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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

A New Small Nano-Kelvin Resolution Thermometer for Low Temperature Experiments

A small, high resolution paramagnetic susceptibility thermometer was developed using a GdCl3 paramagnetic salt. The device uses a SQUID (Superconducting Quantum Interference Device) magnetometer to determine the temperature dependent magnetization of the salt in a magnetic field. The magnetic field is provided by a pair of small samarium cobalt permanent magnet disks situated inside the thermometer housing. The eliminates the need for a heavy, charging solenoid used in a conventional SQUID based magnetic thermometer system. This thermometer can resolve approximately 10 (exp -9)K near the liquid-gas critical point of He-3(approximately 3.31K). The drift rate of the thermometer was measured to be less than 2 x 10 (exp -13) K per second. This light weight thermometer (approximately 7 g) is a candidate for use in future low temperature Space Shuttle and International Space Station experiments. The present thermometer design easily permits a variety of magnetic materials for use in other applications.

Welander, Paul↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
NASA NTRS1990

Superconductivity applications for infrared and microwave devices; Proceedings of the Meeting, Orlando, FL, Apr. 19, 20, 1990

Various papers on superconductivity applications for IR and microwave devices are presented. The individual topics addressed include: pulsed laser deposition of Tl-Ca-Ba-Cu-O films, patterning of high-Tc superconducting thin films on Si substrates, IR spectra and the energy gap in thin film YBa2Cu3O(7-delta), high-temperature superconducting thin film microwave circuits, novel filter implementation utilizing HTS materials, high-temperature superconductor antenna investigations, high-Tc superconducting IR detectors, high-Tc superconducting IR detectors from Y-Ba-Cu-O thin films, Y-Ba-Cu0-O thin films as high-speed IR detectors, fabrication of a high-Tc superconducting bolometer, transition-edge microbolometer, photoresponse of YBa2Cu3O(7-delta) granular and epitaxial superconducting thin films, fast IR response of YBCO thin films, kinetic inductance effects in high-Tc microstrip circuits at microwave frequencies.

Bhasin, Kul B.↗
NASA NTRS1991

Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991

Topics discussed include thin-film technology, microwave transmission lines and resonators, microwave devices and circuits, infrared detectors and bolometers, and superconducting junctions. Papers are presented on possible enhancement in bolometric response using free-standing film of YBa2Cu3O(x), aging and surface instability in high-Tc superconductors, epitaxial Tl2Ba2CaCu2O8 thin films on LaAlO3 and their microwave device properties, the performance of stripline resonators using sputtered YBCO films, and a coplanar waveguide microwave filter of YBa2Cu3O7. Attention is also given to the performance characteristics of Y-Ba-Cu-O microwave superconducting detectors, high-Tc bolometer developments for planetary missions, infrared detectors from YBaCuO thin films, high-temperature superconductor junction technology, and submillimeter receiver components using superconducting tunnel junctions.

Heinen, Vernon O.↗
NASA NTRS1985

Four K refrigerators with a new compact heat exchanger

Two refrigerators have been developed which have nominal cpacities of 0.25M and 0.5W at 4.2K. These use standard two stage Displex sup R expanders and compressors combined with a new compact heat exchanger which is concentric with the expander cylinder. These refrigerators can be used to cool superconducting electronic devices by direct attachment to the 4K heat station, or they can be plugged into the neck of a liquid helium superconducting magnet cryostat where they can cool the radiation shields and reliquefy helium.

Longsworth, R. C.↗
NASA NTRS2005

Hot-Electron Photon Counters for Detecting Terahertz Photons

A document proposes the development of hot-electron photon counters (HEPCs) for detecting terahertz photons in spaceborne far-infrared astronomical instruments. These would be superconducting- transition-edge devices: they would contain superconducting bridges that would have such low heat capacities that single terahertz photons would cause transient increases in their electron temperatures through the superconducting- transition range, thereby yielding measurable increases in electrical resistance. Single devices or imaging arrays of the devices would be fabricated as submicron-sized bridges made from films of disordered Ti (which has a superconducting- transition temperature of .0.35 K) between Nb contacts on bulk silicon or sapphire substrates. In operation, these devices would be cooled to a temperature of .0.3 K. The proposed devices would cost less to fabricate and operate, relative to integrating bolometers of equal sensitivity, which must be operated at a temperature of approx. = 0.1 K.

Karasik, Boris↗
NASA NTRS1965

Superconductive magnetic-field-trapping device

An apparatus which enables the establishment of a magnetic field in air that has the same intensity as the ones in ferromagnetic materials is described. The apparatus is comprised of a core of ferromagnetic material and is surrounded by a cylinder made of a material that has superconducting properties when cooled below a critical temperature. A method is provided for producing a magnetic field through the ferromagnetic core. The core can also be split and pulled apart when it is required that the center of the cavity be left empty.

Hildebrandt, A. F.↗
NASA NTRS1996

Materials For Improved Josephson-Junction Devices

Number of superconductive, normally conductive, and insulating materials proposed for use in fabricating improved superconductor/insulator/superconductor (SIS) and superconductor/normal conductor/superconductor (SNS) electronic devices capable of operation at frequencies up into terahertz range. Such devices particularly useful as electrically nonlinear circuit elements of mixers and local oscillators in heterodyne receivers.

Vasquez, Richard P.↗
NASA NTRS1972

Applied Superconductivity Conference, 5th, Annapolis, Md., May 1-3, 1972, Proceedings.

Recently developed practical applications of superconductivity are described in papers dealing with transportation and propulsion, power generation, power transmission, special-purpose magnets, superconducting materials, Josephson junctions, and microwave systems. Important topics considered include tracked magnetic-cushion vehicles, electrical machines, cryogenic underground power transmission systems, magnets for fusion reactors and particle accelerators, thin-film superconductors, effects of the structural characteristics of materials on transition temperatures, frequency measurement with Josephson devices, and superconducting scientific instruments. Individual items are announced in this issue.

Source record↗
NASA NTRS2019

Extended Line Spread Function of TES Microcalorimeters with Au/Bi Absorbers

Microcalorimeters have the potential to provide line shapes well-described by a single Gaussian broadening term of few-eV width. This attribute makes the detectors especially well suited for x-ray astrophysics observations; however, low-level non-Gaussian broadening terms are expected and must be characterized. These terms depend on the composition of the x-ray absorber, the detailed x-ray absorption physics, the device thermalization processes, and the incident x-ray energy. Here we present the first measurements targeted at understanding the extended line-spread function (LSF) of x-ray microcalorimeter pixels under development for the X-ray Integral Field Unit (XIFU) on the Athena X-ray Observatory. These pixels are comprised of Mo/Au transition-edge sensors (TESs) with overhanging electroplated Au/Bi absorbers. We measured the line shapes using monochromatic x-ray sources with < 1 eV width at several x-ray energies (0.85, 0.93, 1.25, 1.5, 5.4, and 8.0 keV) across the instrument bandpass (0.3-12 keV) and modeled the line profiles. These results are compared to the extended LSF of the Hitomi microcalorimeter pixels that used HgTe absorbers.

Superconducting devices↗
NASA NTRS1992

Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films

The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.

Subramanyam, G.↗
NASA NTRS2004

THz Hot-Electron Photon Counter

We present a concept for the hot-electron transition-edge sensor capable of counting THz photons. The main need for such a sensor is a spectroscopy on future space telescopes where a background limited NEP approx. 10(exp -20) W/H(exp 1/2) is expected at around 1 THz. Under these conditions, the rate of photon arrival is very low and any currently imaginable detector with sufficient sensitivity will operate in the photon counting mode. The Hot-Electron Photon Counter based on a submicron-size Ti bridge has a very low heat capacity which provides a high enough energy resolution (approx.140 GHz) at 0.3 K. With the sensor time constant of a few microseconds, the dynamic range would be approx. 30 dB. The sensor couples to radiation via a planar antenna and is read by a SQUID amplifier or by a 1-bit RSFQ ADC. A compact array of the antenna-coupled counters can be fabricated on a silicon wafer without membranes.

radiation detectors↗
NASA NTRS2006

An Ultrasensitive Hot-Electron Bolometer for Low-Background SMM Applications

We are developing a hot-electron superconducting transition-edge sensor (TES) that is capable of counting THz photons and operates at T = 0.3K. The main driver for this work is moderate resolution spectroscopy (R approx. 1000) on the future space telescopes with cryogenically cooled (approx. 4 K) mirrors. The detectors for these telescopes must be background-limited with a noise equivalent power (NEP) approx. 10(exp -19)-10(exp -20) W/Hz(sup 1/2) over the range v = 0.3-10 THz. Above about 1 THz, the background photon arrival rate is expected to be approx. 10-100/s), and photon counting detectors may be preferable to an integrating type. We fabricated superconducting Ti nanosensors with a volume of approx. 3x10(exp -3) cubic microns on planar substrate and have measured the thermal conductance G to the thermal bath. A very low G = 4x10(exp -14) W/K, measured at 0.3 K, is due to the weak electron-phonon coupling in the material and the thermal isolation provided by superconducting Nb contacts. This low G corresponds to NEP(0.3K) = 3x10(exp -19) W/Hz(sup 1/2). This Hot-Electron Direct Detector (HEDD) is expected to have a sufficient energy resolution for detecting individual photons with v > 0.3 THz at 0.3 K. With the sensor time constant of a few microseconds, the dynamic range is approx. 50 dB.

bolometers↗