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At least 73 records · Page 4

Overcoming the thermal conductivity versus oxidation resistance barrier in high-temperature steels

Heat-resistant steels with high chromium additions (≥5 weight percent) are critical for many high temperature energy and manufacturing applications, including heat exchangers, pistons for engines, and dies for metal working and casting. However, while high chromium additions increase oxidation resistance at elevated temperatures, they also compromise thermal conductivity, resulting in a metallurgical trade-off between these two important properties. Here we show that a microstructure with both higher thermal conductivity and improved oxidation resistance at elevated temperatures is achieved in a unique steel with only 1 weight percent chromium, thereby overcoming the long-standing metallurgical trade-off. This is accomplished through a tailored thermal treatment that produces a tempered martensitic matrix with low solute content and a fine dispersion of copper precipitates and molybdenum enriched carbides. A further discovery is that the resultant thermally grown oxide includes an iron-copper-manganese-enriched outer layer that provides high-temperature oxidation protection equivalent to heat-resistant steels with five times the chromium content and 25% lower thermal conductivity.

Pierce, Dean T. [Oak Ridge National Laboratory (OR↗

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗

Investigation of Oxidation Mechanisms in HfS 2 and ZrS 2 via In Situ Electron Microscopy

Transition metal dichalcogenides (TMD) combine semiconducting properties with stability and are therefore widely studied for future microelectronic devices. However, applications require integration with a suitable dielectric at a planar, defect-free interface. For Hf- and Zr-based TMDs, the good dielectric properties of hafnia and zirconia imply that direct oxidation is a promising strategy, provided that a high-quality interface and suitable oxide morphology can be formed. Here, in this study, we investigate HfS 2 and ZrS 2 oxidation, aiming to understand pathways toward planar oxide layer formation and the mechanisms that determine the characteristics of the semiconductor/dielectric interface. We use conventional and environmental transmission electron microscopy to reveal changes in morphology and composition of the TMDs under different gaseous environments. We show that oxidation at ambient conditions causes compositional heterogeneities, with local replacement of S by O in both materials. Thermal oxidation causes desulfurization and formation of a smooth but defective oxide layer. In contrast, plasma oxidation appears the best-suited to forming a controlled TMD/dielectric interface with a smooth oxide layer and without major defects. These results provide insight into the opportunities available from HfS 2 and ZrS 2 through oxidation and suggest a materials processing strategy for electronic device fabrication.

HfS2↗

Channel Scaling Dependent Photoresponse of Copper-Based Flexible Photodetectors Fabricated Using Laser-Induced Oxidation

Copper (Cu) oxide compounds (Cu x O), which include cupric (CuO) and cuprous (Cu 2 O) oxide, have been recognized as a promising p-channel material with useful photovoltaic properties and superior thermal conductivity. Typically, deposition methods or thermal oxidation can be used to obtain Cu x O. However, these processes are difficult to apply to flexible substrates because plastics have a comparatively low glass transition temperature. Also, additional patterning steps are needed to fabricate applications. In this work, we fabricated a metal–semiconductor–metal photodetector using laser-induced oxidation of thin Cu films under ambient conditions. Raman spectroscopy, scanning electron microscopy–energy-dispersive X-ray spectroscopy, and atomic force microscopy were used to study the composition and morphology of our devices. Moreover, the photoresponse of this device is reported herein. We performed an in-depth analysis of the relationship between the channel size and number of carriers using scanning photocurrent microscopy. The carrier transport behaviors were identified; the photocurrent decreased as the length and width of the channel increased. Furthermore, we verified the suitability of the device as a flexible photodetector using a variety of bending tests. Our in-depth analysis of this Cu-based flexible photodetector could play an important role in understanding the mechanisms of other flexible photovoltaic applications.

36 MATERIALS SCIENCE↗

Carbon material supported hollow metal oxide nanoparticles, methods and applications

A method for preparing a material composition comprising a hollow transition metal oxide nanoparticle supported upon a carbon material support includes a solution impregnation process step, followed by a thermal reduction process step and finally a thermal oxidation process step. The material composition, an electrode and an electrical component such as but not limited to a battery are all predicated at least in-part upon the material composition prepared in accord with the foregoing method. The foregoing material composition, electrode, battery and method may ultimately provide a LIB with enhanced performance.

Yu, Yingchao↗

Experimental observation of short-range magnetic correlations in amorphous Nb 2 O 5 and Ta 2 O 5 thin films

We use muon spin rotation/relaxation/resonance ( μ SR ) to investigate the magnetic properties of niobium pentoxide ( Nb 2 O 5 ) and tantalum pentoxide ( Ta 2 O 5 ) thin films. In both oxides, we observe a magnetic response at the lowest available temperature of 2.8 K. This response appears to be structurally dependent: thermally oxidized Ta 2 O 5 with low crystallinity demonstrates suppressed magnetism, while fully amorphous Ta 2 O 5 demonstrates local static magnetism. In contrast, amorphous Nb 2 O 5 is dominated by magnetic fluctuations and is strongly magnetically disordered compared to Ta 2 O 5 . Our results suggest that these fundamental differences in the magnetism of Ta and Nb oxides could explain the performance limitations in superconducting qubits and resonators.

Krasnikova, Y. V. [Fermilab] (ORCID:00000002893659↗

Impacts of Bond Type and Grafting Density on the Thermal, Structural, and Transport Behaviors of Nanoparticle Organic Hybrid Materials–Based Electrolytes

Nanoscale Organic Hybrid Materials (NOHMs) consist of polymers tethered to a nanoparticle surface, and NOHMs formed with an ionic bond between the polymer and nanoparticle have been proposed for electrochemical applications. NOHMs exhibit negligible vapor pressure, chemical tunability, oxidative thermal stability, and high ionic conductivity making them attractive in reactive and separation systems. In this study, NOHMs are synthesized by tethering Jeffamine M2070 (HPE) to SiO 2 nanocores via ionic (NOHM-I-HPE) and covalent (NOHM-C-HPE) bonding to investigate the effect of the bond type on the thermal, structural and transport properties of the tethered HPE. In the neat state, NOHM-C-HPE displays the highest thermal stability in a nitrogen atmosphere, while NOHM-I-HPE is the most stable under oxidative conditions. Small-angle neutron scattering (SANS) reveals the presence of multiple types of HPE polymers in aqueous solutions of NOHM-I-HPE (i.e., tethered, interacting, and free), whereas only tethered HPE is observed in NOHM-C-HPE systems. Moreover, the SANS profiles identify clustering of NOHM-C-HPE in aqueous solutions, but not in the corresponding NOHM-I-HPE solutions, suggesting that the free HPE chains stabilize the dispersion of NOHM-I-HPE. Furthermore, the results of this study elucidate how the bond type and grafting density can be used to tune the properties of NOHMs.

25 ENERGY STORAGE↗

Chromium versus Aluminum: Impact of Nickel Alloy Composition and Interfacial Kinetics on High-Temperature Passivating Oxide Formation

High-temperature corrosion resistance depends critically on the formation of a passivating surface oxide, which is highly sensitive to alloy composition and structure. Such details often elude experimental investigation, and simplified analytical models fail to provide a truly chemical view of passivating oxide evolution. Here, we explicitly compare the fundamental chemistry of Cr and Al as prototypical passivating elements in Ni alloys by directly simulating competing reaction and diffusion processes within the oxide film using kinetic Monte Carlo and density functional theory. We find that the origin and expression of passivating behavior during early-stage thermal oxidation are qualitatively different between the two alloy systems. Ni–Cr alloys feature a sudden onset of passivation associated with a sharp phase transition upon Cr enrichment that directly couples oxidation kinetics to phase transformation behavior. In contrast, Ni–Al alloys display more continuous oxide phase variation with Al enrichment, ultimately resulting in a lower composition threshold for passivation and a thinner passivating layer. In addition, we elucidate the nonobvious role of metal exchange within the alloy near the oxide boundary, which fundamentally alters film composition and passivating behavior. Furthermore, our results have key implications for engineering improved corrosion-resistant alloys, both in terms of compositional variation and processing.

Alloys↗

Fluorine-Free Superhydrophobic Coatings: Rapid Fabrication and Highly Efficient Oil/Water Separation

In this work, a rapid method is demonstrated to obtain a fluorine-free superhydrophobic/superoleophilic coating by a simple two-step method: dip-coating and oven curing. The chemical structure of the coating is based on the crosslinking reaction of an alkyl methacrylate, a dimethacrylate (crosslinker) and a silane (adhesive), using AIBN as initiator, toluene as solvent, and silica nanoparticles to enhance surface roughness. Chemorheology results show that the coating is fully cured even in 20 min at 100 °C, exhibiting a water contact angle (CA) of 162 ± 2°, sliding angle (SA) of 4 ± 1°, nanometrical structures throughout the surface, and excellent adhesion properties for the mesh screen. The coating exhibits outstanding oil/water separation efficiency (96–99%) for seven different types of oil (gasoline, diesel, petroleum ether, hexane, toluene, chloroform, and dichloromethane), and in addition presents high recyclability. Based on nonisothermal TGA, the activation energy of degradation, calculated using the Kissinger and Ozawa models, is 113.5 and 114 kJ mol -1 , respectively. Finally, the coating is thermally aged at 150 °C: the CA exhibits a smooth decrease up to 129 ± 1° at 120 min, and FTIR analysis shows structural changes possibly related to the generation of thermal oxidation products.

36 MATERIALS SCIENCE↗

The performance of additively manufactured Haynes 282 in supercritical CO 2

The use of supercritical carbon dioxide (sCO 2 ) as a working fluid is garnering interest in next generation power production systems due to the possibility of increased operational efficiencies and lower associated costs. Its implementation requires alloys with excellent high temperature strength and corrosion resistance, which makes Haynes 282® (H282) a suitable candidate. With increasing adoption of additive manufacturing (AM) in the energy industry, there is a need to investigate long-term sCO2 exposure on AM produced materials. Additively manufactured H282 (AM-H282) samples built using laser powder bed fusion in two different orientations were analyzed through imaging, gravimetric analysis, and room-temperature tensile testing before and after 1000-h exposure to CO 2 at 750 °C and 20 MPa. Performed imaging included observation of the sample surfaces and of the material bulk (cross sections) through means of Scanning Electron Microscopy (SEM) and optical microscopy. In comparison to wrought H282, it was found that the exposed material exhibited a similar Cr 2 O 3 oxide protective layer about 2 μm in thickness with additional top-surface TiO 2 oxide and carbon-rich precipitates. It was also similarly observed that internal oxidation was present but limited to a depth of 20 μm, and a 1–3 μm γ’ denuded region appeared to surround all internal and surface oxidation. Thermal aging effects were noted with the precipitation of needle-like structures in the γ/γ’ matrix and a coarsening of the γ’ precipitates from 28 nm to 73 nm. Mass measurements analyzing oxide precipitation revealed a larger increase compared to wrought, representing an approximate 20% difference. Tensile testing results showed similar behavior to wrought with a slight increase in yield strength and a large reduction in elongation in the exposed samples.

36 MATERIALS SCIENCE↗

Fastener joint and associated method for avoiding corrosion of dissimilar material fastener joints

A fastener for use in joining dissimilar materials manufactured by the process of producing the fastener with an external surface that forms an electrically insulating oxide layer when subjected to oxidation and, after manufacture and prior to use, subjecting the fastener to a pre-oxidation process to grow the desired oxide layer in situ on the external surface of the fastener. The present invention also provides a dissimilar material joint in which the pre-oxidized fastener is used to mechanically join dissimilar materials with the oxide layer electrically insulating the fastener from at least one of the dissimilar materials. The fastener may be a rivet used in friction self-piercing riveting (F-SPR). The fastener may be fabricated from an alloy capable of forming Al 2 O 3 or Cr 2 O 3 by thermal oxidation. The fastener may be pre-coated with Al or Cr that functions as a seed layer to form Al 2 O 3 or Cr 2 O 3 .

Lim, Yong Chae↗

Surface SiO 2 Thickness Controls Uniform-to-Localized Transition in Lithiation of Silicon Anodes for Lithium-Ion Batteries

Silicon is a promising anode material for lithium-ion batteries because of its high capacity, but its widespread adoption has been hampered by a low cycle life arising from mechanical failure and the absence of a stable solid–electrolyte interphase (SEI). Understanding SEI formation and its impact on cycle life is made more complex by the oxidation of silicon materials in air or during synthesis, which leads to SiO x coatings of varying thicknesses that form the true surface of the electrode. Here, the lithiation of SiO 2 -coated Si is studied in a controlled manner using SiO 2 coatings of different thicknesses grown on Si wafers via thermal oxidation. SiO 2 thickness has a profound effect on lithiation: below 2 nm, SEI formation followed by uniform lithiation occurs at positive voltages versus Li/Li + . Si lithiation is reversible, and SiO 2 lithiation is largely irreversible. Above 2 nm SiO 2 , voltammetric currents decrease exponentially with SiO 2 thickness. For 2–3 nm SiO 2 , SEI formation above 0.1 V is suppressed, but a hold at low or negative voltages can initiate charge transfer whereupon SEI formation and uniform lithiation occur. Cycling of Si anodes with an SiO 2 coating thinner than 3 nm occurs at high Coulombic efficiency (CE). If an SiO 2 coating is thicker than 3–4 nm, the behavior is totally different: lithiation at positive voltages is strongly inhibited, and lithiation occurs at poor CE and is highly localized at pinholes which grow over time. As they grow, lithiation becomes more facile and the CE increases. Pinhole growth is proposed to occur via rapid transport of Li along the SiO 2 /Si interface radially outward from an existing pinhole, followed by the lithiation of SiO 2 from the interface outward.

25 ENERGY STORAGE↗

Combinatorial Synthesis and High-Throughput Characterization of Microstructure and Phase Transformation in Ni–Ti–Cu–V Quaternary Thin-Film Library

Ni–Ti–based shape memory alloys (SMAs) have found widespread use in the last 70 years, but improving their functional stability remains a key quest for more robust and advanced applications. Named for their ability to retain their processed shape as a result of a reversible martensitic transformation, SMAs are highly sensitive to compositional variations. Alloying with ternary and quaternary elements to fine-tune the lattice parameters and the thermal hysteresis of an SMA, therefore, becomes a challenge in materials exploration. Combinatorial materials science allows streamlining of the synthesis process and data management from multiple characterization techniques. In this study, a composition spread of Ni–Ti–Cu–V thin-film library was synthesized by magnetron co-sputtering on a thermally oxidized Si wafer. Composition-dependent phase transformation temperature and microstructure were investigated and determined using high-throughput wavelength dispersive spectroscopy, synchrotron X-ray diffraction, and temperature-dependent resistance measurements. Of the 177 compositions in the materials library, 32 were observed to have shape memory effect, of which five had zero or near-zero thermal hysteresis. These compositions provide flexibility in the operating temperature regimes that they can be used in. A phase map for the quaternary system and correlations of functional properties are discussed with respect to the local microstructure and composition of the thin-film library.

42 ENGINEERING↗

Carbon Dioxide Capture at Nucleophilic Hydroxide Sites in Oxidation‐Resistant Cyclodextrin‐Based Metal–Organic Frameworks**

Abstract Carbon capture and sequestration (CCS) from industrial point sources and direct air capture are necessary to combat global climate change. A particular challenge faced by amine‐based sorbents—the current leading technology—is poor stability towards O 2 . Here, we demonstrate that CO 2 chemisorption in γ‐cylodextrin‐based metal–organic frameworks (CD‐MOFs) occurs via HCO 3 − formation at nucleophilic OH − sites within the framework pores, rather than via previously proposed pathways. The new framework KHCO 3 CD‐MOF possesses rapid and high‐capacity CO 2 uptake, good thermal, oxidative, and cycling stabilities, and selective CO 2 capture under mixed gas conditions. Because of its low cost and performance under realistic conditions, KHCO 3 CD‐MOF is a promising new platform for CCS. More broadly, our work demonstrates that the encapsulation of reactive OH − sites within a porous framework represents a potentially general strategy for the design of oxidation‐resistant adsorbents for CO 2 capture.

Zick, Mary E.↗

Carbon Dioxide Capture at Nucleophilic Hydroxide Sites in Oxidation–Resistant Cyclodextrin–Based Metal–Organic Frameworks

Carbon capture and sequestration (CCS) from industrial point sources and direct air capture are necessary to combat global climate change. A particular challenge faced by amine-based sorbents—the current leading technology—is poor stability towards O 2 . Here, we demonstrate that CO 2 chemisorption in γ-cylodextrin-based metal-organic frameworks (CD-MOFs) occurs via HCO 3 – formation at nucleophilic OH – sites within the framework pores, rather than via previously proposed pathways. Here, the new framework KHCO 3 CD-MOF possesses rapid and high-capacity CO 2 uptake, good thermal, oxidative, and cycling stabilities, and selective CO 2 capture under mixed gas conditions. Because of its low cost and performance under realistic conditions, KHCO 3 CD-MOF is a promising new platform for CCS. More broadly, our work demonstrates that the encapsulation of reactive OH – sites within a porous framework represents a potentially general strategy for the design of oxidation-resistant adsorbents for CO 2 capture.

54 ENVIRONMENTAL SCIENCES↗

High-Entropy Borides under Extreme Environment of Pressures and Temperatures

The high-entropy transition metal borides containing a random distribution of five or more constituent metallic elements offer novel opportunities in designing materials that show crystalline phase stability, high strength, and thermal oxidation resistance under extreme conditions. We present a comprehensive theoretical and experimental investigation of prototypical high-entropy boride (HEB) materials such as (Hf, Mo, Nb, Ta, Ti)B2 and (Hf, Mo, Nb, Ta, Zr)B2 under extreme environments of pressures and temperatures. The theoretical tools include modeling elastic properties by special quasi-random structures that predict a bulk modulus of 288 GPa and a shear modulus of 215 GPa at ambient conditions. HEB samples were synthesized under high pressures and high temperatures and studied to 9.5 GPa and 2273 K in a large-volume pressure cell. The thermal equation of state measurement yielded a bulk modulus of 276 GPa, in excellent agreement with theory. The measured compressive yield strength by radial X-ray diffraction technique in a diamond anvil cell was 28 GPa at a pressure of 65 GPa, which is a significant fraction of the shear modulus at high pressures. The high compressive strength and phase stability of this material under high pressures and high temperatures make it an ideal candidate for application as a structural material in nuclear and aerospace fields.

36 MATERIALS SCIENCE↗

Graphene coating on silicon anodes enabled by thermal surface modification for high-energy lithium-ion batteries

Silicon is a high-energy density anode material for lithium-ion batteries, but it possesses shortcomings such as poor electronic conductivity, interfacial instability and mechanical fracturing that hinder its battery cycling. Carbon coating has been an important strategy for stabilizing silicon anodes, but the effects of the silicon surface properties on carbon coating morphology and the consequent silicon cycling stability have not been clearly elucidated. Herein, we find that thermal oxidation of the silicon anodes followed by chemical vapor deposition of carbonaceous precursors leads to a well-ordered graphene coating, whereas disordered graphite coating is formed on the native silicon surface. Graphene-coated silicon exhibits superior cycling performance, retaining a discharge capacity of ~1300 mAh g -1 after 300 cycles, whereas the disordered graphite-coated silicon suffers continuous degradation, retaining only~600 mAh g -1 after 300 cycles. Cryogenic electron microscopy reveals the mechanism behind the difference in cycling stabilities; graphene coated silicon is able to withstand the large mechanical strains induced during extended cycling, whereas disordered graphite coating is ruptured, exposing silicon surfaces to the electrolyte, leading to extensive buildup of SEI and poor cycling performance. Characterization of the silicon surface reveals that thermal treatment yields an oxygen-rich surface layer, which is hypothesized to play a decisive role in dictating the carbon coating. This work highlights the effect of silicon surface properties on carbon coating microstructure, and presents thermal treatment as a facile avenue to attain graphene coating on silicon anodes.

25 ENERGY STORAGE↗