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At least 73 records · Page 4

Thermally-restorable optical degradation and the mechanism of current transport in Cu2S-CdS photovoltaic cells

The photovoltaic properties of single-crystal Cu2S-CdS heterojunctions have been investigated as a function of heat treatment by detailed measurements of the dependence of short-circuit current on photon energy, temperature, and the state of optical degradation or enhancement. A coherent picture is formulated for the relationship between enhancement and optical degradation, and their effect on the transport of short-circuit photoexcited current and dark, forward-bias current in the cell. Optical degradation in the Cu2S-CdS cell is shown to be closely identical to optical degradation of lifetime in a homogeneous CdS:Cd:Cu crystal, indicating that the CdS:Cu layer near the junction interface controls carrier transport in the cell. It is proposed that both the photoexcited short-circuit current and the dark, forward-bias current are controlled by a tunneling-recombination process through interface states.

Fahrenbruch, A. L.↗

Sticking probabilities for the adsorption of hydrogen on clean Ni/111/, Ni/100/, Ni sheet and evaporated Ni films

Determination of the sticking probability for hydrogen adsorption on clean Ni(111), Ni(100), polycrystalline nickel sheet, and polycrystalline evaporated nickel films, using a modification of the reflection detector technique of Horgan and King (1970) for metal films. The initial sticking probability for hydrogen adsorption on a nickel film at 300 K by the proposed method is found to be 0.25 in comparison to 0.35 for hydrogen adsorption on a nickel film using the reflection detector technique. Also, the sticking probabilities on smooth single-crystal (111) and (100) planes and polycrystalline sheets are found to be lower than those on the rougher polycrystalline nickel films.

Horgan, A. M.↗

The two-dimensional tunnel structures of K3Sb5O14 and K2Sb4O11

The structures of K3Sb5O14 and K2Sb4O11 have been solved by the single-crystal X-ray direct method and the heavy-atom method, respectively. The structure of K3Sb5O14 is orthorhombic, with space group Pbam and cell parameters a = 24.247 (4), b = 7.157 (2), c = 7.334 (2) A, Z = 4. The structure of K2Sb4O11 is monoclinic, with space group C2/m and cell parameters a = 19.473 (4), b = 7.542 (1), c = 7.198 (1) A, beta = 94.82 (2) deg, Z = 4. A full-matrix least-squares refinement gave R = 0.072 and R = 0.067, respectively. In both structures, oxygen atoms form an octahedron around each Sb atom and an irregular polyhedron around each K atom. By sharing corners and edges, the octahedra form a skeleton network having intersecting b-axis and c-axis tunnels. The K(+) ions, which have more than ten oxygen near neighbors, are located in these tunnels. Evidence for K(+)-ion transport within and between tunnels comes from ion exchange of the alkali ions in molten salts and anisotropic temperature factors that are anomalously large in the direction of the tunnels.

Hong, H. Y.-P.↗

Assessment of the technology required to develop photovoltaic power system for large scale national energy applications

A technical assessment of a program to develop photovoltaic power system technology for large-scale national energy applications was made by analyzing and judging the alternative candidate photovoltaic systems and development tasks. A program plan was constructed based on achieving the 10 year objective of a program to establish the practicability of large-scale terrestrial power installations using photovoltaic conversion arrays costing less than $0.50/peak W. Guidelines for the tasks of a 5 year program were derived from a set of 5 year objectives deduced from the 10 year objective. This report indicates the need for an early emphasis on the development of the single-crystal Si photovoltaic system for commercial utilization; a production goal of 5 x 10 to the 8th power peak W/year of $0.50 cells was projected for the year 1985. The developments of other photovoltaic conversion systems were assigned to longer range development roles. The status of the technology developments and the applicability of solar arrays in particular power installations, ranging from houses to central power plants, was scheduled to be verified in a series of demonstration projects. The budget recommended for the first 5 year phase of the program is $268.5M.

Lutwack, R.↗

Friction and wear of tin and tin alloys from minus 100 C to 150 C

Sliding friction experiments were conducted with an iron (110) single-crystal pin sliding on single and polycrystalline tin and tin alloys. Specimens were examined at various ambient temperatures from -100 to 150 C. Applied loads varied from 1 to 50 grams, and sliding velocity was constant at 0.7 mm/min. Results indicate that the crystal transformation of tin influences the friction coefficient. Friction was higher for the diamond structure (gray tin) than it was for the body-centered tetragonal structure (white tin). Bismuth arrested the crystal transformation, which resulted in constant friction over the temperature range -100 to 150 C. Both copper and aluminum enhanced the kinetics of transformation, with aluminum producing a nearly twofold change in friction with the crystal transformation.

Buckley, D. H.↗

The crystal chemistry of armalcolites from Apollo 17

Single-crystal X-ray studies of armacolites from the 2 to 5 mm fraction of Apollo 17 soils 75082 and 78502 are evaluated. The two types of armacolites studied show slight composition differences and identical structures. Precession photographs of each crystal show the two forms, ortho and para, to have the same space group and nearly the same cell dimensions. The analyses conducted support the proposition that the difference in optical properties is caused by differing MgO and Cr2O3 contents.

Smyth, J. R.↗

Edge-defined film-fed growth of beta-alumina and Mg-substituted beta-alumina

High Na vapor pressure, peritectic decomposition, and high reactivity of the melt complicate the growth of beta-alumina crystals. These difficulties were overcome by using a high-pressure (300 psig) growth chamber, Na2O-rich melts, and Ir for all surfaces in contact with the melt. These procedures were combined with the edge-defined film-fed growth technique to produce single-crystal beta-alumina tubes and ribbons.

Morrison, A. D.↗

Optical absorption components of light-modulated absorption spectrum of CdS

The amplitude and decay coefficient of light-induced modulation of absorption (LIMA) was measured as a function of wavelength from 535 to 850 nm for single-crystal CdS. The decay coefficient exhibited a discontinuous resonance at 710 nm which was due to the overlap and cancellation of two opposing absorption changes. A method was developed to separate these opposing absorption changes using the measured decay coefficients. The discrete-level-to-band energy for one absorption change was found to be 1.64 eV. An improved model was developed which contains two associated levels in the band gap separated by 0.32 eV.

Conway, E. J.↗

Experimental shock metamorphism of maximum microcline

A series of recovery experiments are conducted to study the behavior of single-crystal perthitic maximum microcline shock-loaded to a peak pressure of 417 kbar. Microcline is found to deform in a manner similar to quartz and other alkali feldspars. It is observed that shock-induced cleavages occur initially at or slightly below the Hugoniot elastic limit (60-85 kbar), that shock-induced rather than thermal disordering begins above the Hugoniot elastic limit, and that all types of planar elements form parallel to crystallographic planes of low Miller indices. When increasing pressure, it is found that bulk density, refractive indices, and birefringence of the recovered material decrease and approach diaplectic glass values, whereas disappearance and weakening of reflections in Debye-Sherrer patterns are due to disordering of the feldspar lattice.

Robertson, P. B.↗

Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Heinemann, K.↗

Infrared upconversion as a means of seeing in the dark

A new approach to seeing in the dark is described which is based on the principles of nonlinear optics employing a crystal such as lithium iodate. A nonlinear optical device capable of producing photons at higher frequencies from lower-frequency incident light is shown to upconvert infrared light directly into visible light. The major advantages of the infrared upconversion process is that it permits the infrared signal to be detected by photon-counting devices presently available for the visible spectral region, and that it can provide sensitivity to infrared radiation without the need for cryogenic cooling of the detector used. Early works on infrared upconversion are reviewed. The development of applications is discussed as to astronomical spectroscopy and infrared image upconversion involving either angular or positional resolution elements. The demonstration of infrared upconversion in rectangular waveguides of single-crystal GaAs by Anderson et al. (1971) indicates future possibilities in upconversion by the use of integrated optics devices.

Gurski, T. R.↗

Study of growth of single crystal ribbon in space

The technical feasibility is studied of growing single-crystal silicon ribbon in the space environment. Procedures are described for calculating the electromagnetic fields produced in a silicon ribbon by an rf shaping coil. The forces on the ribbon and the degree of shaping to be expected are determined. The expected steady-state temperature distribution in the ribbon is calculated in the one-dimensional approximation. Calculations on simplified models indicate, that lack of flatness of the shaped ribbon and excessive heating of the melt by the eddy currents induced by the shaping fields may pose problems. An analysis of the relative effects of various kinds of forces other than electromagnetic showed that in the space environment capillarity forces would dominate, and that the shape of the melt is thus principally determined by the shape of any solids with which it comes in contact. This suggests that ribbon may be produced simply by drawing between parallel wires. A concept is developed for a process of off-angle growth, in which the ribbon is pulled at an angle to the solidification front. Such a process promises to offer increased growth rate, better homogeneity, and thinner ribbon.

Wood, V. E.↗

Evaluation of silicon ribbon material for solar cell fabrication

Optical microscopy, electron microscopy, and X-ray diffraction were utilized to characterize silicon ribbon structure. Complex twin formation was observed in nearly all ribbons examined. Twins formed in the 110-plane 112-line ribbon orientation appear stable, and this orientation may be preferable when the ribbon is utilized for solar cells. In addition to twinning, grain boundaries and other structural defects were observed in the ribbon material. Hall effect, resistivity, spreading resistance, surface photovoltage, and solar cell electrical/optical measurements were performed on ribbon samples and correlated with structural and ribbon growth characteristics. Only those ribbon samples with either single-crystal structure or with 'parallel' twin formations were capable of solar-cell performance approaching that of Czochralski material.

Leipold, M.↗

Interaction of metal layers with polycrystalline Si

Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

Nakamura, K.↗

Magnetic field generated resistivity maximum in graphite

In a zero magnetic field, the electrical resistivity of highly oriented pyrolytic (polycrystalline) graphite drops smoothly with decreasing temperature, becoming constant below 4 K. However, in a fixed applied magnetic field, the resistivity goes through a maximum as a function of temperature, with a larger maximum for a larger field intensity. The temperature of the maximum increases with field intensity, but saturates to a constant value near 25 K (the exact temperature depends on the sample) at high intensity. In single-crystal graphite, a maximum in resistivity as a function of temperature is also present, but has the effects of Landau level quantization superimposed. Several possible explanations for the resistivity maximum are proposed, but a complete explanation awaits detailed calculations involving the energy band structure of graphite, and the particular scattering mechanisms involved.

Woollam, J. A.↗

Aluminum under high pressure. I - Equation of state

A curve of applied pressure versus lattice constant is calculated for single-crystal aluminum. It results from an application of the method of structural expansions for deriving the energies of simple metals, a method known to give reasonable results for the elastic constants even at second order in the effective electron-ion interaction. The latter is taken from Fermi-surface analysis, and it is verified that the extant face-centered cubic structure remains the preferred crystalline phase up to the highest pressures considered. Arguments are given to suggest that the curve should have reasonable a priori accuracy and can admit possible improvement if experimental data in the intermediate-pressure region can be provided to refine the (in principle) energy-dependent pseudopotential. At three megabars, the lattice constant is reduced by only 22 per cent; the ion cores at this pressure are still very well separated.

Friedli, C.↗

Metal-insulator-semi-conductor studies of lead telluride

The capacitance and conductance-voltage characteristics were measured on metal-insulator-semiconductor capacitors fabricated with zirconium dioxide films on single-crystal lead telluride. At 77 K, on both n- and p-type substrates, evidence of surface potential control was obtained. Comparison of the measured capacitance-voltage characteristics with those calculated from the equilibrium solution of the one-dimensional Poisson equation indicated qualitative agreement, although the slope of the measured capacitance in the region near the capacitance minimum was less steep than calculated.

Lilly, D. A.↗