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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_πL$ product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.

42 ENGINEERING↗
DOE OSTI2022

Thermal Modulation of Gigahertz Surface Acoustic Waves on Lithium Niobate

Surface-acoustic-wave (SAW) devices have a wide range of applications in microwave signal processing. Microwave SAW components benefit from higher quality factors and much smaller crosstalk when compared to their electromagnetic counterparts. Efficient routing and modulation of SAWs are essential for building large-scale and versatile acoustic wave circuits. Here, we demonstrate integrated thermoacoustic modulators using two SAW platforms: bulk lithium niobate and thin-film lithium niobate on sapphire. In both approaches, the gigahertz-frequency SAWs are routed by integrated acoustic waveguides, while on-chip microheaters are used to locally change the temperature, and thus, control the phase of the SAW. Using this approach, we achieve phase changes of over 720° with the responsibility of 2.6°/mW for bulk lithium niobate and 0.52°/mW for lithium niobate on sapphire. Furthermore, we demonstrate amplitude modulation of SAWs using acoustic Mach-Zehnder interferometers. Our thermoacoustic modulators can enable reconfigurable acoustic signal processing for next-generation wireless communications and microwave systems.

42 ENGINEERING↗
DOE OSTI2022

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. Here we report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 (O,S) 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Writable spin wave nanochannels in an artificial-spin-ice-mediated ferromagnetic thin film

We report magnonics, which employs spin-waves to transmit and process information, is a promising venue for low-power data processing. One of the major challenges is the local control of the spin-wave propagation path. Here, we introduce the concept of writable magnonics by taking advantage of the highly flexible reconfigurability and rewritability of artificial spin ice systems. Using micromagnetic simulations, we show that globally switchable spin-wave propagation and locally writable spin-wave nanochannels can be realized in a ferromagnetic thin film underlying an artificial pinwheel spin ice. The rewritable magnonics enabled by reconfigurable spin wave nanochannels provides a unique setting to design programmable magnonic circuits and logic devices for ultra-low power applications.

42 ENGINEERING↗
DOE OSTI2020

A sensitive and robust thin-film x-ray detector using 2D layered perovskite diodes

Solid-state radiation detectors, using crystalline semiconductors to convert radiation photons to electrical charges, outperform other technologies with high detectivity and sensitivity. Here, we demonstrate a thin-film x-ray detector comprised with highly crystalline two-dimensional Ruddlesden-Popper phase layered perovskites fabricated in a fully depleted p-i-n architecture. It shows high diode resistivity of 10 12 ohm·cm in reverse-bias regime leading to a high x-ray detecting sensitivity up to 0.276 C Gy air –1 cm –3 . Such high signal is collected by the built-in potential underpinning operation of primary photocurrent device with robust operation. The detectors generate substantial x-ray photon–induced open-circuit voltages that offer an alternative detecting mechanism. Furthermore, our findings suggest a new generation of x-ray detectors based on low-cost layered perovskite thin films for future x-ray imaging technologies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Materials loss measurements using superconducting microwave resonators

The performance of superconducting circuits for quantum computing is limited by materials losses. In particular, coherence times are typically bounded by two-level system (TLS) losses at single photon powers and millikelvin temperatures. The identification of low loss fabrication techniques, materials, and thin film dielectrics is critical to achieving scalable architectures for superconducting quantum computing. Superconducting microwave resonators provide a convenient qubit proxy for assessing performance and studying TLS loss and other mechanisms relevant to superconducting circuits such as non-equilibrium quasiparticles and magnetic flux vortices. In this review article, we provide an overview of considerations for designing accurate resonator experiments to characterize loss, including applicable types of losses, cryogenic setup, device design, and methods for extracting material and interface losses, summarizing techniques that have been evolving for over two decades. Results from measurements of a wide variety of materials and processes are also summarized. Finally, we present recommendations for the reporting of loss data from superconducting microwave resonators to facilitate materials comparisons across the field.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Universal topological quantum computation with strongly correlated Majorana edge modes

Abstract Majorana-based quantum gates are not complete for performing universal topological quantum computation while Fibonacci-based gates are difficult to be realized electronically and hardly coincide with the conventional quantum circuit models. In reference Hu and Kane (2018 Phys. Rev. Lett. 120 066801), it has been shown that a strongly correlated Majorana edge mode in a chiral topological superconductor can be decomposed into a Fibonacci anyon τ and a thermal operator anyon ɛ in the tricritical Ising model. The deconfinement of τ and ɛ via the interaction between the fermion modes yields the anyon collisions and gives the braiding of either τ or ɛ . With these braidings, the complete members of a set of universal gates, the Pauli gates, the Hadamard gate and extra phase gates for one-qubit as well as controlled-NOT (CNOT) gate for two-qubits, are topologically assembled. Encoding quantum information and reading out the computation results can be carried out through electric signals. With the sparse-dense mixed encodings, we set up the quantum circuit where the CNOT gate turns out to be a probabilistic gate and design the corresponding devices with thin films of the chiral topological superconductor. As an example of the universal topological quantum computing, we show the application to Shor’s integer factorization algorithm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Deep learning of accurate force field of ferroelectric HfO 2

The discovery of ferroelectricity in HfO 2 -based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density nonvolatile memories. The functional performances of ferroelectrics are intimately related to their dynamic responses to external stimuli such as electric fields at finite temperatures. Molecular dynamics is an ideal technique for investigating dynamical processes on large length and time scales, though its applications to new materials are often hindered by the limited availability and accuracy of classical force fields. Here we present a deep neural network–based interatomic force field of HfO 2 learned from ab initio data using a concurrent learning procedure. The model potential is able to predict structural properties such as elastic constants, equation of states, phonon dispersion relationships, and phase transition barriers of various hafnia polymorphs with accuracy comparable with density functional theory calculations. Here, the validity of this model potential is further confirmed by the reproduction of experimental sequences of temperature-driven ferroelectric-paraelectric phase transitions of HfO 2 with isobaric-isothermal ensemble molecular dynamics simulations. We suggest a general approach to extend the model potential of HfO 2 to related material systems including dopants and defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Fast External Quantum Efficiency Measurements of Photovoltaic Modules

The external quantum efficiency (EQE) or associated spectral response is widely used to evaluate the performance of photovoltaics, light emitting diodes, photodetectors, photodiodes, semiconductor lasers, laser-induced refrigeration of solids etc. For photovoltaic (PV) devices, The EQE is used to determine the spectral mismatch correction that is used to convert a performance measurement from a non-ideal simulator spectrum to a standard spectrum in PV device calibrations. Moreover, EQE can provide important insight into the physics of a PV device. For instance, the EQE shape can be used to infer mechanisms limiting the performance of the device. However, EQE measurements of full-size PV modules remain a challenge in the PV community due to rare availability of reliable module QE measurement tools worldwide and the size and complexity of module architecture that comprises several cells connected in strings (series or/and parallel). Here, we use a customized nondestructive tool made of high-power light emitting diodes to perform high-throughput EQE measurements on PV modules. Circuit simulations show that the measurement system can safely be used to measure both crystalline silicon and thin film-based PV modules with series connected cells without the risk of damage through reverse bias. In addition, EQE mapping combined with electroluminescence show a strong correlation and provide a way to determine both spatial non-uniformity of the spectral response and defects/degradation effects across the module.

PV module↗
DOE OSTI2022

Material aspects of giga-Hertz ZnO TFTs for wireless systems

Abstract Having enabled high-value application capabilities through mass production of flat-panel displays, X-ray imagers, and solar panels, Large-Area Electronics (LAE) holds potential to open new frontiers in wireless applications for the Internet of Things and 5G/6G, by enabling unprecedented spatial control and power efficiency through large size and flexible form factor of radiative apertures. However, this requires boosting operation frequencies from the traditional limits in the range of 10–100’s of mega-Hertz to multi giga-Hertz. In this paper, we discuss critical device metrics, to characterize zinc-oxide (ZnO) thin-film transistor (TFT) operation frequency for both active (for signal amplification) and passive components in LAE-based circuits and systems. We then describe the key structural and material approaches towards recently demonstrated LAE-based giga-Hertz wireless systems employing ZnO TFTs. Bringing LAE to the giga-Hertz regime provides a path towards flexible and meter-scale monolithic integrated wireless systems. Graphical abstract

Ma, Yue (ORCID:0000000186724090)↗
DOE OSTI2024

Wafer-Scale MgB 2 Superconducting Devices

Progress in superconducting device and detector technologies over the past decade has realized practical applications in quantum computers, detectors for far-infrared telescopes, and optical communications. Superconducting thin-film materials, however, have remained largely unchanged, with aluminum still being the material of choice for superconducting qubits and niobium compounds for high-frequency/high kinetic inductance devices. Magnesium diboride (MgB 2 ), known for its highest transition temperature (T c = 39 K) among metallic superconductors, is a viable material for elevated temperature and higher frequency superconducting devices moving toward THz frequencies. However, difficulty in synthesizing wafer-scale thin films has prevented implementation of MgB 2 devices into the application base of superconducting electronics. Here, we report ultrasmooth (<0.5 nm root-mean-square roughness) and uniform MgB 2 thin (<100 nm) films over 100 mm in diameter and present prototype devices fabricated with these films demonstrating key superconducting properties including an internal quality factor over 10 4 at 4.5 K and high tunable kinetic inductance in the order of tens of pH/sq in a 40 nm thick film. This advancement will enable development of elevated temperature, high-frequency superconducting quantum circuits, and devices.

Boron↗
DOE OSTI2026

Tantalum alloy–based resonators for quantum information systems

Utilizing tantalum (Ta) in superconducting circuits has led to significant improvements, such as high qubit lifetime (T 1 ) and quality factors in both qubits and resonators, suggesting that material optimization plays an important role in the development of superconducting circuits. Thus we here explore superconducting gap engineering in Ta-based devices as a powerful strategy for expanding the range of suitable host materials. By alloying 20 atomic percent (at.%) hafnium into Ta thin films, we achieve a superconducting transition temperature (T c ) of 6.09 K as observed in direct current (DC) transport measurements, reflecting an increase in the superconducting gap. We systematically vary deposition conditions to control film orientation and transport properties of Ta-Hf alloy thin films. We then confirm the enhancement in T c via microwave measurements at millikelvin temperatures. We verify the ~40 increase in T c relative to bare Ta devices, while the loss contributions from two-level systems and quasi-particles remain unchanged in the low temperature regime. These findings emphasize the promise of material engineering in superconducting circuits and point to many potential material candidates for further exploration.

Ta-Hf alloy thin films↗
DOE OSTI2023

A superconducting nanowire binary shift register

We present a design for a superconducting nanowire binary shift register, which stores digital states in the form of circulating supercurrents in high-kinetic-inductance loops. Adjacent superconducting loops are connected with nanocryotrons, three-terminal electrothermal switches, and fed with an alternating two-phase clock to synchronously transfer the digital state between the loops. A two-loop serial-input shift register was fabricated with thin-film NbN and a bit error rate of less than 10 –4 was achieved, when operated at a maximum clock frequency of 83 MHz and in an out-of-plane magnetic field of up to 6 mT. A shift register based on this technology offers an integrated solution for low-power readout of superconducting nanowire single photon detector arrays and is capable of interfacing directly with room-temperature electronics and operating unshielded in high magnetic field environments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Phonon confinement and interface lattice dynamics of ultrathin high- k rare earth sesquioxide films: the case of Eu 2 O 3 on YSZ(001)

The spatial confinement of atoms at surfaces and interfaces significantly alters the lattice dynamics of thin films, heterostructures and multilayers. Ultrathin films with high dielectric constants (high-k) are of paramount interest for applications as gate layers in current and future integrated circuits. Here we report a lattice dynamics study of high-k Eu 2 O 3 films with thicknesses of 21.3, 2.2, 1.3, and 0.8 nm deposited on YSZ(001). The Eu-partial phonon density of states (PDOS), obtained from nuclear inelastic scattering, exhibits broadening of the phonon peaks accompanied by up to a four-fold enhancement of the number of low-energy states compared to the ab initio calculated PDOS of a perfect Eu 2 O 3 crystal. Our analysis demonstrates that while the former effect reflects the reduced phonon lifetimes observed in thin films due to scattering from lattice defects, the latter phenomenon arises from an ultrathin EuO layer formed between the thin Eu 2 O 3 film and the YSZ(001) substrate. Thus, our work uncovers another potential source of vibrational anomalies in thin films and multilayers, which has to be cautiously considered.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4',4"-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and -2.64 V on the negative scan. A high ON/OFF current ratio (>10 6 for the positive scan and 10 4 -10 6 for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor-acceptor system, which provided the effective charge-transfer channels for injected charge carriers. Furthermore, this work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.

2D covalent organic framework film↗
DOE OSTI2023

Heterogeneous integration of an electro-optical platform

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Kodigala, Ashok↗
DOE OSTI2023

Sensitive and robust thin film X-ray detector using 2D layered perovskite diodes

A radiation detector includes a p-i-n architecture including a p-type contact layer, an n-type contact layer, and an intrinsic layer between the p-type contact layer and the n-type contact layer. The intrinsic layer includes a thin film comprising a highly crystalline 2D layered perovskite material. The radiation detectors according to embodiments of the present disclosure generate high open circuit voltages, have good detecting photon density limits and high sensitivities, and can be self-powered.

Tsai, Hsinhan↗