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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Accurate Efficiency Measurements for Emerging PV: A Comparison of NREL's Steady-State Performance Calibration Protocol Between Conventional and Emerging PV Technologies

Emerging PV technologies (e.g. Perovskite, and Quantum Dot) are commonly known to possess challenges for accurate performance measurement under the existing IEC 60904 series of standards, which were developed for conventional Si solar cells. Potential performance artifacts depending on scan rates and directions and light bias exposure history are often seen in those emerging solar cells. To avoid these artifacts and provide an unbiased and reliable efficiency measurement, NREL's Cell and Module Performance (CMP) Group has developed a steady-state performance calibration protocol - the asymptotic P MAX method. In this paper, we applied this procedure to four PV cell technologies, Si, CIGS, perovskite, and Quantum Dot (QD), and compared their performance variations between the transient and the steady-state conditions. By comparison, we found that the performance parameters ( i.e. V OC , I SC , FF, ..eta..) measured between fast I-V scans (and the asymptotic method (steady-state) change significantly for perovskite and QD cells. These changes do not happen for Si and CIGS cells. Furthermore, the statistical performance analysis on nearly 100 emerging cells received globally (including OPV, Perovskite, and QD) shows that over 70 % of the fast I-V scans have a relative performance deviation larger than 1% compared to those determined using the asymptotic P MAX scan. Given the complex dynamic behavior observed in emerging PV devices, the CMP group at NREL thus only certifies their steady steady-state performance using the Asymptotic P MAX method. We highly recommend similar steady-state performance calibration protocol for all researchers in emerging PV because accuracy in reported efficiencies is critical to the long-term success of those promising new PV technologies.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Chapter 12: Photoelectron Spectroscopy Methods in Solar Cell Research

Photoelectron spectroscopy (PES), also referred to as photoemission spectroscopy, is a direct experimental method for assessing the chemical and electronic properties of materials. The technique is becoming increasingly important in the research of photovoltaic (PV) devices--where, more specifically, X-ray photoelectron spectroscopy (XPS) is used primarily to measure the chemical properties such as composition and contamination of solar cell materials, whereas ultraviolet photoelectron spectroscopy (UPS) reveals key electronic properties such as work function and electronic energy-level positions. PES is a surface-sensitive technique ideally suited for the analysis of thin films and interfaces, either completed ones or during their formation process. Because the new generation of PV devices comprise a multitude of complex interfaces--each of which plays a critical role for performance and functionality--PES analysis of functional cell components has gained even more relevance.

photoelectron spectroscopy↗
DOE OSTI2023

Strategies to improve the mechanical robustness of metal halide perovskite solar cells

We report on the mechanical properties of high-efficiency perovskite solar cells (PSCs) with different chemical components by measuring the fracture energy (G c ) of films and devices. With the help of both macroscopic and microscopic techniques, we identify the locations where fracture takes place in the devices (either adhesive or cohesive failure) with various material and device structures. We propose strategies that can improve the fracture energy of PSCs based on the measured G c : the use of ozone-nucleated atomic layer deposition to improve charge transport layer robustness and the use of 2D perovskites and morphology control to improve the perovskite robustness. Our findings offer a pathway to rationally study the mechanical properties of PSCs and enable such cells to be more mechanically robust to reach commercial viability.

14 SOLAR ENERGY↗
DOE OSTI2022

Nanometer-Scale Measurement of Grid Finger Electrical Conduction Pathways to Detect Series Resistance Degradation of Utility-Scale Silicon Solar Cells

Here, we report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility-scale photovoltaic power plant by imaging the local resistance at the Ag/Si interface of the c-Si front metallization. Scanning spreading resistance microscopy imaging with nanometer (nm) scale spatial resolution revealed that the number of point or small-area electrical contacts decreased substantially in a degraded cell compared to an unaffected cell, demonstrating the root cause of Rs degradation. The decrease in electrical contacts is likely caused by a structural change - the Ag particles in contact with the Si cell (or via a nm-thickness tunneling glass layer) aggregate into bulk Ag, and a highly resistive glass frit forms a belt shape at the Ag/Si interface. This resistive belt, with a thickness of ~1 um, blocks the current conduction from the cell emitter to the Ag grid. Our microscopy results help to unravel unambiguously the degradation mechanism and demonstrate an example of the multiscale characterization approach for understanding degradation in field-weathered PV module.

14 SOLAR ENERGY↗
DOE OSTI2023

Impact of Irradiation-Induced Filter Heating on Calibration of NIR-Longpass-Filtered Reference Solar Cells

Reference solar cells play a crucial role in determining the performance of photovoltaic (PV) devices. In the performance calibration chain of mainstream single-junction PV technologies, common reference cell types include Si, KG-filtered Si, and GaAs cells. For emerging multijunction (MJ) PV technologies, such as CdTe/Si and perovskite/Si, Si reference cells with colored glass near-infrared-longpass (LP) filters like Schott RG-715 and 850 glass have been proposed. They offer a better spectral response that matches the bottom junctions of the emerging MJs, which could lead to lower uncertainties in performance measurements. However, this article reveals a prominent decrease in short-circuit current (ISC) during National Renewable Energy Laboratory's primary calibration over the course of minutes when using this type of LP-filtered reference cell, which could result in unacceptable measurement errors. Unlike quartz or KG filter glasses, LP colored glass filters demonstrate temperature-sensitive cut-on wavelength. When incident irradiance reaches these LP-filtered reference cells, the increased temperature due to light absorption causes a shift of the cut-on to longer wavelength. As a result, the device I SC exhibits a continuous decrease (approximately a 2.5% drop with RG850 LP filter in a 5-min duration) even when the device temperature is controlled at 25 degrees C. To address the temperature gradient issue between colored glass LP filter and the reference cell, we propose the direct integration of thin-film LP semiconductor layer on reference cells. This type of LP-filter-integrated cell has shown minimal temperature-related I SC variation and can serve as a more reliable reference cell source for accurate performance measurements.

14 SOLAR ENERGY↗
DOE OSTI2025

Photovoltaic Mini-Module Soiling Stations: Cooperative Research and Development (Final Report)

Photovoltaic (PV) panels can become soiled due to a variety of environmental factors. This soiling reduces the amount of light reaching the cells and thus their energy output. The ratio of actual output of the soiled device that of a clean device is known as the soiling ratio. The daily change in soiling ratio is known as the soiling rate. To study soiling for different glass coatings. Two soiling stations were fabricated. The stations were designed to monitor the short-circuit current of PV cells encapsulated with glass featuring different coatings and measure the daily soiling ratio with a pair of reference cells, one of which is automatically brushed daily. This work meets the need to understand how the glass coatings perform in additional environments. The stations are designed to quantify both the soiling ratio (the ratio between actual/expected photovoltaic panel power output) as well as differences in anti-soiling performance of different glass coatings. The design of the dirty/clean reference cell system is described by Toth et al. The soiling ratio is calculated by calculating the average irradiance measured within one hour of solar noon by each of the reference cells and then taking the ratio of these daily near-noon averages. The soiling ratio time series for the station deployed in Georgia is shown in Figure 1. This figure shows that the soiling ratio at the site has not yet fallen below 0.99, indicating that peak daily soiling losses have been below 1%. The site was chosen because it is thought to be affected by pollen soiling. With continued monitoring over the course of at least a full year, we expect to be able to observe and quantify pollen soiling events.

14 SOLAR ENERGY↗
DOE OSTI2023

3D and Multimodal X‐Ray Microscopy Reveals the Impact of Voids in CIGS Solar Cells

Small voids in the absorber layer of thin-film solar cells are generally suspected to impair photovoltaic performance. They have been studied on Cu(In,Ga)Se 2 cells with conventional laboratory techniques, albeit limited to surface characterization and often affected by sample-preparation artifacts. Here, synchrotron imaging is performed on a fully operational as-deposited solar cell containing a few tens of voids. By measuring operando current and X-ray excited optical luminescence, the local electrical and optical performance in the proximity of the voids are estimated, and via ptychographic tomography, the depth in the absorber of the voids is quantified. Besides, the complex network of material-deficit structures between the absorber and the top electrode is highlighted. Despite certain local impairments, the massive presence of voids in the absorber suggests they only have a limited detrimental impact on performance.

14 SOLAR ENERGY↗
DOE OSTI2022

Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe

Abstract Cadmium telluride (CdTe) semiconductors are used in thin-film photovoltaics, detectors, and other optoelectronic applications. For all technologies, higher efficiency and sensitivity are achieved with reduced charge carrier recombination. In this study, we use state-of-the-art CdTe single crystals and electro-optical measurements to develop a detailed understanding of recombination rate dependence on excitation and temperature in CdTe. We study recombination and carrier dynamics in high-resistivity (undoped) and arsenic (As)-doped CdTe by employing absorption, the Hall effect, time-resolved photoluminescence, and pump-probe in the 80–600 K temperature range. We report extraordinarily long lifetimes (30 µs) at low temperatures in bulk undoped CdTe. Temperature dependencies of carrier density and mobility reveal ionization of the main acceptors and donors as well as dominant scattering by ionized impurities. We also distinguish different recombination defects. In particular, shallow As Te and deep V Cd −As Cd acceptors were responsible for p-type conductivity. AX donors were responsible for electron capture, while nonradiative recombination centers (V Cd −As Te , As 2 precipitates), and native defects (V Cd −Te Cd ) were found to be dominant in p-type and n-type CdTe, respectively. Bimolecular and surface recombination rate temperature dependencies were also revealed, with bimolecular coefficient T −3/2 temperature dependence and 170 meV effective surface barrier, leading to an increase in surface recombination velocity at high temperatures and excitations. The results of this study allowed us to conclude that enhanced crucible rotation growth of As-doped CdTe is advantageous to As activation, leading to longer lifetimes and larger mobilities and open-circuit voltages due to lower absorption and trapping.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Improved Performance of Cu(InGa)(SeS) 2 PV Modules Using the Reaction of Metal Precursors. Final Report

This project “Improved Performance of Cu(InGa)(SeS) 2 PV Modules using the Reaction of Metal Precursors” was a partnership led by the Institute of Energy Conversion (IEC) at the University of Delaware with Columbia University and the Molecular Foundry at the Lawrence Berkeley National Laboratory. The aim was to develop pathways to improve Cu(InGa)(SeS) 2 (CIGSS) thin film photovoltaic modules using processes compatible with low manufacturing cost. The CIGSS approach investigated was a two-step process including deposition of metal precursor films following by reaction in hydride gases utilizing IEC’s novel reactor. The process was similar to that under commercial development by the project’s industry partner Stion. When Stion went out of business mid-project the focus changed to a rapid thermal process considered more commercially viable. Approaches to improve the performance of solar cells using the reacted films focused on two material innovations. First, the overall Ga content was increased to increase the operating voltage, which is desirable for scale-up to commercial modules. Second, the processing and performance advantages arising from Ag alloying were investigated. Advanced characterization guided process and material development including control of relative composition gradients. Research on the formation of Cu-Ga-In metal precursors utilized sputtering deposition which is normally used in commercial applications. The work resulted in processes for deposition of precursor stacks with increased relative Ga content and effects of deposition parameters on morphology and phase composition were established. It was shown that the metal precursor films have comparable phase composition and morphology so subsequent reaction follows from the same starting point. The addition of Ag to the metal precursors gave more uniform morphology and improved adhesion of reacted films which enable higher reaction temperature for faster processing. A novel outcome was the discovery of a previously undocumented material phase in sputter-deposited and evaporated Ag-Cu-In-Ga thin films. Hydride gas reaction processes including time-temperature-concentration profiles were developed for different precursor compositions. This enables control of composition profiles to engineer through-film gradients for solar cell optimization with characterization and simulations used to correlate measured film composition profiles to measurements of devices. In particular, the gradient of sulfur at the front of the CIGSS film was found to be critical. The simulations guided process development leading to improved reproducibility of devices improved performance with higher Ga content and higher voltage. With Ag-alloyed precursors, the reaction pathways leading were determined. A significant finding was that Ag-alloying increases the reaction rate to completely convert precursor films to the final chalcopyrite which could enable reduced reaction time to benefit manufacturability. To maintain potential commercial viability, the process under investigation was refocused to a rapid thermal process that could potentially be incorporated into an in-line process for manufacturing. Precursors with different composition were capped with an extra selenium layer and reacted in hydrogen sulfide 5-15 minutes, compared to typically 2 hours in the previous multi-step batch process. Critical RTP parameters were identified to control the reaction. Further optimization would be needed for high efficiency solar cells but pathways to high quality devices with further optimization and improved heating uniformity were developed. The project also developed new optoelectronic characterization approaches with a focus on development and application of spatial- and time-resolved photoluminescence and a custom mapping photoluminescence microscope built. It was shown how critical electronic transport properties strongly depend on the chemical composition of the material and that a wide range of samples show inhomogeneity on a length scale larger than the grains in the films. Additionally, two-photon excitation capability was developed to distinguish bulk vs surface losses. The project advances the state-of-the -art for precursor reaction processes in several ways that could impact manufacturing. This includes validation of approaches to increase voltage and establishment of model-guided control to form optimal composition profiles. The application of process control approaches with knowledge of phase formation and reaction pathways can be critically valuable in designing a large-scale process.

14 SOLAR ENERGY↗
DOE OSTI2021

Measurement of Poly-Si Film Thickness on Textured Surfaces by X-Ray Diffraction in Poly-Si/SiOx Passivating Contacts for Monocrystalline Si Solar Cells

Polycrystalline Silicon on tunneling silicon oxide (poly-Si/SiOx) passivating contacts have shown great potential for the next-generation monocrystalline Si (c-Si) industrial photovoltaic technology. However, these cells typically suffer from strong parasitic absorption in the thick front poly-Si layer, which is designed to reduce metal-induced recombination. In previous work, we demonstrated an improved short-circuit current density, Jsc, by thinning the front poly-Si film in an SF6 plasma using the front metal grids as a self-aligned mask, but the sub - 100 nm thick poly-Si film is difficult to measure on an alkaline textured surface. Conventional optical techniques such as spectroscopic ellipsometry cannot be used due to the high scattering nature of the random pyramids. At poly-Si thicknesses below 50 nm, secondary electron microscopy (SEM) has difficulty distinguishing the poly-Si from the underlying c-Si substrate. Here, we demonstrate X-ray diffraction as an effective method to quantitatively measure the front poly-Si thickness. The thickness calculated from the diffraction peak height of the Si(111) crystallographic plane agrees well with the cross-section SEM analysis and simulations using SunSolve. We show that by thinning the front poly-Si from 200 to 60 nm, Jsc increased by 2.4 mA/cm2, while maintaining the same Voc. This led to an absolute efficiency gain of 1.73%. In addition, we also discuss possible reasons for the premature loss of passivation before the removal of all poly-Si, which prevented an even higher gain in Jsc.

light/electron beam induced current↗
DOE OSTI2021

Solar cell contacts: quantifying the impact of interfacial layers on selectivity, recombination, charge transfer, and V oc

Interfacial layers (IFLs) are ubiquitous in solar cells, but their precise impact on carrier transfer rates and the relation of these rates to performance metrics and the concepts of selectivity and recombination is lacking. We report the use of a well-defined interdigitated back-contact (IBC) silicon solar cell to determine the precise role of such IFLs. We characterize the action of the common IFL spiro-OMeTAD by making it a third contact to the IBC cell. This architecture creates three solar cells within a single structure that, with numerical simulation, provide the exchange current densities (i.e., charge transfer rates) for electrons ( J 0n ) and holes ( J 0p ) and the quasi Fermi-level splitting in the absorber, which measures the balance of generation and recombination. Further, we describe the relation of V oc to contact recombination, the asymmetry in electron/hole collection rates at a single contact (contact selectivity), and the asymmetry in collection rates of the same carrier at separate contacts (carrier selectivity). Relative to bare gold, neat spiro-OMeTAD reduces J 0n and J 0p (their geometric mean ( J 0n J 0p ) 0.5 decreases by 10 4 ), decreasing contact recombination. Addition of the common dopant Li-TFSI and air increase J 0p / J 0n by 10 6 with little effect on ( J 0n J 0p ) 0.5 , increasing contact hole selectivity. The significant increase in V oc observed by introducing spiro-OMeTAD/Li-TFSI IFLs into the cells studied, however, is due to an increase in the carrier selectivity rather than the contact selectivity or recombination of the spiro-OMeTAD-modified contact. Operando measurements further show voltage-dependent changes in the J 0 s, demonstrating that spiro-OMeTAD contributes to hysteresis. Broader context : Solar cells operate by photogenerating excess charge carriers in an absorber material and, in competition with recombination, asymmetrically extracting them at so-called carrier-selective contacts, one that ideally collects only electrons and the other, only holes. Particularly in emerging photovoltaics such as perovskites, thin layers of organic semiconductors or related materials are introduced between the absorber and contact to improve power conversion efficiency. In terms of interfacial charge transfer, a prevailing view is that such interfacial layers improve performance by helping block the collection of the undesired carrier, considered a form of recombination. We use a novel platform to study the simultaneous impact of spiro-OMeTAD, a common interfacial layer, on the collection of electrons, the collection of holes, and on the recombination of electrons and holes. We quantitatively demonstrate that spiro-OMeTAD layers indeed passivate the contact toward recombination, but that larger improvements in the open-circuit voltage, a key cell metric, can come not only from this but also from increasing the asymmetry of the collection of electrons in the system. Further, operando measurements show transient changes in the properties of spiro-OMeTAD which suggest that it contributes to hysteresis phenomena commonly observed in perovskite and other solar cells.

36 MATERIALS SCIENCE↗
DOE OSTI2024

A contactless in situ EFISH method for measuring electrostatic potential profile of semiconductor/electrolyte junctions

In photoelectrochemical cells, promising devices for directly converting solar energy into storable chemical fuels, the spatial variation of the electrostatic potential across the semiconductor–electrolyte junction is the key parameter that determines the cell performance. In principle, electric field induced second harmonic generation (EFISH) provides a contactless in situ spectroscopic tool to measure the spatial variation of electrostatic potential. However, the total second harmonic generation (SHG) signal contains the contributions of the EFISH signals of semiconductor space charge layer and the electric double layer, in addition to the SHG signal of the electrode surface. The interference of these complex quantities hinders their analysis. In this work, to understand and deconvolute their contributions to the total SHG signals, bias-dependent SHG measurements are performed on the rutile TiO2(100)–electrolyte junction as a function of light polarization and crystal azimuthal angle (angle of the incident plane relative to the crystal [001] axis). A quadratic response between SHG intensity and the applied potential is observed in both the accumulation and depletion regions of TiO2. The relative phase difference and amplitude ratio are extracted at selected azimuthal angles and light polarizations. At 0° azimuthal angle and s-in–p-out polarization, the SHG intensity minimum has the best match with the TiO2 flatband potential due to the orthogonal relative phase difference between bias-dependent and bias-independent SHG terms. We further measure the pH-dependent flatband potential and probe the photovoltage under open circuit conditions using the EFISH technique, demonstrating the capability of this contactless method for measuring electrostatic potential at semiconductor–electrolyte junctions.

Chemistry↗
DOE OSTI2022

Halogen Redox Shuttle Explains Voltage-Induced Halide Redistribution in Mixed-Halide Perovskite Devices

Voltage-induced halide segregation greatly limits the optoelectronic applications of mixed-halide perovskite devices, but a mechanistic explanation behind this phenomenon remains unclear. In this work, we use electron microscopy and elemental mapping to directly measure the halide redistribution in mixed-halide perovskite solar cells with quasi-ion-impermeable contact layers under different bias polarities to find iodide and bromide accumulation at the cathode and anode, respectively. This is consistent with a mechanism based on preferential iodide oxidation at the anode, leading to unbalanced I$^{+}_{i}$, I$^{-}_{X}$, and Br$^{-}_{X}$ fluxes. Importantly, switching the anode from "inert" Au to "active" Ag prevents segregation because Ag oxidation precludes the oxidation of lattice iodide, which suggests employing redox-active additives as a general strategy to suppress halide segregation. Finally, these results show that halide perovskite devices operate as solid-state electrochemical cells when threshold voltages are exceeded, providing fresh insight to understand the impacts of voltage bias on halide perovskite devices.

14 SOLAR ENERGY↗
DOE OSTI2022

Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-Based solar cells

III-nitride InGaN material is an ideal candidate for the fabrication of high performance photovoltaic (PV) solar cells, especially for high-temperature applications. Over the past decade, significant efforts have been made to improve the PV performance of InGaN-based solar cells. In this paper, we perform a comprehensive review of the recent developments in InGaN-based solar cells. The topics of discussion include theoretical modeling, material epitaxy, device engineering, and high-temperature measurement. Particularly, we highlight subjects such as substrate technology, and properties that are unique to InGaN materials such as polarization control and their positive thermal coefficient. To date, outstanding high-temperature InGaN-based solar cells with quantum efficiency approaching 80% at 450 °C have been demonstrated. In conclusion, future innovations in epitaxy science, device engineering, and integration methods are required to further advance the efficiency and expand the applications of InGaN-based solar cells.

14 SOLAR ENERGY↗
DOE OSTI2026

Understanding Recombination Pathways of CdSeTe/CdTe Devices Using Temperature Dependence of Fill Factor

Understanding the temperature dependence of photovoltaic parameters is critical for identifying performance limiting mechanisms in CdTe-based solar cells. In this study, we investigate the temperature dependence of fill factor (FF(T)) in CdSeTe/CdTe solar cells using a combination of experimental current density-voltage (JV) measurements and numerical simulations. The measured FF(T) exhibits a nonlinear response with temperature, peaking at moderate temperature values (10–30°C). Through numerical modeling, we reveal that this peaking behavior in FF(T) arises when the dominant recombination mechanism transitions from bulk to interface with increasing temperature. This transition is primarily driven by low hole mobility (0.6–1.2 cm2/V·s), while electron mobility, interface recombination velocities, and carrier lifetime also contribute to the effect. Our findings demonstrate that FF(T) analysis is a promising diagnostic tool for distinguishing recombination pathways and guiding the optimization of thin-film CdTe solar cells under real-world conditions.

CdTe photovoltaics↗
DOE OSTI2021

Spectral Effects in Albedo and Rearside Irradiance Measurement for Bifacial Performance Estimation

We investigate the impact of spectral dependence of ground surface reflectivity on albedo and rearside irradiance measurements necessary for bifacial photovoltaic (PV) module performance estimation and monitoring. Because PV modules are spectrally selective, albedo and irradiance measurements performed with common irradiance sensors may require spectral mismatch corrections when used for performance prediction. We investigate via simulation the differences in spectrally responsive albedo measured with thermopile pyranometers and crystalline silicon PV reference cells in comparison to a typical crystalline-silicon bifacial PV module. Simulations are performed for nine different representative ground surface materials using simulated solar spectra together with spectral reflectivity data distributed with the SMARTS simulation software. For the materials considered, the results show that albedo spectral mismatch relative to the bifacial module is distributed over a range of ±9.2% for thermopile pyranometers versus only ±3.7% for a typical PV reference cell. We consider the impact of this spectrally-responsive albedo mismatch on bifacial PV module rearside irradiance measurements. Using synthesized rearside spectral irradiance distributions, we find that for the nine different ground surface materials the predicted rearside irradiance measurement deviates from the effective irradiance observed by the PV module by on the order of 16.5 W/m 2 for the pyranometer and 3.6 W/m 2 for the PV reference cell. We discuss the implications for bifacial albedo and irradiance measurement.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Emerging inorganic solar cell efficiency tables (version 2)

Abstract This paper presents the second version of the efficiency tables of materials considered as emerging inorganic absorbers for photovoltaic solar cell technologies. The materials collected in these tables are selected based on their progress in recent years, and their demonstrated potential as future photovoltaic absorbers. The first part of the paper consists of the guidelines for the inclusion of the different technologies in this paper, the verification means used by the authors, and recommendation for measurement best practices. The second part details the highest world-class certified solar cell efficiencies, and the highest non-certified cases (some independently confirmed). The third part highlights the new entries including the record efficiencies, as well as new materials included in this version of the tables. The final part is dedicated to review a specific aspect of materials research that the authors consider of high relevance for the scientific community. In this version of the efficiency tables, we are including an overview of the latest progress in quasi one-dimensional absorbers, such as antimony chalcogenides, for photovoltaic applications.

14 SOLAR ENERGY↗
DOE OSTI2022

Translating Material-Level Characterization of Carbon-Nanotube-Reinforced Composite Gridlines to Module-Level Degradation

Cell cracks in PV modules caused by poor handling during shipping and installation as well as from extreme weather events can lead to gradual or immediate power degradation. To directly address cell-crack-induced degradation, we have formulated a carbon nanotube additive for commercial screen printed silver pastes. We have shown in previous work that these metal matrix composites have little to no effect on the cell's efficiency while enhancing the metallization's fracture toughness and electrical gap-bridging capability. In this work, we focus on translating materials level characterization techniques to module level degradation. We found that we get conflicting results from two different methods of measuring the metallization's ability to electrically bridge gaps in cracked solar cells. Mini-module stress testing is currently underway to determine which materials characterization correlates well with the min-module degradation characteristics.

carbon nanotubes↗