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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Preparation of polymeric diacetylene thin films for nonlinear optical applications

A method for producing polymeric diacetylene thin films having desirable nonlinear optical characteristics has been achieved by producing amorphous diacetylene polymeric films by simultaneous polymerization of diacetylene monomers in solution and deposition of polymerized diacetylenes on to the surface of a transparent substrate through which ultraviolet light has been transmitted. These amorphous polydiacetylene films produced by photo-deposition from solution possess very high optical quality and exhibit large third order nonlinear optical susceptibilities, such properties being suitable for nonlinear optical devices such as waveguides and integrated optics.

Frazier, Donald O.↗
NASA NTRS1984

Amorphous metallic films in silicon metallization systems

The general objective was to determine the potential of amorphous metallic thin films as a means of improving the stability of metallic contacts to a silicon substrate. The specific objective pursued was to determine the role of nitrogen in the formation and the resulting properties of amorphous thin-film diffusion barriers. Amorphous metallic films are attractive as diffusion barriers because of the low atomic diffusivity in these materials. Previous investigations revealed that in meeting this condition alone, good diffusion barriers are not necessarily obtained, because amorphous films can react with an adjacent medium (e.g., Si, Al) before they recrystallize. In the case of a silicon single-crystalline substrate, correlation exists between the temperature at which an amorphous metallic binary thin film reacts and the temperatures at which the films made of the same two metallic elements react individually. Amorphous binary films made of Zr and W were investigated. Both react with Si individually only at elevated temperatures. It was confirmed that such films react with Si only above 700 C when annealed in vacuum for 30 min. Amorphous W-N films were also investigated. They are more stable as barriers between Al and Si than polycrystalline W. Nitrogen effectively prevents the W-Al reaction that sets in at 500 C with polycrystalline W.

Nicolet, M. A.↗
NASA NTRS1982

Ion beam deposition of amorphous carbon films with diamond like properties

Carbon films were deposited on silicon, quartz, and potassium bromide substrates from an ion beam. Growth rates were approximately 0.3 micron/hour. The films were featureless and amorphous and contained only carbon and hydrogen in significant amounts. The density and carbon/hydrogen ratio indicate the film is a hydrogen deficient polymer. One possible structure, consistent with the data, is a random network of methylene linkages and tetrahedrally coordinated carbon atoms.

Angus, John C.↗
NASA NTRS1984

Coaxial carbon plasma gun deposition of amorphous carbon films

A unique plasma gun employing coaxial carbon electrodes was used in an attempt to deposit thin films of amorphous diamond-like carbon. A number of different structural, compositional, and electrical characterization techniques were used to characterize these films. These included scanning electron microscopy, scanning transmission electron microscopy, X ray diffraction and absorption, spectrographic analysis, energy dispersive spectroscopy, and selected area electron diffraction. Optical absorption and electrical resistivity measurements were also performed. The films were determined to be primarily amorphous, with poor adhesion to fused silica substrates. Many inclusions of particulates were found to be present as well. Analysis of these particulates revealed the presence of trace impurities, such as Fe and Cu, which were also found in the graphite electrode material. The electrodes were the source of these impurities. No evidence of diamond-like crystallite structure was found in any of the film samples. Details of the apparatus, experimental procedure, and film characteristics are presented.

Sater, D. M.↗
NASA NTRS1990

Future mission opportunities and requirements for advanced space photovoltaic energy conversion technology

The variety of potential future missions under consideration by NASA will impose a broad range of requirements on space solar arrays, and mandates the development of new solar cells which can offer a wide range of capabilities to mission planners. Major advances in performance have recently been achieved at several laboratories in a variety of solar cell types. Many of those recent advances are reviewed, the areas are examined where possible improvements are yet to be made, and the requirements are discussed that must be met by advanced solar cell if they are to be used in space. The solar cells of interest include single and multiple junction cells which are fabricated from single crystal, polycrystalline and amorphous materials. Single crystal cells on foreign substrates, thin film single crystal cells on superstrates, and multiple junction cells which are either mechanically stacked, monolithically grown, or hybrid structures incorporating both techniques are discussed. Advanced concentrator array technology for space applications is described, and the status of thin film, flexible solar array blanket technology is reported.

Flood, Dennis J.↗
NASA NTRS2005

Low-cycle Fatigue and Dynamic Fracture in Gold Thin Films on SiN Supported Membranes

This slide presentation focuses on the dynamic mechanical response and fatigue behavior in sub-micron thick Au-films deposited onto amorphous Si(sub X)N(sub y) substrates, with spider-web geometry, that were subjected to forced vibration (3-axis random vibration with 2 kHz roll-off frequency). The work is to advance cyrogenic detectors that can operate at 100mK, that is required to create cryogenic detectors that are to search for present day signatures of the big bang.

fatigue↗
NASA NTRS1976

Solid-state growth of Si to produce planar surfaces

Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control of Si growth using a solid growth medium. Faceted dissolution pits were first produced in a Si substrate using standard photolithographic techniques and Al metallization. Si was then evaporated onto the cold structure, depositing as amorphous material. Upon heating, the amorphous Si migrated through the solid Al and grew rapidly in the faceted pits, typically refilling them flush with the surrounding substrate. Evidence that the rapid growth occurs only while the amorphous Si is dissolving into the Al is presented.

Boatright, R. L.↗
NASA NTRS1995

Probing the structure of cometary ice

Computer simulations of bulk and vapor deposited amorphous ices are presented. The structure of the bulk low density amorphous ice is in good agreement with experiments on pressure disordered amorphous ice. Both the low density bulk ice and the vapor deposited ices exhibit strong ordering. Vapor deposition of hot (300 K) water molecules onto a cold (77 K) substrate yields less porous ices than deposition of cold (77 K) water molecules onto a cold substrate. Both vapor deposited ices are more porous than the bulk amorphous ice. The structure of bulk high density amorphous ice is only in fair agreement with experimental results. Attempts to simulate high density amorphous ice via vapor deposition were not successful. Electron diffraction results on vapor deposited amorphous ice indicate that the temperature of the nucleation of the cubic phase depends upon the amount of time between the deposition and the onset of crystallization, suggesting that freshly deposited ice layers reconstruct on time of the order of hours. The temperature dependence of the microporosity of the vapor deposited amorphous ices might affect laboratory experiments that are aimed at simulating astrophysical ices in the context of the origin of prebiotic organic material and its transport to the Earth.

Wilson, Michael A.↗
NASA NTRS1972

Optical polarimetric properties of the Echo 2 and PAGEOS 1 engineering surfaces

Experimental investigations of the percent polarization of sunlight reflected from the surfaces of each of the Echo 2 Satellite and PAGEOS (Passive Geodetic Earth Orbiting Satellite) were performed to determine the stability of their surfaces in the space environment. The Echo 2 surface material was amorphous phosphate chemically bonded to a rolled aluminum substrate while the PAGEOS 1 surface material is vapor deposited aluminum on a poly (ethylene terephthalate) film. The stability of the satellites' surfaces was analyzed by comparing the light polarizing properties of the satellites, to those of test surfaces representative of the satellites' surfaces. The properties of flat test surfaces were measured experimentally in the laboratory, and the effects of surface strain, surface geometry, and vacuum upon these properties were examined. The laboratory analyses revealed that the polarization properties of the Echo 2 surface were significantly affected by surface geometry and vacuum, and that the properties of the PAGEOS 1 surface were not significantly altered by any of the above mechanisms.

Lee, R. B., III↗
NASA NTRS1990

Optical constants of solid methane

Methane is the most abundant simple organic molecule in the outer solar system bodies. In addition to being a gaseous constituent of the atmospheres of the Jovian planets and Titan, it is present in the solid form as a constituent of icy surfaces such as those of Triton and Pluto, and as cloud condensate in the atmospheres of Titan, Uranus, and Neptune. It is expected in the liquid form as a constituent of the ocean of Titan. Cometary ices also contain solid methane. The optical constants for both solid and liquid phases of CH4 for a wide temperature range are needed for radiative transfer calculations, for studies of reflection from surfaces, and for modeling of emission in the far infrared and microwave regions. The astronomically important visual to near infrared measurements of solid methane optical constants are conspicuously absent from the literature. Preliminary results are presented on the optical constants of solid methane for the 0.4 to 2.6 micrometer region. Deposition onto a substrate at 10 K produces glassy (semi-amorphous) material. Annealing this material at approximately 33 K for approximately 1 hour results in a crystalline material as seen by sharper, more structured bands and negligible background extinction due to scattering. The constant k is reported for both the amorphous and the crystalline (annealed) states. Typical values (at absorption maxima) are in the .001 to .0001 range. Below lambda = 1.1 micrometers the bands are too weak to be detected by transmission through the films less than or equal to 215 micrometers in thickness, employed in the studies to date. Using previously measured values of the real part of the refractive index, n, of liquid methane at 110 K, n is computed for solid methane using the Lorentz-Lorenz relationship. Work is in progress to extend the measurements of optical constants n and k for liquid and solid to both shorter and longer wavelengths, eventually providing a complete optical constants database for condensed CH4.

Khare, Bishun N.↗
NASA NTRS1990

Electron cyclotron resonance deposition of diamond-like films

Electron cyclotron resonance (ECR) microwave plasma CVD has been developed at low pressures (0.0001 - 0.01 torr) and at ambient and high substrate temperatures (up to 750 C), to achieve large-area (greater than 4 in. diameter) depositions of diamondlike amorphous carbon (a - C:H) films. The application of a RF bias to the substrate stage, which induces a negative self-bias voltage, is found to play a critical role in determining carbon bonding configurations and in modifying the film morphology. There are two distinct types of ECR-deposited diamondlike films. One type of diamondlike film exhibits a Raman spectrum consisting of broad and overlapping, graphitic D (1360/cm, line width = 280/cm) and G (1590/cm, line width 140/cm) lines, and the other type has a broad Raman peak centered at appoximately 1500/cm. Examination of plasma species by optical emission spectroscopy shows no correlation between the CH-asterisk emission intensity and the deposition rate of diamondklike films.

Shing, Y. H.↗
NASA NTRS1973

Low-temperature epitaxy of Ge films by sputter deposition.

It is shown experimentally that isoepitaxial growth of Ge films on Ge substrates can be obtained by dc sputtering at substrate temperatures as low as 100 C. The crystallographic structure and orientation of the films are strongly influenced by such deposition parameters as substrate temperature, growth rate, surface contamination, and sputtering-gas purity. The amorphous-polycrystalline transition occurs between 110 and 115 C, while the polycrystalline-single crystalline transition occurs at roughly 140 C. The crystallographic order increases with increasing substrate temperature.

Khan, I. H.↗
NASA NTRS1973

Study for identification of Beneficial Uses of Space (BUS), phase 2. Volume 2: Technical report. Book 2: Section 5, appendices A through D

An investigation of the technology and programmatics involved in the development of four of the products selected as capable of benefitting from space manufacturing was conducted. The four activities selected are as follows: (1) levitation heating and melting of tungsten, (2) free suspension processing of oxides to form amorphous oxide materials, (3) crystals for surface wave acoustic substrates, and (4) space manufacturing of surface acoustic wave devices.

Source record↗
NASA NTRS1985

Spray Application of Rapidly Solidified Metals

Fast and economical process now available. New process applies rapidly solidified (RS) metal coatings to substrates. RS metals made directly from molten material. Have amorphous or microcrystalline structures and yield coatings having superior wear and corrosion resistance. Mixture of RS metal powder and peening particles sprayed from nozzle against surface coated. Powder and peening particles strike surface simultaneously, and impact bonds powder to surface as uniform coating. New process, which employs shot peening, is safe, fast, and inexpensive.

Chu, H. P.↗
NASA NTRS2006

Coating MCPs with AlN and GaN

A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.

Bensaoula, Abdelhakim↗
NASA NTRS1971

Mechanism of the oxidation of titanium disilicide.

Study of the oxidation of TiSi2 at temperatures of 300 to 1300 C. Wafers prepared using the techniques of powder metallurgy had densities of 95 to 98% of the theoretical value. On oxidation at temperatures up to 600 C, the polished wafers formed a protective, titania-silica glass. The rate data indicate a complex surface and diffusion-limited mechanism. Above 600 deg C, the oxide consisted of an amorphous SiO2 film with crystalline islands of TiO2 (rutile). From 1000 to 1300 C, parabolic kinetics with an activation energy of 21.3 kcal/mole were observed. These data are consistent with a model in which the rate-determining step is the diffusion of oxygen through the silica film with the simultaneous diffusion of titanium from the substrate to the islands of rutile growing on top of the amorphous silica.

Schwettmann, F. N.↗