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This document provides instructions for performing laser-induced-damage-threshold tests and pass-fail certification tests on optical materials used in pulsed-laser systems. The optical materials to which these procedures apply include coated and uncoated optical substrates, laser crystals, Q-switches, polarizers, and other optical components employed in pulsed-laser systems.
.A relatively simple technique for characterizing an all-resonant intracavity continuous-wave (CW) solid-state Raman laser involves the use of ring-down spectroscopy. As used here, characterizing signifies determining such parameters as threshold pump power, Raman gain, conversion efficiency, and quality factors (Q values) of the pump and Stokes cavity modes. Heretofore, in order to characterize resonant-cavity-based Raman lasers, it has usually been necessary to manipulate the frequencies and power levels of pump lasers and, in each case, to take several sets of measurements. In cases involving ultra-high-Q resonators, it also has been desirable to lock pump lasers to resonator modes to ensure the quality of measurement data. Simpler techniques could be useful. In the present ring-down spectroscopic technique, one infers the parameters of interest from the decay of the laser out of its steady state. This technique does not require changing the power or frequency of the pump laser or locking the pump laser to the resonator mode. The technique is based on a theoretical analysis of what happens when the pump laser is abruptly switched off after the Raman generation reaches the steady state. The analysis starts with differential equations for the evolution of the amplitudes of the pump and Stokes electric fields, leading to solutions for the power levels of the pump and Stokes fields as functions of time and of the aforementioned parameters. Among other things, these solutions show how the ring-down time depends, to some extent, on the electromagnetic energy accumulated in the cavity. The solutions are readily converted to relatively simple equations for the parameters as functions of quantities that can be determined from measurements of the time-dependent power levels. For example, the steady-state intracavity conversion efficiency is given by G1/G2 1 and the threshold power is given by Pin(G2/G1)2, where Pin is the steady-state input pump power immediately prior to abrupt switch-off, G1 is the initial rate of decay of the pump field, and G2 is the final rate of decay of the pump field. Hence, it is possible to determine all the parameters from a single ring-down scan, provided that the measurements taken in that scan are sufficiently accurate and complete.
Devices incorporating coupled vertical-cavity surface-emitting lasers (VCSELs) have been proposed as means to effect unprecedentedly rapid modulation and/or switching of light beams in advanced optical communication and information-processing systems. A basic device according to the proposal would comprise two or more VCSELs (1) positioned so close to each other that they are coupled and (2) connected to a current source that biases them at a steady current above the threshold current for lasing. The operation of VCSELs under the conditions stated above has been simulated computationally with an algorithm that solves an approximation of the Maxwell-Bloch equations. (These are nonlinear coupled partial differential equations that model the relevant aspects of the physics of semiconductor lasers.) The results of the simulations show that the intensities of the beams oscillate, out of phase relative to each other, at a frequency that is typically of the order of tens of gigahertz. In particular, one simulation was performed for two coupled VCSELs, each having a circular aperture 5.6 microns in diameter, operating at a wavelength of 980 nm. The results of the simulation showed that the intensities of the two beams oscillated in opposite phase (see Figure 1) at a frequency of 42 GHz. In the far field, the beams were found to be separated by an angle of approx.=8deg. The intensities of the beams were also found to oscillate in the near field, 90deg out of phase with the oscillation in the far field. Figure 2 depicts a simple near-field switching device in which an assembly of microlenses would couple the two oscillating beams to two receivers.
Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.
This paper reports on laser action in chromium-doped forsterite (Cr:Mg2SiO4) for 1064-nm excitation of the crystal's double-hump absorption band spanning the 850-1200-nm wavelength range. The cavity arrangement used for obtaining laser action in Cr:Mg2SiO2 was similar to that described by Petricevic et al. (1988). The fundamental and second harmonic emissions from a Q-switched Nd:YAG laser operating at a 10-Hz repetition rate were used for excitation of the NIR and visible bands, respectively. Pulsed laser action was readily observed for both the 1064-nm and 532-nm pumping at or above the respective thresholds. The laser parameters of the 532-nm and 1064-nm excitations were similar, indicating that the IR band is responsible for laser action for both excitations.
The study reviews the research and development of a prototype laser used to study one possible method of short-pulse production and amplification, in particular, a pulsed Nd:YAG ring laser pumped by laser diode arrays and injected seeded by a 100-ps source. The diode array pumped, regenerative amplifier consists of only five optical elements, two mirrors, one thin film polarizer, one Nd:YAG crystal, and one pockels cell. The pockels cell performed both as a Q-switch and a cavity dumper for amplified pulse ejection through the thin film polarizer. The total optical efficiency was low principally due to the low gain provided by the 2-bar pumped laser head. After comparison with a computer model, a real seed threshold of about 10 exp -15 J was achieved because only about 0.1 percent of the injected energy mode-matched with the ring.
Improved transmission-line pulse generators of the vector-inversion type are being developed as lightweight sources of pulsed high voltage for diverse applications, including spacecraft thrusters, portable x-ray imaging systems, impulse radar systems, and corona-discharge systems for sterilizing gases. In this development, more than the customary attention is paid to principles of operation and details of construction so as to the maximize the efficiency of the pulse-generation process while minimizing the sizes of components. An important element of this approach is segmenting a pulse generator in such a manner that the electric field in each segment is always below the threshold for electrical breakdown. One design of particular interest, a complete description of which was not available at the time of writing this article, involves two parallel-plate transmission lines that are wound on a mandrel, share a common conductor, and are switched in such a manner that the pulse generator is divided into a "fast" and a "slow" section. A major innovation in this design is the addition of ferrite to the "slow" section to reduce the size of the mandrel needed for a given efficiency.
We developed an all solid state laser ranging detector technology, which makes the goal of millimeter accuracy achievable. Our design and construction philosophy is to combine the techniques of single photon ranging, ultrashort laser pulses, and fast fixed threshold discrimination while avoiding any analog signal processing within the laser ranging chain. The all solid state laser ranging detector package consists of the START detector and the STOP solid state photon counting module. Both the detectors are working in an optically triggered avalanche switching regime. The optical signal is triggering an avalanche current buildup which results in the generation of a uniform, fast risetime output pulse.
The laser performance of a Ho(3+):Tm(3+):Cr(3+):YAG crystal was measured under flashlamp pumping at various operating temperatures. The normal mode laser thresholds of a Ho(3+)(0.45 at. percent):Tm(3+)(2.5 at. percent):Cr(3+)(1.5 at. percent ):YAG crystal were found to range from 26 to 50 J between 120 and 200 K with slope efficiencies up to 0.36 percent with a 60 percent reflective output mirror. From the Q-switched operations a slope efficiency corresponding to 90 percent of the normal mode operation was observed. Laser wavelengths were measured for various operating conditions and fluorescence spectra were obtained at various temperatures in order to help understand the dynamic energy processes among the Ho(3+), Tm(3+), and Cr(3+) ions. A pulse forming network for a flashlamp pumped Cr:GSAG laser, which is to be used as a high power laser diode simulator in rare earth laser pumping, was completed and tested. The network provided critically damped, 1 ms FWHM, square pulses with a rise time of about 160 micrometers at an input electrical energy of 300 J.
We outline two alternate approaches to predicting the onset of congestion in a packet switching satellite, and argue that predictive, rather than reactive, flow control is necessary for the efficient operation of such a system. The first method discussed is based on standard, statistical techniques which are used to periodically calculate a probability of near-term congestion based on arrival rate statistics. If this probability exceeds a present threshold, the satellite would transmit a rate-reduction signal to all active ground stations. The second method discussed would utilize a neural network to periodically predict the occurrence of buffer overflow based on input data which would include, in addition to arrival rates, the distributions of packet lengths, source addresses, and destination addresses.
We outline two alternate approaches to predicting the onset of congestion in a packet switching satellite, and argue that predictive, rather than reactive, flow control is necessary for the efficient operation of such a system. The first method discussed is based on standard, statistical techniques which are used to periodically calculate a probability of near-term congestion based on arrival rate statistics. If this probability exceeds a present threshold, the satellite would transmit a rate-reduction signal to all active ground stations. The second method discussed would utilize a neural network to periodically predict the occurrence of buffer overflow based on input data which would include, in addition to arrival rates, the distributions of packet lengths, source addresses, and destination addresses.
A thermometer that rapidly predicts body temperature based on the temperature signals received from a temperature sensing probe when it comes into contact with the body. The logarithms of the differences between the temperature signals in a selected time frame are determined. A line is fit through the logarithms and the slope of the line is used as a system time constant in predicting the final temperature of the body. The time constant in conjunction with predetermined additional constants are used to compute the predicted temperature. Data quality in the time frame is monitored and if unacceptable, a different time frame of temperature signals is selected for use in prediction. The processor switches to a monitor mode if data quality over a limited number of time frames is unacceptable. Determining the start time on which the measurement time frame for prediction is based is performed by summing the second derivatives of temperature signals over time frames. When the sum of second derivatives in a particular time frame exceeds a threshold, the start time is established.
One of the most efficient methods for protecting electro-explosive devices (EED's) from HERO and ESD is to shield the EED in a conducting shell (Faraday cage). Electrical energy is transferred to the bridge by means of a magnetic coupling which passes through a portion of the conducting shell that is made from a magnetically permeable but electrically conducting material. This technique was perfected by ML Aviation, a U.K. company, in the early 80's, and was called a Radio Frequency Attenuation Connector (RFAC). It is now in wide use in the U.K. Previously, the disadvantage of RFAC over more conventional methods was its relatively high cost, largely driven by a thick film hybrid circuit used to switch the primary of the transformer. Recently, through a licensing agreement, this technology has been transferred to the U.S. and significant cost reductions and performance improvements have been achieved by the introduction of analog integrated circuits. An integrated circuit performs the following functions: (1) Chops the DC input to a signal suitable for driving the primary of the transformer; (2) Verifies the input voltage is above a threshold; (3) Verifies the input voltage is valid for a pre set time before enabling the device; (4) Provides thermal protection of the circuit; and (5) Provides an external input for independent logic level enabling of the power transfer mechanism. This paper describes the new RFAC product and its applications.
The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.
The performance characteristics of high-power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.
A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.
Systems using inertia wheels are evaluated in this report to determine their suitability for precise attitude control of a satellite and to select superior system configurations. Various possible inertia wheel system configurations are first discussed in a general manner. Three of these systems which appear more promising than the others are analyzed in detail, using the Orbiting Astronomical Observatory as an example. The three systems differ from each other only by the method of damping, which is provided by either a rate gyro, an error-rate network, or a tachometer in series with a high-pass filter. An analytical investigation which consists of a generalized linear analysis, a nonlinear analysis using the switching-time method, and an analog computer study shows that all three systems are theoretically capable of producing adequate response and also of maintaining the required pointing accuracy for the Orbiting Astronomical Observatory of plus or minus 0.1 second of arc. Practical considerations and an experimental investigation show, however, that the system which uses an error-rate network to provide damping is superior to the other two systems. The system which uses a rate gyro is shown to be inferior because the threshold level causes a significant amount of limit-cycle operation, and the system which uses a tachometer with a filter is shown to be inferior because a device with the required dynamic range of operation does not appear to be available. The experimental laboratory apparatus used to investigate the dynamic performance of the systems is described, and experimental results are included to show that under laboratory conditions with relatively large extraneous disturbances, a dynamic tracking error of less than plus or minus 0.5 second of arc was obtained.
An electro-optic resonant cavity is used to achieve phase modulation with lower driving voltages. Laser damage thresholds are inherently higher than with previously used integrated optics due to the utilization of bulk optics. Phase modulation is achieved at higher speeds with lower driving voltages than previously obtained with non-resonant electro-optic phase modulators. The instant scheme uses a data locking dither approach as opposed to the conventional sinusoidal locking schemes. In accordance with a disclosed embodiment, a resonant cavity modulator has been designed to operate at a data rate in excess of 100 Mbps. By carefully choosing the cavity finesse and its dimension, it is possible to control the pulse switching time to within 4 ns and to limit the required switching voltage to within 10 V. Experimentally, the resonant cavity can be maintained on resonance with respect to the input laser signal by monitoring the fluctuation of output intensity as the cavity is switched. This cavity locking scheme can be applied by using only the random data sequence, and without the need of additional dithering of the cavity. Compared to waveguide modulators, the resonant cavity has a comparable modulating voltage requirement. Because of its bulk geometry, resonant cavity modulator has the potential of accommodating higher throughput power. Furthermore, mode matching into a bulk device is easier and typically can be achieved with higher efficiency. On the other hand, unlike waveguide modulators which are essentially traveling wave devices, the resonant cavity modulator requires that the cavity be maintained in resonance with respect to the incoming laser signal. An additional control loop is incorporated into the modulator to maintain the cavity on resonance.