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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Current-induced dynamics and tunable spectra of a magnetic chiral bobber

Chiral bobber (ChB) is an exotic three-dimensional topological texture in chiral magnets. It is composed of a Bloch-point singularity and a skyrmion tube; the incommensurate characteristic length scales of these two components would thus lead to novel dynamics of a ChB. In this work, we report the current-induced motion and the accompanying Hall effect of a ChB. Surprisingly, we find that the Hall angle of a ChB can be tuned in a wide range from -90 ° to positive angles. A further study of spin-wave excitations identified high-frequency resonant modes, which are related to the velocity of ChB and lattice constants. The excited frequency can be two orders of magnitude higher than that of skyrmions. The broad ranges of Hall angles and frequency spectra could boost the development of spintronic devices using topological textures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Unconventional Superlattice Ordering in Intercalated Transition Metal Dichalcogenide V1/3NbS2

The interplay between symmetry and topology in magnetic materials makes it possible to engineer exotic phases and technologically useful properties. A key requirement for these pursuits is achieving control over local crystallographic and magnetic structure, usually through sample morphology (such as synthesis of bulk crystals versus thin films) and application of magnetic or electric fields. Here we show that V1/3NbS2 can be crystallized in two ordered superlattices, distinguished by the periodicity of out-of-plane magnetic intercalants. Whereas one of these structures is metallic and displays the hallmarks of altermagnetism, the other superlattice, which has not been isolated before in this family of intercalation compounds, is a semimetallic noncollinear antiferromagnet that may enable access to topologically nontrivial properties. This observation of an unconventional superlattice structure establishes a powerful route for tailoring the tremendous array of magnetic and electronic behaviors hosted in related materials and may expand their use in low-power spintronic or topological quantum devices.

Fender, Shannon S↗
DOE OSTI2025

Spectrally sharp magnetic excitations above the critical temperature in a frustrated Weyl semimetal

The rare-earth α-pyrochlore iridates are a prospective class of conducting frustrated magnets where electronic correlations, large spin-orbit coupling, and geometrical frustration interplay, leading to a rich set of magnetic and electronic phases. Despite their intriguing properties, the magnetic order and excitations in this fundamental class of topological quantum materials remain poorly understood due to challenges in growing large single crystals and insufficient microscopic information on their temperature-dependent phases. Here, by combining state-of-the-art thin-film synthesis, resonant elastic and inelastic X-ray scattering, spin wave analysis, and dynamical spin susceptibility calculations, we unequivocally reveal the presence of spectrally sharp, gapped magnetic excitations in Y 2 Ir 2 O 7 that surprisingly persist well above the Néel transition temperature, signaling the presence of a quasi-universal regime connected to fluctuations on frustrated lattices. This finding implies the existence of a highly unusual cooperative paramagnetic (CP) phase above the ordering temperature and offers an explanation for the puzzling high-temperature magnetic behavior observed across the family of metallic pyrochlore crystals. Understanding such magnetic excitations at technologically relevant temperatures opens up possibilities for novel topological spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dynamic realization of emergent high-dimensional optical vortices

The dimensionality of vortical structures has recently been extended beyond two dimensions, providing additional topological complexity and robustness for high-capacity information processing and turbulence control. The generation of high-dimensional vortical structures has mostly been demonstrated in classical systems through the complex interference of fluidic, acoustic, or electromagnetic waves. However, natural materials rarely support three- or higher-dimensional vortical structures and their physical interactions. Here, we experimentally demonstrate a high-dimensional gradient thickness optical cavity (GTOC) in which the optical coupling of planar metal-dielectric multilayers implements topological interactions across multiple dimensions. At non-trivial topological phases, high-dimensional GTOC induces high-dimensional vortical structures in generalized parameter space in three, four dimensions, and beyond. These emergent high-dimensional vortical structures are observed under electro-optic tomography as optical vortex dynamics in two-dimensional real-space, employing the optical thicknesses of dielectric layers as synthetic dimensions. Our findings hold significant promise for emulating high-dimensional physics and developing active topological photonic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The proximity effect and critical field behavior of Re/Al bilayers

Abstract We report the perpendicular critical field H c 2 properties of disordered Re-Al bilayers via magneto-transport measurements. The bilayers consisted of a d Re = 3 nm bottom layer of Re and an upper Al layer with thickness varying between d Al = 0 − 3 nm. We find that in this range of Al thicknesses, the bilayer transition temperature T c increases with increasing Al thickness, although their monolayer counterparts have T c Re > T c Al . Furthermore, H c 2 of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknesses H c 2 drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices and superinductor circuits.

Womack, F. N. (ORCID:0009000810391507)↗
DOE OSTI2021

Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration

The EuS/InAs interface has recently attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory with a machine-learned Hubbard U correction [Yu et al., npj Comput. Mater. 6, 180 (2020)] to elucidate the effect of the bonding configuration at the interface on the electronic structure. For all interface configurations considered here, we find that the EuS valence band maximum (VBM) lies below the InAs VBM. In addition, dispersed states emerge at the top of the InAs VBM at the interface, which do not exist in either material separately. These states are contributed mainly by the InAs layer adjacent to the interface. They are localized at the interface and may be attributed to charge transfer from the EuS to the InAs. The interface configuration affects the position of the EuS VBM with respect to the InAs VBM, as well as the dispersion of the interface states. For all interface configurations studied here, the induced magnetic moment in the InAs is small. Our results suggest that this interface, in its coherent form studied here, may not be promising for inducing equilibrium magnetic properties in InAs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Giant Doping Response of Magnetic Anisotropy in MnTe

Developing simple ways to control spin states in spintronic devices is a crucial step towards increasing their functionality. MnTe is a room-temperature antiferromagnet with promising spintronic properties, including for thermospintronics and magnon-based devices. Here, we show that, in MnTe, less than 1% Li is sufficient to produce a dramatic spin reorientation as observed by neutron diffraction. The behavior of the 0001 magnetic Bragg peak reveals a significant reorientation of the Mn spins from planar in the pure material to almost completely axial with minimal Li doping. Temperature dependence of the magnetic peaks in Li-doped samples indicates that axial spins shift back to planar suddenly upon approaching the Néel temperature (T N = 307 K). Density functional theory calculations support the idea that a shift in the Fermi level caused by doping is responsible for switching the material between two competing magnetic ground states. These results pave the way for developing easy switching of magnetic states in functional materials such as spintronic devices and topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Intricate short-range order in GeSn alloys revealed by atomistic simulations with highly accurate and efficient machine-learning potentials

GeSn alloys hold promise for silicon-compatible integrated applications in electronics, photonics, and topological quantum devices. However, understanding their intricate structures using density functional theory (DFT) calculations is hindered by spatiotemporal constraints. To overcome this limitation, we develop highly accurate and efficient machine-learning interatomic potentials based on a neuroevolution potential approach with farthest point sampling on a comprehensive DFT data set. The application of the developed machine-learning potential in large-scale atomistic simulations bridges the spatiotemporal gap between modeling and advanced characterizations, and facilitates the discovery of structural intricacies in GeSn alloys. Through extensive statistical sampling, we identify a type of short-range order (SRO) that is distinguished by both its structural signature and electronic band gap from the SRO structure previously predicted. Modeling based on a large simulation cell reveals the coexistence of nano SRO domains with various degrees of ordering, demonstrating a complex spatial heterogeneity of SRO structure. Finally, our study not only reinforces the significance of fine-level structural information in alloys, but it also constitutes an effective framework for exploring SRO in a broad range of complex alloys based on highly accurate and effective machine-learning potentials.

36 MATERIALS SCIENCE↗
NASA NTRS2019

Level Set Topology Optimization of Load Carrying Heat Dissipation Devices

In this paper, we introduce a level set method topology optimization method of structures subjected to coupled mechanical and thermal loads. Different examples considering compliance minimization and stress minimization under temperature and volume constraints, and mass minimization under stress and temperature constraints, are presented. The p-norm of the stress field and temperature field is used to approximate the maximum stress and temperature, respectively. The developed method is applied in the design of an L-bracket and a battery package. The results show that designs obtained by ignoring the thermal or structural constraints can result in high values of temperature or stress, respectively.

Kambampati, Sandilya↗
NASA NTRSDate not supplied

On the Moon to Stay: Challenges Presented to Power Electronics Technology by Sustained Operations on the Lunar Surface

NASA’s Artemis Program seeks not only to return humans to the Moon for the first time since the 1970’s but also to provide the technological basis for infrastructure that will enable permanent and expanding scientific and industrial exploitation of the Lunar surface. The primary purpose of this infrastructure is to generate and distribute power to a diverse and growing range of scientific and industrial assets, and the keys to success for this function are power management and control circuits that are highly reliable and maintainable for a decade of operation in the extreme thermal, radiation, and dust environment of the Lunar surface. While various combinations of wide band gap semiconductors, electronic devices, circuit topologies, and shielding schemes have been successfully developed for mission environments ranging from low Earth orbit to the Jovian system, power management technology has not been optimized to meet the full combination of mission requirements for the Lunar surface. To accomplish this, NASA requests the dedicated focus of the power electronics industry.

semiconductors↗
DOE OSTI2021

IEEE P2988: Recommended Practice of Use and Functions of Virtual Synchronous Machines

Power systems are going through a paradigm shift from centralized generation to distributed generation. This brings unprecedented challenges to power systems stability, reliability, and security. Operating power electronic converters as Virtual Synchronous Machines (VSMs) can bring backward compatibility to power systems, unify and harmonize the integration and interaction of future power systems players, and improve power system stability, reliability, and security. This is vital for the large-scale adoption of distributed energy resources, the advancement of sustainability, and the development of a low-carbon economy. This IEEE 2988 Recommended Practice will define the fundamental principles, mandatory functions, and optional functions of a VSM, i.e., a power electronic converter that is operated to behave like conventional synchronous machines. It will not describe or specify power semiconductor devices, hardware topologies, or micro-controllers that are used to build a VSM. This talk will discuss the activities and development plan for IEEE 2988 with the aim to engaging broad stakeholders and widening participation.

Zhong, Qing-Chang↗
DOE OSTI2026

Microstructural Topology as a Prescriptor for Quantum Coherence: Towards A Unified Framework for Decoherence in Superconducting Qubits

In superconducting quantum circuits, decoherence improvements are frequently obtained through process interventions that simultaneously modify surface chemistry, microstructural topology, and device geometry, leaving mechanistic attribution structurally underdetermined. Predictive materials engineering requires measurable structural statistics to be separated from geometry-dependent coupling coefficients into independently testable factors. We introduce the concept of classical and quantum microstructure. In that context, we formulate a channel-wise separable framework for decoherence in superconducting transmon qubits in which each loss channel is described by a reduced prescriptor. Here, a channel-specific microstructural state variable is determined independently of device geometry, and a geometry-dependent coupling functional is computable from field solutions without reference to surface chemistry. We derive this product form from a spatially resolved kernel representation and establish a perturbative separability criterion that defines the regime where independent variation of the variables is valid. The framework specifies five prescriptor classes for dominant loss pathways in transmon-class devices. Falsifiability is operationalized through a pre-committed 2x2 experimental protocol in which the variables must satisfy independent ratio checks within propagated uncertainty. A Minimum-Dataset Specification standardizes reporting for cross-laboratory inference. Part I establishes the conceptual and mathematical architecture; coordinated experimental validation is reserved for Part II.

Dravid, Vinayak P. [Northwestern U.]↗
DOE OSTI2020

GaN‐based split phase transformer‐less PV inverter with auxiliary ZVT circuit

This paper explores performance enhancement of the common ground dynamic dc‐link (CGDL) inverter for single phase photovoltaic (PV) applications by a combination of gallium nitride (GaN) devices, split phase topology, coupled inductors, and zero voltage transition (ZVT) scheme. The CGDL inverter has the inherent advantage of minimised dc‐link capacitance and negligible leakage current due to the common ground configuration, but its reported efficiency was usually lower because of the higher dc‐link voltage used for the reduction of decoupling capacitance to a great extent. To solve the efficiency problem, in this study, a soft switching circuit is proposed for the first stage, while a coupled inductor integrated magnetics is incorporated in the second stage to reduce inductor loss, volume, and cost. Both of these topological improvements combined with the use of GaN devices facilitate in achieving high efficiency without compromising converter power density. Extensive experimental results are provided from a GaN based 1 kVA hardware prototype to demonstrate the superior performance of the CGDL inverter attaining a peak efficiency of 98.7% and a California Energy Commission efficiency of 98.5% at 75/50 kHz switching frequency.

Xia, Yinglai↗
DOE OSTI2025

The Noncollinear Path to Two-Dimensional Topological Superconductivity

Two-dimensional magnet-superconductor hybrids (2D-MSH) are promising candidates to realize devices for topology-based quantum technologies and superconducting spintronics. So far, studies have focused on 2D-MSH systems with collinear ferro- or antiferromagnetic layers. Here, we present the discovery of topological superconductivity in a noncollinear MSH system where a magnetic spiral is realized in an Fe monolayer proximity coupled to a superconducting Ta(110) substrate. By combining low-temperature spin-polarized scanning tunneling spectroscopy with an in-depth theoretical study, we can conclude that the system is in a topological nodal-point superconducting phase with low-energy edge modes. Furthermore, we reveal that for this noncollinear spin texture, these edge modes exhibit a magnetization direction-dependent dispersion. This means that a spatial shift of the magnetic spiral could be used to reverse the chirality of an edge mode in future MSH-based devices.

chiral edge modes↗
DOE OSTI2024

A mesoscopic device for a realization of the topological Kondo effect

The search for anyons is a field of immense interest owing to its potential application in the field of quantum information. Quantum critical Kondo impurities constitute one possible platform for their realization and topological Kondo effect (TKE) by virtue of remaining critical in the presence of perturbations, seems to be especially promising in this regard. In this paper we discuss practical steps for a realization of TKE with a relatively high Kondo temperature $\mathbf{T}$ k . Its central feature is the so-called Majorana-Cooper box (MCB) and we argue that a particular type of iron-based topological superconductor is especially suitable for realization of TKE. Once MCB is available one needs to connect it to external metallic leads to produce TKE. A relatively high value of the Kondo temperature $\mathbf{T}$ k is then aided by a large superconducting gap of the iron-based superconductor. We give estimates for $\mathbf{T}$ k , for the cases of both isotropic and anisotropic exchange couplings of MCB with the leads.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Flux-Closure Domain Structures in Ferroelectric K 0.5 Na 0.5 NbO 3 Thin Films

Topological domain structures in ferroelectric materials have garnered increasing attention due to their intriguing physical properties and promising applications. While most existing topological structures in ferroelectric perovskite oxides originate from tetragonal or rhombohedral bulk phases, much less is understood about their counterparts in orthorhombic ferroelectrics. Here, in this work, we employ ferroelectric K 0.5 Na 0.5 NbO 3 (KNN) thin films as a model system and leverage phase-field simulations to theoretically predict the static structures and dynamic behaviors of three types of flux-closure domain configurations: in-plane (Type-I), out-of-plane (Type-II), and superdomain (Type-III) flux-closure structures. We systematically investigate the effects of finite size, misfit strains, and electrical boundary conditions on the formation and switching of these topological structures. For the Type-I structure, size reduction or small misfit strain facilitates a transition of the flux-closure pattern to polar vortices. Type-II structures emerge under open-circuit electrical boundary conditions of the film, forming at the junctions of specific domain walls with the film surface or the film–substrate interface. The formation mechanisms of these two flux-closure structures are rationalized from an energy perspective. We demonstrated switching capabilities of Type-II and Type-III structures by obtaining polarization–electric field hysteresis loops. Our simulations also reveal a reversible electric-field-induced transition between the orthorhombic and rhombohedral ferroelectric phases with a checkerboard domain pattern, during which the integrity of the flux-closure structure is preserved. These findings provide theoretical insights and practical guidance for identifying and manipulating topological structures in low-symmetry ferroelectrics, paving the way for developing energy-efficient microelectronic devices based on topological structures.

P-E loop↗