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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO 3 Film

A ferroelectric domain wall memory device exploits the presence (or absence) of domain walls as the basis for information storage. Although structural defects strongly influence ferroelectric domain wall nucleation and growth, this correlation is far from being fully understood. For example, a single defect can play opposing roles: it can act as a nucleation site to initiate domain switching or, conversely, serve as a pinning center inhibiting domain wall motion. This is particularly the case for antiphase boundaries (APBs), whose influence on switching remains relatively unexplored despite being ubiquitous in oxide perovskite ferroelectrics. Here, we use aberration-corrected scanning transmission microscopy and in situ transmission electron microscopy under an applied bias to extensively characterize the influence of an APB on the switching behavior in a (110)-oriented BiFeO 3 thin film. We demonstrate that deterministic nucleation occurs in the proximity of a vertically oriented APB, following which domain growth occurs laterally in a symmetric fashion. Atomic-scale structural analysis reveals that the shear operation vector for the APB is 1/2[110]; this half-unit-cell shift extends over a few nanometers, implying that the APB plane is inclined toward the imaging direction. The symmetric switching observation is attributed to local inhomogeneous lattice strain and a reduction of polarization caused by the APB. These results demonstrate that an extended structural defect can be used as an active switching element rather than a stumbling block in reprogrammable domain-wall-based devices. Ultimately, this will expand the capabilities of ferroelectric thin films for future electronic devices based on ferroelectric domain walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Green synthesis and characterization of nontoxic L-methionine capped silver and gold nanoparticles

The simple green method for synthesis of stable L-Methionine (L-Met) capped silver (Ag@LM NPs) and gold (Au@LM NPs) nanoparticles (NPs) without adding any additional reduction agent or stabilizer was developed. Colloidal dispersions were characterized by UV–Vis spectrophotometry. The size and spherical shape of NPs were evaluated by transmission electron microscopy. Their surface covering was confirmed by atomic force microscopy, Fourier transform infrared spectroscopy, dynamic light scattering, and zeta potential measurements. Density functional theory calculations pointed that the preferential adsorption mode of L-Met on both Ag and Au surfaces was a vertical binding geometry via –NH2 group, while horizontal binding mode via [sbnd]S[sbnd] and –NH2 groups is also possible. The genotoxicity (evaluated by the micronucleus assay) of NPs, as well as their effects on some oxidative stress parameters (catalase activity, malondialdehyde level), were assessed in vitro using human peripheral blood cells as a model system. The influence of NPs on the morphology of lymphocyte cells studied using atomic force microscopy revealed that the membrane of cells remained unaffected after the treatment with NPs. When considering the effects of NPs on catalase activity and malondialdehyde level, neither particle type promoted oxidative stress. However, the treatment of lymphocytes with Ag@LM NPs induced a concentration-dependent enhancement of the micronuclei incidence and suppression of the cell proliferation while Au@LM NPs promoted cell proliferation, with no significant effects on micronuclei formation. The Ag@LM NPs were more prone to induce DNA damage than Au@LM NPs, which makes the latter type more suitable for further studies in nano-medicine. © 2019.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2025

Epitaxial stabilization and oxygen vacancy control of EuNiO 3 thin films

Rare-earth nickelates exhibit valuable behavior for neuromorphic computing at low temperature: Building blocks for biologically inspired microelectronic neurons like electrically driven insulator–metal transitions (IMTs), negative differential resistance, and self-oscillations have been shown up to 230 K for SmNiO 3 and NdNiO 3 . EuNiO 3 raises the IMT far above room temperature (460 K) but high-quality thin films are challenging to synthesize. Here, we explore the epitaxial stabilization of EuNiO 3 using pulsed laser deposition. X-ray diffraction reciprocal space maps, x-ray absorption spectroscopy, and transmission electron microscopy show that higher growth temperature (800 °C) reduces oxygen vacancy concentrations in EuNiO 3 . Pseudomorphic EuNiO 3 is demonstrated on both SrLaAlO 4 and NdGaO 3 substrates, and LaNiO 3 buffer layers are incorporated to facilitate future vertical device fabrication. In contrast to bulk thermodynamic predictions, the greater oxidation and crystallinity at higher temperature we observe indicates that epitaxial substrates can stabilize EuNiO 3 at O 2 pressures less than 1 atm.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2023

Vertical β -Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer

In this work, we demonstrate the high performance of β-Ga2O3 metal–insulator–semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on the Ga2O3 substrate by pulsed laser deposition. X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy confirm the existence of a 2.8 nm BN interlayer. Remarkably, with the insertion of the ultrathin BN layer, the breakdown voltage is improved from 732 V for Ga2O3 Schottky barrier diodes to 1035 V for Ga2O3 MIS diodes owing to the passivated surface-related defects and reduced reverse leakage currents. Our approach shows a promising way to improve the breakdown performance of Ga2O3-based devices for next-generation high-power electronics.

Physics↗
DOE OSTI2021

Measuring a Low Horizontal Hydraulic Gradient in a High Transmissivity Aquifer

Abstract High transmissivity aquifers typically have low hydraulic gradients (i.e., a flat water table). Measuring low gradients using water levels can be problematic because measurement error may be greater than the true difference in water levels (i.e., a low signal‐to‐noise ratio). In this study, the feasibility of measuring a hydraulic gradient in the range of 10 −6 to 10 −5 m/m was demonstrated. The study was performed at a site where the depth to water from land surface ranged from 40.1 to 94.2 m and the aquifer transmissivity was estimated at 41,300 m 2 /d (hydraulic conductivity of 18,800 m/d). The goals of the study were to reduce measurement error as much as practicable and assess the importance of factors affecting water level measurement accuracy. Well verticality was the largest source of error (0.000 to 0.168 m; median of 0.014 m), and geodetic survey of casing elevations was the next most important source of error (0.002 to 0.013 m; median of 0.005 m). Variability due to barometric pressure fluctuations was not an important factor at the site. Hydraulic heads were measured to an accuracy of ±0.0065 m, and the average hydraulic gradient was estimated to be 8.0 × 10 −6 (±0.9 × 10 −6 ) m/m. The improvement in accuracy allowed for two reversals in the groundwater flow direction to be identified, after which the gradient averaged 2.5 × 10 −5 (±0.4 × 10 −5 ) m/m. This study showed it is possible to sufficiently control sources of error to measure hydraulic gradients in the 10 −6 to 10 −5 m/m range.

McDonald, John P.↗
DOE OSTI2023

Light detection with power and signal transmission over fiber

The Deep Underground Neutrino Experiment is a next generation long baseline (1300 km) neutrino oscillation experiment. The neutrino beam measurements will be performed by a near detector and far detector. The far detector will consist of four modules, installed 1.5 km deep underground, based on Liquid Argon Time Projection Chamber (LArTPC) technology to detect particles. The Vertical Drift (VD) LArTPC is a recent technology proposed by the DUNE collaboration for the second FD module. In VD, light collection will be optimized by embedding photon detectors within the LArTPC cathode, which is biased at −300 kV. As a result, power must arrive to the Photon Detection System and signal must be transmitted via non-conductive material. The proposed solution is to use Power-over-Fiber and Signal-over-Fiber. An intense validation of the system is being performed by the collaboration at the CERN Neutrino Platform. The design of the system and the results of the validation collected over the first half of 2022 are presented here.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Surface Passivation by Excess Sulfur for Controlled Synthesis of Large, Thin SnS Flakes

Tin sulfide (SnS) is part of the group IV chalcogenides (SnX, GeX; X: S, Se), a family of anisotropic layered materials considered for thin film photovoltaics, optoelectronics, and valleytronics, and predicted narrow bandgap multiferroic materials. Large ultrathin SnS flakes, suitable for a variety of applications, are challenging to synthesize because of the enhanced surface reactivity due to the open layer structure of SnS which gives rise to a competition between lateral and vertical growth. Here we investigate the effects of added sulfur on passivating the surface and modifying the balance between lateral expansion and thickening of SnS flakes in chemical vapor transport from a SnS precursor. In addition, we investigate the growth of SnS flakes and compare the results of synthesis from a pure SnS precursor with growth, in which a slight excess of sulfur is supplied in different ways. Our results demonstrate that small amounts of excess sulfur can profoundly affect the size and thickness distributions of SnS flakes. The largest and thinnest flakes are obtained if (i) traces of sulfur are added and (ii) the sulfur source consists either of small Sx fragments released at high temperatures from the reactor walls, or atomic S supplied by sublimation from SnS 2 . The likely mechanism for the observed growth modifications is a transient surface passivation of SnS flakes during growth, which reduces the reactivity of the top facet of the flakes, limits vertical growth, and thus gives rise to ensembles with increased lateral size and reduced thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Gouge formation and dilation impacts to flow during fracture shearing

We report flow in fractures is of critical importance to fluid flow in low-permeability shales, particularly when they restrict vertical migration from reservoirs. The Mt. Simon Sandstone is a target for geologic CO 2 sequestration and the overlying Eau Claire Formation is the sealing formation capping this reservoir. The lower Eau Claire, a primary barrier to upward migration of CO 2 from the Mt. Simon, is lithologically heterogenous with a mixture of sandstone and shale. We use a series of flow-through experiments on fractured samples from the Eau Claire to document the morphological changes taking place in the fracture and surrounding rock as it is sheared in a stepwise fashion. The samples were imaged using computed tomography after each shearing episode and flow resistance was calculated based on the pressure differential across each core. We found that gouge accumulations in the fracture plane led to specific instances of self-sealing behavior despite the fact that most samples increased in average fracture aperture and transmissivity. Gouge limited the increase or, in some cases, decreased flow through these samples. Fractures adjacent to shale-rich zones and concordant with bedding were more likely to show evidence of self-sealing, while increased sandstone content and fracture orientation perpendicular to bedding planes was more likely to result in fracture dilation and fracture permeability increases. Reactivation and shearing of vertical fractures in lithologically heterogenous caprocks is more likely to pose risks to long term CO 2 storage scenarios.

58 GEOSCIENCES↗
DOE OSTI2021

The R-matrix bootstrap for the 2d O( N ) bosonic model with a boundary

The S-matrix bootstrap is extended to a 1+1d theory with O(N) symmetry and a boundary in what we call the R-matrix bootstrap since the quantity of interest is the reflection matrix (R-matrix). Given a bulk S-matrix, the space of allowed R-matrices is an infinite dimensional convex space from which we plot a two dimensional section given by a convex domain on a 2d plane. In certain cases, at the boundary of the domain, we find vertices corresponding to integrable R-matrices with no free parameters. In other cases, when there is a one-parameter family of integrable R-matrices, the whole boundary represents integrable theories. We also consider R-matrices which are analytic in an extended region beyond the physical cuts, thus forbidding poles (resonances) in that region. In certain models, this drastically reduces the allowed space of R-matrices leading to new vertices that again correspond to integrable theories. We also work out the dual problem, in particular in the case of extended analyticity, the dual function has cuts on the physical line whenever unitarity is saturated. For the periodic Yang-Baxter solution that has zero transmission, we computed the R-matrix initially using the bootstrap and then derived its previously unknown analytic form.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Overview of Potential Hazards in Electric Aircraft Charging Infrastructure

With increasing efforts in electrification of Advanced Air Mobility and electric aircraft, there is a growing need to install new infrastructure to support them. This report highlights potential hazards (non exhaustive) that the installation must be aware of and be prepared to mitigate with increased electrical equipment on site. The hazards can be due to natural causes as well as non natural causes. The report aims to provide starting guidelines for awareness of these hazards and to help plan for mitigation of the same.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Disaggregating Future Retail Electricity Rate Growth [Slides]

Recent Berkeley Lab research found that modest retail rate increases over the past 10 years were mostly driven by large increases in capital expenditures (CapEx) that were offset in part by substantial wholesale price reductions. Decision-makers are increasingly concerned about the potential future rate impacts of a number of policies and industry trends that support rapid decarbonization, electrification, and grid modernization. Using historical FERC Form 1 data and the existing literature on policies and industry trends that are likely to affect utility-incurred costs and retail sales, Berkeley Lab researchers developed ranges of forecasted growth rates for cost-related rate drivers (i.e., fuel and purchased power; transmission, distribution, generation, and other categories of both non-fuel operations & maintenance and CapEx) and non-cost related rate drivers (i.e., retail sales, peak demand, and customers). These were then used as inputs to a pro-forma utility financial model (FINDER) that estimated the growth in retail electric rates between 2020 and 2030 for a prototypical vertically-integrated investor-owned utility in the United States. The analysis produced the following results: 1. Assuming average growth rates in all rate drivers, future retail rate growth is driven by sizable increases in all CapEx costs, where fuel and purchased power costs are replaced by generation CapEx as the largest rate component between 2020 and 2030. 2. Growth in sales/peak demand/customers, generation CapEx costs, and fuel and purchased power (FPP) costs, in isolation, produce the most uncertainty in rate growth. Specifically, a 1% increase in the compound annual growth rate (CAGR) of retail sales, coincident peak demand (CP), and customers (Sales-CP-Cust) results in a 0.88-0.93% decrease in the CAGR of rates, in isolation. However, a 1% increase in the CAGR of generation CapEx budgets results in a 0.07-0.14% increase in the CAGR of rates, while a 1% increase in the CAGR of FPP costs causes a 0.10-0.14% increase in the CAGR of rates, all else being equal. 3. Taking into account the correlation and variability of the growth in all rate drivers jointly, generation CapEx is expected to be both the largest and most uncertain rate component by 2030 (20-25% share of the retail rate). Transmission and distribution CapEx, along with fuel and purchased power costs are each expected to comprise between 12% and 17% of retail rates.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2022

3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells

InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core–shell geometry in principle allows for a greater tuning of composition and emission, especially farther into the infrared, the practical limits of elastic strain accommodation in quantum wells on multifaceted nanowires have not been established. One barrier to progress is the difficulty of directly comparing the emission characteristics and the precise microstructure of a single nanowire. Here, in this study, we report an approach to correlating quantum well morphology, strain, defects, and emission to understand the limits of elastic strain accommodation in nanowire quantum wells specific to their geometry. We realize full 3D Bragg coherent diffraction imaging (BCDI) of intact quantum wells on vertically oriented epitaxial nanowires, which enables direct correlation with single-nanowire photoluminescence. By growing In 0.2 Ga 0.8 As quantum wells of distinct thicknesses on different facets of the same nanowire, we identified the critical thickness at which defects are nucleated. A correlation with a traditional transmission electron microscopy analysis confirms that BCDI can image the extended structure of defects. Finite element simulations of electron and hole states explain the emission characteristics arising from strained and partially relaxed regions. This approach, imaging the 3D strain and microstructure of intact nanowire core–shell structures with application-relevant dimensions, can aid the development of predictive models that enable the design of new compact infrared emitters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures

Epitaxial GaP/Si heterostructures grown by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) have been studied, primarily using aberration-corrected scanning transmission electron microscopy (AC-STEM). Atomically-resolved structure images, which are sensitive to atomic-column intensity revealed the detailed geometry of antiphase boundaries that were both parallel and also inclined to the growth direction. The polar/non-polar GaP/Si interfaces were neither atomically flat laterally nor abrupt vertically. Measurements of intensity profiles using both bright-field and dark-field AC-STEM images, as well as chemically-sensitive g 002 dark-field imaging, indicated substantial interfacial intermixing, which increased significantly from ~1.3 nm (MEE growth at 440 °C) to ~2.1 nm (MBE growth at 600 °C). The finite interface width will impact theoretical predictions of charge imbalance and strong electric fields across the heterointerface.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Estimation of Respirable Aerosol Release Fractions through Stress Corrosion Crack-Like Geometries

The formation of a stress corrosion crack (SCC) in the canister wall of a dry cask storage system (DCSS) has been identified as a potential issue for the long-term storage of spent nuclear fuel. The presence of an SCC in a storage system could represent a through-wall flow path from the canister interior to the environment. Modern, vertical DCSSs are of particular interest due to the significant backfill pressurization of the canister, up to approximately 800 kPa. This pressure differential offers a relatively high driving potential for blowdown of any particulates that might be present in the canister. In this study, the carrier gas flow rates and aerosol transmission properties were evaluated for an engineered microchannel with characteristic dimensions similar to those of an SCC. The microchannel was formed by mating two gage blocks with a slot orifice measuring 28.9 μm (0.0011 in.) tall by 12.7 mm (0.500 in.) wide by 8.86 mm (0.349 in.) long (flow length). Surrogate aerosols of cerium oxide, Ce0 2 , were seeded and mixed inside a pressurized tank. The aerosol characteristics were measured immediately upstream and downstream of the simulated SCC at elevated and ambient pressures, respectively. These data sets are intended to demonstrate a new capability to characterize SCCs under well-controlled boundary conditions. Separate modeling efforts are also underway that will be validated using these data. The test apparatus and procedures developed in this study can be easily modified for the evaluation of more complex SCC-like geometries including laboratory-grown SCC samples.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2025

Status of the development and testing of in-vessel and ECH-protection components for the ITER low-field side reflectometer

The ITER Low-Field Side Reflectometer (LFSR) is a critical diagnostic system designed to measure edge electron density profiles, fluctuations, and plasma rotation in ITER. This paper presents the latest developments in the design, testing, and validation of key in-vessel and Electron Cyclotron Heating (ECH) protection components. The LFSR antenna array has been optimized to provide robust coverage over expected plasma vertical displacements and a Doppler measurement for plasma rotation. Further, a comprehensive assessment of a 170-GHz diffraction grating and a novel stray-ECH power monitor demonstrates effectiveness in mitigating the impact of stray ECH power on sensitive microwave electronics. Additionally, an advancement in anti-reflective technology for millimeter waves significantly improves transmission of LFSR's vacuum window while meeting ITER's stringent safety and operational requirements. These results support the continued integration of LFSR into ITER, ensuring its diagnostic capabilities remain resilient under reactor-relevant conditions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, in this study, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal–metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m 2 ·K. Additionally, Raman maps of GaN near the GaN–diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.

Raman↗
DOE OSTI2024

Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures

Emergent phenomena in traditional ferroelectrics are frequently observed at heterointerfaces. Accessing such functionalities in van der Waals ferroelectrics requires the formation of layered heterostructures, either vertically stacked (similar to oxide ferroelectrics) or laterally stitched (without equivalent in 3D-crystals). Here, we investigate lateral heterostructures of the ferroelectric van der Waals semiconductors SnSe and SnS. A two-step process produces ultrathin crystals comprising an SnSe core laterally joined to an SnS edge-band, as confirmed by Raman spectroscopy, transmission electron microscopy (TEM) imaging, and electron diffraction. TEM shows a moiré pattern across the SnSe core due to coverage by an ultrathin SnS layer. The ability of the lateral interface (IF) to direct excited carriers, probed by cathodoluminescence, shows electron transfer over 560 nm diffusion length from the SnS edge-band. Large, thin flakes supporting ferroelectricity allow investigating domains and domain wall interactions in uniform crystals and lateral heterostructures. Polarized optical microscopy of sub-20 nm flakes consistently shows ⟨110⟩ oriented stripe domains with mirror-twin domain walls. Heterostructures adopt two domain configurations, with domains either constrained to the SnSe core or propagating across the entire SnSe–SnS flakes. Furthermore, the combined results demonstrate multifunctional van der Waals heterostructures with high-quality IFs presenting extraordinary opportunities for manipulating carrier flows and ferroelectric domain patterns.

2D ferroelectrics↗