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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Interfacial recombination at /AlGa/As/GaAs heterojunction structures

Experiments were conducted to determine the interfacial recombination velocity at Al0.25Ga0.75As/GaAs and Al0.5Ga0.5As/GaAs heterojunctions. The recombination velocity was derived from a study of the injected minority-carrier lifetime as a function of the junction spacing. It is found that for heterojunction spacings in excess of about 1 micron, the interfacial recombination can be characterized by a surface recombination velocity of 4,000 and 8,000 cm/sec for the two types of heterojunctions, respectively. For double-heterojunction spacings below 1 micron, the constancy of the minority-carrier lifetime suggests that the interfacial recombination velocity decreases effectively. This effect is technologically very important since it makes it possible to construct very low-threshold injection lasers. No such effect is observed in single-heterojunction diodes.

Ettenberg, M.↗
NASA NTRS1985

Measurement of electrical parameters and current components in the bulk of silicon solar cells

A review and illustration of electrical measurements for determination of the bulk parameters in silicon solar cells is given. The presentation concentrates on transient and small signal admittance measurements. These measurements yield accurate and reliable values of the base lifetime and the surface recombination velocity at the back contract without inaccuracies that normally results from electrons and holes in the p/n junction space charge region. This then allows the determination of the recombination current in each region of the cell. As an example, current components in the emitter, low doped base, high doped base and junction space charge region of the back surface field cell are obtained. Such analysis is essential in determining the relative importance of the base and the emitter and, thus, the region that limits the cell efficiency.

Neugroschel, A.↗
NASA NTRS1983

Influence of radiative recombination on the minority-carrier transport in direct band-gap semiconductors

When a semiconductor sample is irradiated by means of an external source, emitting photons or electrons, excess carriers are produced which distribute themselves throughout the sample. One of the parameters which determine the distribution of the carriers is the surface recombination velocity. The present investigation is concerned with the recombination lifetime tau. The predominant mechanism for recombination in wide band-gap semiconductors is described by the Shockley-Read-Hall (SRH) theory. The transport equations are derived for free carriers and the radiation field. The considered theory is applied to a semiinfinite, one-dimensional semiconductor slab irradiated by light of a given frequency. Some numerical considerations based on n-type GaAs are presented. Attention is given to a determination of the radiation transmitted through the surface of the sample.

Von Roos, O.↗
NASA NTRS1974

Low-high junction theory applied to solar cells

Recent use of alloying techniques for rear contact formation has yielded a new kind of silicon solar cell, the back surface field (BSF) cell, with abnormally high open-circuit voltage and improved radiation resistance. Several analytical models for open-circuit voltage based on the reverse saturation current are formulated to explain these observations. The zero surface recombination velocity (SRV) case of the conventional cell model, the drift field model, and the low-high junction (LHJ) model can predict the experimental trends. The LHJ model applies the theory of the low-high junction and is considered to reflect a more realistic view of cell fabrication. This model can predict the experimental trends observed for BSF cells.

Godlewski, M. P.↗
NASA NTRS1975

High efficiency graded band-gap Al/x/Ga/1-x/As-GaAs p-on-n solar cell

A theoretical analysis of p-on-n (p/n) graded band-gap Al/x/Ga/1-x/As-GaAs solar cells including all practical energy loss mechanisms predicts air mass zero efficiencies of 17.3%. The energy losses include those due to spectral reflection, surface, bulk and junction recombination currents, and series resistance. The device consists of a layer of p-type Al/x/Ga/1-x/As 3.5-micron thick on top of an n-type GaAs substrate. The graded band-gap is achieved by decreasing x from 0.35 at the surface to zero at the junction. The same structure without the graded Al concentration, no longer an optimum device, has an efficiency of 10.4%. The primary function of the graded band-gap material is the reduction of surface and bulk recombination losses in the surface layer by a built-in electric field. A comparison of the p/n structure with an optimized n/p structure indicates that the latter has a slightly higher efficiency (17.7%) for assumed minority carrier diffusion lengths and surface recombination velocity.

Hutchby, J. A.↗
NASA NTRS1976

Theoretical optimization and parametric study of n-on-p Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity

Hutchby, J. A.↗
NASA NTRS1979

The potential of np GaAs solar cells for high efficiency concentrator applications

This communication considers the design of the front grid contact of np GaAs solar cells for high efficiency concentrator applications. This design involves shadowing, contact resistance, and active layer sheet resistance losses, and at high concentrations, the power loss due to voltage drop on the resistance of the grid fingers should be considered. Analysis of the performance can be calculated as a function of junction depth and surface recombination velocity. The junction depth can be optimized by considering its effect on the collection efficiency of the dark current-voltage characteristics or the open circuit voltage, and on the series resistance loss or the fill factor for material parameters. The choice of the material parameters, calculation of the short circuit current, the selection of the n layer thickness, and the cell maximum power and efficiency are discussed. It is concluded that optimized multi-grid structures should allow the use of 10 by 10 sq cm cells with good efficiencies at high concentration ratios, and efficiencies of 22 to 25% should be obtainable from large area cells at concentrations of 40 AM1.

Flat, A.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

The determination of transport parameters of minority carriers in n-p junctions by means of an electron microscope - Critique of recent developments

It has recently been shown that amplitude modulated electron beams provide a novel means for the determination of minority carrier lifetimes, diffusion lengths, etc., in n-p junctions. In this paper it is shown that: (1) a recently published analysis based on a cylindrically symmetric configuration is incorrect, (2) the correct approach leads to a system of dual integral equations for which the formal solution is given, (3) in general, the short circuit current can only be determined by means of extensive computer calculations except in the case of large front surface recombination velocities, and (4) the difficulties encountered with cylindrically symmetric configurations (circular ohmic contacts and the like) are completely avoided with a choice of a planar geometry since simple closed form expressions for the short circuit current are readily available in this case.

Von Roos, O.↗
NASA NTRS1980

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

Effects of grain boundaries in polycrystalline solar cells

In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.

Zook, J. D.↗
NASA NTRS1979

Some characteristics of low-cost silicon sheet

The paper discusses structural defects in low-cost silicon sheets and their effect on the electronic properties related to solar cell performance. Experimental data are presented on the influence of grain boundaries on minority carrier diffusion length, impurity defect interaction, and variable surface recombination velocity. An analytical model of the effect of grain boundaries on solar cell performance is constructed based on these results.

Koliwad, K. M.↗
NASA NTRS1980

Determination of deep level capture cross sections in wide band-gap semiconductors by means of an electron beam

The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.

Von Roos, O.↗
NASA NTRS1980

Silicon Research and Technology Workshop report

The materials, structures, processing, modeling and measurements of high efficiency silicon solar cells were surveyed. In the materials area, highlights included: (1) the possibility of improving cell voltages by reducing minority carrier mobilities in critical regions of the solar cells; (2) the need for and possibility of lowering the surface recombination velocity for improvement of open circuit voltage in shallow junction cells; (3) the present need for improved lifetime in high resistivity cells; and (4) the potential for new materials such as polycrystalline or dendritic web material to perform well at end of life in a radiation environment. In the area of structures, distinction was made between those for terrestrial use and those that would survive radiation environments. Areas such as epitaxial growth and laser or elctron beam annealing (and diffusion) were proposed as having certain advantages over more conventional techniques.

Meulenberg, A., Jr.↗