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Spectroscopy of Rydberg states in erbium using electromagnetically induced transparency
We present a study of the Rydberg spectrum in 166 Er for series connected to the 4 f 12 ( 3 H 6 )6s, J c = 13/2 and J c = 11/2 ionic core states using an all-optical detection based on electromagnetically induced transparency in an effusive atomic beam. Identifying approximately 550 individual states, we find good agreement with a multi-channel quantum defect theory (MQDT) which allows assignment of most states to ns or nd Rydberg series. We provide an improved accuracy for the lowest two ionization thresholds to E IP, J c =13/2 = 49260:750(1) cm -1 and E IP, J c =11/2 = 49701:184(1) cm -1 as well as the corresponding quantum defects for all observed series. We identify Rydberg states in five different isotopes, and states between the two lowest ionization thresholds. Our results open the way for future applications of Rydberg states for quantum simulation using erbium and exploiting its special open-shell structure.
MgZnO-Based Negative Capacitance Transparent Thin-Film Transistor Built on Glass
Not Available
Colorless Polyimide Films for Thermal-Control Coatings
Series of six essentially colorless aromatic polyimide films synthesized and characterized with objective of obtaining maximum optical transparency for applications in space; optical transparency requirement for high-performance polymeric films used in second-surface mirror coatings on thermal-control systems. Films remain more transparent than commercial film after ultraviolet and electron irradiation. Increased transparency and enhanced solubility of optically transparent polyimides makes them viable candidates for use in thermal-control coatings.
Structure-property relationships and mobility optimization in sputtered La-doped BaSn O 3 films: Toward 100cm 2 V -1 s -1
he wide band gap semiconducting perovskite BaSnO 3 is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO 3 thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO 3 thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba 0.98 La 0.02 SnO 3 films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm 2 V –1 s –1 is achieved in vacuum-annealed GdScO 3 (110)/BaSnO 3 (120 nm)/Ba 0.98 La 0.02 SnO 3 (200 nm) heterostructures, as well as 92 cm 2 V –1 s –1 on unbuffered substrates and 87 2 V –1 s –1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped BaSnO 3 films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.
Boron phosphide as a p-type transparent conductor: Optical absorption and transport through electron-phonon coupling
Boron phosphide has recently been identified as a potential high-hole-mobility transparent conducting material. This promise arises from its low hole effective masses. However, boron phosphide has a relatively small, 2 eV, indirect bandgap which will affect its transparency. In this study, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify the potential of boron phosphide as a p-type transparent conductor. We find that phonon-mediated indirect optical absorption is weak in the visible spectrum and that the phonon-limited hole mobility is very high (around 900 cm 2 /Vs) at room temperature. This exceptional mobility comes from the combination of a low hole effective mass and very weak scattering by polar phonon modes. We rationalize the weak scattering by the less ionic bonding in boron phosphide compared to oxides. We suggest that this could be a general advantage of nonoxides for p-type transparent conducting applications. Using our computed properties, we assess the transparent conductor figure of merit of boron phosphide and show that it exceeds by one order of magnitude that of established p-type transparent conductors, confirming the potential of this material.
Birefringence in thermally anisotropic relativistic plasmas and its impact on laser–plasma interactions
One of the paradigm-shifting phenomena triggered in laser–plasma interactions at relativistic intensities is the so-called relativistic transparency. As the electrons become heated by the laser to relativistic energies, the plasma becomes transparent to the laser light even though the plasma density is sufficiently high to reflect the laser pulse in the non-relativistic case. This paper highlights the impact that relativistic transparency can have on laser-matter interactions by focusing on a collective phenomenon that is associated with the onset of relativistic transparency: plasma birefringence in thermally anisotropic relativistic plasmas. Here, the optical properties of such a system become dependent on the polarization of light, and this can serve as the basis for plasma-based optical devices or novel diagnostic capabilities.
Measuring the Electric Dipole Moment of the Electron in a Two-Energy Spin-Transparent Storage Ring
We will present a new design of a two-energy storage ring for low energy (0.2 to 2 MeV) polarized electron bunches [1]. The new design is based on the transparent spin methodology that cancels the spin precession due to the magnetic dipole moment at any energy while allowing for spin precession induced by the fundamental physics of interest to accumulate. The buildup of the vertical component of beam polarization can be measured using standard Mott polarimetry that is optimal at low electron energy. These rings can be used to measure the permanent electric dipole moment of the electron, relevant to CP violation and matter-antimatter asymmetry in the universe, and to search for dark energy and ultra-light dark matter.
Measuring the Electric Dipole Moment of the Electron in a Two-Energy Spin-Transparent Storage Ring
We will present a new design of a two-energy storage ring for low energy (0.2 to 2 MeV) polarized electron bunches [1]. The new design is based on the transparent spin methodology that cancels the spin precession due to the magnetic dipole moment at any energy while allowing for spin precession induced by the fundamental physics of interest to accumulate. The buildup of the vertical component of beam polarization can be measured using standard Mott polarimetry that is optimal at low electron energy. These rings can be used to measure the permanent electric dipole moment of the electron, relevant to CP violation and matter-antimatter asymmetry in the universe, and to search for dark energy and ultra-light dark matter.
High-Energy Radiation and Solar Cell Shields
High energy electron radiation effect on optical transmission of transparent materials for solar cell shields
Solution-Processed Oxide Thin Films for Perovskite Photovoltaics (Final Report)
The overarching goal of the voucher project is to evaluate the suitability of NexTC materials as functional layers in perovskite photovoltaic technology. There are several different perovskite device configurations that are being pursued for commercialization. Most are superstrate configuration (light enters the device through the glass substrate) and can be subdivided into two categories: PIN and NIP. At minimum, PIN devices have a transparent conductor (typically Indium Tin Dioxide [ITO] or Fluorine-Doped Tin Oxide [FTO]) and hole transport layer (HTL) deposited on glass before the perovskite is deposited. Alternatively, NIP devices have a transparent conductor and electron transport layer (ETL) deposited before the perovskite is deposited. NexTC produces several inks that can be deposited to replace or modify the transparent conductor and/or the ETL or HTL, depending on the device. NLR will produce PIN and NIP perovskite devices on substrates that have been coated by NexTC and compare to NLR-standard devices that perform among the best for research labs across the world. The work will ultimately expose NexTC products to the up-and-coming perovskite PV industry.
Electron cyclotron emission measurements and modeling in optically semi-transparent plasma on the HSX stellarator
On the Helically Symmetric Experiment (HSX), electron cyclotron emission (ECE) at the second harmonic of the electron gyrofrequency is measured with a 16-channel heterodyne receiver. An ECE radiometer diagnostic has been calibrated with a broadband frequency source, allowing independent measurements of the electron temperature. The antenna pattern has a significant impact on the measurements, and modeling its effect is necessary to produce an ECE radiation temperature spectrum. Measurements, calibration results, and modeling of the ECE data are presented in this paper. At a relatively high plasma density, HSX plasmas are thermal, and the radiation temperature measured by the radiometer is in good agreement with the electron temperature measured by a Thomson scattering diagnostic. At a relatively low plasma density, the deviation from a Maxwellian distribution is large, and asymmetry in the radiation temperature profile is measured. These measurements are supported by single-pass and multi-pass ray tracing calculations of the electron cyclotron emission using the TRAVIS ray tracing code. Thermal and nonthermal electron populations exist in HSX, and the effect of these populations on the asymmetry in the measured emission is presented.
Limits on the streaming and escape of electrons in thermal models for solar hard X-ray emission
Upper limits on the number of fast electrons streaming through and escaping from a plasma whose electrons have been heated to approximately 100 billion K and confined by a collisionless ion-acoustic thermal conduction front are determined. It is shown that such a front is fairly transparent to fast electrons with velocities much larger than the thermal velocity because the anisotropic ion-acoustic waves cannot scatter them, making them collisionless on a scale much larger than the thickness of the front. The collisionless analog of the collisional thermoelectric field is derived self-consistently and shown to offer a significant impediment to fast electrons because they must climb over a larger potential barrier than in the collisional case. The only factors limiting the escape of electrons able to surmount this barrier are their rate of production and the requirement that they carry less heat flux than the maximum heat flux allowable. The rate of production is determined for the case of a Maxwellian whose tail is being filled collisionally.
Graphene Transparent Conductive Electrodes for Next- Generation Microshutter Arrays
Graphene is a single atomic layer of graphite. It is optically transparent and has high electron mobility, and thus has great potential to make transparent conductive electrodes. This invention contributes towards the development of graphene transparent conductive electrodes for next-generation microshutter arrays. The original design for the electrodes of the next generation of microshutters uses indium-tin-oxide (ITO) as the electrode material. ITO is widely used in NASA flight missions. The optical transparency of ITO is limited, and the material is brittle. Also, ITO has been getting more expensive in recent years. The objective of the invention is to develop a graphene transparent conductive electrode that will replace ITO. An exfoliation procedure was developed to make graphene out of graphite crystals. In addition, large areas of single-layer graphene were produced using low-pressure chemical vapor deposition (LPCVD) with high optical transparency. A special graphene transport procedure was developed for transferring graphene from copper substrates to arbitrary substrates. The concept is to grow large-size graphene sheets using the LPCVD system through chemical reaction, transfer the graphene film to a substrate, dope graphene to reduce the sheet resistance, and pattern the film to the dimension of the electrodes in the microshutter array. Graphene transparent conductive electrodes are expected to have a transparency of 97.7%. This covers the electromagnetic spectrum from UV to IR. In comparison, ITO electrodes currently used in microshutter arrays have 85% transparency in mid-IR, and suffer from dramatic transparency drop at a wavelength of near-IR or shorter. Thus, graphene also has potential application as transparent conductive electrodes for Schottky photodiodes in the UV region.
Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS2
Coulomb interactions in atomically thin transition metal dichalcogenides can be dynamically engineered by exploiting the dielectric environment to control the optical and electronic properties. Here we demonstrate an optically tunable giant band-gap renormalization (BGR) ~1200 and 850 meV from the edge of the conduction band and complete suppression of the exciton absorption in large-area single-layer (1L) and three-layer (3L) MoS2, respectively. The observed giant BGR is two orders of magnitude larger than that in the conventional semiconductors, and it persists for tens of ps. Strikingly, our results demonstrate photoinduced transparency at the electronic band gap using an intense optical field at room temperature. Exciton bleach recovery in 1L and 3L show a contrasting fluence-dependent response, demonstrating the layer-dependent optical tuning of exciton lifetime in a way that would be both reversible and real time. We find that the optical band gap (exciton resonance peak) shows a transient redshift followed by an anomalous blueshift from the lowest energy point as a function of the photo-generated carrier density. The observed exciton energy shift is analogous to atom-atom interactions, and it varies as a Lennard-Jones like potential as a function of the interexciton separation.
Oligoether-Functionalized PEDOT: Combining an EDOT Backbone with Polar Side Chains for Solution Processability and High Electrical Conductivity
Conjugated polymers functionalized with oligoether (OE)-based side chains are a key class of materials for various organic electronic applications, including transparent electrodes, thermoelectrics, electrochromic displays, and electrochemical transistors. Herein, we report a highly soluble OE-functionalized poly(3,4-ethylenedioxythiophene) (PEDOT) homopolymer, prepared by direct (hetero)arylation polymerization, which allows solution processing to yield films with comparable redox properties to oxidatively polymerized PEDOT. This polymer, PEDOT(OE3), when optimally oxidatively doped, reaches among the highest electrical conductivities of any OE-functionalized polymer and is comparable to more synthetically complex OE-functionalized polymers. X-ray scattering and spectroscopy were utilized to rationalize the transport properties resulting from varying the doping level. Comparison of PEDOT(OE3) to a series of OE-functionalized dioxythiophenes with varying amounts of 3,4-ethylenedioxythiophene units allows for a deeper understanding of structure–property relationships through charge-transport models. Ultimately, PEDOT(OE3) is shown to be a material with exceptional charge-transport properties and is promising for various applications.
Co-templating of polyoxoniobates and silicate/germanate trimer-rings in crystals and inorganic gels
Polyoxometalate (POM) supramolecular gels are a growing family of materials, both for understanding fundamental self-assembly and fabricating flexible monolithic materials that retain the function of metal oxides. Here, we exploited the pH-dependent speciation of polyoxoniobates (PONbs), targeting the formation of PONb-containing supramolecular gels that contain other low molecular weight components (silicate, germanate, phosphate, and carbonate). The introduction of gaseous CO 2 into aqueous hexaniobate solutions resulted in the formation of both new crystalline phases and highly transparent gels. The crystalline phases, formulated Cs 24 [Nb 7 O 22 (NbO(CO 3 ) 2 ) 9 (Si 3 O 9 )]·19.6H 2 O and Cs 21 Na 3 [Nb 7 O 22 (NbO(CO 3 ) 2 ) 9 (Ge 3 O 9 )]·33.6H 2 O are templated by a rare planar [X 3 O 9 ] 6− (X = Si, Ge) ring. Crystalline phases were not obtained with phosphate; instead, the gels contain a mixture of phosphate-centred PONbs and network-forming phosphate. POM speciation within the gels, physical properties, and assembly mechanisms were benchmarked by solution and solid-state nuclear magnetic resonance (NMR) spectroscopy, vibrational spectroscopies, small-angle X-ray scattering (SAXS), and thermogravimetry-mass spectroscopy. Optical analysis and dielectric behavior of the gels confirmed that they are highly transparent ionic and electronic conductors. The alkali and hydroxide concentration controls the formation of crystalline materials or supramolecular gels while maintaining the same network building blocks, providing a rare opportunity to describe the molecular-level structure of inorganic amorphous materials.