Search NASA⌕ Search

SEARCH · Search NASA

Results for “ION IMPLANTATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 721 records · Page 40
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Control and Service Life Extension of Accelerator's Anode Voltage Regulator

Accelerator's beam quality is highly affected by the anode voltage's stability. The accelerator examined in this study is an ion implantation accelerator which anode voltage is regulated by an electromechanical system shown in Fig 1. The system works by stepping down the input grid voltage to generate a high anode voltage of up to 2.5 kV through a motor generator. It was desired that the system be able to correct for disturbances and instabilities in the input voltage swiftly while minimizing overshoots and steady state errors. Moreover, it should maintain such capability satisfactorily despite of degradations. It was predicted that this adaptive capability would be limited to a certain extent where if degradations become too severe, system's performance would deteriorate considerably such that maintenance actions or component replacements are required. The mechanism to control anode voltage, estimate and extend the system's Remaining Useful Life (RUL) in an integrated manner is explored in this paper. (authors)

43 PARTICLE ACCELERATORS↗
DOE OSTI2018

Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation

A method for developing models of semiconductor devices with two-dimensional nonuniform concentration profiles of donors and acceptors in working regions of a semiconductor device structure is for the first time proposed based on a complex of physical-topological modeling of charge carrier transport and process simulation of the forming processes of the device structure. The application of process simulation is due to the need to correctly define the parameters of the semiconductor device structure, which are used as initial data to calculate the electron transport according to the physical-topological model. The parameters of production processes of ion implantation, diffusion, and lithography, which were refined during process simulation, are determined for a high-power metal—oxide—semiconductor (MOS) transistor forming by the double diffusion method in accordance with known electrical characteristics and measured geometrical sizes of the structure. This results in two-dimensional distribution profiles of donors and acceptors in p–n junctions necessary to calculate the transistor breakdown under the effect of pulsed γ radiation. Breakdown processes are modeled with the help of the physical-topological model based on the Poisson and continuity equations as well as expressions for the diffusion and drift current densities in the transistor. Accounting for carriers formed at the instant of γ irradiation is implemented by the introduction of the dependence of the generation coefficient of electron–hole pairs on the radiation-dose power. The results of calculations correlate well with the experimental data, which makes it possible to give a conclusion regarding the adequacy of the proposed complex model.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Thermal diffusion boron doping of single-crystal natural diamond

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon

Single-crystal silicon was hyperdoped with sulfur, selenium, and tellurium using ion implantation and nanosecond laser melting. The hyperdoping of such chalcogen elements led to strong and wide sub-bandgap light absorption. Annealing the hyperdoped silicon, even at low temperatures (such as 200–400 °C), led to attenuation of the sub-bandgap absorption. To explain the attenuation process, we modeled it as chemical decomposition reaction from an optically absorbing structure to a non-absorbing structure. Attenuation of the experimental absorption coefficient was fit using the Arrhenius equation. From the fitted data, we extracted the reaction activation energies of S-, Se-, and T-hyperdoped silicon as 0.338 ± 0.029 eV, 0.471 ± 0.040 eV, and 0.357 ± 0.028 eV, respectively. We discuss these activation energies in terms of the bond energies of chalcogen–Si metastable bonds, and suggest that several high-energy interstitial sites, rather than substitutional sites, are candidates for the atomic structures that are responsible for the strong sub-bandgap absorption of chalcogen hyperdoped silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2016

VLT/SINFONI OBSERVATIONS OF EUROPA: NEW INSIGHTS INTO THE SURFACE COMPOSITION

We present new insights into Europa’s surface composition on the global scale from linear spectral modeling of a high spectral resolution data set acquired during a ground-based observation campaign using SINFONI{sup 4}, an adaptive optics near-infrared instrument on the Very Large Telescope (ESO). The spectral modeling confirms the typical “bullseye” distribution of sulfuric acid hydrate on the trailing hemisphere, which is consistent with Iogenic sulfur ion implantation. However, the traditional hypothesis of the presence of sulfate salts on the surface of the satellite is challenged as Mg-bearing chlorinated species (chloride, chlorate, and perchlorate) are found to provide improved spectral fits. The derived global distribution of Mg-chlorinated salts (and particularly chloride) is correlated with large-scale geomorphologic units such as chaos and darker areas, thus suggesting an endogenous origin. Based on the 1.65 μ m water-ice absorption band shape and position, the surface temperature is estimated to be in the range 110–130 K, and water ice is found to be predominantly in its crystalline state rather than amorphous. While amorphous water ice exhibits a strong correlation with the expected intensity of the Ionian plasma torus bombardment, crystalline water ice is instead more associated with distinct geomorphological units. Endogenous processes such as jets and ice heating due to active geology may explain this relationship. Otherwise, no evidence of a correlation between grain size for the water ice and the sputtering rate has been detected so far.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2013

Deactivation of metastable single-crystal silicon hyperdoped with sulfur

Silicon supersaturated with sulfur by ion implantation and pulsed laser melting exhibits broadband optical absorption of photons with energies less than silicon's band gap. However, this metastable, hyperdoped material loses its ability to absorb sub-band gap light after subsequent thermal treatment. We explore this deactivation process through optical absorption and electronic transport measurements of sulfur-hyperdoped silicon subject to anneals at a range of durations and temperatures. The deactivation process is well described by the Johnson-Mehl-Avrami-Kolmogorov framework for the diffusion-mediated transformation of a metastable supersaturated solid solution, and we find that this transformation is characterized by an apparent activation energy of E{sub A}=1.7 ± 0.1 eV. Using this activation energy, the evolution of the optical and electronic properties for all anneal duration-temperature combinations collapse onto distinct curves as a function of the extent of reaction. We provide a mechanistic interpretation of this deactivation based on short-range thermally activated atomic movements of the dopants to form sulfur complexes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

The performance of passivated emitter and rear (PERC) solar cells made of p-type Si wafers is often limited by recombination in the phosphorus-doped emitter. To overcome this limitation, a realistic PERC solar cell is simulated, whereby the conventional phosphorus-doped emitter is replaced by a thin, crystalline gallium phosphide (GaP) layer. The resulting GaP/Si PERC cell is compared to Si PERC cells, which have (i) a standard POCl{sub 3} diffused emitter, (ii) a solid-state diffused emitter, or (iii) a high efficiency ion-implanted emitter. The maximum efficiencies for these realistic PERC cells are between 20.5% and 21.2% for the phosphorus-doped emitters (i)–(iii), and up to 21.6% for the GaP emitter. The major advantage of this GaP hetero-emitter is a significantly reduced recombination loss, resulting in a higher V{sub oc}. This is so because the high valence band offset between GaP and Si acts as a nearly ideal minority carrier blocker. This effect is comparable to amorphous Si. However, the GaP layer can be contacted with metal fingers like crystalline Si, so no conductive oxide is necessary. Compared to the conventional PERC structure, the GaP/Si PERC cell requires a lower Si base doping density, which reduces the impact of the boron-oxygen complexes. Despite the lower base doping, fewer rear local contacts are necessary. This is so because the GaP emitter shows reduced recombination, leading to a higher minority electron density in the base and, in turn, to a higher base conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Temperature dependent deformation mechanisms in pure amorphous silicon

High temperature nanoindentation has been performed on pure ion-implanted amorphous silicon (unrelaxed a-Si) and structurally relaxed a-Si to investigate the temperature dependence of mechanical deformation, including pressure-induced phase transformations. Along with the indentation load-depth curves, ex situ measurements such as Raman micro-spectroscopy and cross-sectional transmission electron microscopy analysis on the residual indents reveal the mode of deformation under the indenter. While unrelaxed a-Si deforms entirely via plastic flow up to 200 °C, a clear transition in the mode of deformation is observed in relaxed a-Si with increasing temperature. Up to 100 °C, pressure-induced phase transformation and the observation of either crystalline (r8/bc8) end phases or pressure-induced a-Si occurs in relaxed a-Si. However, with further increase of temperature, plastic flow rather than phase transformation is the dominant mode of deformation. It is believed that the elevated temperature and pressure together induce bond softening and “defect” formation in structurally relaxed a-Si, leading to the inhibition of phase transformation due to pressure-releasing plastic flow under the indenter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Shape-imposed anisotropy in antiferromagnetic complex oxide nanostructures

In this study, we report on a shape-imposed magnetic anisotropy in micro- and nanostructures defined in antiferromagnetic (AF) LaFeO3 (LFO) thin films. Two distinct types of structures are investigated: embedded magnets created via ion implantation and free-standing magnets created via ion milling. Using a combination of x-ray photoemission electron microscopy and x-ray absorption spectroscopy, we examine the impact of the structure type, AF layer thickness, and crystal geometry on the Néel vector orientation in these structures. Here, we demonstrate a distinct shape-imposed anisotropy in embedded and free-standing structures alike and show that both parallel and perpendicular alignments of the AF spin axis with respect to structure edges can be achieved by variation of the AF layer thickness and the orientation of the structure edges with respect to the LFO crystalline axes. This work demonstrates how the fabrication procedure affects the magnetic order in thin film AF nanostructures and shows how nanoscale patterning can be used to control the orientation of the Néel vector in epitaxial oxide thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1998

CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

When the main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) mm(exp 3)/N-m, respectively, carbon- and nitrogen-ion-implanted, fine-grain CVD diamond and DLC ion beam deposited on fine-grain CVD diamond met the requirements regardless of environment (vacuum, nitrogen, and air).

Miyoshi, Kazuhisa↗
DOE OSTI2020

p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during metalorganic chemical vapor deposition through sequential short-duration gyrotron microwave heating cycles at temperatures of 1200–1350 °C. GaN is implanted with 1019 cm−3 Mg ions, capped with AlN, and annealed under 3 MPa N2 overpressure in 5 s heating cycles for less than 60 s total using a high-power gyrotron microwave heating source. Through I–V characterization, photoluminescence spectroscopy, and Raman spectroscopy, we study the evolution of electrical properties, optically active point defects, and material strain in response to implantation and annealing. For Mg-implanted samples, increasing annealing temperature is characterized by an increase in the PL substitutional Mg-related peak (UVL) relative to the shallow-donor vacancy-related peak (GL2). Through comparison of implanted and in situ doped samples, it is demonstrated that the origin of compensating VN lies primarily in implantation rather than degradation from the annealing process. Transmission line measurements and diode I–V measurements show a sheet resistance of 1083 kΩ/□ and a hole concentration of 1.23 × 1015 cm−3, respectively, in the Mg-implanted material annealed at 1350 °C. We conclude that temperature-cycled gyrotron annealing at 1350 °C decreases implant-induced compensating point defects and activates Mg to obtain selective p-type conduction.

Meyers, V. (ORCID:0000000176731553)↗
DOE OSTI2019

Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Radiation protection for high energy implantation of light ions in a production environment

In recent years the irradiation of semiconductor devices by light ions with high energies has increasingly become a well-established method to adjust charge carrier lifetimes in semiconductor devices. To introduce this process into the end of frontend production environment several measures in terms of radiation safety will have to be obeyed. An overview on thresholds for particles induced gamma emission will be given, starting with the {sup 11}B(p,{gamma}){sup 12}C reaction at 163keV. The environment has to be shielded from gamma rays, therefore those implanters have to be situated in adequate enclosures. Calculations for specific implant energies are done to define the thicknesses of tool enclosures. A set of radiation detectors monitors the values at well-defined positions online and radiation values are fed into a superordinate system that is directly coupled to the main power supply of the implanter.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Defect mitigation by ion induced amorphousization and solid-phase epitaxy

Ion implantation is a common technique in the semiconductor industry used to modify the electrical properties of materials, usually silicon. Some dopant ions are sufficiently light, such as boron, that they do not create a continuous amorphous layer in silicon over the range of the ions. In the presence of such a layer, most of the ioninduced damage can be removed by solid-phase epitaxy growth (SPEG), which results in recrystallization of the amorphous damage. However, end-of-range defects at the amorphous-crystal interface give rise to threading dislocations during SPEG that degrade the quality of the recrytallized Si. We have studied the end of range defects in silicon with three different implantations. The first was with 80 keV {sup 30}Si with a dose of 3 Multiplication-Sign 10{sup 15} Si/cm{sup 2}, and the second was with 100 keV {sup 72}Ge at a dose of 1 Multiplication-Sign 10{sup 15} Ge/cm{sup 2}, and the third was a double implant of 100 keV {sup 72}Ge at a dose of 1 Multiplication-Sign 10{sup 15} Ge/cm{sup 2} followed by 340 keV {sup 28}Si at a dose of 3 Multiplication-Sign 10{sup 14} Si/cm{sup 2}. SPEG was done at 650 Degree-Sign C to recrystalize the implanted samples, and the end of range defects were studied using channeled Rutherford Backscattering Spectrometry (RBS-c). The effects of photon-assisted hydrogenation on amorphization and recrystallization were also studied.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Bulk properties and velocity distributions of water group ions at Comet Halley - Giotto measurements

In the region upstream of Comet Halley, pickup heavy ions of cometary origin were directly observed by the implanted ion spectrometer on Giotto. Diffusion of this population in pitch angle and in energy, during the approach to the comet and on the outbound leg is discussed. The two data sets are compared and qualitative ideas on scattering timescales are inferred. In addition the bulk parameters of these distributions have been computed and a comparison of the observed speed in the solar wind frame and the observed density with expectations is presented. Pitch angle scattering occurs more slowly than expected with filled shells appearing at 2,500,000 km, and significant energy diffusion does not occur until the bow shock region. Also the shell distributions downstream of the shock flow at the bispherical bulk speed (related to the Alfven speed) along the magnetic field with respect to the solar wind in accordance with conservation of energy between the pickup ions and the wave turbulence.

Coates, A. J.↗
DOE OSTI2015

Nanoimplantation and Purcell enhancement of single nitrogen-vacancy centers in photonic crystal cavities in diamond

We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers is achieved using collimation of a 5 keV-nitrogen ion beam through a pierced tip of an atomic force microscope. We demonstrate coupling of the implanted NV centers' broad band fluorescence to a cavity mode and observe Purcell enhancement of the spontaneous emission. The results are in good agreement with a master equation model for the cavity coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Multiband semiconductor compositions for photovoltaic devices

The highly mismatched alloy Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x, 0.ltoreq.y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn.sub.1-yMn.sub.yTe host. With multiple band gaps that fall within the solar energy spectrum, Zn.sub.1-yMn.sub.yO.sub.xTe.sub.1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

36 MATERIALS SCIENCE↗