Search NASA⌕ Search

SEARCH · Search NASA

Results for “thin film PV”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Perovskite Quantum Dot Solar Cells: Mapping Interfacial Energetics for Improving Charge Separation

Colloidal halide perovskite nanocrystals or quantum dots (QDs) show similar defect tolerance as thin film perovskite materials with added nanoscale phenomena. Perovskite QD solar cells have demonstrated efficiencies of 16.6%, greater than that of any other QD material system. While the efficiency lags behind the best thin-film perovskite devices, these solar cells could have advantages over the thin-film versions in terms of processability, phase stability, and high open-circuit voltages. However, some operating principles behind perovskite quantum dot device stacks and the associated electric field properties are still unknown. Here, we characterize the junction structure within perovskite QD solar cells, by exposing functioning cross-sections and using nanometer-scale Kelvin probe force microscopy to offer insight into the selection and performance of charge selective contacts. We also evaluated various solar cell device architectures with different selective contacts to isolate the role of each junction in device performance. We show that in high-performance n-i-p architectures, both electron- and hole-transport layer (HTL) interfaces possess a strong electric field, but in the case of the inverted p-i-n architecture, we find that high interfacial recombination at the HTL/QD junction is responsible for subpar device performance. Perovskite QD and thin film materials can synergistically be combined to offer more design flexibility in PV devices, and here we demonstrate that the interface between perovskite thin films and QDs are relatively benign and amenable for synergistic device design.

14 SOLAR ENERGY↗
DOE OSTI2019

Sulfur-Donor Additives Preferentially Coordinate Pb 2+ in Perovskite Precursor Solutions

Lewis base solvents, such as dimethylsulfoxide (DMSO), that strongly coordinate with Pb 2+ are commonly added to hybrid organic-inorganic perovskite (HOIP) precursor solutions to improve thin-film morphology and subsequent photovoltaic (PV) performance. Although nearly all previous studies of precursor solution chemistry have focused on oxygen-donor solvents as Lewis base additives, we expect “softer,” sulfur-donor solvents to coordinate more strongly with Pb 2+ , a borderline-soft Lewis acid. To confirm this hypothesis, we performed extended X-ray absorption fine structure (EXAFS) spectroscopy at the Pb LIII absorption edge to probe the coordination environment of Pb 2+ in solutions comprising mixtures of S- and O-donor solvents. Of the S- and O-donor solvent pairs examined, the S-donor solvent consistently outcompetes its O-donor structural analog for coordination sites around Pb 2+ . In the specific comparison between N-methyl-2-pyrrolidone thione (NMPT) and N-methylpyrrolidone (NMP), density-functional theory calculations indicate that NMPT coordination with Pb 2+ is favored by 10 kcal/mol relative to NMP coordination with Pb 2+ . Similar to the addition of DMSO to precursor solutions, the incorporation of NMPT in fractional quantities provides morphological control of the perovskite film. Unlike DMSO, however, we found NMPT to be stable against undesired transmethylation or disproportionation reactions with methylammonium [1]. Consequentially, films processed with NMPT exhibit no sub-gap electronic states near the valence band edge, in contrast with films prepared using DMSO. We thus believe NMPT merits serious consideration as a solution additive for producing stable HOIP precursor solutions and high-quality HOIP thin films. [1] Hamill, J. C.; Sorli, J. C.; Pelczer, I.; Schwartz, J. and Loo, Y. -L. Acid-catalyzed reactions activate DMSO as a reagent in perovskite precursor inks. Chemistry of Materials 2019, 31, 2114-2120.

Hamill, Joseph↗
DOE OSTI2019

Semitransparent Sb 2 S 3 thin film solar cells by ultrasonic spray pyrolysis for use in solar windows

The integration of photovoltaic (PV) solar energy in zero-energy buildings requires durable and efficient solar windows composed of lightweight and semitransparent thin film solar cells. Inorganic materials with a high optical absorption coefficient, such as Sb 2 S 3 (>10 5 cm -1 at 450 nm), offer semitransparency, appreciable efficiency, and long-term durability at low cost. Oxide-free throughout the Sb 2 S 3 layer thickness, as confirmed by combined studies of energy dispersive X-ray spectroscopy and synchrotron soft X-ray emission spectroscopy, semitransparent Sb 2 S 3 thin films can be rapidly grown in air by the area-scalable ultrasonic spray pyrolysis method. Integrated into a ITO/TiO 2 /Sb 2 S 3 /P3HT/Au solar cell, a power conversion efficiency (PCE) of 5.5% at air mass 1.5 global (AM1.5G) is achieved, which is a record among spray-deposited Sb 2 S 3 solar cells. An average visible transparency (AVT) of 26% of the back-contact-less ITO/TiO 2 /Sb 2 S 3 solar cell stack in the wavelength range of 380–740 nm is attained by tuning the Sb 2 S 3 absorber thickness to 100 nm. In scale-up from mm 2 to cm 2 areas, the Sb 2 S 3 hybrid solar cells show a decrease in efficiency of only 3.2% for an 88 mm 2 Sb 2 S 3 solar cell, which retains 70% relative efficiency after one year of non-encapsulated storage. A cell with a PCE of 3.9% at 1 sun shows a PCE of 7.4% at 0.1 sun, attesting to the applicability of these solar cells for light harvesting under cloud cover.

36 MATERIALS SCIENCE↗
NASA NTRS2021

Probing the Origin of the Open Circuit Voltage in Perovskite Quantum Dot Photovoltaics

Perovskite quantum dots (PQDs) have many properties that make them attractive for optoelectronic applications, including expanded compositional tunability and crystallographic stabilization. While they have not achieved the same photovoltaic (PV) efficiencies of top-performing perovskite thin films, they do reproducibly show high open circuit voltage (VOC) in comparison. Further understanding of the VOC attainable in PQDs as a function of surface passivation, contact layers, and PQD composition will further progress the field and may lend useful lessons for non-QD perovskite solar cells. Here, we use photoluminescence-based spectroscopic techniques to understand and identify the governing physics of the VOC in CsPbI3 PQDs. In particular, we probe the effect of the ligand exchange and contact interfaces on the VOC and free charge carrier concentration. The free charge carrier concentration is orders of magnitude higher than in typical perovskite thin films and could be tunable through ligand chemistry. Tuning the PQD A-site cation composition via replacement of Cs+ with FA+ maintains the background carrier concentration but reduces the trap density by up to a factor of 40, reducing the VOC deficit. These results dictate how to improve PQD optoelectronic properties and PV device performance and explain the reduced interfacial recombination observed by coupling PQDs with thin-film perovskites for a hybrid absorber layer.

perovskite quantum dot↗
DOE OSTI2022

MgZnO High‐Voltage Transparent Thin‐Film Transistors Built on Glass

Recently, there has been increasing interest in building‐integrated photovoltaic (BIPV), which enables harvesting solar energy effectively. Large‐area glass components such as windows are widely used in modern constructions. In addition to the PV on opaque components such as walls and roofs, the transparent photovoltaic (TPV) directly built on glass is complementary to fully utilize the PV energy in BIPV. A high‐voltage transparent thin‐film transistor (HVTTFT) built on glass is an ideal option for distributed microinverters for TPV modules. A wide‐bandgap oxide‐based HVTTFT on glass for this purpose is reported. The HVTTFT on glass uses ZnO‐based materials with different functions for two roles: a semiconductor Mg 0.01 Zn 0.99 O (MZO) as TFT channel and Al‐doped ZnO (AZO) as transparent conductive oxide (TCO) electrodes. The centrosymmetric circular structure of the MZO HVTTFT with a high‐k‐stacking gate dielectric enables a blocking voltage as high as ≈1 kV and an on/off ratio of 10 6 . The device exhibits an average optical transmittance of 81% over the visible spectrum.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Perovskite Solar Cells Go Bifacial—Mutual Benefits for Efficiency and Durability

Bifacial solar cells hold the potential to achieve a higher power output per unit area than conventional monofacial devices without significantly increasing manufacturing costs. However, efficient bifacial designs are challenging to implement in inorganic thin-film solar cells because of their short carrier lifetimes and high rear surface recombination. The emergence of perovskite photovoltaic (PV) technology creates a golden opportunity to realize efficient bifacial thin-film solar cells, owing to their outstanding optoelectronic properties and unique features of device physics. More importantly, transparent conducting oxide electrodes can prevent electrode corrosion by halide ions, mitigating one major instability issue of the perovskite devices. Here, the theory of bifacial PV devices is summarized and the advantages of bifacial perovskite solar cells, such as high power output, enhanced device durability, and low economic and environmental costs, are reviewed. The limitations and challenges for bifacial perovskite solar cells are also discussed. Lastly, the awareness of bifacial solar cells as a feasible commercialization pathway of perovskite PV for mainstream solar power generation and building-integrated PV is advocated and future research directions are suggested.

14 SOLAR ENERGY↗
DOE OSTI2020

Fabrication of flexible perovskite solar cells via rapid thermal annealing

Adaptability, lightweight, and low cost of materials make flexible perovskite solar cells essential for the perovskite technology to breach commercial photovoltaic markets. Roll-to-roll manufacturing has great potential for high-throughput perovskite manufacturing; however, conventional annealing methods are not capable of producing flexible perovskite solar cells at scale. Conventional methods are time consuming and may compromise functionality of flexible substrates under tension. Here, we introduce a bladecoated perovskite thin film on flexible ITO-coated PET annealed via rapid thermal annealing (RTA) that reduces post-deposition processing time from ~150 s to ~14 s. As a result, performance was not sacrificed for scalability as a perovskite solar cell was produced with a power conversion efficiency (PCE) of 14.58%.

14 SOLAR ENERGY↗
DOE OSTI2023

Molecular Beam Epitaxy of Monocrystalline GaAs on Water-Soluble NaCl Thin Films

The goal of this project was to demonstrate the feasibility of employing an epitaxial NaCl thin film as a water-soluble release layer for III-V photovoltaic devices and GaAs substrate reuse. Over the course of this project efforts were focused on: 1) achieving crystalline NaCl thin films on GaAs (100) substrate, 2) exploring the growth parameters for subsequent GaAs on NaCl thin films in effort to improve crystallinity of the semiconductor layer, 3) deposition and removal of single crystalline solar cell devices from the parent substrate, and 4) improving morphology and reducing large scale defects in the removed layers to fabricate a working a solar cell device. There was no previous work on direct integration of GaAs/NaCl/GaAs heterostructures at the time of this study. We used molecular beam epitaxy (MBE) to deposit both the alkali halide salt and subsequent III-V material in the same chamber, with no vacuum break. Single crystalline GaAs films were achieved on NaCl layers through careful tuning of the growth parameters and exposure to the reflection high energy electron diffraction (RHEED) beam. Dissolution of the NaCl layer in water provided rapid release of the semiconductor layer from the substrate. Monocrystalline solar cells were grown on the III-V templates using MBE and dynamic hydride vapor phase epitaxy (HVPE). However, the extended time at elevated temperatures required for the cell growth resulted in large area defects from fusion of the semiconductor overlayer to the substrate, causing shorts in fabricated devices. By changing the way that the template layer was grown, the density of these defects could be reduced. Unfortunately, the defects were not reduced to a level allowing for fabrication of a working device.

14 SOLAR ENERGY↗
DOE OSTI2019

STEM characterization of solar cells

Photovoltaic (PV) devices consisting of a thin-film CdTe absorber layer on glass support have long been considered one of the leading technologies for reaching the Department of Energy’s 2030 cost target of less than 0.03/kWh. Here, the currently used device architectures include a thin transparent conductive oxide (TCO) on top of the glass superstrate following by very thin (<100 nm) polycrystalline emitter layer, typically CdS or more recently MgZnO (MZO). The CdTe absorber layer is usually up to 4 µm thick and polycrystalline, followed by the back contact (Figure 1). Typical CdTe thin-film layers are formed from rapid deposition techniques, such as close-spaced sublimation (CSS) or high-rate vapor-transport deposition (HRVDT). Both processes result in a polycrystalline CdTe photo-absorbing film, and such devices can be manufactured cheaply and efficiently at large scale. Record cell efficiencies as high as 22.1% have been demonstrated. However, such cell performances are still far from the theoretical limits (~30% for CdTe), and improvements have mostly been due to better light collection, rather than improvements in absorber conversion efficiency. The remaining obstacles to further improving these devices toward their theoretical limits concern improvements in the fill factor (FF) and, more importantly, open-circuit voltage (V oc ), which is still far from its limit. In fact, it is widely accepted that V oc is the limiting factor since it reaches only about 60% of the CdTe bandgap. This is in contrast to GaAs solar cells, which have reached a V oc of 80% of the bandgap. The reasons for this discrepancy have been identified as the low p -type doping concentrations of CdTe due to the formation of compensating defect states, a poor p-n junction, and the need for better backside ohmic contacts. High interfacial defect density at grain boundaries (GBs) and intragrain dislocations is also one of the main concerns because they contribute to the dark current. This is supported by the study of single-crystal-based CdTe solar cells that were able to reach Voc in excess of 1 V.

14 SOLAR ENERGY↗
DOE OSTI2020

The Future of Renewable Energy Generation: Photovoltaic Materials

There are myriad ways to harness solar energy, including, but not limited to: solar thermal, solar fuels, and photovoltaics (PV). Across the portfolio of solar energy technologies, PV is unique in that collected photons are directly converted to electricity. Traditionally, the dominant materials in PV are also the dominant semiconductor and optoelectronic materials. The cost of solar energy from PV is a product of a complex combination of non-material related factors, known as soft costs, e.g., permitting, zoning, and of balance-of-systems (BOS) costs, like inverters or other components needed to utilize cells and modules. While the soft costs are due to administrative/regulatory concerns, BOS costs are driven by details of cell/module fabrication, mounting, power electronics, and other concerns, which touch on a range of basic material science issues. There is some overlap of BOS and soft cost, as a lighter weight solar panel can reduce installations costs, as an example. At the PV-system level, the materials considerations span both electronic and structural components. The focus of this paper is the solar cell, which is the minimum operational unit device that converts light into electricity.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Codesigning Alloy Compositions of CdSe y Te 1− y Absorbers and Mg x Zn 1− x O Contacts to Increase Solar Cell Efficiency

Thin‐film solar cells such as CdTe are a major commercial photovoltaic technology, with more than 25 GW installed worldwide and levelized costs of electricity competitive with fossil fuels. Further progress may result from integrating CdSe y Te 1− y absorbers with Mg x Zn 1− x O contacts, but the device efficiency is difficult to maximize due to coupled dependence on chemical composition of both alloys. Herein, a high‐throughput approach is demonstrated to codesign chemical compositions in alloyed Mg x Zn 1− x O/CdSe y Te 1− y thin‐film solar cells, using combinatorial libraries of PV devices with orthogonal composition gradients in CdSe y Te 1− y absorbers and Mg x Zn 1− x O contacts. It is found that the solar cell performance is a strong and coupled function of both elemental compositions, with efficiency up to 17.7% ( V OC = 836 mV, fill factor = 69%, J SC = 30.6 mA cm −2 ) at atomic compositions of Mg/(Mg + Zn) ≈18% and average Se/(Se + Te) ≈4%. These performance trends among >100 devices are explained by >100 ns lifetime of photoexcited charge carriers at the Mg x Zn 1− x O/CdSe y Te 1− y interface where strong Se accumulation is also observed. This study reports the optimal compositions of the commercially relevant Mg x Zn 1− x O/CdSe y Te 1− y solar cells and demonstrates a general approach to codesigning performance of alloyed thin‐film solar cells and other optoelectronic devices.

14 SOLAR ENERGY↗
DOE OSTI2020

Patterning Metal Grids for GaAs Solar Cells with Cracked Film Lithography: Quantifying the Cost/Performance Tradeoff

We introduce cracked film lithography (CFL) as a way to reduce the cost of III–V photovoltaics (PV). We spin-coat nanoparticle suspensions onto GaAs thin-film device stacks. The suspensions dry in seconds, forming crack networks that we use as templates through which to electroplate the solar cells’ front metal grids. For the first time, we show that heating the crack template allows it to flow and refill cracks, which decreases crack footprint and improves final grid transmittance. We demonstrate 24.7%-efficient single-junction GaAs solar cells using vacuum-free CFL grids. These devices are only 1.7% (absolute) less efficient than the baseline grids patterned by photolithography with the loss mostly resulting from the reduced transparency of the CFL pattern. Additional optimization could decrease this difference. Initial cost modeling suggests that CFL is more scalable than photolithography: In particular, CFL’s lower materials and equipment costs could greatly reduce the levelized cost of electricity of III–V PV at scale, a potential step toward terrestrial deployment.

14 SOLAR ENERGY↗
DOE OSTI2022

Optimizing the Orientation of Solar Photovoltaic Systems Considering the Effects of Irradiation and Cell Temperature Models with Dust Accumulation

To cope with the growing installation capacities of solar photovoltaic (PV) systems in desert areas, it is necessary to revisit the energy production models and the optimal angles of PV panels given the significant impacts of ambient temperature, wind speed, dust accumulation, and cleaning frequency. In this study, these four factors are examined for four PV technologies (polycrystalline, microcrystalline, monocrystalline, and thin-film) at three cities in Jordan, Egypt, and Tunisia using precise ground-level meteo-solar measurements. Different models are compared to estimate the diffuse irradiance, as well as account for the effects of operating temperature, wind speed, and dust accumulation on energy production and optimal tilt and azimuth angles of the panels. The results reveal 1.5 % higher energy production estimates using the isotropic model, compared to the anisotropic model in the summer months. Considering the cooling effect of wind speed decreases the operating cell temperature drops by up to 7.05 % for thin film panels. The annually produced energy decreases by 24 % when the panels are cleaned bi-monthly. When the dust accumulation rate doubles, the energy production decreases by ~10 % for all studied cases. Also, the variations in optimal tilt and azimuth angles with dust accumulation rate are within ~3.0 degrees .

14 SOLAR ENERGY↗
DOE OSTI2025

Selective Isolation of Surface Grain Boundaries by Oxide Dielectrics Improves Cd(Se,Te) Device Performance

Cd(Se,Te) photovoltaics (PV) are the most widely deployed thin-film solar technology globally, yet continued efficiency improvements are stymied by challenges at the device hole contacts. The inclusion of solution-processed oxide layers such as AlGaO x in the contact stack has yielded improved device open-circuit voltages (V OC ) and fill factors (FF). However, contradictory mechanisms by which these layers improve the device properties have been proposed by the research community. We demonstrate in this work that an underappreciated property of such spin-coated layers is the preferential deposition at grain boundaries, a process that isolates the grain boundaries during contact metallization. The effects of grain-boundary isolation are probed by varying the coverage of solution-processed AlGaO x “barrier” layers on the Cd(Se,Te) surface, quantified by scanning Auger microscopy. Examining coverage-dependent V OC and FF, it was observed that isolating the grain boundaries during metallization is sufficient to prevent damage to the absorber that occurs in devices lacking a barrier layer, while additional coverage contributes to the increased series resistance. Such an effect is agnostic to the material used as a barrier layer, as long as the material does not itself damage the absorber. Spin-coated SiO x was used in place of AlGaO x for an equally beneficial effect. This grain-boundary isolation phenomenon is also observed during Mo deposition and in absorbers that have been contacted with a nitrogen-doped ZnTe layer. The mechanisms by which metallization may degrade the absorber are discussed, as are contact design strategies leveraging barrier layers, which may lead to improved device efficiencies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2005

Cu(In,Ga)S2, Thin-Film Solar Cells Prepared by H2S Sulfurization of CuGa-In Precursor

Thin-film CuInS2 solar cell is the leading candidate for space power because of bandgap near the optimum value for AM0 solar radiation outside the earth's atmosphere, excellent radiation hardness, and freedom from intrinsic degradation mechanisms unlike a-Si:H cells. Ultra-lightweight thin-film solar cells deposited on flexible polyimide plastic substrates such as Kapton(trademark), Upilex(trademark), and Apical(trademark) have a potential for achieving specific power of 1000 W/kg, while the state-of-art specific power of the present day solar cells is 66 W/kg. This paper describes the preparation of Cu-rich CuIn(sub 1-x)Ga(sub x)S(sub 2) (CIGS2) thin films and solar cells by a process of sulfurization of CuGa-In precursor similar to that being used for preparation of large-compact-grain CuIn(sub 1-x)Ga(sub x)Se2 thin films and efficient solar cells at FSEC PV Materials Lab.

Dhere, Neelkanth G.↗
NASA NTRS1996

Review of recent thermophotovoltaic (TPV) research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV cells and rare earth yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to .7) within the emission bands. The .75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 13% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗
NASA NTRS1995

Review of Recent Thermophotovoltaic (TPV) Research at Lewis Research Center

Thermophotovoltaic (TPV) research at NASA Lewis Research Center that began in the late 1980's is reviewed. This work has been concentrated on low bandgap indium gallium arsenide (InGaAs) PV calls and rare earth - yttrium aluminum garnet (YAG) thin film selective emitters, as well as, TPV system studies. An emittance theory has been developed for the thin film emitters. Experimental spectral emittance results for erbium Er-YAG and holmium Ho-YAG show excellent emittance (greater than or equal to 0.7) within the emission bands. The 0.75 eV InGaAs PV cells fabricated at Lewis have excellent quantum efficiency. An efficiency of 130% has been measured for this cell coupled to an Er-YAG selective emitter and a short pass IR filter.

Chubb, Donald L.↗