SEMIANNUAL STATUS REPORT NO. 1 <TO THE< NATIONAL AERONAUTICS AND SPACE ADMINISTRATION, MAR. 1 - SEPT. 1, 1962 <AN ADAPTIVE MODEL FOR NONLINEAR PROCESS IDENTIFICATION<
Adaptive model for nonlinear process identification
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Adaptive model for nonlinear process identification
Starfish project - nuclear explosion - artificial radiation belt
In this report are presented detailed technical summaries of the effort accomplished on Phase II of the Orbit Determination Program for the period July 22 to October 22, 1963, inclusive. Efforts carried out under Phase I which are applicable to the precision version of the Program are reported here as well.
Molecular evolution in protobiological systems - catalysts and catalytic activity in intermediate systems formed during synthesis of low molecular weight organic compounds
Physiological data and instrument development for automatic measurement of hemodynamic and metabolic parameters on primates during weightlessness
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Spectroscopic instruments for vacuum ultraviolet radiation study
High energy molecular beam apparatus and optical lever for measurement of momentum and energy accommodation coefficients under satellite conditions
Current distribution measurements in micro-fissure electrodes - dynamic behavior of porous electrode systems
Space related research on cosmic rays, astrophysics, interplanetary magnetic fields, infrared astronomy, planetary spectroscopy, and instrument development
Chemical analysis of rock and meteorite samples for hydrocarbon content
Differential reflectivity concept use in determining scattered electromagnetic radiation from lunar surface
Environmental effects on electric properties of n-p-n silicon transistors
Plant leaves for oxygen production in closed ecological system
Human dynamic space orientation using control theory techniques - human engineering
Properties and phase diagrams of magnesium binary systems, thermal diffusion of refractory metals, plasma physics, sodium-potassium seeded argon plasma, and convection electrolysis transients
Effects of fast electron irradiation on silicon semiconductors