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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Basic corrections to predictions of solar cell performance required by nonlinearities

The superposition principle is used to derive the approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. The derivation requires the linearity of the boundary value problems that underlie the electrical characteristics. The shifting approximation is invalid if considerable photocurrent and considerable dark current both occur within the junction space-charge region; it is invalid also if sizable series resistance is present or if high-injection concentrations of holes and electrons exist within the quasi-neutral regions.

Lindholm, F. A.↗
NASA NTRS1978

Preliminary results on the conversion of laser energy into electricity

A preliminary experiment was performed to investigate conversion of 10.6 micron laser energy to electrical energy via a laser-sustained argon plasma. Short-circuit currents of 0.7 A were measured between a thoriated-tungsten emitter and collector electrodes immersed in the laser-sustained argon plasma. Open-circuit voltages of about 1.5 V were inferred from the current-voltage load characteristics. The dominant mechanism of laser energy conversion is uncertain at this time. Much higher output powers appear possible.

Thompson, R. W.↗
NASA NTRS1978

A Schottky-barrier solar cell on sliced polycrystalline GaAs

Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 microns. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have a minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.

Yeh, Y. C. M.↗
NASA NTRS1978

Recovery of shallow junction GaAs solar cells damaged by electron irradiation

Solar cells operated in space are subject to degradation from electron and proton radiation damage. It has been found that for deep junction p-GaAlAs/p-GaAs solar cells some of the electron radiation damage is removed by annealing the cells at 200 C. The reported investigation shows that shallow junction p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells irradiated with 1 MeV electrons show a more complete recovery of short-circuit current than do the deep junction cells. The heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells studied were fabricated using the etch-back epitaxy process.

Walker, G. H.↗
NASA NTRS1978

Analysis of the interaction of an electron beam with a solar cell. I. II

The short-circuit current generated by the electron beam of a scanning electron microscope when it impinges on the N-P junction of a solar cell is known to be dependent on the configuration used to investigate the cell's response, and the situation for one specific configuration is analyzed. This configuration is the case in which the highly collimated electron beam strikes the edge of a planar junction a variable distance away from the edge of the depletion layer. An earlier treatment is generalized to encompass the ohmic contact at the back surface. The analysis employing Fourier and Wiener-Hopf techniques shows that it is impractical to determine the bulk diffusion length of a solar cell by a SEM used in the studied configuration unless the ohmic contact is partially removed.

Von Roos, O.↗
NASA NTRS1979

Cable-fault locator

Inexpensive system automatically indicates location of short-circuited section of power cable. Monitor does not require that cable be disconnected from its power source or that test signals be applied. Instead, ground-current sensors are installed in manholes or at other selected locations along cable run. When fault occurs, sensors transmit information about fault location to control center. Repair crew can be sent to location and cable can be returned to service with minimum of downtime.

Cason, R. L.↗
NASA NTRS1978

Lifetime and diffusion length measurements on silicon material and solar cells

Experimental methods were evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities found in metallurgical grade silicon, impurities which may be residual in low-cost silicon intended for use in terrestrial flat-plate arrays. Lifetime measurements were made using a steady-state photoconductivity method. Diffusion length determinations were made using short-circuit current measurements under penetrating illumination. Mutual consistency among all experimental methods was verified, but steady-state photoconductivity was found preferable to photoconductivity decay at short lifetimes and in the presence of traps. The effects of a number of impurities on lifetime in bulk material, and on diffusion length in cells fabricated from this material, were determined. Results are compared with those obtained using different techniques. General agreement was found in terms of the hierarchy of impurities which degrade the lifetime.

Othmer, S.↗
NASA NTRS1977

Epitaxial solar-cell fabrication, phase 2

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

Daiello, R. V.↗
NASA NTRS1979

Effect of parasitic plasma currents on solar-array power output

Solar-array voltage-current curves are calculated by assuming the existence of parasitic loads that consist of local currents of charged particles collected by the array. Three cases of interest are calculated to demonstrate how the distribution and magnitude of parasitic currents affect output. Solar array performance degradation became significant when the total parasitic current plus the load current exceeded the short-circuit current. Approximate graphical methods were useful for many applications. Power loss, which was calculated by summing the product of parasitic current and the local potential, underestimated the loss in maximum power.

Domitz, S.↗
NASA NTRS1979

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance.

Prince, J. L.↗
NASA NTRS1979

Modeling of thin, back-wall silicon solar cells

The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

Baraona, C. R.↗
NASA NTRS1979

Shallow-homojunction GaAs solar cells

Single-crystal GaAs shallow-homojunction solar cells on GaAs or Ge substrates, without Ga sub 1-x Al sub x As window layers, that have conversion efficiencies exceeding 20% at AM1 (17% at AMO). Using a simple theoretical model, good fits were obtained between computer calculations and experimental data for external quantum efficiency and conversion efficiency of cells with different values of n+ layer thickness. The calculations not only yield values for material properties of the GaAs layers composing the cells but will also permit the optimization of cell designs for space and terrestrial applications. Preliminary measurements indicate that the shallow-homojunction cells are resistant to electron irradiation. In the best test so far, bombardment with 1 x 10 to the 16th power/sq cm fluence of 1 MeV electrons reduced the short-circuit current by only about 6%.

Fan, J. C. C.↗
NASA NTRS1979

Some TEM observations of Al2O3 scales formed on NiCrAl alloys

The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids were observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. The voids resulted from an excess number of oxygen vacancies near the oxidemetal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidation of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al, Cr)2O3 and Ni(Al, Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationship between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

Smialek, J.↗
NASA NTRS1977

Optimum antireflection coating for Antireflection-coated Metal-Oxide-Semiconductor /AMOS/ solar cells

Consideration is given to the design of a single-layer optimum antireflection coating for AMOS (antireflection-coated metal-oxide-semiconductor) solar cells to match the entire sunlight spectrum. The energy conversion efficiency is maximized by maximizing the open-circuit voltage and the short-circuit current. The former is maximized by oxidation techniques and the latter is maximized by the light-coupling into the solar cell. With reference to the effective index of refraction as obtained by ellipsometry, examples of optimum antireflection coatings for 60-A Au-GaAs solar cells are presented.

Yeh, Y. C. M.↗
NASA NTRS1978

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Walker, G. H.↗
NASA NTRS1978

Preliminary evaluation of glass resin materials for solar cell cover use

Silicon solar cells and silicon wafers coated with a heat-curable resin consisting of alternating Si-O atoms were subjected to three tests to evaluate the potential utility of this coating in space environments. These included UV irradiation in vacuum at an intensity of 10 air mass zero UV energy-equivalent solar constants for 728 hours followed by a long thermal cycle; 15 thermal shock cycles between 100 C and minus 196 C; and high temperature and humidity (65 C at 90% relative humidity). The UV tests resulted in a 8 to 24% loss in short-circuit current and darkening of the covers. Modification of the resin to provide a better match between the coefficients of expansion of the resin and silicon improved resistance to thermal shock, but also increased the darkening effect under UV irradiation. Silicon wafers coated with the resin were not adversely affected by the temperature/humidity test.

Marsik, S. J.↗
NASA NTRS1979

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Fossum, J. G.↗
NASA NTRS1979

Some TEM observations of Al2O3 scales formed on NiCrAl alloys

The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids have been observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. It was postulated that the voids resulted from an excess number of oxygen vacancies near the oxide-metal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidations of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al,Cr)2O3 and Ni(Al,Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationships between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

Smialek, J.↗