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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

High-frequency measurements of multilayer ceramic capacitors

A resonant coaxial transmission line, short circuited at one end and open circuited at the other, whose fundamental resonant frequency and Q factor are known, is perturbed with a test capacitor connected either in series at the shorted end of the line, or in shunt at the open end. Measuring the Q factor of the system with the delta f technique yields the effective series resistance, capacitance, and the Q factor of the test specimen. This method of measurement has the advantage that there are no adjustable elements to alter circuit conditions in an unprescribed way, the only variable is the frequency which can be measured with an uncertainty of less than 1 ppm, the loss of the line as a function of frequency is quite predictable, and the Q factor of the line can be made sufficiently high to support accurate measurements of low loss capacitors.

Lafferty, R. E.↗
NASA NTRS1994

Two-Stage Series-Resonant Inverter

Two-stage inverter includes variable-frequency, voltage-regulating first stage and fixed-frequency second stage. Lightweight circuit provides regulated power and is invulnerable to output short circuits. Does not require large capacitor across ac bus, like parallel resonant designs. Particularly suitable for use in ac-power-distribution system of aircraft.

Stuart, Thomas A.↗
NASA NTRS1978

A programmable power processor for a 25 kW power module

The paper presents the concept and major design problems of a programmable power processor for the 25 kW electrical power system for the Shuttle Orbiter. The load will be handled by three parallel power stages operated in phase sequence with each power transistor having its own commutating diode and filter inductor. The power stages will be run at a fixed frequency of 10 kHz with the 'on'-time variable up to 100%. The input filter bank in the breadboard programmable power processor is planned to be a series-parallel combination of tantalum cased tantalum wet-slug capacitors.

Kapustka, R. E.↗
DOE OSTI2025

Study of the Design and Characteristics of a Modified Pulsed Plasma Thruster with Graphite and Tungsten Trigger Electrodes

The paper presents experimental results for a modified pulsed plasma thruster (PPT) with solid propellant, using a coaxial anode–cathode design. Graphite from pencil leads served as propellant, and a tungsten trigger electrode was tested to reduce carbonization effects. Experiments were performed in a vacuum chamber at 0.001 Pa, employing diagnostics such as discharge current/voltage recording, power measurement, ballistic pendulum, time-of-flight (TOF) method, and a Faraday cup. Current and voltage waveforms matched an oscillatory RLC circuit with variable plasma channel resistance. Key discharge parameters were measured, including current pulse duration/amplitude and plasma channel formation/decay dynamics. Impulse bit values, obtained with a ballistic pendulum, reached up to 8.5 μN·s. Increasing trigger capacitor capacitance reduced thrust due to unstable “pre-plasma” formation and partial pre-discharge energy loss. Using TOF and Faraday cup diagnostics, plasma front velocity, ion current amplitude, current density, and ion concentration were determined. Tungsten electrodes produced lower charged particle concentrations than graphite but offered better adhesion resistance, minimal carbonization, and stable long-term performance. The findings support optimizing trigger electrode materials and PPT operating modes to extend lifetime and stabilize thrust output.

Faraday cup↗
NASA NTRS1994

Steering capaciflector sensor

A capacitive type proximity sensor having substantial range and sensitivity between a machine and an intruding object in the immediate vicinity of the machine and having a steerable sensing field has an outer electrical conductor on the machine forming one electrode of a sensor capacitor, the other electrode is the object. The outer conductor is a thin sheet of conductive material with a pair (or more) of intermediate electrical conductors located between the outer conductor and the machine. The pair of intermediate electrical conductors are in close proximity to each other and together form a surface having a size substantially larger than the outer conductor to act as a shield for reducing the parasitic capacitance between the outer conductor and the machine and to steer the sensor field. The pair of intermediate conductors are thin sheets of conductive material substantially wider than the first conductor. The outer and pair of intermediate conductors are attached to a surface on the machine in electrical isolation and with no gaps between the conductors and no gap between the surface and the pair of intermediate conductors. The outer and pair of intermediate conductors are also in conformance with each other and the surface of the machine, and the surface of the machine acts as a ground plane. Variable gain voltage follower circuits are used for coupling, in phase, the instantaneous voltage at the outer electrical conductor to the pair of intermediate electrical conductors and a signal generator is coupled to the outer conductor and is responsive to the capacitance of the sensor capacitor for generating a control signal to the machine.

Jenstrom, Del T.↗
DOE OSTI2026

Flashlamp drive system for a high-energy 10–100 kHz pulse-burst Nd:YAG laser

We present the design of the flashlamp drive system for the NG100 laser, a 1 J/pulse, 10–100 kHz, pulse-burst Nd:YAG laser system being developed for application in a Thomson scattering plasma diagnostic. This flashlamp drive system is under active development, with a prototype now being constructed. The flashlamp drive system is modular, with each module capable of driving a series pair of linear flashlamps. Each drive module contains and is controlled by a dedicated Analog Regulator Controller. Thus each module is independently operable and controllable. This modular approach imposes no intrinsic limit to the number of modules that may be applied to drive the flashlamp pairs in a laser system. Each flashlamp drive module has a switch-regulated topology. An 1800 V main capacitor bank provides 25 kJ of energy storage, while a lower voltage output capacitor bank provides filtering and the initial energy delivered to the flashlamps at the start of the drive pulse. The main bank is recharged after each flashlamp drive pulse. As energy is drawn from the output bank by the flashlamps, an IGBT switching regulator feeds current from the main bank through an inductor to replenish the output capacitor bank. The rate of replenishment is feedback-controlled to maintain a regulated supply of power to the flashlamp load, with a setpoint range of 0.07 to 1.65 MW. An Analog Regulator Controller produces two-state variable pulse width feedback switching of the regulator IGBT. The switching frequency is ≤ 20 kHz, dynamically adjusted to limit ripple of the flashlamp power to ±3% statistical standard deviation of mean. For development or troubleshooting, each module is operable independent of the laser digital control system (microcontroller and FPGA).

Plasma diagnostics - interferometry↗
NASA NTRS1992

Electrical capacitance clearanceometer

A hot gas turbine engine capacitive probe clearanceometer is employed to measure the clearance gap or distance between blade tips on a rotor wheel and its confining casing under operating conditions. A braze sealed tip of the probe carries a capacitor electrode which is electrically connected to an electrical inductor within the probe which is inserted into a turbine casing to position its electrode at the inner surface of the casing. Electrical power is supplied through a voltage controlled variable frequency oscillator having a tuned circuit in which the probe is a component. The oscillator signal is modulated by a change in electrical capacitance between the probe electrode and a passing blade tip surface while an automatic feedback correction circuit corrects oscillator signal drift. A change in distance between a blade tip and the probe electrode is a change in capacitance therebetween which frequency modulates the oscillator signal. The modulated oscillator signal which is then processed through a phase detector and related circuitry to provide an electrical signal is proportional to the clearance gap.

Hester, Norbert J.↗
DOE OSTI2024

Probing electronic and dielectric properties of ultrathin Ga 2 O 3 /Al 2 O 3 atomic layer stacks made with in vacuo atomic layer deposition

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga 2 O 3 /Al 2 O 3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga 2 O 3 /Al 2 O 3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga 2 O 3 or Al 2 O 3 . Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga 2 O 3 /Al 2 O 3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga 2 O 3 /Al 2 O 3 ALS can have tunable bandgaps (E g ) between ~2.0 eV for 100% Ga 2 O 3 and ~3.4 eV for 100% Al 2 O 3 . With variable ratios of Ga:Al, the measured E g exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant of ultrathin Ga 2 O 3 /Al 2 O 3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga 2 O 3 and Al 2 O 3 atomic layer numbers from 9.83 for 100% Ga 2 O 3 to 8.28 for 100% Al 2 O 3 . The high ε leads to excellent effective oxide thickness ~1.7–2.1 nm for the ultrathin Ga 2 O 3 /Al 2 O 3 ALS, which is comparable to that of high-K dielectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Chemical Profiles of the Oxides on Tantalum in State of the Art Superconducting Circuits

Abstract Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. It is recently shown that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, the chemical profile of the surface of tantalum films grown on c‐plane sapphire using variable energy X‐ray photoelectron spectroscopy (VEXPS) is studied. The different oxidation states of tantalum that are present in the native oxide resulting from exposure to air are identified, and their distribution through the depth of the film is measured. Furthermore, it is shown how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. Correlating these measurements with detailed measurements of quantum devices may elucidate the underlying microscopic sources of loss.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electromechanical memcapacitor model offering biologically plausible spiking.

In this article, we introduce a new nanoscale electromechanical device - a leaky memcapacitor - and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movableplate capacitor that becomes quite conductive when the plates come close to each other. The equivalent circuit of the leaky memcapacitor involves a memcapacitive and memristive system connected in parallel. In the leaky memcapacitor, resistance and capacitance depend on the same internal state variable, which is the displacement of the movable plate. We have performed a comprehensive analysis showing that several types of spiking observed in biological neurons can be implemented with the leaky memcapacitor. Significant attention is paid to the dynamic properties of the model. As in leaky memcapacitors the capacitive, leaking resistive, and reset functionalities are implemented naturally within the same device structure, their use will simplify the creation of spiking neural networks.

Zhang, Zixi↗
DOE OSTI2023

Grid-Enhanced, Mobility-Integrated Network Infrastructures for Extreme Fast Charging (GEMINI-XFC)

GEMINI-XFC will use first-of-a-kind integrated high-fidelity grid and transport modeling to identify effective pathways for widespread electrification, to design and evaluate integrated vehicle-grid control schemes, and to optimize electric vehicle integration at a full regional scale with individual customer resolution. Control variables will include: Charging station design and planning (where and what kind of charging stations); EV route scheduling considering grid "status"; and Dispatch of behind-the-meter energy storage and legacy voltage control actuators (on-load tap changes, voltage regulators, capacitors).

DIRECT ENERGY CONVERSION,POWER TRANSMISSION AND DI↗
NASA NTRS1979

Three-function signal generator

Variable-frequency circuit develops sine square and triangular waveforms. Three-function generator used variable-rate integrator to generate triangular wave and zero-crossing detector to develop square wave. Sine wave generator uses diode matrix to operate on triangular wave, thus with design harmonic distortion in output is less then one percent. By changing values of outboard resistors and capacitors, same design can be used at higher frequencies.

Kopp, G. F.↗
NASA NTRS1989

A 2.5 kW cascaded Schwarz converter for 20 kHz power distribution

Because it avoids the high currents in a parallel loaded capacitor, the cascaded Schwarz converter should offer better component utilization than converters with sinusoidal output voltages. The circuit is relatively easy to protect, and it provides a predictable trapezoidal voltage waveform that should be satisfactory for 20-kHz distribution systems. Analysis of the system is enhanced by plotting curves of normalized variables vs. gamma(1), where gamma(1) is proportional to the variable frequency of the first stage. Light-load operation is greatly improved by the addition of a power recycling rectifier bridge that is back biased at medium to heavy loads. Operation has been verified on a 2.5-kW circuit that uses input and output voltages in the same range as those anticipated for certain future spacecraft power systems.

Shetler, Russell E.↗
DOE OSTI2023

Techno-economic Analysis of the Cryogenic Flux Capacitor Compared to Other forms of Hydrogen Production and Storage

The Cryogenic Flux Capacitor (CFC) is a cold, dense energy storage core that is being studied in the cryo-compressed, about 300 bar and 80K, region of gaseous hydrogen (GH2) storage and liquid hydrogen (LH2) region near the normal boiling point. The hydrogens storage is improved by physically bonding the molecules within the nanoscale pores of the aerogel composite blanket material. The process of bonding or debonding is governed by principles of physical adsorption (physisorption) and thermodynamics. The large surface area afforded by the nanoporous aerogel (~1,000 m2/g) allows its storage performance to easily exceed capacities of high-pressure GH2 storage for an equivalent volume. With the integrated aerogel, subscale tests have shown that storage is increased by about 49% over a simple tank filled with GH2 at the same operating temperature and pressure. For LH2 conditions, the CFC is shown to operate at equivalent densities. For the techno-economic analysis (TEA), the source of hydrogen is compared between onsite steam methane reforming (SMR) and onsite solar photovoltaic (PV) panels providing power to electrolyzers to produce GH2. The TEA compares pure hydrogen burning in a combined cycle gas turbine (CCGT) to hydrogen fuel cells with an overall net power output of 650 MW. The SMR system uses natural gas as an input and includes a carbon capture and storage (CCS) system. The levelized cost of electricity is developed based on the capital cost and operating cost of the systems. Sensitivities are discussed around the cost of natural gas, ranging from 1.93 USD per MMBTU to 6.75 USD per MMBTU, and carbon dioxide disposal, ranging from 7 USD per tonne to 10 USD per tonne. For comparison to the conventional CCGT baseline, a baseload scenario is adopted with 85% capacity factor. The results of the study show that onsite hydrogen generation from SMR is about 1 to 3 USD per kg over the life of the plant and the PV hydrogen production produces at 4 to 5 USD per kg. The cost of storage for CFC is compared to other systems, including high-pressure GH2 and atmospheric LH2. The system is shown to provide the lowest costs for all these options at the grid scale, due to its higher capacity than high-pressure GH2 and ability to operate at 80K, receiving refrigeration from liquid nitrogen systems reducing capital and operating costs when compared LH2 storage systems. SMR is competitive with CCGT at the gas prices, both of which have lower LCOE than the PV system. When accounting for variability in gas prices, the PV and electrolyzer system is less sensitive to these changes and provides the lowest LCOE across the whole range.

08 HYDROGEN↗
NASA NTRS1982

Parametric study of minimum converter loss in an energy-storage dc-to-dc converter

Through a combination of analytical and numerical minimization procedures, a converter design that results in the minimum total converter loss (including core loss, winding loss, capacitor and energy-storage-reactor loss, and various losses in the semiconductor switches) is obtained. Because the initial phase involves analytical minimization, the computation time required by the subsequent phase of numerical minimization is considerably reduced in this combination approach. The effects of various loss parameters on the optimum values of the design variables are also examined.

Wong, R. C.↗
NASA NTRS1981

A cause of the non-solderability of ceramic capacitor terminations

The results of an analysis into the cause of the non-solderability of multiple defective part lots from two capacitor manufacturers are described. This analysis consisted of visual, scanning electron microscopic, surface, and metalographic examinations and analyses. The results indicated that non-solderability results from areas of excess porosity in the termination which are caused by segregation of ink constituents during manufacturing. This segregation can be minimized by proper monitoring and control of process variables; where excess porosity does occur, solderability can be improved by proper precleaning of parts.

Cozzolino, M. J.↗
DOE OSTI2024

Electrochemical Capacitance Traces with Interlayer Spacing in Two‐dimensional Conductive Metal–Organic Frameworks

Abstract Electrically conductive metal–organic frameworks (MOFs) are promising candidates for electrochemical capacitors (EC) for fast energy storage due to their high specific surface areas and potential for redox activity. To maximize energy density, traditional inorganic pseudocapacitors have utilized faradaic processes in addition to double‐layer capacitance. Although conductive MOFs are usually comprised of redox active ligands which allow faradaic reactions upon electrochemical polarization, systematic studies providing deeper understanding of the charge storage processes and structure‐function relationships have been scarce. Here, we investigate the charge storage mechanisms of a series of triazatruxene‐based 2D layered conductive MOFs with variable alkyl functional groups, Ni 3 (HIR 3 ‐TAT) 2 (TAT=triazatruxene; R=H, Et, n ‐Bu, n ‐Pent). Functionalization of the triazatruxene core allows for systematic variation of structural parameters while maintaining in‐plane conjugation between ligands and metals. Specifically, R groups modulate interlayer spacing, which in turn shifts the charge storage mechanism from double‐layer capacitance towards pseudocapacitance, leading to an increase in molar specific capacitance from Ni 3 (HIH 3 ‐TAT) 2 to Ni 3 (HIBu 3 ‐TAT) 2 . Partial exfoliation of Ni 3 (HIBu 3 ‐TAT) 2 renders redox active ligand moieties more accessible, and thus increases the dominance of faradaic processes. Our strategy of controlling charge storage mechanism through tuning the accessibility of redox‐active sites may motivate further design and engineering of electrode materials for EC.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗