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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Discussion of studies relating to the selection of doping materials of high neutron absorption usable for enhancing the neutron radiographic imaging of explosive mixtures, without interfering with the proper chemical reaction of the explosives. The results of the studies show that gadolinium oxide is an excellent material for doping explosive mixtures to enhance the neutron radiographic image.
Gallium Nitride (GaN) has a great potential in high-power and high-frequency applications due to its wide energy gap and good transport property. So far all commercial GaN optoelectronic and electronic devices have planar junctions and heterostructures prepared by epitaxial growth. To take the advantage of the merits of GaN material properties, more sophisticated device configurations such as current-aperture vertical electron transistors (CAVETs), junction field-effect transistors (JFETs), and super-junction (SJ) devices require the ability to form in-plane, lateral junctions by selective area doping (SAD). In this project, we explored a novel approach of realizing SAD through selective-area etching (SAE) followed by selective-area growth (SAG).
Defect engineering through elemental doping is an efficient way to boost the performance of semiconductor photocatalysts. For this work, transition-metal (TM) doped titanate nanowires (TNWs) were prepared via ion-exchange over the titanate precursors and demonstrated for the Rhodamine B (RhB) degradation under ultraviolet (UV) light irradiation. The ion-exchange of selective ions (V 5+ , Cr 3+ , Ni 2+ , and Zn 2+ ) with protons from pristine TNWs resulted in the hierarchical meso-porosity of nanowires with large pores of ~5–20 nm by TM doping and small pores of ~3.6–4.5 nm inherited from pristine TNWs, which facilitates the mass transfer while maintaining high surface area and active sites. Meanwhile, the TM intercalation partially reduces the Ti 4+ to Ti 3+ and narrows the optical bandgap, which, together with oxygen vacancies and superoxide radicals from pristine TNWs, enhance the adsorption and photocatalytic degradation performance of RhB. This work helps to elucidate the effects of transition-metal doping and provides a rational strategy towards high performance titanate-based photocatalysts for efficient and sustainable wastewater treatment.
Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.
Manipulating the selectivity-determining step in post-C–C coupling is crucial for enhancing C 2 product specificity during electrocatalytic CO 2 reduction, complementing efforts to boost rate-determining step kinetics. Here we highlight the role of single-site noble metal dopants on Cu surfaces in influencing C–O bond dissociation in an oxygen-bound selectivity-determining intermediate, steering post-C–C coupling toward ethylene versus ethanol. Integrating theoretical and experimental analyses, we demonstrate that the oxygen binding strength of the Cu surface controls the favorability of C–O bond scission, thus tuning the selectivity ratio of ethylene-to-ethanol. The Rh-doped Cu catalyst with optimal oxygen binding energy achieves a Faradaic efficiency toward ethylene of 61.2% and an ethylene-to-ethanol Faradaic efficiency ratio of 4.51 at –0.66 V versus RHE (reversible hydrogen electrode). Integrating control of both rate-determining and selectivity-determining steps further raises ethylene Faradaic efficiency to 68.8% at 1.47 A cm -2 in a tandem electrode. Our insights guide the rational design of Cu-based catalysts for selective CO 2 electroreduction to a single C 2 product.
Previous studies have shown that selective laser flash sintering (SLFS) can be initiated in dielectrics that exhibit ionic or electronic conduction at high temperature. These materials required high laser powers to reach the temperatures where electrical conduction is sufficient to initiate SLFS. In this study, SLFS in lanthanum chromite (LC), an intrinsic electronic conductor with high conductivity, and lanthanum strontium chromite (LSC), which is doped to further increase electronic conductivity, were investigated with a focus on understanding the initiation mechanisms. Results show that the initiation of SLFS in LC and LSC occurs when electronic charge carriers are activated and flow to the electrode where the current is measured. A combination of carriers produced at the electrode, temperature-activated intrinsic charge carriers, and extrinsic charge carriers present in LSC due to doping are responsible for the facile initiation of SLFS.
Various methods for the formation of ohmic contacts to boron-doped δ layers in CVD-diamond epitaxial structures are investigated. In the first variant, an additional thin heavily doped layer was formed on the diamond surface to which an ohmic contact is formed. Then, the surface p{sup +} layer between the contact pads is etched out; therefore, the current in the structure flows only through a buried δ layer. In the second approach, the doped diamond selectively grows in the contact windows under a metallic mask after preliminary etching of the undoped diamond layer (cap) up to the δ layer. In this case, the heavily doped p{sup +} layer forms an end contact to the δ layer. These two variants differ in terms of the conditions of applicability, the complexity of the manufacturing technology, the value of the contact resistance, and can be used to solve problems in which it is necessary to have a different quality of the contacts, such as the formation of transistor structures or test cells for measuring physical characteristics.
As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study presents a spectral emittance model for films and cylinders of rare earth doped yttrium aluminum garnets. Good agreement between experimental and theoretical film spectral emittances was found for erbium and holmium aluminum garnets. Spectral emittances of films are sensitive to temperature differences across the film. For operating conditions of interest, the film emitter experiences a linear temperature variation whereas the cylinder emitter has a more advantageous uniform temperature. Emitter efficiency is also a sensitive function of temperature. For holminum aluminum garnet film the efficiency is 0.35 at 1446K but only 0.27 at 1270 K.
Photoelectrochemical oxidation of water presents a pathway for sustainable production of hydrogen peroxide (H 2 O 2 ). Here two-electron water oxidation toward H 2 O 2 , however, competes with the popular four-electron process to form oxygen and one-electron water oxidation to form OH radical. To date, bismuth vanadate (BiVO 4 ) has been shown to exhibit promising selectivity toward H 2 O 2 , especially under illumination, but it suffers from high overpotential and notoriously poor stability. Herein, using density functional theory calculations, we predict that doping BiVO 4 with optimal concentrations of gadolinium (Gd) not only enhances its activity for H 2 O 2 production but also improves its stability. Experimentally, we demonstrate that intermediate amounts of Gd doping (6–12%) reduce the onset potential of BiVO 4 for H 2 O 2 production by ~110 mV while achieving a Faradaic efficiency of ~99.5% under illumination and prolonging the catalytic lifetime by more than a factor of 20 at 2.0 V vs RHE under illumination.
Compositions and methods of making are provided for coated electrodes and batteries comprising the same. The compositions may comprise a base composition having an active material selected from the group consisting of LiCoO.sub.2, LiMn.sub.2O.sub.4, Li.sub.2MnO.sub.3, LiNiO.sub.2, LiMn.sub.1.5Ni.sub.0.5O.sub.4, LiFePO.sub.4, Li.sub.2FePO.sub.4F, Li.sub.3CoNiMnO.sub.6, Li(Li.sub.aNi.sub.xMn.sub.yCo.sub.z)O.sub.2, and mixtures thereof. The compositions may also comprise a coating composition that covers at least a portion of the base composition, wherein the coating composition comprises a non-metal or metalloid element. The methods of making comprise providing the base composition and a doped carbon coating composition, and mixing the coating composition with the base electrode composition at an elevated temperature in a flowing inert gas atmosphere. The coating composition may be a nitrogen-doped carbon composition a nitrogen doping element selected from the group consisting of: pyridine, 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide, 1-ethyl-3-methylimidazolium dicyanamide, and mixtures thereof.
The ability to form pristine interfaces after etching and regrowth of GaN is a prerequisite for epitaxial selective area doping, which in turn is needed for the formation of lateral PN junctions and advanced device architectures. In this work, we report the electrical properties of etched-and-regrown GaN PN diodes using an in situ Cl-based precursor, tertiary butylchloride (TBCl). We demonstrated a regrowth diode with I–V characteristics approaching that from a continuously grown reference diode. The sources of unintentional contamination from the silicon (Si) impurity and the mediating effect of Si during the TBCl etching are also investigated in this study. Furthermore, this work points to the potential of in situ TBCl etching toward the realization of GaN lateral PN junctions.
Alumina is a structural ceramic that finds many uses in a broad range of applications. It is widely employed in the aerospace and biomedical sectors due to its stability at high temperatures and in harsh chemical environments. Here, we show that magnetism can be induced at alumina surfaces by doping with 3d transition metals. We analyze the electronic structure, spin magnetic moments, and spin density of α-Al 2 O 3 as a function of both dopant species (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu) and depth using first principles calculations. Our results show that all dopants, with the exception of Sc, produce magnetic moments that are concentrated to the surface of alumina with varying degrees of delocalization. It is seen that all of the dopants are at least meta-stable on the surface and must overcome an energy barrier of 0.19–1.14 eV in order to diffuse from the surface into the bulk. As a result of judiciously doping with select 3$\textit{d}$ transition metals the surface of alumina can be made magnetic. This could lead to novel applications in data storage, catalysis, and biomedical engineering through an added surface functionality.
In this work, steady-state photocapacitance (SSPC) was conducted on nonpolar m-plane GaN n-type Schottky diodes to evaluate the defects induced by inductively coupled plasma (ICP) dry etching in etched-and-regrown unipolar structures. An ~10× increase in the near-midgap Ec – 1.9 eV level compared to an as-grown material was observed. Defect levels associated with regrowth without an etch were also investigated. The defects in the regrown structure (without an etch) are highly spatially localized to the regrowth interface. Subsequently, by depth profiling an etched-and-regrown sample, we show that the intensities of the defect-related SSPC features associated with dry etching depend strongly on the depth away from the regrowth interface, which is also reported previously. A photoelectrochemical etching (PEC) method and a wet AZ400K treatment are also introduced to reduce the etch-induced deep levels. A significant reduction in the density of deep levels is observed in the sample that was treated with PEC etching after dry etching and prior to regrowth. An ~2× reduction in the density of Ec – 1.9 eV level compared to a reference etched-and-regrown structure was observed upon the application of PEC etching treatment prior to the regrowth. The PEC etching method is promising for reducing defects in selective-area doping for vertical power switching structures with complex geometries.
The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. Furthermore, this paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.
Optimizing thermal anneals of Si-implanted β-Ga 2 O 3 is critical for low resistance contacts and selective area doping. Here we report the impact of annealing ambient, temperature, and time on the activation of room temperature ion-implanted Si in β-Ga 2 O 3 at concentrations from 5 × 10 18 to 1 × 10 20 cm −3 , demonstrating full activation (>80% activation, mobilities >70 cm 2 /V s) with contact resistances below 0.29 Ω mm. Homoepitaxial β-Ga 2 O 3 films, grown by plasma-assisted molecular beam epitaxy on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5 × 10 18 , 5 × 10 19, and 1 × 10 20 cm −3 . Anneals were performed in an ultra-high vacuum-compatible quartz furnace at 1 bar with well-controlled gas compositions. To maintain β-Ga 2 O 3 stability, p O2 must be greater than 10 −9 bar. Anneals up to p O2 = 1 bar achieve full activation at 5 × 10 18 cm −3, while 5 × 10 19 cm −3 must be annealed with p O2 ≤ 10 −4 bar, and 1 × 10 20 cm −3 requires p O2 < 10 −6 bar. Water vapor prevents activation and must be maintained below 10 −8 bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperatures up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 min with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5 × 10 19 cm −3 and occurs rapidly at 1 × 10 20 cm −3 . Rutherford backscattering spectrometry (channeling) suggests that damage recovery is seeded from remnant aligned β-Ga 2 O 3 that remains after implantation; this conclusion is also supported by scanning transmission electron microscopy showing retention of the β-phase with inclusions that resemble the γ-phase.
The electron cyclotron resonance spectra in classical and quantizing magnetic fields in asymmetric heterostructures with HgCdTe/CdHgTe quantum wells with selective barrier doping are investigated. Self-consistent calculations of the energy spectra at B = 0 and Landau levels in the framework of the 8-band Kane model using the Hartree approximation are made. The strong (~10%) splitting of the cyclotron resonance line observed in weak fields is attributed to the Rashba effect in samples with inverted and normal band structures. The evolution of absorption lines upon a variation in the magnetic field is investigated up to 34 T, when the magnetic quantization already dominates over Rashba splitting.
The effects of salt-doping on the morphological behavior of block copolymers are well established but remain poorly understood, partially because of the challenge of resolving electrostatics in a heterogeneous medium with low average permittivity. By employing a recently developed field theory, we analyze the phase behavior of polystyrene-b-poly(ethylene oxide) (SEO) copolymers doped with lithium bis(trifluoromethanesulfonyl)imide salts (LiTFSI). Using a single fitting parameter, the ionic solvation radius, we obtain qualitative agreement between our theory and experimental data over a range of polymer molecular weights and copolymer compositions. Such agreement supports and highlights the need of solvation free energy to accurately describe the self-assembly of ion-doped block copolymers and demonstrates that experimentally observed dependence on molecular weight, not present in neutral block copolymers, can be rationalized by solvation effects. Overall, morphological variations are stronger than those predicted by the leading, linear order theory but can be captured by the full model.