1.6 x 10(exp 12) per square centimeter was obtained. At 250 mK, the mobility increases to 13,313 square centimeters/V-sec (n(sub e)=1.33x10(exp 12) per square centimeter)) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.

Mueller, Carl H.↗

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗

Toward the origins of binding energy shifts and “satellites” formation during plasma-XPS measurements

In-plasma x-ray photoelectron spectroscopy (plasma-XPS) emerges as a powerful platform for real-time, in situ chemical analysis under conditions relevant to semiconductor processing and other plasma-enabled technologies. This study investigates the origins of binding energy (BE) shifts and the formation of “satellite” peaks observed during plasma-XPS measurements across conductive, dielectric, and gas-phase systems. Using a standard laboratory-based ambient pressure XPS apparatus coupled with an alternating current (AC)-driven capacitively coupled plasma source, we demonstrate that metastable surface species, such as transient Au oxides, can be detected during plasma exposure, revealing chemical states that are hardly accessible using conventional ultrahigh vacuum (UHV) XPS. In dielectric samples (e.g., undoped diamond, sapphire), we observe pressure- and plasma-type-dependent BE shifts of more than 50 eV, attributed to x-ray-induced and plasma-mediated surface charging. These shifts are mitigated at higher pressures/plasmas or in electronegative plasmas (e.g., O 2 ), the latter due to enhanced charge compensation mechanisms involving slow negative ions. For gas-phase species, AC-plasma excitation leads to spectral broadening and the emergence of “satellite” peaks with energy separations of a few electron volts, linked to oscillating local plasma potentials in the probing volume. Furthermore, these findings highlight the complex and important interplay between plasma parameters, surface charging, and local electric fields in shaping XPS spectra. Overall, plasma-XPS emerges as a critical metrological tool for probing transient surface chemistry, with implications for semiconductor processing, material synthesis, and plasma diagnostics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates

SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.

Alterovitz, Samuel A.↗