SEARCH · Search NASA

Results for “switching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4

All sources NASA NTRS DOE OSTI

DOE OSTI2023

Configuration of an optical switch fabric using machine learning

An optical switch fabric comprises two or more optical switch elements. The optical switch elements are configured in a topology. A switch control has a plurality of bias control signals. The switch control can address one or more of the optical switch elements and can apply one of the bias control signals to bias of the addressed optical switch element to establish a switch setting. The topology and switch settings determine how each of one of the inputs is connected to each of one of the outputs of the optical switch fabric. The switch settings are determined by a machine learning process which includes a model creation. The model can be made to adapt dynamically during optical switch fabric operation.

Dupuis, Nicolas↗

DOE OSTI2023

Design of high polarization low switching barrier hybrid improper ferroelectric perovskite oxide superlattices

Hybrid improper ferroelectricity is a useful tool to design ABO 3 /A'BO 3 polar superlattices from non polar building blocks. In this study, we have designed high polarization-low switching barrier hybrid improper ferroelectric superlattices with efficient polarization, and polarization-magnetization switching properties above room temperature, using density functional theory and ab initio molecular dynamics simulations. Superlattices with a chemical formula of (AAlO 3 ) m /(A'AlO 3 ) n , where m/n = 1/1, 1/3, 3/1, 1/5 and 5/1, A, A' = Lanthanide and Y cations are considered to outline the design principles behind polarization switching and (LaFeO 3 ) 3 /(CeFeO 3 ) 1 is investigated for polarization-magnetization switching. We find that the unconventional switching paths via out-of-phase rotation Q R- (a 0 a 0 c - ) and tilt precession QTP always yield lower switching barrier compared to those via in-phase rotation Q R+ (a 0 a 0 c + ) and tilt QT (a - a - c 0 ) of BO 6 octahedra. Results from ab initio molecular dynamics simulations estimate the temperature at which the lowest energy barrier can be overcome. Furthermore, it is possible to tune the polarization switching barrier by tuning the tolerance factor, A,A' cation radius mismatch and super lattice periodicity. For switching via Q R- , the switching barrier varies exponentially with rotation angle, indicating how high switching barrier is expected for systems, away from cubic symmetry. We provide a recipe to overcome such a bottleneck by tuning superlattice periodicity. Finally, we have proposed the multiferroic device application concept through a proposed polarization-temperature hysteresis loop and magnetization switching.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Unifying femtosecond and picosecond single-pulse magnetic switching in Gd-Fe-Co

Many questions are still open regarding the physical mechanisms behind the magnetic switching in Gd-Fe-Co alloys by single optical pulses. Phenomenological models suggest a femtosecond scale exchange relaxation between sublattice magnetization as the driving mechanism for switching. The recent observation of thermally induced switching in Gd-Fe-Co by using both several picosecond optical laser pulse as well as electric current pulses has questioned this previous understanding. This has raised the question of whether or not the same switching mechanics are acting at the femtosecond and picosecond scales. In this work, we aim at filling this gap in the understanding of the switching mechanisms behind thermal single-pulse switching. To that end, we have studied experimentally thermal single-pulse switching in Gd-Fe-Co alloys, for a wide range of system parameters, such as composition, laser power, and pulse duration. We provide a quantitative description of the switching dynamics using atomistic spin dynamics methods with excellent agreement between the model and our experiments across a wide range of parameters and timescales, ranging from femtoseconds to picoseconds. Furthermore, we find distinct element-specific damping parameters as a key ingredient for switching with long picosecond pulses and argue that switching with pulse durations as long as 15 ps is possible due to a low damping constant of Gd. Our findings can be easily extended to speed up dynamics in other contexts where ferrimagnetic Gd-Fe-Co alloys have been already demonstrated to show fast and energy-efficient processes, e.g., domain-wall motion in a track and spin-orbit torque switching in spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1995

Information Switching Processor (ISP) contention analysis and control

In designing a satellite system with on-board processing, the selection of a switching architecture is often critical. The on-board switching function can be implemented by circuit switching or packet switching. Destination-directed packet switching has several attractive features, such as self-routing without on-board switch reconfiguration, no switch control memory requirement, efficient bandwidth utilization for packet switched traffic, and accommodation of circuit switched traffic. Destination-directed packet switching, however, has two potential concerns: (1) contention and (2) congestion. And this report specifically deals with the first problem. It includes a description and analysis of various self-routing switch structures, the nature of contention problems, and contention and resolution techniques.

Inukai, Thomas↗

NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗

NASA NTRS2016

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

In this paper, a computational study is presented of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magneto-mechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.13; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping. For the cases considered, optimal resistive shunt damping performed considerably better than both voltage- and shunt-controlled stiffness switching.

vibration control↗

NASA NTRS1988

Optoelectronic techniques for broadband switching

Optoelectronic switching employs a hybrid optical/electronic principle to perform the switching function and is applicable for either analog broadband or high-bit rate digital switching. The major advantages of optoelectronic switching include high isolation, low crosstalk, small physical size, light weight, and low power consumption. These advantages make optoelectronic switching an excellent candidate for on-board satellite switching. This paper describes a number of optoelectronic switching architectures. System components required for implementing these switching architectures are discussed. Performance of these architectures are evaluated by calculating their crosstalk, isolation, insertion loss, matrix size, drive power, throughput, and switching speed. Technologies needed for monolithic optoelectronic switching are also identified.

Su, S. F.↗

NASA NTRS1993

Plasma-puff initiation of high Coulomb transfer switches

The plasma-puff triggering mechanism based on a hypocycloidal pinch geometry was investigated to determine the optimal operating conditions for an azimuthally uniform surface flashover which initiates plasma-puff under wide ranges of fill gas pressures of Ar, He and N2. The optimal fill gas pressures for the azimuthally uniform plasma-puff were about 120 mTorr less than P(opt) less than 450 Torr for He and N2. For Argon 120 mTorr less than P(opt) less than 5 Torr for argon. The inverse pinch switch was triggered with the plasma-puff and the switching capability under various electrical parameters and working gas pressures of Ar, He and N2 was determined. It was also shown that the azimuthally uniform switching discharges were dependent on the type of fill gas and its fill pressure. A new concept of plasma-focus driven plasma-puff was also discussed in comparison with hypocycloidal pinch plasma-puff triggering. The main discharge of the inverse pinch switch with the plasma-focus driven plasma-puff trigger is found to be more azimuthally uniform than that with the hypocycloidal pinch plasma-puff trigger in a gas pressure region between 80 mTorr and 1 Torr. In order to assess the effects of plasma current density on material erosion of electrodes, emissions from both an inverse-pinch plasma switch (INPIStron) and from a spark gap switch under test were studied with an optical multichannel analyzer (OMA). The color temperature of the argon plasma was approximately 4,000 K which corresponded with the peak continuum emission near 750 nm. There are the strong line emissions of argon in the 650 - 800 nm range and a lack of line emissions of copper and other solid material used in the switch. This indicates that the plasma current density during closing is low and the hot spot or hot filament in the switch is negligible. This result also indicates considerable reduction of line emission with the INPIStron switch over that of a spark-gap switch. However, a strong carbon line emission exists due to vaporization of the plastic insulator used. In order to reduce the vaporization of the insulator, the plexiglass insulating material of INPIStron was replaced with Z-9 material. A comparative study of the INPIStron and a spark gap also reveals that the INPIStron, with a low impedance of Z equals 9 ohms, can transfer a high voltage pulse with a superior pulse-shape fidelity over that of a spark gap with Z equals 100 ohms.

Venable, D. D.↗

NASA NTRS1993

Plasma-puff initiation of high Coulomb transfer switches

The plasma-puff triggering mechanism based on a hypocycloidal pinch geometry was investigated to determine the optimal operating conditions for an azimuthally uniform surface flashover which initiates plasma-puff under wide ranges of fill gas pressures of Ar, He and N2. The optimal fill gas pressures for the azimuthally uniform plasma-puff were about 120 mTorr less than P(sub opt) less than 450 Torr for He and N2. For Argon 20 mTorr is less than P(sub opt) is less than 5 Torr. The inverse pinch switch was triggered with the plasma-puff and the switching capability under various electrical parameters and working gas pressures of Ar, He and N2 was determined. It was also shown that the azimuthally uniform switching discharges were dependent on the type of fill gas and its fill pressure. A new concept of plasma-focus driven plasma-puff was also discussed in comparison with hypocycloidal pinch plasma-puff triggering. The main discharge of the inverse pinch switch with the plasma-focus driven plasma-puff trigger is found to be more azimuthally uniform than that with the hypocycloidal pinch plasma-puff trigger in a gas pressure region between 80 mTorr and 1 Torr. In order to assess the effects of plasma current density on material erosion of electrodes, emissions from both an inverse-pinch plasma switch (INPIStron) and from a spark gap switch under test were studied with an optical multichannel analyzer (OMA). The color temperature of the argon plasma was approximately 4,000 K which corresponded with the peak continuum emission near 750 nm. There are the strong line emissions of argon in the 650 - 800 nm range and a lack of line emissions of copper and other solid material used in the switch. This indicates that the plasma current density during closing is low and the hot spot or hot filament in the switch is negligible. This result also indicates considerable reduction of line emission with the INPIStron switch over that of a spark-gap switch. However, a strong carbon line emission exists due to vaporization of the plastic insulator used. In order to reduce the vaporization of the insulator, the plexiglass insulating material of INPIStron was replaced with Z-9 material. A comparative study of the INPIStron and a spark gap also reveals that the INPIStron, with a low impedance of Z = 9 ohms, can transfer a high voltage pulse with a superior pulse-shape fidelity over that of a spark gap with Z = 100 ohms.

Han, Kwang S.↗

NASA NTRS2005

Support of NASA ADR/ Cross-Enterprise NRA Advanced Adiabatic Demagnetization Refrigerators for Continuous Cooling from 10K to 50mK, Development of a Heat Switch

Mechanical heat switches are used in conjunction with sorption refrigerators, adiabatic demagnetization refrigerators and for other cryogenic tasks including the pre-cooling cryogenic systems. They use a mechanical actuator which closes Au plated Cu jaws on an Au plated Cu bar. The thermal conductance in the closed position is essentially independent of the area of the jaws and proportional to the force applied. It varies linearly with T. It is approximately 10mW/K for 200 N at 1.5K. In some applications, the heat switch can be driven from outside the cryostat by a rotating rod and a screw. Such heat switches are available commercially from several sources. In other applications, including systems for space, it is desirable to drive the switch using a cold linear motor, or solenoid. Superconducting windings are used at temperatures s 4.2K to minimize power dissipation, but are not appropriate for pre-cooling a system at higher temperatures. This project was intended to improve the design of solenoid activated mechanical heat switches and to provide such switches as required to support the development of Advanced Adiabatic Demagnetization Refrigerators for Continuous Cooling from 10 K to 50 mK at GSFC. By the time funding began in 5/1/01, the immediate need for mechanical heat switches at GSFC had subsided but, at the same time, the opportunity had arisen to improve the design of mechanical heat switching by incorporating a "latching solenoid". In this device, the solenoid current is required only for changing the state of the switch and not during the whole time that the switch is closed.

Richards, Paul L.↗

NASA NTRS1980

Parallel access alignment network with barrel switch implementation for d-ordered vector elements

An alignment network between N parallel data input ports and N parallel data outputs includes a first and a second barrel switch. The first barrel switch fed by the N parallel input ports shifts the N outputs thereof and in turn feeds the N-1 input data paths of the second barrel switch according to the relationship X=k.sup.y modulo N wherein x represents the output data path ordering of the first barrel switch, y represents the input data path ordering of the second barrel switch, and k equals a primitive root of the number N. The zero (0) ordered output data path of the first barrel switch is fed directly to the zero ordered output port. The N-1 output data paths of the second barrel switch are connected to the N output ports in the reverse ordering of the connections between the output data paths of the first barrel switch and the input data paths of the second barrel switch. The second switch is controlled by a value m, which in the preferred embodiment is produced at the output of a ROM addressed by the value d wherein d represents the incremental spacing or distance between data elements to be accessed from the N input ports, and m is generated therefrom according to the relationship d=k.sup.m modulo N.

Barnes, George H.↗

NASA NTRS2008

RF MEMS Switches with SiC Microbridges for Improved Reliability

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

Scardelletti, Maximilian C.↗

NASA NTRS2013

RF Reference Switch for Spaceflight Radiometer Calibration

The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.

Knuble, Joseph↗

NASA NTRS2016

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

This paper presents a computational study of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magnetomechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.25; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping.

stiffness tuning↗

DOE OSTI2022

Current source inverter with bi-directional switches

A switching circuit includes a diode, a semiconductor switch, and a first bidirectional switch. The semiconductor switch is configured to conduct a first current from a second terminal to a third terminal of the semiconductor switch when a first on-state signal is sent to a first terminal of the semiconductor switch. An anode of the diode is connected to the second terminal of the semiconductor switch, and a cathode of the diode is connected to the third terminal of the semiconductor switch. The first bidirectional switch includes a first terminal, a second terminal connected to the anode of the diode, and a third terminal and is configured to conduct a second current from the second terminal to the third terminal or from the third terminal to the second terminal when a second on-state signal is sent to the first terminal of the first bidirectional switch.

Dai, Hang↗

NASA NTRS2004

Power Actuation and Switching Module Development

The Deep Space Avionics (DSA) Project is developing a Power Actuation and Switching Module (PASM). This component enables a modular and scalable design approach for power switching applications, which can result in a wide variety of power switching architectures using this simple building block. The PASM is designed to provide most of the necessary power switching functions of spacecraft for various Deep Space missions including future missions to Mars, comets, Jupiter and its moons. It is fabricated using an A SIC process that is tolerant of high radiation. The development includes two application specific integrated circuits (ASICs) and support circuitry all packaged using High Density Interconnect (HDI) technology. It can be operated in series or parallel with other PASMs, It can be used as a high-side or low-side switch and it can drive thruster valves, pyrotechnic devices such as NASA standard initiators, bus shunt resistors, and regular spacecraft component loads. Each PASM contains two independent switches with internal current limiting and over-current trip-off functions to protect the power subsystem from load faults. During turnon and turnoff each switch can limit the rate of current change (di/dt) to a value determined by the user. Threeway majority-voted On/Off commandability and full switch status telemetry (both analog and digital) are built into the module. This paper describes the development process used to design, model, fabricate, and test these compact and versatile power switches. Preliminary test results from prototype HDI PASM hardware are also discussed.

Power Actuation and Switching Module (PASM)↗

DOE OSTI2021

RKKY Exchange Bias Mediated Ultrafast All-Optical Switching of a Ferromagnet

The discovery of ultrafast helicity-independent all-optical switching (HI-AOS), as well as picosecond all-electrical switching of a ferrimagnet, has inspired the ultrafast spintronics community to explore ultrafast switching of a ferromagnet to achieve practical ultrafast storage and memory devices. Two explored mechanisms of HI-AOS of a ferromagnet in ferromagnet-ferrimagnet heterostructure are: a) exploiting the indirect exchange coupling with and b) injection of non-local spin current originated from a switching ferrimagnet. Here, in this manuscript, exchange mediated HI-AOS of a Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange coupled “[Co/Pt]-multilayers/Pt spacer/CoGd” heterostructure is demonstrated. The authors have measured layer-resolved static magnetic properties, single-shot HI-AOS, and magnetization dynamics of the ferromagnetic Co/Pt multilayers (MLs), that are ferromagnetically or antiferromagnetically coupled with ferrimagnetic CoGd layers. Time-resolved magnetization dynamics reveal a 3.5 ps switching time of the Co/Pt MLs, which is the fastest switching of a ferromagnet reported to date. Employing an extended microscopic three-temperature model, the temporal dynamics of the exchange coupled ferromagnet–ferrimagnet heterostructure are simulated, qualitatively and quantitatively explaining the experimental switching phenomena. This work experimentally as well as theoretically establishes the mechanism of exchange mediated all-optical switching of ferromagnet-ferrimagnet heterostructures, which can be integrated with a magnetic tunnel junction for efficient reading after ultrafast energy-efficient switching.

36 MATERIALS SCIENCE↗

DOE OSTI2021

A molecular dynamics study of domain switching in BiFeO 3 nanofilm under DC electric field

The performance of ferroelectric materials is deeply rooted in the domain switching process triggered by an applied electric field. To understand the effect of controlling factors on the domain switching characteristics, nanoscale studies are essential. In this work, an atomistic-scale computational framework is developed to study the domain switching process of bismuth ferrite (BiFeO 3 ) nanofilms. Through a series of molecular dynamics simulations, the effects of duration and magnitude of an electric field, domain size and nanofilm thickness on the domain switching behavior are investigated. The evolution of domains under different magnitudes and durations of the applied electric field is studied, and the results of unswitched and switched cases are summarized in a switching map. Analysis of various nanofilms reveals that by increasing the film thickness, the switching time is increased. Additionally, the nanofilms with different domain sizes and configurations are examined, and the minimum domain size for complete reversal switching is obtained. Our results are helpful to predict and tune the switching process in ferroelectric materials.

36 MATERIALS SCIENCE↗