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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Exploiting Fixed Charge to Control Schottky Barrier Height in Si|Al 2 O 3 |MoO x – based Tunnel Diodes

The insertion of a tunneling atomic layer deposited (ALD) Al 2 O 3 film between MoO x and p-type Si has been studied to investigate Schottky barrier height tunability with varied negative fixed charge density. This work seeks to increase the hole-selectivity of MoO x -based contacts through manipulation of interface fixed charge. Fixed charge density and interface trap state densities are determined as a function of alumina processing conditions in metal-oxide-semiconductor capacitors (MOSCAPs). Schottky barrier heights were determined from Mott-Schottky analysis of tunnel diodes. An alumina deposition temperature of 80°C and post-deposition annealing at 425°C yielded the highest magnitude of negative fixed charge density (-3.5 × 10 12 q . cm –2 ). High deposition temperature and/or post-deposition annealing produced the lowest interface trap state density (1 × 10 12 eV -1 . cm –2 ). On p-type silicon, Schottky barrier height minimization was not clearly correlated with increasing fixed charge density. However, on n-type silicon, a significant increase in Schottky barrier height was evident (~0.8 eV to > 1 eV) and is attributed to the large negative fixed charge. Here, the findings from this work indicate that Schottky barrier height in carrier selective contacts can be tuned by electrostatic engineering of the SiO x |Al 2 O 3 interface.

aluminum oxide↗
DOE OSTI2023

Characterizing Density and Spatial Distribution of Trap States in Ta 3 N 5 Thin Films for Rational Defect Passivation

Tantalum nitride (Ta 3 N 5 ) has gained significant attention as a potential photoanode material, yet it has been challenged by material quality issues. Defect-induced trap states are detrimental to the performance of any semiconductor material. Beyond influencing the performance of Ta 3 N 5 films, defects can also accelerate the degradation in water during desired electrochemical applications. Defect passivation has provided an enormous boost to the development of many semiconductor materials but is currently in its infancy for Ta 3 N 5 . This is in part due to a lack of experimental understanding regarding the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. Here, we employ drive-level capacitance profiling (DLCP) to experimentally resolve the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. The density of deeper energetic traps is found to reach ∼2.5 to 6 × 10 22 cm –3 at the interfaces of neat Ta 3 N 5 thin films, over an order of magnitude greater than the bulk. In addition to the spatial profile of deep trap states, we report neat Ta 3 N 5 thin films to be highly n-type in nature, owning a free carrier density of ∼9.74 × 10 17 cm –3 . This information, coupled with the present understanding of native oxide layers on Ta 3 N 5 , has facilitated the rational design of a targeted passivation strategy that simultaneously provides a means for catalyst immobilization. Loading catalyst via silatrane moieties suppresses the density of defects at the surface of Ta 3 N 5 thin films by two orders of magnitude, while also reducing the free carrier density of films by over one order of magnitude, effectively dedoping the films to ∼2.40 × 10 16 cm –3 . The surface passivation of Ta 3 N 5 films translates to suppressed defect-induced trapping and recombination of photoexcited carriers, as determined through absorption, photoluminescence, and transient photovoltage. Here, this illustrates how developing a deeper understanding of the distribution and influence of defects in Ta 3 N 5 thin films has the potential to guide future works and ultimately accelerate the integration and development of high-performance Ta 3 N 5 thin film devices.

defect passivation↗
DOE OSTI2023

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C - ψs technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. Here this work explores the primary sources of errors present in the C - ψs technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1/C$^{*2}_s$ vs Ψ s plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1/C$^{*2}_s$ vs Ψ s plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine.

42 ENGINEERING↗
DOE OSTI2023

Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts

A tunneling atomic layer deposited (ALD) AlO x layer was inserted in a Si|SiO x |AlO x |MoO x |metal tunnel diode structure to investigate the impact of fixed interface charge on Schottky barrier height. ALD AlO x provides a synthesis-tunable fixed charge and can provide excellent field effect passivation at the SiO x |AlO x interface. A large (>1 × 10 12 q.cm –2 ) negative fixed charge density was expected to decrease Schottky barrier height on p-type silicon and increase Schottky barrier height on n-type silicon by up to 0.4 eV based on an electrostatic model. Fixed charge density and interface trap state density were measured using a thick layer of AlO x in metal oxide semiconductor capacitor structures (MOSCAPs); Schottky barrier height and specific contact resistivity were measured using a tunneling-active layer of AlO x in contacted structures with MoO x . In some samples, HfO x interface layers were inserted between AlO x and silicon to quench the fixed negative charge. The Schottky barrier height was found to vary with processing conditions but did not have a strong correlation with expected fixed charge density. Here, while fixed charge may play a role in determining the Schottky barrier height, other parameters also have significant affect. Further work is needed to minimize contact resistivity and elucidate other factors impacting the Schottky barrier height.

14 SOLAR ENERGY↗
DOE OSTI2023

Anisotropic electrical properties of NiO x /β-Ga 2 O 3 p-n heterojunctions on (2̅01), (001), and (010) crystal orientations

Abstract NiO x / β -Ga 2 O 3 p-n heterojunctions fabricated on ( 2 ̅ 01 ) , ( 001 ) , and ( 010 ) β -Ga 2 O 3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification ≥10 9 , and turn-on voltages >2.0 V. The ( 010 ) device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with ( 2 ̅ 01 ) and ( 001 ) devices. Moreover, it is calculated that the interface trap state densities for ( 2 ̅ 01 ) , ( 001 ) , and ( 010 ) plane devices are 4.3 × 10 10 , 7.4 × 10 10 , and 1.6 × 10 11 eV –1 cm –2 , respectively. These differences in the NiO x / β -Ga 2 O 3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities.

Physics↗
DOE OSTI2024

Rapid recovery of invasive wild pig (Sus scrofa) populations following density reduction

Abstract Trapping is an effective strategy for control of invasive wild pig (Sus scrofa), but eradication of populations via trapping alone typically is impractical throughout much of the species’ introduced range. Consequently, recovery of wild pig populations to pre-trapping levels following control is a major impediment to success of long-term control. In this study, we conducted camera-trap surveys to monitor recovery of two wild pig populations immediately following density reductions achieved via trapping on two sites on the Savannah River Site, SC. We used spatial capture-recapture models to estimate wild pig density during seven 3 week periods spanning 12 months to: (1) determine the time required for populations to recover to pre-trapping levels; and (2) evaluate trends in population growth, density, and distribution during recovery. Recovery of both wild pig populations started immediately after trapping ceased, with populations reaching pre-trapping levels in 3 and 5 months. Threeweek population growth rates for each wild pig population during recovery averaged 1.28 (range = 1.11–1.39 on site 1) and 1.24 (range = 0.64–1.92 on site 2), which corresponded to a 345% and 132% increase in abundance (an increase of 141 and 126 individual wild pigs on site 1 and 2, respectively) of each population by the last survey period. Rapid recovery and growth beyond pre-trapping levels of wild pig populations likely were driven by residual wild pigs not removed by trapping and compensatory reproduction and immigration. Our study is one of the first to provide information on how quickly wild pig populations can recover following overall density reductions of 54–68% and indicates practitioners should be prepared to reinitiate trapping efforts in as little as 3 months to prevent recovery of wild pig populations following control.

Biodiversity & Conservation↗
DOE OSTI2022

Carbazole-Based Hole Transport Polymer for Methylammonium-Free Tin-Lead Perovskite Solar Cells with Enhanced Efficiency and Stability

As the most commonly used hole transport material (HTM) in tin-lead (Sn-Pb) perovskite solar cells (PSCs), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) limits the power conversion efficiency (PCE) and stability of the PSCs due to its acidic characteristics. Herein, an easily synthesized polymer HTM poly[(phenyl)imino[9-(2-ethylhexyl)carbazole]-2,7-diyl] (CzAn) with a shallow highest occupied molecular orbital (HOMO) level of -4.95 eV is used in a p-i-n structure, methylammonium-free, Sn-Pb PSC to replace PEDOT:PSS. Upon optimization using doping and surface engineering, high quality Sn-Pb PSCs could be successfully fabricated, boosting the PCE to 22.6% (stabilized PCE of 21.3%) compared with 21.2% for PEDOT:PSS. The perovskite films prepared on the modified CzAn HTM possess improved crystallinity, reduced trap-state density, and larger carrier mobility resulting in PSCs with greatly improved stability.

carrier mobility↗
DOE OSTI2025

Rb 4 CuSb 2 Cl 11 and Rb 2 In 0.91(0.2) Sb 0.09 Cl 5 ·H 2 O: Wide Band Gap 0D Metal Halide Semiconductors

Herein, we report the discovery, structural and photophysical characterization of a new zero-dimensional (0D) lead-free all-inorganic halide, Rb 4 CuSb 2 Cl 11 , which adopts a new structure type. Single-crystal X-ray diffraction (SCXRD) shows that the structure consists of isolated, distorted seesaw [SbCl 4 ] − and trigonal planar [CuCl 3 ] 2− units, separated by Rb + cations that provide charge balance. Optoelectronic measurements and density functional theory (DFT) calculations indicate an indirect band gap of 2.89 eV, making it a candidate for wide-bandgap optoelectronic applications. Electrical resistivity was measured at 1.29 × 10 10 Ω·cm, and the trap-state density (n trap ) was found to be 7.44 × 10 10 cm −3 . Attempts to synthesize substitution analogs of Rb 4 CuSb 2 Cl 11 led to the synthesis of Rb 2 In 0.91(0.2) Sb 0.09 Cl 5 ·H 2 O, which was erroneously reported as Rb 2 SbCl 5 O in a previous study. Rb 2 In 0.91(0.2) Sb 0.09 Cl 5 ·H 2 O adopts a vacancyordered perovskite structure and exhibits broad-band yellow emission under UV excitation. The measured photoluminescence quantum yield (PLQY) for Rb 2 In 0.91 (0.2)Sb 0.09 Cl 5 ·H 2 O is 18.2%. These findings add to the growing class of quaternary metal halides with multiple cation and anion compositions, expanding the chemical phase space for the discovery of new materials with functional properties.

Crystal structure↗
DOE OSTI2019

Modeling dislocation-related leakage currents in GaN p-n diodes

Finite element analysis software was used to model and visualize two p-n junction models: one with a single threading dislocation (TD) and a control model without a dislocation. TDs are modeled as a Gaussian distribution of trap states with an FWHM of 5 nm localized around the r=0 line in a cylindrical coordination such that the linear trap state density was 1 trap/c-translation; this model allows the cylindrical symmetry of the c-plane GaN crystal orientation to be utilized to avoid more computationally intensive 3D models. It was discovered that the interaction of the charged dislocation region with the p-n junction had many notable effects. At zero bias, it was observed that the depletion region width (using the Depletion Approximation) and the maximum electric field were markedly reduced near the dislocation line. More significantly, an asymmetric reduction in the diffusion barrier for electrons (Vbieff=3.03eV) and holes (Vbieff=0.81eV) was observed due to the asymmetric nature of the dislocation band bending related to the doping. The asymmetric reductions in diffusion barriers persisted into VA=2.4V leakage case where asymmetric current profiles for electrons and holes were also observed. Lastly, the diffusion barrier reduction resulted in an additional Shockley-Read-Hall nonradiative recombination leakage caused by a high np-product and trap state density near the intersection of the dislocation with the junction.

Robertson, C. A. (ORCID:0000000300122262)↗
DOE OSTI2024

A Highly Effective Polysulfide-Trapping Approach for the Development of High Energy Density, Scalable Lithium-Sulfur Batteries

Lithium-sulfur (Li-S) batteries are identified as one of the most promising next-generation battery technologies owing to their high theoretical specific energy, sustainability, and affordability. However, the commercialization of Li-S batteries has been hindered by severe technical challenges, including the lithium polysulfide (PS) dissolution/shuttling effect, a major cause of fast capacity degradation over cycling. We demonstrated that, for the first time, nanolayer polymer coated high surface area porous carbons (NPCs) were coated directly on sulfur electrodes (NPC-S), which led to a high specific capacity of ∼1,600 mAh g −1 approaching the theoretical specific capacity limit in the NPC-S based Li-S batteries. The NPC-S based Li-S batteries maintained their large initial specific capacity gain compared with the Baseline-S based Li-S batteries (control) over extended cycles. A follow-on study indicated that the NPC-S approach is a necessary and critical step to boost the near-theoretical specific capacity while being stabilized over long cycles with a synergistic strategy. Our experimental and computational results suggest that NPC coated on sulfur electrodes provides not only an effective and strong PS-trapping power but also an increased redox reaction kinetics for sulfur ↔ PS’s conversions during battery charge and discharge, rendering the realization of near-theoretical discharge specific capacity in the NPC-S based Li-S batteries. The findings presented in this study may inspire a new, simple, low-cost, and commercially scalable approach, without adding any appreciable dead weight or volume to the batteries, in the effort to tackle the technical challenges facing SOA Li-S batteries.

25 ENERGY STORAGE↗
DOE OSTI2025

Habitat-specific seasonal densities of sympatric raccoons and opossums in the southeastern United States

Raccoon and opossum densities have implications for rabies management, but estimates of seasonal densities of both species are lacking for rural nonagricultural habitats of the southeastern United States, a core portion of their geographic range. Consequently, it remains unclear whether the densities of 1 species limit the other, which is possible considering their substantial niche overlap. We carried out a mark–recapture study of raccoons and opossums in 4 rural nonagricultural habitats (bottomland hardwood forest, riparian forest, upland pine forest, and isolated wetlands) in South Carolina, United States (2020 to 2022), and combined this with previous data from the same habitats (2017 to 2019) to estimate habitat-specific spring and fall densities. Raccoon densities ranged from 5.17 ± 0.96 animals/km 2 (bottomland hardwood fall) to 1.63 ± 0.83 animals/km 2 (upland pine spring) and were on average 19% higher in fall compared to spring. Opossum densities ranged from 10.35 ± 1.98 animals/km 2 (bottomland hardwood fall) to 1.11 ± 1.55 animals/km 2 (upland pine spring) with divergent seasonal patterns among habitats. These low densities across all habitats compared to other studies are likely the result of low resource availability, consistent with other habitats that have minimal anthropogenic influence. We observed a positive association between raccoon and opossum densities across trapping grids, suggesting that raccoons do not suppress opossum densities, but that densities of both species increase with increasing resource availability. Furthermore, our results can be used to inform oral rabies vaccination efforts such as refining bait densities and timing of bait distribution in these habitats.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

A comparison of cost and quality of three methods for estimating density for wild pig (Sus scrofa)

A critical element in efective wildlife management is monitoring the status of wildlife populations; however, resources to monitor wildlife populations are typically limited. We compared cost efectiveness of three common population estimation methods (i.e. non-invasive DNA sampling, camera sampling, and sampling from trapping) by applying them to wild pigs (Sus scrofa) across three habitats in South Carolina, U.S.A where they are invasive. We used mark-recapture analyses for fecal DNA sampling data, spatially-explicit capture-recapture analyses for camera sampling data, and a removal analysis for removal sampling from trap data. Density estimates were similar across methods. Camera sampling was the least expensive, but had large variances. Fecal DNA sampling was the most expensive, although this technique generally performed well. We examined how reductions in efort by method related to increases in relative bias or imprecision. For removal sampling, the largest cost savings while maintaining unbiased density estimates was from reducing the number of traps. For fecal DNA sampling, a reduction in efort only minimally reduced costs due to the need for increased lab replicates while maintaining high quality estimates. For camera sampling, efort could only be marginally reduced before inducing bias. We provide a decision tree for researchers to help make monitoring decisions.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2021

Trap-Assisted Dopant Compensation Prevents Shunting in Poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Using a trap-assisted compensation model, we explain why polycrystalline Si (poly-Si) passivating contacts are able to achieve low leakage current between the doped fingers of interdigitated back contact (IBC) monocrystalline Si solar cells despite mixing of boron and phosphorus dopants in the isolation region. The fill factor of IBC solar cells is strongly affected by the electrical isolation region between n- and p-type fingers, as this region is critical in minimizing shunting losses. During fabrication of monocrystalline Si solar cells with poly-Si passivating contacts, the intrinsic poly-Si isolation region inevitably gets contaminated with both p- and n-type dopants. Using dopant profiles measured with time-of-flight secondary ion mass spectrometry and scanning probe measurements of the isolation region, we demonstrate that despite the dopant spreading during cell processing, a well-compensated region between the doped fingers exists that prevents shunting. The trap-assisted dopant compensation mechanism significantly widens the compensated region to tens of microns, where the residual dopant densities are below the trap density. This enables a high-resistivity region, resulting in low shunt current. Using one-dimensional (1-D) finite element diode simulations, we identify the design parameters and experimental conditions under which a sufficiently resistive region can form. Furthermore, our measurements of 2-D local resistivity and work function maps across the isolation region using scanning spreading resistance microscopy and Kelvin probe force microscopy demonstrate the existence of a highly resistive, wide compensated region and confirm our proposed compensation mechanism. For our structures, this region is ~25 µm in width within a ~150 µm wide finger isolation region with nearly 3 orders of magnitude higher resistivity than the regions dominated by a single type of dopant.

14 SOLAR ENERGY↗
DOE OSTI2025

Low Frequency Vibrational Modes of Two-Dimensional Lead-Free Metal Halide Double Perovskites

2D layered double perovskites of (S-MPA) 4 AgBiI 8 (MPA-AgBiI 8 ) and (S-MPA) 4 CuBiI 8 (MPA-CuBiI 8 ) (S-MPA, S-β-methylphenethylammonium) were synthesized with a hydrothermal method. The crystal structure of MPA-AgBiI 8 was determined using single-crystal X-ray diffraction (scXRD). Powder XRD (pXRD) data suggest that the crystal structure of MPA-CuBiI 8 is more complex than that of MPA-AgBiI 8 . UV-Vis electronic absorption spectra of these perovskites reveal a bandgap of 2.03 eV for both. Short exciton lifetime from time-resolved photoluminescence (TRPL) results and low PL intensity of the Cu-based perovskite suggest a high density of trap states within the bandgap. Low frequency Raman spectra of both materials show distinct peaks and a slightly higher frequency for the Cu-based perovskite than the Ag-based perovskite. Density functional theory (DFT) calculations were conducted to simulate the low frequency Raman spectra and help explain the different phonon modes, which are collective vibrations of metal halide bond bending and stretching within the Ag- and Cu-centered octahedra coupled with MPA libration and twisting within the inorganic layer. The DFT theory also quantified octahedral distortions in the two perovskites. Furthermore, this combined experimental and computational study provides new insights into the low frequency vibrations of 2D perovskites.

Halogens↗
DOE OSTI2022

No ball milling needed: Alternative ODS steel manufacturing with gas atomization reaction synthesis (GARS) and friction-based processing

Oxide dispersion strengthened (ODS) steels are promising structural materials for future fusion reactors. The high-density (~10 23 /m 3 ) of highly stable Y-(Ti)-O nano-oxides provide high sink strength for radiation resistance and high-temperature (> 650 °C) creep strength. Concomitantly, helium management is enabled by trapping high density (~10 23 /m 3 ) of small (< 3 nm) helium bubbles in the vicinity of nano-oxides. However, conventional route of making ODS steels involves prolonged ball milling, canning, degassing, and laborious thermo-mechanical processing (TMP). Such route, especially the batch-by-batch ball milling step, faces persistent challenge with scalability and high costs. Gas atomization reaction synthesis (GARS) method has demonstrated the potential of making precursor ODS steel powders without ball milling, but the nano-oxide density was around 10 21 /m 3 in the final consolidated form by conventional TMP. Taking advantage of GARS precursor powder, we use friction-based processing, including friction consolidation and extrusion, to manufacture ODS steel with further improved nano-oxide characteristics. Here, preliminary results showed that Y/Ti/O species were intimately mixed and rapidly reacted to form nano-oxides with a number density of ~10 22 /m 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2025

Deuterium trapping mechanisms in reduced activation ferritic martensitic steels and their correlation with mechanical strengthening

Development of high-strength materials often involves introduction of additional strengthening microstructures that also serve as tritium trapping sites. Such additions in fusion material development could degrade the fuel efficiency in fusion reactors and raise radiological concerns. The contribution of individual microstructure features in hydrogen trapping must be evaluated to ensure fuel efficiency and radiological safety. This study explores the mechanistic origins of deuterium trapping in reduced-activation ferritic–martensitic steels and its correlation to mechanical strengthening. A series of model alloys and engineering steels were fabricated and subjected to different heat treatments to control deuterium trapping site density. Deuterium retention was evaluated using D 2 gas charging and thermal desorption spectroscopy, focusing on the role of grain boundary, dislocation, M 23 C 6 precipitates, and TiC precipitates. Multiscale microstructure characterization and synchrotron X-ray diffraction were performed to characterize microstructure, which was correlated to the deuterium retention property. Results show that TiC precipitates exhibit the highest deuterium trapping capacity, followed by M 23 C 6 precipitates. Dislocation and grain boundary demonstrate the lowest and similar efficiencies. Furthermore, the relationship of trapping quantity and mechanical strengthening of these microstructure features was quantified, demonstrating that TiC precipitates offer highest deuterium trapping per unit of mechanical strengthening.

Retention↗
DOE OSTI2021

Effects of emitting surfaces and trapped ions on the sheath physics and current flow in multidimensional plasma systems

Recent one-dimensional simulations of planar sheaths with strong electron emission have shown that trapping of charge-exchange ions causes transitions from space-charge limited (SCL) to inverse sheaths. However, multidimensional emitting sheath phenomena with collisions remained unexplored, due in part to high computational cost. As such, we developed a novel continuum kinetic code to study the sheath physics, current flow and potential distributions in two-dimensional unmagnetized configurations with emitting surfaces. For small negatively biased thermionic cathodes in a plasma, the cathode sheath can exist in an equilibrium SCL state. The SCL sheath carries an immense density of trapped ions, neutralized by thermoelectrons, within the potential well of the virtual cathode. For further increases of emitted flux, the trapped ion cloud expands in space. The trapped ion space charge causes an increase of thermionic current far beyond the saturation limit predicted by conventional collisionless SCL sheath models without ion trapping. For sufficiently strong emission, the trapped ion cloud consumes the entire 2D plasma domain, forming a mode with globally confined ions and an inverse sheath at the cathode. In situations where the emitted flux is fixed and the bias is swept (e.g. emissive probe), the trapped ions cause a large thermionic current to escape for all biases below the plasma potential. Strong suppression of the thermionic emission, required for the probe to float, only occurs when the probe is above the plasma potential.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Using cyclotron radiation emission for ultra-high resolution x-ray spectroscopy

Abstract Cyclotron radiation emission spectroscopy (CRES) is an approach to measuring the energy of an electron trapped in an externally applied magnetic field. The bare electron can come from different interactions, including photoelectric absorption, Compton scatters, beta decay, and pair production. CRES relies on measuring the frequency of the electron’s cyclotron motion, and because the measurement times extend over 10 6 –10 7 cycles, the energy resolution is on the order of a single electronvolt. To date, CRES has only been performed on internal beta-emitting radioisotopes, but the technology can be applied to x-ray spectrometery through appropriate selection of a target gas and sufficient intensity of the distinct x-ray source. The applications of this technology range from high-precision measurements of atomic energy levels to calibrations of basic science experiments, to trace element identification. In this work we explore the use of CRES for x-ray spectroscopy within the rubric of measuring the energy levels of argon. Though the energy levels of argon are well established, we adopt this motivation as an example question around which a detector may be designed. The issues we explore include target material, density, electron trapping depth, noise levels, and overall efficiency. We also discuss spectral deconvolution and how the multiple peaks obtained from a single target/source pair can be used to enhance the robustness of the measurement.

07 ISOTOPE AND RADIATION SOURCES↗