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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Strain Gauge Balance Uncertainty Analysis at NASA Langley: A Technical Review

This paper describes a method to determine the uncertainties of measured forces and moments from multi-component force balances used in wind tunnel tests. A multivariate regression technique is first employed to estimate the uncertainties of the six balance sensitivities and 156 interaction coefficients derived from established balance calibration procedures. These uncertainties are then employed to calculate the uncertainties of force-moment values computed from observed balance output readings obtained during tests. Confidence and prediction intervals are obtained for each computed force and moment as functions of the actual measurands. Techniques are discussed for separate estimation of balance bias and precision uncertainties.

John S Tripp↗
NASA NTRS1999

Strain Gauge Balance Calibration and Data Reduction at NASA Langley Research Center

This paper will cover the standard force balance calibration and data reduction techniques used at Langley Research Center. It will cover balance axes definition, balance type, calibration instrumentation, traceability of standards to NIST, calibration loading procedures, balance calibration mathematical model, calibration data reduction techniques, balance accuracy reporting, and calibration frequency.

Ferris, A. T. Judy↗
DOE OSTI2023

Device architectures having engineered stresses

The present disclosure relates to a method that includes depositing a spalling layer onto a surface that includes a substrate, depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack, and dividing the stack substantially at a plane positioned within the spalling layer to form a first portion that includes the substrate and a second portion that includes the PV device, where the spalling layer includes a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress, the first layer and the second layer form an interface, the dividing occurs as result of the interface, and the compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.

Steiner, Myles Aaron↗
NASA NTRS1996

Dynamic Stability Instrumentation System (DSIS): User Manual - Volume 3

The paper is an operating manual for the Dynamic Stability Instrumentation System in specific NASA Langley wind tunnels. The instrumentation system performs either a synchronous demodulation or a Fast Fourier Transform on dynamic balance strain gage signals, and ultimately computes aerodynamic coefficients. The dynamic balance converts sting motor rotation into pitch or yaw plane or roll axis oscillation, with timing information provided by a shaft encoder. Additional instruments control model attitude and balance temperature and monitor sting vibrations. Other instruments perform self-calibration and diagnostics. Procedures for conducting calibrations and wind-off and wind-on tests are listed.

Daniels, Taumi S.↗
NASA NTRS1994

Dynamic Stability Instrumentation System (DSIS). Volume 1: Hardware description

This paper is a hardware description manual for the Dynamic Stability Instrumentation System that is used in specific NASA Langley wind tunnels. The instrumentation system performs either a synchronous demodulation or a fast Fourier transform on dynamic balance strain gage signals, and ultimately computes aerodynamic coefficients. The DSIS consists of a double rack of instruments, a remote motor-generator set, two special stings each with motor driven shafts, and specially designed balances. The major components in the instrumentation rack include a personal computer, digital signal processor microcomputers, computer-controlled signal conditioners, function generator, digital multimeter, and an optional fast Fourier transform analyzer.

Jordan, T. L.↗
DOE OSTI2026

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)

Germanium–tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challenging due to strain-induced defect formation. In this study, we investigate the role of film thickness on strain-induced relaxation, defect density, and Sn segregation. A series of five samples with varying thicknesses and ∼15% Sn-containing GeSn layers were grown, ranging from the critical thickness for strain relaxation to the onset of Sn segregation. All GeSn samples were analyzed using X-ray diffraction reciprocal space mapping (XRD-RSM) to explore the evolution of strain-induced relaxation as a function of thickness. Photoluminescence measurements reveal that increasing the GeSn thickness enhances strain relaxation while reducing defect-related emission, indicating a decrease in effective defect density prior to reaching the threshold thickness of GeSn layer. At a thickness of ∼150 nm, the GeSn layer shows the onset of Sn segregation, evident in the XRD-RSM spectrum, marking the threshold thickness for Sn segregation. This work defines an effective growth window in terms of thickness (35 to 150 nm) for fabricating relaxed, defect-suppressed GeSn layers with 15% Sn content. These findings emphasize the crucial role of thickness control in balancing strain relaxation and defect suppression, advancing the fabrication of high-quality, high Sn-content relaxed GeSn using molecular beam epitaxy.

Defects↗
DOE OSTI2022

Phase-field modeling of crack growth and mitigation in solid oxide cells

Fracture and crack growth is one of the main degradation mechanisms in solid oxide cells (SOCs). However, the modeling of crack growth in SOCs is challenging due to their complex microstructures and possible plasticity development within the Ni particles in Ni-based SOC electrodes. In this study, a phase-field fracture model is developed, which incorporates the SOC microstructures and phase-dependent material properties, including yield strength, fracture toughness in the bulk and at the interphase boundaries. The model is employed to study crack initiation and growth under thermal and redox cycling on the hydrogen electrode side of SOCs. The simulation results demonstrate that under thermal cycling, work-zone cracking dominates in electrolyte-supported SOCs with cracks initiated at the triple-phase boundaries, while only minor mechanical degradation occurs in hydrogen-electrode-supported SOCs after hundreds of thermal cycles. Under redox cycling, through-cracking of yttria-stabilized zirconia (YSZ) in the hydrogen electrode and electrolyte layers dominates. Finally, the simulation results suggest several crack-mitigation strategies, including decreasing the porosity in the hydrogen electrode support layer and synchronizing thermal strain to balance oxidation strain.

08 HYDROGEN↗
DOE OSTI2022

Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices

Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use GaAs as a middle cell because of its near-perfect material quality, despite its bandgap being higher than optimal for the global spectrum. Here, we modify the middle cell bandgap using thick GaInAs/GaAsP strain-balanced quantum well (QW) solar cells with excellent voltage and absorption. Additionally, these high-performance QWs are incorporated into a triple-junction inverted metamorphic multijunction device consisting of a GaInP top cell, GaInAs/GaAsP QW middle cell, and lattice-mismatched GaInAs bottom cell, each of which has been highly optimized. We demonstrate triple-junction efficiencies of 39.5% and 34.2% under the AM1.5 global and AM0 space spectra, respectively, and the global efficiency is higher than previous record six-junction devices.

14 SOLAR ENERGY↗
DOE OSTI2021

Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices

Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells

The carrier extraction and transport mechanisms as well as the relative contributions of radiative and non-radiative recombination processes are investigated in high-quality strain-balanced GaInAs/GaAsP multi-quantum well solar cells recently implemented in record efficiency multijunction solar cells. A comprehensive suite of complementary characterization techniques including temperature- and suns-dependent photoluminescence and photovoltaic measurements are employed to analyze thermal escape and tunneling rates, which demonstrate the need to move beyond simple drift-diffusion models of p–n junctions. This study examines the processes that best characterize the operation of these devices across varying temperatures using a simple two-diode model, incorporating multiple transport protocols, and provides insights into the performance-limiting processes and pathways for their optimization.

14 SOLAR ENERGY↗
DOE OSTI2021

Design and Demonstration of AlxIn1-xP Multiple Quantum Well Light-Emitting Diodes

Direct bandgap AlxIn1-xP alloys offer an advantage for red and amber light-emitting diode (LED) operation over conventional (AlxGa1-x)0.5In0.5P alloys due to their higher direct bandgap energies. However, the coupled variation of its bandgap energy and lattice constant present challenges for fabricating quantum well-based LED devices on GaAs substrates. Here, we present the design and demonstration of AlxIn1-xP red and amber LEDs incorporating multiple quantum well structures. Strain balancing the quantum well layers and manipulating the AlxIn1-xP conduction band energy through control of spontaneous atomic ordering produce structures with higher electron confinement barriers than comparable (AlxGa1-x)0.5In0.5P LEDs. We also discuss future improvements that must be made to realize high efficiency red and amber LEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

SolAero 2020: III-V Metamorphic Graded Buffers (CRADA Final Report)

The effort by the National Renewable Energy Laboratory (NREL) for SolAero Technologies Corp (SolAero) will involve helping with four tasks: 1) Supporting the development, characterization, and optimization of metamorphic grades in III-V multi-junction solar cells, 2) Doping of III-V semiconductor materials and junctions, and 3) Incorporating strain balanced layers into solar cells, and 4) high efficiency germanium based solar cells.

14 SOLAR ENERGY↗
NASA NTRS2012

Barrier infrared detector

A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be "chirped" (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.

Ting, David Z.↗
DOE OSTI2022

Triple-Junction III-V Solar Cells with 39.5% AM1.5G and 34.2% AM0 Efficiencies

III-V multijunction solar cells have the highest efficiencies of any PV technology. These devices are currently the dominant space PV technology, and are being investigated for a wide range of other applications where efficiency is a key metric. In this presentation, we describe a 3-junction cell with the highest 1-sun efficiency to date: 39.5% under the global spectrum, which is higher than previous 6-junction devices. When tuned for the space spectrum, the cell achieves 34.2% beginning-of-life efficiency, without consideration for radiation hardness. These efficiency improvements are enabled by combining advances in device architectures and extended-defect control strategies. This latest 3-junction device includes a high-performance front-junction GaInP top cell, an optically-thick strain-balanced quantum well middle cell, and a lattice-mismatched GaInAs bottom cell with record performance despite dislocations. These advances not only allow high efficiency photovoltaics for both space and terrestrial PV applications, but also help enable new applications of III-V materials.

GaInAs↗
NASA NTRS1965

Residual stresses in 17-4 PH steel

Effects of heat treatment on residual stress of 17-4 PH steel, and influence of stress on dimensional integrity of strain gauge balances

STEEL↗
NASA NTRS1990

Analysis of a six-component, flow-through, strain-gage, force balance used for hypersonic wind tunnel models with scramjet exhaust flow simulation

The thermal effects of simulant gas injection and aerodynamic heating at the model's surface on the measurements of a non-watercooled, flow through balance were investigated. A stainless steel model of a hypersonic air breathing propulsion cruise missile concept (HAPCM-50) was used to evaluate this balance. The tests were conducted in the 20-inch Mach 6 wind tunnel at NASA-Langley. The balance thermal effects were evaluated at freestream Reynolds numbers ranging from .5 to 7 x 10(exp 6) ft and angles of attack between -3.5 to 5 deg at Mach 6. The injection gases considered included cold air, hot air, and a mixture of 50 percent Argon and 50 percent Freon-12. The stagnation temperatures of the cold air, hot air, and Ar-Fr(12) reached 111, 214, and 283 F, respectively within the balance. A bakelite sleeve was inserted into the inner tube of the balance to minimize the thermal effects of these injection gases. Throughout the tests, the normal force, side force, yaw moment, roll moment, and pitching moment balance measurements were unaffected by the balance thermal effects of the injection gases and the wind tunnel flow. However, the axial force (AF) measurement was significantly affected by balance heating. The average zero shifts in the AF measurements were 1.9, 3.8, and 5.9 percent for cold air, hot air, and Ar-Fr(12) injection, respectively. The AF measurements decreased throughout these tests which lasted from 70 to 110 seconds. During the cold air injection tests, the AF measurements were accurate up to at least ten seconds after the model was injected into the wind tunnel test section. For the hot air and Ar-Fr(12) tests, the AF measurements were accurate up to at least five seconds after model injection.

Kniskern, Marc W.↗
NASA NTRS2018

Regression Analysis and Calibration Recommendations for the Characterization of Balance Temperature Effects

Analysis and use of temperature-dependent wind tunnel strain-gage balance calibration data are discussed in the paper. First, three different methods are presented and compared that may be used to process temperature-dependent strain-gage balance data. The first method uses an extended set of independent variables in order to process the data and predict balance loads. The second method applies an extended load iteration equation during the analysis of balance calibration data. The third method uses temperature-dependent sensitivities for the data analysis. Physical interpretations of the most important temperature-dependent regression model terms are provided that relate temperature compensation imperfections and the temperature-dependent nature of the gage factor to sets of regression model terms. Finally, balance calibration recommendations are listed so that temperature-dependent calibration data can be obtained and successfully processed using the reviewed analysis methods.

wind tunnel test↗