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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 73 records · Page 4
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in Co3Sn2S2

Abstract Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co 3 Sn 2 S 2 , we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co 3 Sn 2 S 2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co 3 Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co 3 Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Relative molecular orientation can impact the onset of plasticity in molecular crystals

Abstract Creating or moving dislocations is the first step to dissipating mechanical energy via plastic deformation under contact loading. In molecular crystals there is both a lattice that defines crystal orientation and a relative orientation of the basis of the molecules. We define a normalization parameter which relates strain at yield, the hardness of the bulk crystal, and a distance parameter analogous to a Burgers vector that nominally predicts the relative ease of initiating plasticity in this broad class of materials. Analyzing the yield behavior of 10 different molecular crystals of varying space groups shows the inter-molecular orientation predicts the experimentally observed applied stress needed to nucleate dislocations. When molecules are oriented ‘parallel’ relative to one another the normalized maximum shear stress at the onset of plasticity is on the order of 3–5 times lower than when molecules within the crystal are ‘anti-parallel’, and molecules with a more equiaxed shape fall in between these bounds. This provides an initial indication of a structural feature which predicts the relative ease of initiating plasticity during contact loading in molecular crystals.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Universal corrections to the superfluid gap in a cold Fermi gas

A framework for computing the superfluid gap in an effective field theory (EFT) of fermions interacting via momentum-independent contact forces is developed. The leading universal corrections in the EFT are one-loop in-medium effects at the Fermi surface, and reproduce the well-known Gor'kov-Melik-Barkhudarov result. Here, the complete subleading universal corrections are presented here, and include one-loop effects away from the Fermi surface, two-loop in-medium effects, as well as modifications to the fermion propagator. Together, these effects are found to reduce the gap at low densities. Applications to neutron superfluidity in neutron stars are also discussed.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Stable immobilized amine sorbents for removal of an organic contaminate from wastewater

The present disclosure relates to a method for the removal of organic contaminates from wastewater. The method comprises contacting wastewater comprising water and an organic contaminate with a basic immobilized amine sorbent, where the basic immobilized amine sorbent comprises a polyamine bound to an inorganic support via a linker, such that contacting the wastewater causes at a least a portion of the organic contaminate to bind to the basic immobilized amine sorbent.

Gray, McMahan L.↗
DOE OSTI2023

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such as the contact resistance, on/off ratio and mobility are often limited by the presence of interfacial residues caused by transfer procedures. Here, we show an ideal residue-free transfer approach using polypropylene carbonate with a negligible residue coverage of ~0.08% for monolayer MoS 2 at the centimetre scale. By incorporating a bismuth semimetal contact with an atomically clean monolayer MoS 2 field-effect transistor on hexagonal boron nitride substrate, we obtain an ultralow Ohmic contact resistance of ~78 Ω µm, approaching the quantum limit, and a record-high on/off ratio of ~10 11 at 15 K. Further, such an ultra-clean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting transition metal dichalcogenides.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Sintering inhibition enables hierarchical porosity with extreme resistance to degradation during redox cycling of Fe-Mo foams

High-temperature (800 ºC) steam-hydrogen redox cycling, relevant to grid-scale energy storage, is studied for iron-based freeze-cast lamellar foams. In contrast to previously studied Fe, Fe-Ni, and Fe-Co foams that rapidly degrade, Fe-25Mo foams feature a much-enhanced structural damage resistance. Utilizing in-situ x-ray diffraction, microscopy, and x-ray tomography, strong sintering inhibition is observed in Fe-Mo foams, creating a hierarchically porous lamellar structure. This leads to (i) wide channels between lamellae, enabling high macroscopic porosity (~78%) which can accommodate gas flow as well as volumetric expansion without lamellar contact, and (ii) microporosity within lamellae, providing additional free volume to accommodate expansion during oxidation, limiting both swelling of the lamellae and the formation of Kirkendall pores. Finally, these combined effects enable a near-complete reversibility of the microstructure during cycling, preventing damage produced via internal lamellar buckling, cracking, contacting and sintering, with a remarkably high porosity (65%) remaining after 50 consecutive redox cycles.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Bio-Inspired Energy-Efficient Nanofabricated Electrical Contacts

Nanoscale electrical contacts, especially those between materials of dissimilar electronic properties, often represent one of the main causes of drops in energy transfer efficiency. They are also among the sources of above-threshold noise, and their performance often decreases over the lifetime of the nanodevices. Scale-down limitations from mesoscopic to nanoscale devices, and likewise, of nanoscale to quantum-scale devices are also impeded by contacts’ quality. Making more reliable, energy-efficient electrical contacts is among the goals of the nanoelectronics research within the framework of energy-efficient electronic systems. This report focuses on the design, nanofabrication, and testing of novel shapes of electrical contacts. Lithography and nanofabrication were utilized to mimic the approximate shape of insect setae for mesoscale contacts design. The contacts are tested for elementary charge transport via I–V curves and for the broadband, 1/f noise. Tests show that contacts design leads to a measurable decrease in the energy necessary to operate a contact as a switch by at least 12–20%, depending on temperature, while broadband noise shows measurably lower power spectra, for bio-inspired contacts. The proposed method is open to modifications and improvements as required by various on-chip applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗
DOE OSTI2023

Feedback lock-in: A versatile multi-terminal measurement system for electrical transport devices

Here, we present the design and implementation of a measurement system that enables parallel drive and detection of small currents and voltages at numerous electrical contacts to a multi-terminal electrical device. This system, which we term a feedback lock-in, combines digital control-loop feedback with software-defined lock-in measurements to dynamically source currents and measure small, pre-amplified potentials. The effective input impedance of each current/voltage probe can be set via software, permitting any given contact to behave as an open-circuit voltage lead or as a virtually grounded current source/sink. This enables programmatic switching of measurement configurations and permits measurement of currents at multiple drain contacts without the use of current preamplifiers. Our 32-channel implementation relies on commercially available digital input/output boards, home-built voltage preamplifiers, and custom open-source software. With our feedback lock-in, we demonstrate differential measurement sensitivity comparable to a widely used commercially available lock-in amplifier and perform efficient multi-terminal electrical transport measurements on twisted bilayer graphene and SrTiO 3 quantum point contacts. The feedback lock-in also enables a new style of measurement using multiple current probes, which we demonstrate on a ballistic graphene device.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Uncovering a membrane-distal conformation of KRAS available to recruit RAF to the plasma membrane

The small GTPase KRAS is localized at the plasma membrane where it functions as a molecular switch, coupling extracellular growth factor stimulation to intracellular signaling networks. In this process, KRAS recruits effectors, such as RAF kinase, to the plasma membrane where they are activated by a series of complex molecular steps. Defining the membrane-bound state of KRAS is fundamental to understanding the activation of RAF kinase and in evaluating novel therapeutic opportunities for the inhibition of oncogenic KRAS-mediated signaling. We combined multiple biophysical measurements and computational methodologies to generate a consensus model for authentically processed, membrane-anchored KRAS. In contrast to the two membrane-proximal conformations previously reported, we identify a third significantly populated state using a combination of neutron reflectivity, fast photochemical oxidation of proteins (FPOP), and NMR. In this highly populated state, which we refer to as “membrane-distal” and estimate to comprise ~90% of the ensemble, the G-domain does not directly contact the membrane but is tethered via its C-terminal hypervariable region and carboxymethylated farnesyl moiety, as shown by FPOP. Subsequent interaction of the RAF1 RAS binding domain with KRAS does not significantly change G-domain configurations on the membrane but affects their relative populations. Overall, our results are consistent with a directional fly-casting mechanism for KRAS, in which the membrane-distal state of the G-domain can effectively recruit RAF kinase from the cytoplasm for activation at the membrane.

KRAS↗
DOE OSTI2021

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO 3 . Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The response of sub-surface domains is studied by FIB cross-sectioning, enabling imaging in the direction perpendicular to the applied electric field. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Shock and contact interaction with a simple cubic array of particles

Shock-particle interaction is a fundamental pillar of multiphase compressible flows that has been studied at length for many decades. However, little attention has been paid to the interaction of particles with a contact interface that follows a shock in shock tube experiments and applications relating to blast waves. Presently, the phenomenon is studied at the microscale via particle resolved simulations of shock contact systems interacting with a structured array of particles as well as isolated particles. Simulations are conducted at particle volume fractions of 0%, 5%, 10%, 20%, and 40% at three contact Mach numbers. Additionally, the diaphragm position is varied, which controls the timing of the shock arrival time in relation to the contact arrival time. The modification to the drag on these stationary particles by the contact is analyzed and compared to the compressible Maxey–Riley–Gatignol model, which is adequate for the single particle cases but does not account for fluid mediated particle–particle interactions.

Mechanics↗
DOE OSTI2021

Exploding foil initiator

An exploding foil initiator assembly is provided comprising a first layer of dielectric material, a second layer of dielectric material, a third layer of dielectric material, and a flyer. The first layer of dielectric material comprises a first pair of vias. The second layer of dielectric material comprises a first surface adjacent to the first layer of dielectric material, a second surface opposed to the first surface, a second pair of vias, and a bridge. Each of the second pair of vias extends from the first surface to the second surface and is in contact with one of the first pair of vias. The bridge is positioned on the second surface and is electrically connected to the second pair of vias. The third layer of dielectric material is positioned on the second surface of the second layer and comprises a bore positioned at least partially over the bridge forming a barrel. The flyer is positioned in the barrel on the bridge.

Krueger, Daniel Scott↗
DOE OSTI2022

Development of Numerical Model of Metal Foam with PCM for the Estimation of Effective Thermal Conductivity

Global warming due to climate change is a threat to humankind. Nuclear energy is one of the promising solutions to reduce fossil fuel usage. Nuclear energy can handle the base load, compensating for the volatility of renewable energy. If nuclear energy could achieve load following capability, the combination with renewable energy would be more suitable. Thermal energy storage (TES) is one of the options for enabling load following of nuclear reactors. The TES makes it possible to store surplus nuclear thermal energy and release it later as needed. In Idaho National Laboratory (INL), a new concept of latent heat TES integrated with high-temperature heat pipe has been proposed and is under development, which is called Heat pipe-Integrated Thermal Battery (HITB). HITB exchanges thermal energy between the reactor system and TES via heat pipe. The heat transferred to TES medium, made of phase change material (PCM), stores energy as sensible heat and/or latent heat. As PCM typically has poor thermal conductivity, however, various heat transfer enhancement techniques are required to achieve a rapid charging cycle. There are many techniques to enhance the heat transfer ability of TES medium such as disk, fin, and metal foam. Among them, metal foam is an appropriate option to enhance the heat transfer because it maximizes the heat transfer area through metal wicks. Metal foam is a lightweight metal structure that has a high porosity of over 0.9. The typical materials for metal foam are Aluminum, Copper, Nickel, and Silicon Carbide (SiC). Metal foam not only enhances heat transfer via conduction but also increases contact surface area. In the HITB design , the metal foam is being considered as one of the options to enhance the heat transfer of TES medium (PCM) [1]. To predict the enhanced thermal performance of TES, one should properly estimate the effective thermal conductivity of metal foam combined with PCM material or calculate heat transfer in distributed model. There are many experimental works that provides effective thermal conductivity of metal foam with various PCM [2,3]. Also, many theoretical models were developed based on the unit cell model of metal foam [4,5]. With a distributed model, on the other hand, detail heat transfer characteristics between metal foam and PCM material can be analyzed considering the geometry or buoyancy effect. However, due to the complex geometry of metal foam pores, the computational cost for three-dimensional modeling highly increases. Therefore, if metal foam structure can be modeled in simple and repetitive design, the computational cost would decrease Among the various metal foam models [2], lattice model is one of the simple and extendable design. The porosity and pores per inch (PPI) can be characterized by the size and spatial distance of lattice structure. If the three-dimensional metal foam model consists of lattice structure could properly estimate the heat transfer, which is characterized by effective thermal conductivity, it would be a good option to assess the thermal performance of metal foam with PCM. In this study, a three-dimensional numerical model was developed to simulate conductive heat transfer between metal foam and PCM. The three-dimensional lattice structure of square pillars was selected as a basic structure of the metal foam. The calculation result was characterized by the effective thermal conductivity of the whole domain. A sensitivity study was conducted for mesh size, domain size, and PPI to check whether the calculation result gives a converged result or not. Lastly, the effective thermal conductivity from the lattice model was compared with existing experimental data to validate the model result

25 ENERGY STORAGE↗
DOE OSTI2022

Controlling Pinhole Radius and Areal Density in a-Si/SiOx Using Metal-Assisted Chemical Etching

Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes are currently prepared via a>1000 degrees C thermal step to induce oxide break-up. Herein, we develop the precursor of a pinhole-enabled poly-Si/SiOx contact utilizing room temperature metal-assisted chemical etching (MACE) to form pinholes in the SiOx. The pinholes were created via electroless Ag nanoparticle (Ag NP) deposition followed by the MACE of intrinsic amorphous hydrogenated silicon (a-Si:H) on SiOx, creating isolated mesopores through the film stack. By varying the MACE etching solution (HF:H2O2) concentration, we were able to vary the pinhole areal density over four orders of magnitude (104-107 cm-2). We observed the Ostwald ripening of the Ag NP to enable control over the pinhole radii. Our work demonstrates proof-of-concept for a-Si:H/SiOx with mesopores across the film stack, which may serve as precursor for the development of poly-Si/SiOx passivating contacts of both polarities.

MATERIALS SCIENCE,SOLAR ENERGY↗
DOE OSTI2024

Characterization of Mn 5 Ge 3 Contacts on a Shallow Ge/SiGe Heterostructure

Mn 5 Ge 3 is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn 5 Ge 3 -based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of Mn 5 Ge 3 -based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct Mn 5 Ge 3 -based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that Mn 5 Ge 3 -based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of 0.10 eV (extracted from a Mn 5 Ge 3 /n-Ge analogue) and a contact resistance in the order of 1 kΩ. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Group transfer polymerization for the production of functional monomers

The present invention provides efficient processes for preparing brush polymers. In general, the process comprises three distinct reaction steps utilizing two separate catalysts. In the first step, the initiating compound comprising norbornene is contacted with a silane in the presence of a catalyst, thereby forming a silated intermediate. This silated intermediate is then contacted with a monomer in the presence of a catalyst via Group Transfer Polymerization (GTP). The resulting compound from GTP is contacted with a ring opening metathesis polymerization (ROMP) catalyst to prepare the brush polymer. Surprisingly, the brush polymers obtained from the above process are accessed in an efficient and rapid GTP methodology as compared to prior methods.

Miyake, Garret↗
DOE OSTI2025

Self‐Assembled Monolayer Templating for Engineered Nanopinholes in Passivated Contact Solar Cells

We present a novel self-assembled monolayer (SAM)-based technique to make nanopinhole-enabled passivated contacts on silicon solar cells by tuning the SAM coverage area and etch selectivity. We deposit trimethyl-silyl Si(CH 3 ) 3 groups using hexamethyldisilazane (HMDS) as the precursor over passivating dielectric layers and their stacks (SiO 2 , SiN x , SiO 2 /SiN x ) and interrupt the HMDS attachment chemistry shortly before a full monolayer is formed on its surface. Subsequent etching in dilute HF produces pinholes through the dielectric layers due to the higher etch resistance of the SAM to HF etching. The pinhole areal density (10 4 –10 8 /cm 2 ) and size (10–1000 nm) can be tuned both by duration of HMDS attachment and HF etch time. Pinholes were characterized by atomic force microscopy, tetramethylammonium hydroxide (TMAH) selective etch, and Ag decoration by electroless plating. Polysilicon (poly-Si) passivated contacts enabled by pinholes were formed by subsequent deposition of doped amorphous silicon (a-Si:H) followed by thermal crystallization and dopant drive-in. At optimal areal pinhole density ≈10 7 /cm 2 , contacts exhibit both passivation and carrier transport via pinholes as evidenced by electron beam induced current, transmission line measurements, and carrier lifetime measurements. Solar cells based with these pinhole contacts show V oc = 723 mV and FF = 80.3%. The remaining SAM layer does not affect device performance.

14 SOLAR ENERGY↗