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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗
NASA NTRS1980

Concentrator designs for space photovoltaic arrays

The unique set of operating constraints determining key concentrating solar array design characteristics for low earth orbital, geosynchronous and interplanetary missions are considered. Minimum cost is crucial at low earth orbits, performance and design life are needed in geosynchronous orbit, and structural pointing accuracy and radiation resistance are essential in interplanetary designs. The impact of such emerging technologies as ultrathin cells, gallium arsenide cells and cold mirrors is discussed. Power-to-mass ratios as high as 200 W per kilogram at a distance of 1 astronomical unit from the sun are possible, using concentrators in conjunction with gallium arsenide arrays.

Rockey, D. E.↗
NASA NTRS1983

CLEFT Process for GaAs Solar Cells

CLEFT (cleavage of lateral epitaxial films for transfer) process involves growing ultrathin gallium arsenide (GaAs solar cell on much thicker layer of same material). Growth method is completed solar cell easily separated by cleaving from much thicker substrate. Thick substrate is reusable in making additional cells, which reduces cell material cost.

Fan, J. C. C.↗
NASA NTRS1982

Membrane separation technology in the 1980s

The current status of membrane technology is assessed and industrial processes in which membrane technology could effect energy savings or other advantages are identified. The extension of current trends is recommended; i.e., the development of ultrathin and highly permselective membranes, the use of specific carriers to enhance permselectivity and permit 'uphill' diffusion, and the improvement of separation efficiency. Membranes are predicted to be important in biotechnology and in the production of solar energy. Guidelines indicating where and how to look for opportunities where evolving membrane technology might fit are provided.

Lonsdale, H. K.↗
NASA NTRS1982

Space solar cell technology development - A perspective

The developmental history of photovoltaics is examined as a basis for predicting further advances to the year 2000. Transistor technology was the precursor of solar cell development. Terrestrial cells were modified for space through changes in geometry and size, as well as the use of Ag-Ti contacts and manufacture of a p-type base. The violet cell was produced for Comsat, and involved shallow junctions, new contacts, and an enhanced antireflection coating for better radiation tolerance. The driving force was the desire by private companies to reduce cost and weight for commercial satellite power supplies. Liquid phase epitaxial (LPE) GaAs cells are the latest advancement, having a 4 sq cm area and increased efficiency. GaAs cells are expected to be flight ready in the 1980s. Testing is still necessary to verify production techniques and the resistance to electron and photon damage. Research will continue in CVD cell technology, new panel technology, and ultrathin Si cells.

Scott-Monck, J.↗
NASA NTRS1982

High efficiency, low cost thin GaAs solar cells

The feasibility of fabricating space-resistant, high efficiency, light-weight, low-cost GaAs shallow-homojunction solar cells for space application is demonstrated. This program addressed the optimal preparation of ultrathin GaAs single-crystal layers by AsCl3-GaAs-H2 and OMCVD process. Considerable progress has been made in both areas. Detailed studies on the AsCl3 process showed high-quality GaAs thin layers can be routinely grown. Later overgrowth of GaAs by OMCVD has been also observed and thin FaAs films were obtained from this process.

Fan, J. C. C.↗
NASA NTRS1982

New directions in solar array development

A broad overview is presented of current and near-term solar array technology that could be suitable for space use. Particular consideration is given to such advanced concepts as high power arrays, concentrator arrays, and ultrathin solar cell arrays. It is concluded that if such ambitious concepts as geosynchronous space platforms, orbital space stations, and alternate forms of propulsion are realized, the type of new technology described in this paper may find acceptance for space.

Scott-Monck, J.↗
NASA NTRS1982

Optimal design of high-efficiency tandem cells

Computer analysis indicates that a substantial increase in solar cell conversion efficiencies can be achieved by using two-cell, multi-bandgap tandem structures instead of single-junction cells. Practical AM1 efficiencies of about 30 percent at one sun and over 30 percent at multiple suns are to be expected. The further increases in efficiency calculated for a three-cell tandem structure are much smaller and may not justify the added complexity. For inexpensive two-cell tandem modules, Si is preferred for the bottom cell, and the top-cell material should have a bandgap of 1.75 to 1.80 eV. The GaAs-AlAs and GaAs-GaP systems are very attractive candidates for the top cell. Significant advances have been achieved in growing GaAs on Ge-coated Si substrates (for the two-terminal, two-cell structure) and in growing free-standing ultrathin GaAs layers (for the two-terminal or four-terminal structures). These advances should be transferable to the GaAs-AlAs and GaAs-GaP systems.

Fan, J. C. C.↗
NASA NTRS1984

Trends in Space Photovoltaic Technology

The current status of silicon and gallium arsenide (GaAs) solar cell technology is described, and anticipated near and far term projections of photovoltaic cell performance are provided. It is shown that current ultrathin silicon and near term GaAs solar cells provide substantial enhancement of planar solar array performance. The advantages of utililizing GaAs cells in high concentration arrays is discussed. Evidence is provided to support the view that photovoltaic offers a viable means of supporting long term space objectives.

Scott-Monck, J. A.↗
NASA NTRS1985

STACBEAM 2

An investigation being conducted by Astro Aerospace Corporation (Astro) for Jet Propulsion Laboratory in which efficient structures for geosynchronous spacecraft solar arrays are being developed is discussed. Recent developments in solar blanket technology, including the introduction of ultrathin (50 micrometer) silicon solar cells with conversion efficiencies approaching 15 percent, have resulted in a significant increase in blanket specific power. System specific power depends not only on blanket mass but also on the masses of the support structure and deployment mechanism. These masses must clearly be reduced, not only to minimize launch weight, but also to increase array natural frequency. The solar array system natural frequency should be kept high in order to reduce the demands on the attitude control system. This goal is approached by decreasing system mass, by increasing structural stiffness, and by partitioning the blanket. As a result of this work, a highly efficient structure for deploying a solar array was developed.

Adams, L. R.↗
NASA NTRS1984

Recent developments in high performance planar solar array technology

The NASA-OAST high performance solar array program is described. The rationale for this effort, its objectives and strategy, as well as progress made during the past 5 years, are discussed. It is shown that welded, ultrathin silicon solar cell array blankets are on the verge of technical readiness. It is argued that the most reasonable approach to achieving more significant performance improvements (to about 300 W/kg) involves the development of a higher efficiency (16-18 percent AM0) solar cell and a lightweight, efficient structure.

Scott-Monck, J.↗
NASA NTRS1985

Preparation and analysis of particulate metal deposits

Small particles and clusters of palladium were grown by deposition from the vapor phase under ultrahigh vacuum conditions. Amorphous and crystalline support films of Al2O3 and ultrathin amorphous carbon films were used as substrate materials. The growth of the metal deposit was monitored in situ by scanning transmission diffraction of energy-filtered 100 kV electrons and high resolution transmission electron microscopy (TEM) analysis was performed in a separate instrument. It was established by in situ TEM, however, that the transfer of specimens in this case did not unduly affect the size and distribution of deposit particles. It was found that the cleanness, stoichiometry, crystallinity and structural perfection of the support surface play an essential role in determining the crystalline perfection and structure of the particles. The smallest palladium clusters reproducibly prepared contained not more than six atoms but size determinations below 1 nm average particle diameter are very problematic with conventional TEM. Palladium particles grown on carbon supports feature an impurity-stabilized mosaic structure.

Poppa, H.↗
NASA NTRS1987

Ultralight amorphous silicon alloy photovoltaic modules for space applications

Ultralight and ultrathin, flexible, rollup monolithic PV modules have been developed consisting of multijunction, amorphous silicon alloys for either terrestrial or aerospace applications. The rate of progress in increasing conversion efficiency of stable multijunction and multigap PV cells indicates that arrays of these modules can be available for NASA's high power systems in the 1990's. Because of the extremely light module weight and the highly automated process of manufacture, the monolithic a-Si alloy arrays are expected to be strongly competitive with other systems for use in NASA's space station or in other large aerospace applications.

Hanak, J. J.↗
NASA NTRS1986

Development of flight ready fifty-micron-thick silicon solar cell array module technology

The development of ultrathin silicon solar cell array modules from initial design to flight testing is discussed. Three 80-cell modules were subjected to the thermal soak test, the LEO thermal cycle test, and the solar array flight experiment, and six 48-cell welded modules were evaluated in the geosynchronous orbit thermal cycle test. It is observed that the electrical performance of the modules was not affected by the different environmental conditions. The automatic assembly of the cell modules, in particular the welding and solar cell glassing operation, is described. The specific power capabilities of Kapton, Kapton-Kevlar-Kapton, Kapton-graphite-Kapton, and Kapton-graphite-aluminum honeycomb-graphite solar array designs are assessed.

Patterson, R. E.↗
NASA NTRS1988

Electronic states of semiconductor-metal-semiconductor quantum-well structures

Quantum-size effects are calculated in thin layered semiconductor-metal-semiconductor structures using an ideal free-electron model for the metal layer. The results suggest new quantum-well structures having device applications. Structures with sufficiently high-quality interfaces should exhibit effects such as negative differential resistance due to tunneling between allowed states. Similarly, optical detection by intersubband absorption may be possible. Ultrathin metal layers are predicted to behave as high-density dopant sheets.

Huberman, M. L.↗
NASA NTRS1988

Supercomputer chemistry at the University of Minnesota

The focus of cluster chemistry studies at the University of Minnesota is on the adsorption of small hydrocarbon molecules on metal and graphite surfaces, and on the substitution defects in diamond and silicon. Of particular interest is the study of very large systems such as the C60 molecule and the C150H30 molecule. Many of the properties of such clusters converge extremely slowly toward bulk values. Ultrathin films and microporous media are discussed as well as the Brownian dynamics of polymers.

Almlof, Jan↗
NASA NTRS1989

Comparative functional ultrastructure of two hypersaline submerged cyanobacterial mats - Guerrero Negro, Baja California Sur, Mexico, and Solar Lake, Sinai, Egypt

The ultrastructure of the submerged microbial mat from the Solar Lake (SL), Egypt, was compared to that of samples from the Guerrero Negro (GN), Mexico, salt pans. The locations and distributions of the main organisms were determined light microscopy, and the corresponding ultrathin sections were examined under TEM; chemical microprofile analyses were carried out on the day of sampling for microscopic studies. Both communities were found to be dominated by Microleus chthonoplastes, although several morphological species found in the GN mat were absent from the SL mat, including the Tropica nigra and the 'big' Microleus chthonoplastes component. The chemical microprofiles of oxygen, sulfide, pH, and the oxygenic photosynthesis in the two mats were virtually identical. In both mats, the photic zone was restricted to the upper 800 microns of the mat, and oxygenic photosynthesis was detected down to 600 microns.

D'Amelio, Elisa D'antoni↗
NASA NTRS1990

AIAs Diffusion/Schottky Barrier on GaAs

Ultrathin epitaxial film of AIAs deposited on GaAs substrate to serve as Schottky barrier and/or as barrier to diffusion. Deposited without interrupting processing vacuum in which substrate deposited and in which any subsequent layers deposited. In new technique, epitaxial film of AIAs deposited directly on GaAs substrate to depth of only two atomic layers - less than 1 nanometer thick. Film thin enough so it does not constitute electronic barrier, but thick enough to act as barrier to interdiffusion of gold and GaAs. Film also used as barrier to interdiffusion of dopants at heterojunctions.

Kaiser, William J.↗