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At least 73 records · Page 4

Structural Distortion Induced by Manganese Activation in a Lithium-Rich Layered Cathode

The search for batteries with high energy density has highlighted lithium-rich manganese-based layered oxides due to their exceptionally high capacity. Although it is clear that both cationic and anionic redox are present in the charge compensation mechanism, the microstructural evolution of the Li 2 MnO 3 -like phase during anionic redox and its role in battery performance and structural stability are still not fully understood. Here, we systematically probe microstructural evolution using spatially resolved synchrotron X-ray measurements and reveal an underlying interaction between the Li 2 MnO 3 -like domains and bulk rhombohedral structure. Mn ion activation and a previously unobserved structural distortion are discovered at high voltages, and can be related to structural strain present in the Li 2 MnO 3 -like phase upon substantial lithium ion extraction. Moreover, we elucidate a correlation between this structural distortion and irreversible phase transitions by thermally perturbing delithiated samples. These insights highlight a pathway toward achieving high capacity cathode materials required for future commercial applications.

36 MATERIALS SCIENCE↗

Design and Demonstration of AlxIn1-xP Multiple Quantum Well Light-Emitting Diodes

Direct bandgap AlxIn1-xP alloys offer an advantage for red and amber light-emitting diode (LED) operation over conventional (AlxGa1-x)0.5In0.5P alloys due to their higher direct bandgap energies. However, the coupled variation of its bandgap energy and lattice constant present challenges for fabricating quantum well-based LED devices on GaAs substrates. Here, we present the design and demonstration of AlxIn1-xP red and amber LEDs incorporating multiple quantum well structures. Strain balancing the quantum well layers and manipulating the AlxIn1-xP conduction band energy through control of spontaneous atomic ordering produce structures with higher electron confinement barriers than comparable (AlxGa1-x)0.5In0.5P LEDs. We also discuss future improvements that must be made to realize high efficiency red and amber LEDs.

36 MATERIALS SCIENCE↗

Realizing High Capacity and Zero Strain in Layered Oxide Cathodes via Lithium Dual-Site Substitution for Sodium-Ion Batteries

Sodium-ion batteries have garnered unprecedented attention as an electrochemical energy storage technology, but it remains challenging to design high-energy-density cathode materials with low structural strain during the dynamic (de)sodiation processes. In this paper, we report a P2-layered lithium dual-site-substituted Na 0.7 Li 0.03 [Mg 0.15 Li 0.07 Mn 0.75 ]O 2 (NMLMO) cathode material, in which Li ions occupy both transition-metal (TM) and alkali-metal (AM) sites. The combination of theoretical calculations and experimental characterizations reveals that Li TM creates Na–O–Li electronic configurations to boost the capacity derived from the oxygen anionic redox, while Li AM serves as LiO 6 prismatic pillars to stabilize the layered structure through suppressing the detrimental phase transitions. As a result, NMLMO delivers a high specific capacity of 266 mAh g –1 and simultaneously exhibits the nearly zero-strain characteristic within a wide voltage range of 1.5–4.6 V. Our findings highlight the effective way of dual-site substitution to break the capacity–stability trade-off in cathode materials for advanced rechargeable batteries.

25 ENERGY STORAGE↗

Mineralogical and chemical characterization of iron-, manganese-, and copper-containing synthetic hydroxyapatites

The National Aeronautics and Space Administration's (NASA) Advanced Life Support (ALS) Program is evaluating the use of Fe-, Mn-, and Cu-containing synthetic hydroxyapatite (SHA) as a slow release fertilizer for crops that might be grown on the International Space Station or at Lunar and Martian outposts. Separate Fe-, Mn-, and Cu-containing SHA materials along with a transition-metal free SHA (pure-SHA) were synthesized using a precipitation method. Chemical and mineralogical analyses determined if and how Fe, Mn, and Cu were incorporated into the SHA structure. X-ray diffraction (XRD), Rietveld refinement, and transmission electron microscopy (TEM) confirmed that SHA materials with the apatite structure were produced. Chemical analyses indicated that the metal containing SHA materials were deficient in Ca relative to pure-SHA. The shift in the infrared PO4-mu 3 vibrations, smaller unit cell parameters, smaller particle size, and greater structural strain for Fe-, Mn-, and Cu-containing SHA compared with pure-SHA suggested that Fe, Mn, and Cu were incorporated into SHA structure. Rietveld analyses revealed that Fe, Mn, and Cu substituted into the Ca2 site of SHA. An Fe-rich phase was detected by TEM analyses and backscattered electron microscopy in the Fe-containing SHA material with the greatest Fe content. The substitution of metals into SHA suggests that metal-SHA materials are potential slow-release sources of micronutrients for plant uptake in addition to Ca and P.

NASA Center JSC↗

Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium

Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.

36 MATERIALS SCIENCE↗

High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis

High-pressure and time-resolved studies of the optical emission from n-type doped GaN/AlN multi-quantum-wells (MQWs) with various well thicknesses are analysed in comparison with ab initio calculations of the electronic (band structure, density of states) and optical (emission energies and their pressure derivatives, oscillator strength) properties. The optical properties of GaN/AlN MQWs are strongly affected by quantum confinement and polarization-induced electric fields. Thus, the photoluminescence (PL) peak energy decreases by over 1 eV with quantum well (QW) thicknesses increasing from 1 to 6 nm. Furthermore, the respective PL decay times increased from about 1 ns up to 10 μs, due to the strong built-in electric field. It was also shown that the band gap pressure coefficients are significantly reduced in MQWs as compared to bulk AlN and GaN crystals. Such coefficients are strongly dependent on the geometric factors such as the thickness of the wells and barriers. The transition energies, their oscillator strength, and pressure dependence are modeled for tetragonally strained structures of the same geometry using a full tensorial representation of the strain in the MQWs under external pressure. These MQWs were simulated directly using density functional theory calculations, taking into account two different systems: the semi-insulating QWs and the n-doped QWs with the same charge density as in the experimental samples. Such an approach allowed an assessment of the impact of n-type doping on optical properties of GaN/AlN MQWs. We find a good agreement between these two approaches and between theory and experimental results. We can therefore confirm that the nonlinear effects induced by the tetragonal strain related to the lattice mismatch between the substrates and the polar MQWs are responsible for the drastic decrease of the pressure coefficients observed experimentally.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Dealloying in Individual Nanoparticles and Thin Film Grains: A Bragg Coherent Diffractive Imaging Study

Dealloying is a process whereby selective dissolution results in a porous, strained structure often with new properties. The process is of both intrinsic and applied interest, and recently has been used to make highly active catalysts. The porosity has been studied using electron microscopy while the dealloying-induced strain has been studied at the ensemble level using X-ray diffraction. Despite the importance of local, for example, at the individual particle or grain level, strain in controlling the properties of the dealloyed material, it remains unresolved due to the difficulty of imaging 3D strain distributions with nanometer resolution in reactive environments. This information could play an integral role in understanding and controlling lattice strain for a variety of applications. Here, 3D strain distributions in individual nanoparticles and thin film grains in silver-gold alloys undergoing nitric acid-induced dealloying are imaged by Bragg coherent diffractive imaging. Particles exhibit dramatic changes in their local strains due to dealloying but grains do not. Furthermore, the average lattice in both grains and particles contracts during dealloying. In general, the results reveal significant dealloying-induced strain heterogeneity at the nanoscale in both isolated and extended samples, which may be utilized to develop advanced nanostructures for a variety of important applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Thermal insulation attaching means

An improved isolation system is provided for attaching ceramic tiles of insulating material to the surface of a structure to be protected against extreme temperatures of the nature expected to be encountered by the space shuttle orbiter. This system isolates the fragile ceramic tiles from thermally and mechanically induced vehicle structural strains. The insulating tiles are affixed to a felt isolation pad formed of closely arranged and randomly oriented fibers by means of a flexible adhesive and in turn the felt pad is affixed to the metallic vehicle structure by an additional layer of flexible adhesive.

Leger, L. J.↗

Suppression and Structure of Low Strain Rate Nonpremixed Flames

The agent concentration required to achieve suppression of low strain rate nonpremixed flames is an important fire safety consideration. In a microgravity environment such as a space platform, unwanted fires will likely occur in near quiescent conditions where strain rates are very low. Diffusion flames typically become more robust as the strain rate is decreased. When designing a fire suppression system for worst-case conditions, low strain rates should be considered. The objective of this study is to investigate the impact of radiative emission, flame strain, agent addition, and buoyancy on the structure and extinction of low strain rate nonpremixed flames through measurements and comparison with flame simulations. The suppression effectiveness of a suppressant (N2) added to the fuel stream of low strain rate methane-air diffusion flames was measured. Flame temperature measurements were attained in the high temperature region of the flame (T greater than 1200 K) by measurement of thin filament emission intensity. The time varying temperature was measured and simulated as the flame made the transition from normal to microgravity conditions and as the flame extinguished.

Hamins, Anthony↗

Ba{sub 2}TeO: A new layered oxytelluride

Single crystals of the new semiconducting oxytelluride phase, Ba{sub 2}TeO, were synthesized from barium oxide powder and elemental tellurium in a molten barium metal flux. Ba{sub 2}TeO crystallizes in tetragonal symmetry with space group P4/nmm (#129), a=5.0337(1) Å, c=9.9437(4) Å, Z=2. The crystals were characterized by single crystal x-ray diffraction, heat capacity and optical measurements. The optical measurements along with electronic band structure calculations indicate semiconductor behavior with a band gap of 2.93 eV. Resistivity measurements show that Ba{sub 2}TeO is highly insulating. - Graphical abstract: Starting from a simple stacking of rocksalt layers, the final structure of Ba{sub 2}TeO can be obtained by accommodation of structural strain via atom displacements. Density of states calculations and optical absorbance measurements show that Ba{sub 2}TeO has a band gap of 2.93 eV, indicative of semiconductor behavior. - Highlights: • Single crystal synthesis of a new layered oxytelluride, Ba{sub 2}TeO. • The structure features inverse PbO-type BaO layers and NaCl-type BaTe layers. • Optical absorbance show Ba{sub 2}TeO to be a semiconductor with a 2.93 eV gap. • Density of states indicate a small hybridization between Te 5p and Ba 5d states. • The BaTe (BaO) layers dominate the heat capacity at low (high) temperatures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Structure, defects, and strain in silicon-silicon oxide interfaces

The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural evolution and strain induced mixing in Cu–Co composites studied by transmission electron microscopy and atom probe tomography

A Cu–Co composite material is chosen as a model system to study structural evolution and phase formations during severe plastic deformation. The evolving microstructures as a function of the applied strain were characterized at the micro-, nano-, and atomic scale-levels by combining scanning electron microscopy and transmission electron microscopy including energy-filtered transmission electron microscopy and electron energy-loss spectroscopy. The amount of intermixing between the two phases at different strains was examined at the atomic scale using atom probe tomography as complimentary method. It is shown that Co particles are dissolved in the Cu matrix during severe plastic deformation to a remarkable extent and their size, number, and volume fraction were quantitatively determined during the deformation process. From the results, it can be concluded that supersaturated solid solutions up to 26 at.% Co in a fcc Cu–26 at.% Co alloy are obtained during deformation. However, the distribution of Co was found to be inhomogeneous even at the highest degree of investigated strain. - Highlights: • Structural evolution in a deformed Cu–Co composite is studied on all length scales. • Amount of intermixing is examined by atom-probe tomography. • Supersaturated solid solutions up to 26 at.% Co in Cu are observed.

36 MATERIALS SCIENCE↗

Epitaxial Templating of Two-Dimensional Metal Chloride Nanocrystals on Monolayer Molybdenum Disulfide

We demonstrate the formation of ionic metal chloride (CuCl) two-dimensional (2D) nanocrystals epitaxially templated on the surface of monolayer molybdenum disulfide (MoS 2 ). These 2D CuCl nanocrystals are single atomic planes from a nonlayered bulk CuCl structure. They are stabilized as a 2D monolayer on the surface of the MoS 2 through interactions with the uniform periodic surface of the MoS 2 . The heterostructure 2D system is studied at the atomic level using aberration-corrected transmission electron microscopy at 80 kV. Dynamics of discrete rotations of the CuCl nanocrystals are observed, maintaining two types of preferential alignments to the MoS 2 lattice, confirming that the strong interlayer interactions drive the stable CuCl structure. Strain maps are produced from displacement maps and used to track real-time variations of local atomic bonding and defect production. Density functional theory calculations interpret the formation of two types of energetically advantageous commensurate superlattices via strong chemical bonds at interfaces and predict their corresponding electronic structures. These results show how vertical heterostructured 2D nanoscale systems can be formed beyond the simple assembly of preformed layered materials and provide indications about how different 2D components and their interfacial coupling mode could influence the overall property of the heterostructures.

36 MATERIALS SCIENCE↗

Simultaneous bright- and dark-field X-ray microscopy at X-ray free electron lasers

Abstract The structures, strain fields, and defect distributions in solid materials underlie the mechanical and physical properties across numerous applications. Many modern microstructural microscopy tools characterize crystal grains, domains and defects required to map lattice distortions or deformation, but are limited to studies of the (near) surface. Generally speaking, such tools cannot probe the structural dynamics in a way that is representative of bulk behavior. Synchrotron X-ray diffraction based imaging has long mapped the deeply embedded structural elements, and with enhanced resolution, dark field X-ray microscopy (DFXM) can now map those features with the requisite nm-resolution. However, these techniques still suffer from the required integration times due to limitations from the source and optics. This work extends DFXM to X-ray free electron lasers, showing how the $$10^{12}$$ 10 12 photons per pulse available at these sources offer structural characterization down to 100 fs resolution (orders of magnitude faster than current synchrotron images). We introduce the XFEL DFXM setup with simultaneous bright field microscopy to probe density changes within the same volume. This work presents a comprehensive guide to the multi-modal ultrafast high-resolution X-ray microscope that we constructed and tested at two XFELs, and shows initial data demonstrating two timing strategies to study associated reversible or irreversible lattice dynamics.

47 OTHER INSTRUMENTATION↗