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At least 73 records · Page 4

Direct Imaging of Asymmetric Interfaces and Electrostatic Potentials inside a Hafnia–Zirconia Ferroelectric Nanocapacitor

In hafnia-based thin-film ferroelectric devices, chemical phenomena during growth and processing, such as oxygen vacancy formation and interfacial reactions, appear to strongly affect device performance. However, the correlation between the structure, chemistry, and electrical potentials at the nanoscale in these devices is not fully known, making it difficult to understand their influence on device properties. Here, we directly image the composition and electrostatic potential with nanometer resolution in the cross section of a nanocrystalline W/Hf 0.5 Zr 0.5 O 2−δ (HZO)/W ferroelectric capacitor using multimodal electron microscopy. This reveals a 1.4 nm wide tungsten suboxide interfacial layer formed at the bottom interface during fabrication, which introduces a potential dip and leads to asymmetric switching fields. Additionally, we compare the measured potentials to DFT calculations and find it is nearly 3 V lower than expected in the HZO, which appears to be caused by oxygen vacancies and a resulting negative built-in potential. In conclusion, these chemical and electrostatic details are important to characterize and tune to achieve high-performance ferroelectric devices.

Defects in solids↗

Defects in electro-optically active polymer solids

There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).

Martin, David C.↗

Power System Options Evaluated for the Radiation and Technology Demonstration Mission

The Radiation and Technology Demonstration (RTD) Mission is under joint study by three NASA Centers: the NASA Johnson Space Center, the NASA Goddard Space Flight Center, and the NASA Glenn Research Center at Lewis Field. This Earth-orbiting mission, which may launch on a space shuttle in the first half of the next decade, has the primary objective of demonstrating high-power electric thruster technologies. Secondary objectives include better characterization of Earth's Van Allen trapped-radiation belts, measurement of the effectiveness of the radiation shielding for human protection, measurement of radiation effects on advanced solar cells, and demonstration of radiation-tolerant microelectronics. During the mission, which may continue up to 1 year, the 2000-kg RTD spacecraft will first spiral outward from the shuttle-deployed, medium-inclination, low Earth orbit. By the phased operation of a 10-kW Hall thruster and a 10-kW Variable Specific Impulse Magneto-Plasma Rocket, the RTD spacecraft will reach a low-inclination Earth orbit with a radius greater than five Earth radii. This will be followed by an inward spiraling orbit phase when the spacecraft deploys 8 to 12 microsatellites to map the Van Allen belts. The mission will conclude in low Earth orbit with the possible retrieval of the spacecraft by the space shuttle. A conceptual RTD spacecraft design showing two photovoltaic (PV) array wings, the Hall thruster with propellant tanks, and stowed microsatellites is presented. Early power system studies assessed five different PV array design options coupled with a 120-Vdc power management and distribution system (PMAD) and secondary lithium battery energy storage. Array options include (1) state-of-the-art 10-percent efficient three-junction amorphous SiGe thin-film cells on thin polymer panels deployed with an inflatable (or articulated) truss, (2) SCARLET array panels, (3) commercial state-of-the-art, planar PV array rigid panels with 25-percent efficient, three-junction GaInP2/GaAs/Ge solar cells, (4) rigid panels with 25-percent efficient, three-junction GaInP2/GaAs/Ge solar cells, in a 2 -concentrator trough configuration, and (5) thin polymer panels with 25-percent efficient, three-junction GaInP2/GaAs/Ge solar cells deployed with an inflatable (or articulated) truss. To assess the relative merits of these PV array design options, the study group developed a dedicated Fortran code to predict power system performance and estimate system mass. This code also modeled Earth orbital environments important for accurately predicting PV array performance. The most important environmental effect, solar cell radiation degradation, was calculated from electron-proton fluence input from the industry standard AE8/AP8 trapped radiation models and the concept of damage equivalence. Power systems were sized to provide 10 kW of thruster power and approximately 1 kW of spacecraft power at end of life. Of the five PV array design options, the option 1 (thin-film cells) power system was the most massive 590 kg, whereas the option 4 (trough concentrator) power system was the lightest 260 kg. Arguably, the lowest cost would come from the option 3 (commercial array panels) power system with an acceptable, albeit greater, system mass of 320 kg. Predicted power system performance during the spiral-out mission phase is shown the preceding graph for the option 5 (flexible-panel) array. From the results, the radiation-induced power loss over time is evident as the spacecraft slowly spirals outward through the trapped proton belt. The importance of the spiral trip time is also evident in the two curves representing 74-day and 182-day spiral-out periods. The longer spiral time introduces a beginning-of-life power oversizing penalty greater than 1 kW. Future studies will analyze power system performance and mass with a 50-Vdc power management and distribution architecture favorable to the VASIMR thruster and longer missions.

Kerslake, Thomas W.↗

Nanoscopic Plugs Block Hydrogen Crossover in Submicron Thick Proton-Conducting SiO 2 Membranes for Water Electrolysis

Zero-gap electrolyzers based on submicron thick proton-conducting oxide membranes (POMs) represent a promising approach to increasing the efficiency of H 2 production from water electrolysis while moving away from conventional perfluorosulfonic acid (PFSA) membranes. A critical barrier to the commercialization of such electrolyzers is that the ultrathin nature of POMs, which is necessary to achieve low cell resistance, makes them more susceptible to defects that can lead to unacceptably high rates of H 2 crossover. Herein, we demonstrate an approach to mitigate this problem through selective deposition of carbon-containing silicon oxide (SiO x C y ) “nanoplugs” into the defects of submicron thick SiO 2 membranes using a facile electrochemically mediated deposition process. Selective deposition of nanoplugs within the defects was verified by multiple characterization techniques, while scanning electrochemical microscopy (SECM) was used to confirm selective plugging of H 2 -crossover hotspots associated with defects at identical locations. Thanks to the use of nanoplugs, the H 2 permeance of 250 nm thick SiO 2 membranes was reduced by 5 to 6 orders of magnitude compared to the unmodified atomic layer deposition (ALD) SiO 2 membranes while having negligible impact on the ionic resistance of the membrane. These plug-modified membranes also enabled safe and stable operation of a zero-gap full cell electrolysis cell, in contrast to cells lacking nanoplugs that produced anode effluent streams having H 2 concentrations near or exceeding the lower flammability limit (LFL) of H 2 . Furthermore, beyond water electrolysis, this defect-sealing strategy has the potential to be broadly implemented in other applications, such as fuel cells and flow batteries, offering a versatile solution to mitigate crossover-related performance losses.

ALD SiO2↗

Atomic-Scale Characterization and Electronic Properties of Gold-Capped Niobium Films for Superconducting Qubits

Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb-Au, ex situ Nb-Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual NbxOy layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.

Makita, Junki [MIT; Temple U.] (ORCID:000000026889↗

Interface diagnostics platform for thin-film solid-state batteries

Understanding the impedances of battery materials and their interfaces remains a major challenge, usually addressed by electrochemical impedance spectroscopy (EIS) where frequency-dependent complex impedance of full battery cells is measured and then modeled by a network of connected electrical elements. As conventionally applied, this approach produces ambiguity in that (1) multiple different network configurations may fit the data convincingly and (2) the method offers no direct association of the electrical elements with physical features of the battery. Here we present a new methodology that resolves both sources of ambiguity, enabled by expanding the experimental scope to directly inform the configuration of elements and their parameters in the network model. We demonstrate this methodology using thin film fabrication of solid state battery devices patterned by shadow masked sputter deposition, so that diagnostic devices corresponding to individual interface and material components can be fabricated simultaneously with full cell batteries. EIS models for the diagnostic devices can then be connected to form full cell networks whose topology matches the well-known physical configuration of the battery. When connected in this way, the full network model – made from connecting the diagnostic device EIS models – fits the full cell EIS data. For the case of a thin film solid state battery composed of amorphous silicon anode, lithium phosphorus oxynitride (LiPON) solid electrolyte, and lithium vanadium oxide (Li x V 2 O 5 ) cathode, we show that the approach allows us to identify ionic impedance/conductivity of the cathode/electrolyte as a limiting impedance and the anode/electrolyte interface cycling instability as a primary degradation factor.

25 ENERGY STORAGE↗

Bypassing sulfides: comparing the morphology and performance of solution processed Cu(In,Ga)Se 2 films prepared via two selenide molecular precursor routes

Solution-processing of thin-film photovoltaics offers an alternative to vacuum-deposition based approaches. The amine–thiol reactive solvent system has become a focal point for the solution-processing of chalcogenide species, owing to the convenience of precursor preparation and comparatively high performance of prepared devices. Selenide species prepared via the amine–thiol route typically progress through a sulfide intermediate phase, and as such are commonly afflicted with sulfur and carbon impurities along- side the presence of a carbonaceous fine-grained layer. Here, two routes of preparing films directly to a selenide phase are examined; first by the co-dissolution of selenium in an amine–thiol solution and second via the novel use of reactive alkylammonium polyselenides. Lamella are cut from these selenide precursor films and final devices, and STEM-EDX and TEM are used to characterize film morphology and secondary phases. A champion device efficiency of 11.2% is reported for the novel polyselenide route, and clear paths of improvement are identified.

36 MATERIALS SCIENCE↗

Development of an atomic layer deposition system for deposition of alumina as a hydrogen permeation barrier

Tritium permeation into and through materials poses a critical challenge for the development of nuclear fusion reactors. Minimizing tritium permeation is essential for the safe and efficient use of available fuel supplies. In this work, we present the design, construction, and validation of custom atomic layer deposition (ALD) and deuterium permeation measurement systems aimed at developing thin-film hydrogen permeation barriers. Using the ALD system, we deposited conformal $\mathrm{Al}_{2}\mathrm{O}_{3}$ films on copper foil substrates and characterized their growth behavior, morphology, and composition. ALD growth rates of ∼1.1 Å/cycle were achieved for temperatures between 100 ∘ C and 210 ∘ C. Permeation measurements on bare and alumina coated copper foils revealed a significant reduction in deuterium flux with the addition of a ∼10 nm $\mathrm{Al}_{2}\mathrm{O}_{3}$ layer. While bare copper followed diffusion-limited transport consistent with Sievert’s law, the alumina-coated samples exhibited surface-limited, pore-mediated transport with linear pressure dependence. Arrhenius analysis showed distinct differences in activation energy for the two transport regimes, and permeation reduction factors exceeding an order of magnitude were observed. These results demonstrate the potential of ALD-grown $\mathrm{Al}_{2}\mathrm{O}_{3}$ films as effective hydrogen isotope barriers and provide a foundation for future studies on film optimization and integration into fusion-relevant components.

atomic layer deposition↗

Mechanism-Resolved PFM of Ferroionic and Ferroelectric Responses in Thickness-Gradient Hf 0.5 Zr 0.5 O 2 Libraries

Resolving growth mechanisms and thickness evolution of functional properties is one of the key tasks in materials discovery and optimization involving thin-film materials, traditionally requiring significant experimental budgets. Here we introduce the combination of thickness-gradient libraries and automated scanning probe microscopy as a systematic pathway to elucidate growth modes and disentangle ferroelectric and electrochemical contributions in ferroelectric thin films. As a model system, we explore the Hf 0.5 Zr 0.5 O 2 (HZO) gradient thin films grown on La x Sr 1-x MnO 3 (LSMO) bottom electrode thin films. Automated piezoresponse force microscopy, spectroscopy, and lithography reveals that irreversible topographic deformation arises from electrochemical activity at the LSMO surface, whereas reversible phase inversion in HZO reflects ferroelectric switching. Automated topography height-map scans are used to further quantify nucleation density, particle-size evolution, and roughness correlations across the thickness-gradient, demonstrating that improved plume stabilization during growth suppresses interfacial reactions and promotes dense, fine-grained HZO conducive to ferroelectric phase formation. This combined materials-engineering and automated-SPM framework establishes a platform for high-throughput, mechanism-resolved characterization of ferroionic and ferroelectric responses in complex oxide films.

FOS: Physical sciences↗

Thin-film diffusion brazing of titanium alloys

A thin film diffusion brazing technique for joining titanium alloys by use of a Cu intermediate is described. The method has been characterized in terms of static and dynamic mechanical properties on Ti-6Al-4V alloy. These include tensile, fracture toughness, stress corrosion, shear, corrosion fatigue, mechanical fatigue and acoustic fatigue. Most of the properties of titanium joints formed by thin film diffusion brazing are equal or exceed base metal properties. The advantages of thin film diffusion brazing over solid state diffusion bonding and brazing with conventional braze alloys are discussed. The producibility advantages of this process over others provide the potential for producing high efficiency joints in structural components of titanium alloys for the minimum cost.

Mikus, E. B.↗

Failure analysis of thin-film amorphous-silicon solar-cell modules

A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

Kim, Q.↗

Construction and performance of a high-temperature-superconductor composite bolometer

A high-Tc superconducting bolometer has been constructed using a YBa2Cu3O(x) thin-film meander line 20 microns wide and 76,000 microns long, deposited on a SrTiO3 substrate. Radiation is absorbed by a thin film of Bi with well-characterized absorption properties deposited on a Si substrate in contact with the SrTiO3. At 1.8 Hz the measured bolometer response to a 500-K blackbody is 5.2 V/W (820 V/W extrapolated to dc). The impact of apparent nonohmic behavior at the transition is discussed, as are ways of reducing the observed 1/f noise. The response time is 32 s and is dominated by the heat capacity of the SrTiO3 substrate.

Brasunas, J. C.↗

Microwave characterization of high-temperature superconducting thin films using stripline resonators

A method was derived for the extraction of the surface resistivity (Rs) of high-Tc superconducting (HTS) thin films at microwave frequencies, using a stripline resonator circuit. Surface resistivity values were calculated by measuring the difference in Q-values of a stripline resonator configuration when an HTS thin film was substituted for one of the metallic ground planes. Cryogenic tests were completed for several stripline resonator structures, yielding accurate predictions of the HTS thin-film performance at frequencies between 3 and 26 GHz (in harmonics of approximately 3 GHz). These results were then used to illustrate the dependence of HTS surface resistivity on frequency and temperature in the microwave frequency band.

Macdonald, Alan D.↗

Multilayer and grazing incidence X-ray/EUV optics for astronomy and projection lithography; Proceedings of the Meeting, San Diego, CA, July 19-22, 1992

The present volume on multilayer and grazing incidence X-ray/EUV optics for astronomy and projection lithography discusses AXAF grazing incidence mirrors, the theory and high throughput optics of grazing incidence optics, multilayer mirror fabrication and characterization, and multilayer optics for X-ray projection lithography. Attention is given to the VETA-I X-ray detection system, a motion detection system for AXAF X-ray ground testing, image analysis of the AXAF VETA-I X-ray mirror, and optical constants from mirror reflectivities measured at synchrotrons. Topics discussed include the application of aberration theory to calculate encircled energy of Wolter I-II telescopes, W/C multilayers deposited on plastic films, nonspecular X-ray scattering from Si/Mo multilayers, and multilayer thin-film design as FUV polarizers. Also discussed are thin-film filter lifetesting results in the EUV, chromospheric and coronal observations with multilayer optics, present and future requirements of soft X-ray projection lithography, and the imaging Schwarzschild multilayer X-ray microscope.

Hoover, Richard B.↗

Applications of diamond films and related materials; Proceedings of the 1st International Conference, Auburn, AL, Aug. 17-22, 1991

The present conference discusses the nucleation and growth of diamond from hydrocarbons, the cutting tool performance of CVD thick-film diamond, the characterization of CVD diamond grinding powder, industrial applications of crystalline diamond-coated tools, standardized SEM tribometry of diamond-coated substrates, residual stress in CVD diamond films, the optical properties of CVD diamond films, polycrystalline diamond films for optical applications, and diamond growth on ferrous metals. Also discussed are ion beam-irradiation smoothing of diamond films, electronic circuits on diamond substrates, diamond-laminated surfaces for evaporative spray cooling, electron devices based on the unique properties of diamond, diamond cold cathodes, thin-film diamond microstructure applications, Schottky diodes from flame-grown diamond, diamond films for thermionic applications, methods of diamond nucleation and selective deposition, high-rate/large-area diamond film production, halogen-assisted diamond growth, the economics of diamond technology, and the optical and mechanical properties of diamondlike films.

Tzeng, Yonhua↗

Synthesis and Characterization of Poly (Arylene Ether Benzimidazole) Oligomers

Several poly(arylene ether benzimidazole) oligomers were prepared by the nucleophilic aromatic substitution reaction of a bisphenol benzimidazole and various alkyl-substituted aromatic bisphenols with an activated aromatic dihalide in N, N-dimethylacetarnide. Moderate to high molecular weight terpolymers were obtained in all cases, as shown by their inherent viscosities, which ranged from 0.50 to 0.87 dL g(sup -1). Glass transition temperatures (T(sub g)s) of polymer powders ranged from 267-280 C. Air-dried unoriented thin film T(sub g)s were markedly lower than those of the powders, whereas T(sub g)s of films dried in a nitrogen atmosphere were identical to those of the corresponding powders. In addition, air-dried films were dark amber and brittle, whereas nitrogen-dried films were yellow and creasable. Nitrogen-dried films showed slightly higher thin-film tensile properties than the air-dried films, as well.

Leonard, Michael J.↗

Thin and Thick Films Materials Based Interconnection Technology for 500 C Operation

Precious metal based thick-film material was used for printed wires, wire bond pads, test lead-attach, and conductive die-attach for high temperature (up to 500 C and beyond) chip level packaging. A SiC Shottky diode with a thin-film coated backside was attached to a ceramic substrate using precious metal based thick-film material as the electrically conductive bonding layer. After a 500-hour soak test in atmospheric oxygen, these basic interconnection elements, including attached test diode survived both electrically and mechanically. The electrical resistance of these interconnections (including thick-film printed wire/pad, bonded wire, and test lead attach) were low and stable at both room and elevated temperatures. The electrical resistance of the die-attach interface estimated by I-V characterization of the attached diode, during and after high temperature heat treatment, remained desirably low over the course of a 500-hour anneal. Further durability testing of this high temperature interconnection technology is also discussed.

Chen, Liang-Yu↗

Corner Wrinkling at a Square Membrane Due to Symmetric Mechanical Loads

Thin-film membrane structures are under consideration for use in many future gossamer spacecraft systems. Examples include sunshields for large aperture telescopes, solar sails, and membrane optics. The development of capabilities for testing and analyzing pre-tensioned, thin film membrane structures is an important and challenging aspect of gossamer spacecraft technology development. This paper presents results from experimental and computational studies performed to characterize the wrinkling behavior of thin-fi[m membranes under mechanical loading. The test article is a 500 mm square membrane subjected to symmetric comer loads. Data is presented for loads ranging from 0.49 N to 4.91 N. The experimental results show that as the load increases the number of wrinkles increases, while the wrinkle amplitude decreases. The computational model uses a finite element implementation of Stein-Hedgepeth membrane wrinkling theory to predict the behavior of the membrane. Comparisons were made with experimental results for the wrinkle angle and wrinkled region. There was reasonably good agreement between the measured wrinkle angle and the predicted directions of the major principle stresses. The shape of the wrinkle region predicted by the finite element model matches that observed in the experiments; however, the size of the predicted region is smaller than that determined in the experiments.

Blandino, Joseph R.↗