Quaternary Chalcogenide Semiconductors with 2D Structures: Rb 2 ZnBi 2 Se 5 and Cs 6 Cd 2 Bi 8 Te 17
In this work, two new layered compounds Rb 2 ZnBi 2 Se 5 and Cs 6 Cd 2 Bi 8 Te 17 are described. Rb 2 ZnBi 2 Se 5 crystallizes in the orthorhombic space group Pnma, with lattice parameters of a = 15.6509(17) Å, b = 4.218(8) Å, and c = 18.653(3) Å. Cs 6 Cd 2 Bi 8 Te 17 crystallizes in the monoclinic C2/m space group, with a = 28.646(6) Å, b = 4.4634(9) Å, c = 21.164(4) Å, and β = 107.65(3)°. The two structures are different and composed of anionic layers which are formed by inter connecting of BiQ 6 octahedra (Q = Se or Te) and MQ 4 (M = Zn or Cd) tetrahedra. The space between the layers hosts alkali metal as counter cations. The rubidium atoms of Rb 2 ZnBi 2 Se 5 structure can be exchanged with other cations (Cd 2+ , Pb 2+ and Zn 2+ ) in aqueous solutions forming new phases. Rb 2 ZnBi 2 Se 5 is an n-type semiconductor and exhibits an indirect band gap energy of 1.0 eV. Rb 2 ZnBi 2 Se 5 is a congruently melting compound (mp ~644 °C). The thermal conductivity of this semiconductor is very low with 0.38 W· m -1 ·K -1 at 873 K. Density functional theory (DFT) calculations suggest that the low lattice thermal conductivity of Rb 2 ZnBi 2 Se 5 is attributed to heavy Bi atom induced slow phonon velocities and large Gruneisen parameters especially in the a and c directions. The thermoelectric properties of Rb 2 ZnBi 2 Se 5 were characterized with the highest ZT value of ~0.25 at 839 K.