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At least 73 records · Page 4

System and method for compact adaptive free space optical communications

The present disclosure relates to a free-space optical communications system that may make use of a controller and a digital micro mirror (DMM) assembly in communication with the controller. The DMM may have a plurality of independently controllable micromirror elements forming both an emitter and a receiver. A laser is included which is configured to generate an optical beam which may be applied to select ones of the first subpluralities of micromirror elements to generate a transmitted free space optical signal along a selected vector. A detector is included for receiving an incoming free space optical signal imaged by at least one of the micromirror elements.

42 ENGINEERING↗

Resonance plasmonic coupling: selective enhancement of band edge emission over trap state emission of CdSe quantum dots

The photoluminescence properties of quantum dots (QDs) are often enhanced by eliminating surface trap states through chemical methods. Alternatively, a physical approach is presented here for improving photoluminescence purity in QDs by employing frequency-specific plasmon resonance coupling. Emitter-bound plasmonic hybrids are designed by electrostatically binding negatively charged QDs in water to positively charged gold nanoparticles having a thin polymer coating. Herein, two types of QDs are used: (i) bare CdSe, which exhibits both band edge and trap state emission, and (ii) CdSe overcoated with a ZnS shell (CdSe/ZnS) devoid of trap state emission. Tuning the extinction spectrum of the plasmonic system to match the band edge emission of CdSe enables the selective enhancement of band edge emission over trap state emission. Excellent match in the extinction spectrum of the gold nanoparticle with both, experimentally calculated photoluminescence enhancement factor and theoretically calculated radiative rate enhancement signifies the role of frequency-specific plasmon resonance coupling. Plasmon-coupled photoluminescence of CdSe/ZnS is further investigated by varying the number density of emitter on the surface of plasmonic nanoparticle. An enhancement in the photoluminescence is observed at a lower emitter density of CdSe/ZnS and the photoluminescence enhancement factor closely follows the plasmon resonance. However, photoluminescence quenching occurs with an increase in CdSe/ZnS due to plasmon-assisted nonradiative energy transfer between nearby QDs, as indicated by a red shift in the PL maximum. These studies establish that resonance plasmonic coupling is a convenient physical strategy for tuning the intrinsic photoluminescence properties of QDs for various optoelectronic applications.

Paul, Livin↗

Observation of site-controlled localized charged excitons in CrI3/WSe2 heterostructures

Abstract Isolated spins are the focus of intense scientific exploration due to their potential role as qubits for quantum information science. Optical access to single spins, demonstrated in III-V semiconducting quantum dots, has fueled research aimed at realizing quantum networks. More recently, quantum emitters in atomically thin materials such as tungsten diselenide have been demonstrated to host optically addressable single spins by means of electrostatic doping the localized excitons. Electrostatic doping is not the only route to charging localized quantum emitters and another path forward is through band structure engineering using van der Waals heterojunctions. Critical to this second approach is to interface tungsten diselenide with other van der Waals materials with relative band-alignments conducive to the phenomenon of charge transfer. In this work we show that the Type-II band-alignment between tungsten diselenide and chromium triiodide can be exploited to excite localized charged excitons in tungsten diselenide. Leveraging spin-dependent charge transfer in the device, we demonstrate spin selectivity in the preparation of the spin-valley state of localized single holes. Combined with the use of strain-inducing nanopillars to coordinate the spatial location of tungsten diselenide quantum emitters, we uncover the possibility of realizing large-scale deterministic arrays of optically addressable spin-valley holes in a solid state platform.

42 ENGINEERING↗

Semiconductor-dielectric-metal solar absorbers with high spectral selectivity

An ideal solar thermal absorber has a sharp transition between high and low absorptance at the wavelength where the blackbody emissive power begins to exceed the solar irradiance. However, most real selective absorbers have a fairly broad transition, leading to both solar absorption and thermal emission losses. Here, we model, fabricate, and characterize a highly selective semiconductor-dielectric-metal (Ga0.46In0.54As - MgF2 - Ag) solar absorber with an extremely sharp transition from high to low absorptance. The thin semiconductor serves as a selective filter, absorbing photons with wavelengths shorter than the bandgap and transmitting those with longer wavelengths. The highly reflective dielectric-metal rear mirror allows the structure to have very low emittance for longer wavelengths. These characteristics provide the absorber with a measured solar absorptance >91% below the bandgap wavelength and infrared emittance <5% at 100 degrees C above the bandgap wavelength. This transition wavelength can be tuned by modifying the semiconductor composition, and modeling indicates that the absorber's optical properties should be stable at high temperatures, making the structure a good candidate for unconcentrated to highly concentrated solar thermal energy conversion.

14 SOLAR ENERGY↗

Erbium-Implanted WS 2 Flakes with Room-Temperature Photon Emission at Telecom Wavelengths

Optically addressable spin impurities in crystals along with device engineering provide an attractive route to realizing quantum technologies in the solid state, but reconciling disparate emitter and host material constraints for a given target application is often challenging. Rare-earth ions in two-dimensional (2D) materials could mitigate this problem given the atomic-like transitions of the emitters and the versatile nature of van der Waals systems. Here we combine ion implantation, confocal microscopy, and ab initio calculations to examine the photon emission of Er-doped WS 2 flakes. Optical spectroscopy reveals narrow, long-lived photoluminescence lines in the telecom band, which we activate after low-temperature thermal annealing. Spectroscopic and polarization-selective measurements show a uniform response across the ensemble, while the fluorescence brightness remains mostly unchanged with temperature, suggesting nonradiative relaxation channels are inefficient. Our results create opportunities for novel solid state devices coupling 2D-hosted, telecom-band emitters to photonic heterostructures separately optimized for photon manipulation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Counterpart identification and classification for eRASS1 and characterisation of the active galactic nuclei content

Context. Accurately accounting for the Active Galactic Nucleus (AGN) phase in galaxy evolution requires a large, clean AGN sample. This is now possible with SRG/eROSITA, which completed its first all-sky X-ray survey (eRASS1) on June 12, 2020. The public Data Release 1 (DR1, Jan 31, 2024) includes 930,203 sources from the western Galactic hemisphere. Aims. The data enable the selection of a large AGN sample and the discovery of rare sources. However, scientific return depends on accurate characterisation of the X-ray emitters, requiring high-quality multi-wavelength data. This paper presents the identification and classification of optical and infrared counterparts to eRASS1 sources. Methods. Counterparts to eRASS1 X-ray point sources were identified using Gaia DR3, CatWISE2020, and Legacy Survey DR10 (LS10) with the Bayesian NWAY algorithm and trained priors. Sources were classified as Galactic or extragalactic via a machine-learning model combining optical/IR and X-ray properties, trained on a reference sample. For extragalactic LS10 sources, photometric redshifts were computed using CIRCLEZ. Results. Within the LS10 footprint, all 656,614 eROSITA/DR1 sources have at least one possible optical counterpart; ∼570 000 are extragalactic and likely AGN. Half are new detections compared to AllWISE, Gaia, and Quaia AGN catalogues. Gaia and CatWISE2020 counterparts are less reliable, due to the survey’s shallowness and the limited amount of features available to assess the probability of being an X-ray emitter. In the Galactic plane, where the overdensity of stellar sources also increases the chance of associations, using conservative reliability cuts, we identified approximately 18 000 Gaia and 55 000 CatWISE2020 extragalactic sources. Conclusions. We have released three high-quality counterpart catalogues – plus the training and validation sets – as a benchmark for the field. These datasets have many applications, but in particular, they empower researchers to build AGN samples tailored for completeness and purity, accelerating the hunt for the Universe’s most energetic engines.

X-rays: general↗

Mapping the cosmic gamma-ray horizon: the 1CGH catalogue of Fermi -LAT detections above 10 GeV

ABSTRACT We present the First Cosmic Gamma-ray Horizon (1CGH) catalogue, featuring $\gamma$-ray detections above 10 GeV based on 16 yr of observations with the Fermi Large Area Telescope (Fermi-LAT) satellite. After carefully selecting a sample of blazars and blazar candidates from catalogues in the literature, we performed a binned likelihood analysis and identified 2791 $\gamma$-ray emitters above 10 GeV, at >3$\sigma$ level, including 62 that are new $\gamma$-ray detections. For each source, we estimated the mean energy of the highest energy bin and analysed them in the context of the cosmic gamma-ray horizon. By adopting a reference model for the extragalactic background light (EBL), we identified a subsample of 525 sources where moderate to severe $\gamma$-ray absorption could be detected across the redshift range of 0–3. This work provides the most up-to-date compilation of detections above 10 GeV, along with their redshift information. We condense extensive results from the literature, including reports on observational campaigns dedicated to blazars and $\gamma$-ray sources, thereby delivering an unprecedented review of the redshift information for sources detected above 10 GeV. Additionally, we highlight key 1CGH sources where redshift information remains incomplete, offering guidance for future optical observation campaigns. The 1CGH catalogue aims to track the most significant sources for studying the $\gamma$-ray transparency of the Universe. Furthermore, it provides a targeted subsample where the EBL optical depth, $\tau _{(E,z)}$, can be robustly measured using Fermi-LAT data.

Arsioli, Bruno (ORCID:0000000181666602)↗

Protein and nucleic acid detection for microfluidic devices

The present invention relates to methods for detecting targets by employing a temperature control system with a microfluidic device. The system allows for non-contact heating by employing an infrared emitter. In some instances, the system can be used in conjunction with a centrifugal microfluidic device. Optionally, a mask can be implemented to provide selective heating of desired assay areas of the device.

Koh, Chung-Yan↗

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. Here, the laser method provides enhanced conductivity and implied open circuit voltage while reducing emitter saturation current density and surface heating, as opposed to conventional high-temperature furnace annealing of the bulk Si wafer with a TOPCon structure. We identify an appropriate laser wavelength, fluence, and layer thickness using modeling and simulations. Raman and Hall effect measurements demonstrate increased crystallinity and dopant activation, whereas photoconductive decay shows enhanced surface and interface passivation quality. Additionally, we examine the role of subsequent SiNx deposition on further improving the passivation of laser-processed TOPCon layers to achieve a 5.9 kΩ/sq film sheet resistance, 2 ms effective carrier lifetime, 718 mV implied open-circuit voltage (iVOC), and 8.6 fA/cm 2 one-side recombination current density (J0) with the potential for further passivation improvement via laser process and a-Si layer thickness optimization.

14 SOLAR ENERGY↗

Er Al :Al 2 ⁢O 3 for telecom-band photonics: Electronic structure and optical properties

Er-doped Al 2 ⁢O 3 is a promising host for telecom-band integrated photonics. Here, in this study, we combine ab initio calculations with a symmetry-resolved analysis to elucidate substitutional Er on the Al site (Er Al ) in 𝛼−Al 2 ⁢O 3 . First-principles relaxations confirm the structural stability of Er Al . We then use the local trigonal crystal-field symmetry to classify the Er-derived impurity levels by irreducible representations and to derive polarization-resolved electric-dipole selection rules, explicitly identifying the symmetry-allowed 𝑓−𝑑 hybridization channels. Kubo-Greenwood absorption spectra computed from Kohn-Sham states quantitatively corroborate these symmetry predictions. Furthermore, we connect the calculated intra-4⁢𝑓 line strengths to Judd-Ofelt theory, clarifying the role of 4⁢𝑓−5⁢𝑑 admixture in enabling optical activity. Notably, we predict a characteristic absorption near 1.47 µ⁢m (telecom band), relevant for on-chip amplification and emission. To our knowledge, a symmetry-resolved first-principles treatment of Er:Al 2 ⁢O 3 with an explicit Judd-Ofelt interpretation has not been reported, providing a transferable framework for tailoring rare-earth dopants in wide-band-gap oxides for integrated photonics. Our results for the optical spectra are in good agreement with experimental data. The resulting symmetry-based selection rules translate directly to polarization-dependent coupling in Al 2 ⁢O 3 integrated photonic waveguides and resonators, enabling device-level design of TE/TM-mode interaction with Er emitters in the 1.5-µ⁢m telecom band.

Er-doped Al2O3↗

Effects of pillar design on the thermal performance of vacuum-insulated glazing

Vacuum-insulated glazing (VIG) with a low-emittance coating has a great market potential as an effective transparent insulator. The thermal insulating performance of VIG is determined by its design, including material selection and configuration of different components. Thermal conductance of the vacuum gap as a transport bottleneck is one of the primary factors controlling the thermal transport across VIG. In particular, because support pillars provide the main thermal transport channels across the vacuum gap, increasing the pillar thermal resistance is a key strategy for creating effective thermal insulation while maintaining the vacuum space. Here, the effects of various pillar design parameters, such as thermal conductivity, geometry, and arrangement, on the VIG thermal performance were comprehensively investigated via the finite element method. In addition, analytical models for thermal transport were examined and thermal conductance across the VIG unit was experimentally measured for validation. The pillar design parameters, especially the height, shape, spacing, and arrangement of the pillars, showed significant effects on the thermal performance of VIG. This research also shows that the smaller contact area for horizontal pillars can effectively decrease the heat loss by more than 30%. Because current VIG analytical equations of thermal performance are only applicable to cylindrical pillars, an analytical equation that can better describe the thermal performance of rectangular parallelepiped pillars is presented, along with a discussion about the mechanism of thermal transfer for different pillar shapes. Thermo-mechanical analyses based on 3D FEM simulations can provide valuable insights into the effect of various design parameters on the overall performance the VIG, allowing for the development of an optimal VIG design.

36 MATERIALS SCIENCE↗

Selective acoustic control of photon-mediated qubit-qubit interactions

Quantum technologies such as quantum sensing, quantum imaging, quantum communications, and quantum computing rely on the ability to actively manipulate the quantum state of light and matter. Quantum emitters, such as color centers trapped in solids, are a useful platform for the realization of elementary building blocks (qubits) of quantum information systems. In particular, the modular nature of such solid-state devices opens up the possibility to connect them into quantum networks and create nonclassical states of light shared among many qubits. The function of a quantum network relies on efficient and controllable interactions among individual qubits. In this context, we present a scheme where optically active qubits of differing excitation energies are mutually coupled via a dispersive interaction with a shared mode of an optical cavity. This generally off-resonant interaction is prohibitive of direct exchange of information among the qubits. However, we propose a scheme in which by acoustically modulating the qubit excitation energies it is, in fact, possible to tune to resonance a preselected pair of qubits and thus open a communication channel between them. This method potentially enables fast (approximately nanoseconds) and parallelizable on-demand control of a large number of physical qubits. In this work, we develop an analytical and a numerical theoretical model demonstrating this principle and suggest feasible experimental scenarios to test the theoretical predictions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A large, deep 3 deg2 survey of H α, [O iii ], and [O ii ] emitters from LAGER: constraining luminosity functions

ABSTRACT We present our measurements of the H α, [O iii], and [O ii] luminosity functions as part of the Lyman Alpha Galaxies at Epoch of Reionization (LAGER) survey using our samples of 1577 z = 0.47 H α-, 3933 z = 0.93 [O iii]-, and 5367 z = 1.59 [O ii]-selected emission line galaxies in a 3 deg2 single, CTIO/Blanco DECam pointing of the COSMOS field. Our observations reach 5σ depths of 8.2 × 10−18 erg s−1 cm−2 and comoving volumes of (1−7) × 105 Mpc3 making our survey one of the deepest narrow-band surveys. We select our emission line galaxies via spectroscopic confirmation, photometric redshifts, and colour–colour selections. We measure the observed luminosity functions for each sample and find best fits of $\phi ^\star = 10^{-3.16^{+0.09}_{-0.09}}$ Mpc−3 and $L^\star = 10^{41.72^{+0.09}_{-0.09}}$ erg s−1 for H α, $\phi ^\star = 10^{-2.16^{+0.10}_{-0.12}}$ Mpc−3 and $L^\star = 10^{41.38^{+0.07}_{-0.06}}$ erg s−1 for [O iii], and $\phi ^\star = 10^{-1.97^{+0.07}_{-0.07}}$ Mpc−3 and $L^\star = 10^{41.66^{+0.03}_{-0.03}}$ erg s−1 for [O ii], with α fixed to −1.75, −1.6, and −1.3, respectively. An excess of bright >1042 erg s−1 [O iii] emitters is observed and may be due to active galactic nucleus (AGN) contamination. Corrections for dust attenuation are applied assuming AHα = 1 mag. We also design our own empirical rest-frame g − r calibration using SDSS DR12 data, test it against our z = 0.47 H α emitters with zCOSMOS 1D spectra, and calibrate it for (g − r) between −0.8 and 1.3 mag. Dust and AGN-corrected star formation rate densities (SFRDs) are measured as log10ρSFR/(M⊙ yr−1 Mpc−3) = −1.63 ± 0.04, −1.07 ± 0.06, and −0.90 ± 0.10 for H α, [O iii], and [O ii], respectively. We find our [O iii] and [O ii] samples fully trace cosmic star formation activity at their respective redshifts in comparison to multiwavelength SFRDs, while the H α sample traces ∼70 per cent of the total z = 0.47 SFRD.

Khostovan, A. A.↗

Conversion of Classical Light Emission from a Nanoparticle‐Strained WSe 2 Monolayer into Quantum Light Emission via Electron Beam Irradiation

Abstract Solid‐state single photon emitters (SPEs) within atomically thin transition metal dichalcogenides (TMDs) have recently attracted interest as scalable quantum light sources for quantum photonic technologies. Among TMDs, WSe 2 monolayers (MLs) are promising for the deterministic fabrication and engineering of SPEs using local strain fields. The ability to reliably produce isolatable SPEs in WSe 2 is currently impeded by the presence of numerous spectrally overlapping states that occur at strained locations. Here nanoparticle (NP) arrays with precisely defined positions and sizes are employed to deterministically create strain fields in WSe 2 MLs, thus enabling the systematic investigation and control of SPE formation. Using this platform, electron beam irradiation at NP‐strained locations transforms spectrally overlapped sub‐bandgap emission states into isolatable, anti‐bunched quantum emitters. The dependence of the emission spectra of WSe 2 MLs as a function of strain magnitude and exposure time to electron beam irradiation is quantified and provides insight into the mechanism for SPE production. Excitons selectively funnel through strongly coupled sub‐bandgap states introduced by electron beam irradiation, which suppresses spectrally overlapping emission pathways and leads to measurable anti‐bunched behavior. The findings provide a strategy to generate isolatable SPEs in 2D materials with a well‐defined energy range.

2D material↗

Quantifying atmospheric carbon removal at pulp and paper mills: a life cycle assessment across system boundaries

The pulp and paper industry is a promising yet underexplored platform for large-scale carbon dioxide removal (CDR) due to its use of biogenic feedstocks and production of concentrated CO 2 emissions from point sources. This study presents the first comprehensive life cycle assessment (LCA) of retrofitting an amine-based carbon capture and storage (CCS) system into a representative virgin kraft pulp and paper mill in the Southeastern U.S. We evaluate carbon removal across five system configurations, applying both static and dynamic LCA methods under multiple functional units: CO 2 captured, biomass input, and paper output. Results show that CCS retrofits can convert a conventional mill from a net emitter into a net carbon sink, with total removal efficiencies from 17% to 92% (metric tonnes of CO 2 removed per metric tonne of CO 2 available for removal under selected boundary conditions). When carbon removal is normalized to the quantity of biogenic CO 2 captured—a narrow, gate-to-gate system boundary that considers only CCS facility emissions—removal efficiencies reached as high as 92%. The use of such narrow boundaries aligns with precedents in traditional LCA methodology, where gate-to-gate assessments are commonly applied to isolate process-level performance and allocate emissions accordingly, providing a consistent basis for comparison across technologies. Under broader cradle-to-grave boundaries—which begin tracking carbon at the point of its physical removal from the atmosphere via photosynthesis in the forest, and extend to include upstream forest operations, mill-wide emissions, and downstream product decomposition—efficiencies declined, ranging from 17% to 46% under static assumptions and dropping to 12% when accounting for dynamic biogenic carbon fluxes over time. These results underscore how system boundary definitions influence reported outcomes, while also illustrating the complementary roles of narrow and broad perspectives for different decision-making contexts.

09 BIOMASS FUELS↗

Robust passivation of CdSeTe based solar cells using reactively sputtered magnesium zinc oxide

Magnesium zinc oxide (MZO, Mg x Zn 1-x O) is a leading emitter for CdTe-based solar cells due to its transparency and the ability to tune its conduction band offset with the absorber. Devices employing alloyed cadmium selenide telluride (CST, CdSe y Te 1-y ) absorbers achieved high efficiency (>19%) using MZO deposited by reactive sputtering over a broad composition range (3.68–3.92 eV, x: 0.20–0.35). Minimal differences in implied and measured open circuit voltage indicate that the contacts are well passivated and highly selective across the spectrum of MZO employed. Device performance insensitivity to MZO composition, which is not observed in CdTe devices, is attributed to the formation of an oxygenated interface layer. Se volatility creates a group VI deficiency at the interface that drives O migration from the MZO into the absorber. This introduces conductivity in the emitter not present in its as-deposited state, contributing to the exceptional performance observed. It is shown that the quality of device passivation depends on the oxidation state of the as-deposited MZO such that intelligent control and management of the reactive sputtering process is required.

36 MATERIALS SCIENCE↗

Simulations of positron injector for Ce+BAF

A baseline concept for a continuous wave (CW) polarized positron injector was developed for the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab. This concept is based on the generation of CW longitudinally polarized positrons by a high-current, polarized electron beam (1 mA, 130‑370 MeV, and 90% longitudinal polarization) that passes through a rotating, water-cooled, tungsten target. The simulation results for the Ce+BAF injector at the Low Energy Recirculator Facility (LERF) are presented, including positron beam generation, capture, energy selection, and acceleration to 123 MeV. The positron yield (or positron current) and longitudinal polarization are calculated considering the longitudinal and transverse CEBAF acceptances (<1% energy spread, <1 mm bunch length and normalized emittance of <100 mm mrad). The impact of target thickness, drive electron beam energy, and transverse size on positron yield within the required emittance limit is evaluated.

Accelerator Physics↗

Positron Injector for Ce+BAF

A baseline concept for a continuous wave (CW) polarized positron injector was developed for the CEBAF at Jefferson Lab. This concept is based on the generation of CW longitudinally polarized positrons by a high-current, polarized electron beam 1 mA, 130-370 MeV, and 90% longitudinal polarization that passes through a rotating, water-cooled, tungsten target. The simulations for the Ce+BAF injector at the Low Energy Recirculator Facility (LERF) are performed, including positron beam generation, capture, energy selection, and acceleration to 123 MeV. The positron yield (or positron current) and longitudinal polarization are calculated considering the longitudinal and transverse CEBAF acceptances (<1% energy spread, 1.2 mm bunch length and normalized emittance of 100 mm·mrad). The impact of target thickness, electron beam energy, and transverse size on positron yield within the required emittance limit is evaluated. Target thermal and structural FEM analyses (ANSYS Fluent) are performed to determine the maximum electron beam current and minimum transverse beam size on the target.

Benesch, Jay [Thomas Jefferson National Accelerato↗