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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

The ionization structure of the circumstellar envelope of Alpha Orionis

The physical processes which affect the ionization of the outer circumstellar envelope of Alpha Ori are analyzed and evaluated. The ultraviolet radiation fields of the chromosphere and the interstellar medium dominate the envelope, and the most common forms of all species are neutral atoms and first ions. Hydrogen recombines just outside the chromosphere, where atoms with smaller ionization potential are essentially fully ionized. The heavier ions gradually recombine with increasing distance from the star, until the interstellar radiation field reverses this trend. The electron fraction in the outer envelope is approximately equal to the abundance of all such heavy atoms, i.e., of the order of 0.0001. The analysis is applied to the case of neutral K, whose density in the envelope has been determined by scattering experiments. The theory predicts that the slope of the K I density distribution should decrease from -1.5 to -3.5 in the outer envelope. The mass loss rate of Alpha Ori implied by the K I scattering experiments is 4 x 10 to the -6th solar mass/yr.

Glassgold, A. E.↗
NASA NTRS1989

Radiative decays of massive relic particles and the submillimeter background

The interaction of the decay photons of an unstable relic particle species with the microwave background radiation is considered. The radiative decays of these particles delay recombination and serve as an energy source for the resultant plasma. Nonrelativistic Compton scattering by these electrons couples the decay photons to the microwave background, producing submillimeter distortions. If the decay products close the universe, they must decay with a radiative branching ratio larger than 2.5 x 10 to the -5th in order to produce recently observed excess submillimeter background radiation. To be consistent with measurements of the UV background, their mass m is much greater than 114 keV and their decay redshift z is much greater than 5200.

Field, George B.↗
NASA NTRS1992

The spectrum of the tropical oxygen nightglow observed at 3 A resolution with the Hopkins Ultraviolet Telescope

Ultraviolet spectra of the tropical oxygen nightglow in the range of 830 to 1850 A (in first order) at 3 A resolution were obtained with the Hopkins Ultraviolet Telescope in December 1990. The data are presented which were obtained on a setting celestial target as the zenith angle of the line-of-sight varied from 77 to 95 deg. The dominant features in the spectrum (other than geocoronal hydrogen) are O I 1304 and 1356 and the radiative recombination continuum near 911 A. The continuum is resolved and found to be consistent with an electron temperature in the range 1000-1250 K. The observed ratio of the brightness of O I 1356 to the continuum suggests that O(+)-O(-) mutual neutralization contributes about 40 percent to the 1356 A emission. The dependence of the optically thin emissions on zenith angle is consistent with a simple ionospheric model. Weak O I 989 emission is also detected, but there is no evidence for any similarly produced atomic nitrogen emissions.

Feldman, P. D.↗
NASA NTRS1997

[New Determination of the Abundances of Oxygen, Nitrogen and Sulfur as a Function of Galactocentric Distance

The goals of this program were to obtain data which could provide the basis for a new determination of the abundances of Oxygen, Nitrogen, and Sulfur as a function of galactocentric distance. This program was preceded by a detailed VLA high resolution radio study of the ultracompact (UC) HII region G29.96 to demonstrate that reliable electron temperatures could be obtained with nonLTE modeling of the line intensities for a few radio recombination lines distributed over a reasonable range of principle quantum numbers. These results were published. Having demonstrated the technique, a survey of 28 UC HII regions located in the galactocentric distance range of 0- 17 kpc was undertaken. The lines of H42(alpha), H66(alpha), H76(alpha), and H93(alpha) were observed with spatial resolutions of 3.7 to 6.7 arc secs. The nonLTE models constrained by the new data produced a well-defined temperature gradient. This study provided an entirely independent check on direct measurements of abundances via the measurement of spectral lines from atomic coolants.

Churchwell, E. B.↗
NASA NTRS1990

Theoretical studies of important processes in planetary and comet atmospheres

Dissociative recombination (DR) reactions in planetary and comet atmospheres are discussed. A computer program was developed which determines DR cross sections and rates using potential curves and electronic capture widths. It uses Multi-Channel Quantum Defect Theory (MQDT) to include excited Rydberg resonance levels in the DR cross section and rate calculations. Each vibrational level of a molecular ion is the limit for an infinite series of Rydberg states. Above each ion vibrational level are Rydberg vibrational levels having higher ion levels as their series limit. These Rydberg vibrational levels are resonances, i.e., neutral states which are imbedded in the electron-molecular ion continuum. The process in which the Rydberg level causes an abrupt perturbation in the cross section for DR (because of interference between capture into the Rydberg level and capture into the repulsive dissociative state) is referred to as indirect recombination. The process in which the Rydberg levels are excluded and recombination goes from the entrance channel to the repulsive state is called direct recombination. The full DR process, i.e., both direct and indirect recombination, is the process of importance for planetary atmospheres. These ideas are illustrated with the new results for DR from excited ion vibrational levels of O2(+) into the dissociative state which leads to O(1S) + O(1D).

Guberman, Steven L.↗
DOE OSTI2022

Photoluminescence of Cis-Polyacetylene Semiconductor Material

Photoluminescence (PL) is one of the key experimental characterizations of optoelectronic materials, including conjugated polymers (CPs). In this study, a simplified model of an undoped cis-polyacetylene (cis-PA) oligomer was selected and used to explain the mechanism of photoluminescence (PL) of the CPs. Using a combination of the ab initio electronic structure and a time-dependent density matrix methodology, the photo-induced time-dependent excited state dynamics were computed. We explored the phonon-induced relaxation of the photoexcited state for a single oligomer of cis-PA. Here, the dissipative Redfield equation of the motion was used to compute the dissipative excited state dynamics of electronic degrees of freedom. This equation used the nonadiabatic couplings as parameters. The computed excited state dynamics showed that the relaxation rate of the electron is faster than the relaxation rate of the hole. The dissipative excited-state dynamics were combined with radiative recombination channels to predict the PL spectrum. The simulated results showed that the absorption and emission spectra both have a similar transition. The main result is that the computed PL spectrum demonstrates two mechanisms of light emission originating from (i) the inter-band transitions, corresponding to the same range of transition energies as the absorption spectrum and (ii) intra-band transitions not available in the absorption spectra. However, the dissipative Redfield equation of the motion was used to compute the electronic degrees of freedom of the nonadiabatic couplings, which helped to process the time propagation of the excited dynamic state. This excited dynamic state shows that the relaxation rate of the electron is faster than the relaxation rate of the hole, which can be used for improving organic semiconductor materials for photovoltaic and LED applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Minimizing hydrogen vacancies to enable highly efficient hybrid perovskites

Defect-induced non-radiative losses are currently limiting the performance of hybrid perovskite devices. Experimental reports have indicated the existence of point defects that act as detrimental non-radiative recombination centres under iodine-poor synthesis conditions. However, the microscopic nature of these defects is still unknown. Here we demonstrate that hydrogen vacancies can be present in high densities under iodine-poor conditions in the prototypical hybrid perovskite MAPbI 3 (MA = CH 3 NH 3 ). They act as very efficient non-radiative recombination centres with an exceptionally high carrier capture coefficient of 10 –4 cm 3 s –1 . By contrast, the hydrogen vacancies in FAPbI 3 [FA = CH(NH 2 ) 2 ] are much more difficult to form and have a capture coefficient that is three orders of magnitude lower. Our study unveils the critical but overlooked role of hydrogenvacancies in hybrid perovskites and rationalizes why FA is essential for realizing high efficiency in hybrid perovskite solar cells. Furthermore, minimizing the incorporation of hydrogen vacancies is key to enabling the best performance of hybrid perovskites.

14 SOLAR ENERGY↗
NASA NTRS1992

Improved calculations for the C III 1907,1909 and Si III 1883,1892 electron density sensitive emission-line ratios, and a comparison with IUE observations

Atomic data are used in conjunction with the statistical equilibrium code of Dufton (1977) to calculate relative C III and Si III level populations, and hence emission-line strengths for a range of electron temperatures and densities. It is assumed that photoexcitation and deexcitaton rates are negligible in comparison with the corresponding collisional rates, that ionization to and recombination from other ionic levels are slow compared with bound-bound rates, and that all transitions are optically thin. The observed values of R1 and R2 for several planetary nebulae and a symbiotic star, measured from high-resolution spectra obtained with the IUE satellite, lead to electron densities that are compatible, and are also in good agreement with those deduced from line ratios in other species.

Keenan, F. P.↗
DOE OSTI2023

Measurement of the conduction band spin-orbit splitting in $\mathrm{WSe_2}$ and $\mathrm{WS_2}$ monolayers

We have investigated charge tunable devices based on $\mathrm{WSe_2}$ and $\mathrm{WS_2}$monolayers encapsulated in hexagonal boron nitride. In addition to the well-known radiative recombination of neutral and charged excitons, stationary photoluminescence measurements highlight a weaker-intensity optical transition that appears when the monolayer is electrostatically doped with electrons. We have carried out a detailed characterization of this photoluminescence line based on its doping dependence, its variation as a function of the optical excitation power, its polarization characteristics, and its g factor measured under longitudinal magnetic field. We interpret this luminescence peak as an impurity-assisted radiative recombination of the intervalley negatively charged exciton (triplet trion). In addition to the standard direct recombination, the triplet trion has a second recombination channel triggered by elastic scattering off the short-range impurity potential. The energy difference between the emitted photons from these two possible recombination processes of the same triplet trion is simply the single-particle conduction band spin-orbit splitting Δ c . We measure Δ c = 12 ± 0.5 meV for the $\mathrm{WSe_2}$ monolayer and Δ c = 12 ± 1 meV for the $\mathrm{WS_2}$ monolayer. Here, these results demonstrate the importance of second-order exciton recombination processes in transition-metal dichalcogenide structures.

2-dimensional systems↗
NASA NTRS1983

Core level excitation of simple gases

The ionization of simple gases by electron bombardment exhibits distinct resonances at electron energies slightly below the core level binding energies of the atomic constituents of the gas. A vacancy in an inner shell of the atom may recombine by a radiationless Auger process, thus leaving the molecule in a singly or higher ionized state. These ions are easily collected and the threshold resonances for excitation are evident in the second derivative of the ion yield plotted as a function of the energy of the electron beam. By using a mixture of gases, such as CO and CO2, it is possible to measure relative chemical shifts of the C and O 1s thresholds. In this case the C 1s threshold is 3.9 eV lower in CO than in CO2, and the O 1s threshold is 2.7 eV lower in CO than in CO2. The feasibility of constructing a simple analyzer based on this technique will be discussed to supplement conventional mass spectrometer analysis of gas composition.

Zhang, A.↗
NASA NTRS1984

Surface and allied studies in silicon solar cells

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Lindholm, F. A.↗
DOE OSTI2021

EBSD of Rough Native CuInGaSe2 Thin-Films

The polycrystalline Cu (In, Ga) Se2, or CIGS, based thin-film materials system has long been studied for use in photovoltaic technologies, where its bandgap tunability, mechanical flexibility, and relatively low production costs are all appealing. Nonetheless, significant defect populations, which serve to reduce efficiency, create performance instabilities, and increase concerns about long-term reliability, have hindered wide-scale adoption. Prior work, including application of a scanning probe based deep level trap spectroscopy (SP-DLTS) defect mapping technique and scanning transmission electron microscope (STEM) based electron energy loss spectroscopy (EELS), has shown that the most detrimental defects, with energy level near mid-gap (thus serving as a carrier recombination center), are most likely caused by CuIn/Ga antisites and tend to cluster at or around certain grain boundaries [1,2]. However, the exact nature of these particular boundaries — their structures, chemistries, or even the relative misorientation of their associated grains — and their relation to this defect clustering and/or its formation is yet unknown. As such, electron backscatter diffraction (EBSD) orientation mapping, directly correlated with defect-sensitive techniques like SP-DLTS and/or STEM-EELS, could prove critical for providing the final missing links toward understanding the mechanisms behind these defects. Indeed, recent studies using correlative electron beam induced current (EBIC) with EBSD have been able to identify boundaries, and their relative misorientations, that possess detrimental electronic properties [3]. However, because EBIC is unable to resolve the defect energy levels, many questions are left unanswered. Furthermore, this study, and others like it, employed focused ion beam (FIB) milling to flatten the natively-rough CIGS [3-5], which may run the risk of changing the nature of any near-surface defect structures.

14 SOLAR ENERGY↗
NASA NTRS1975

Influence of probe contamination on recombination of atomic hydrogen

Atomic hydrogen concentration profiles were measured through a screen-stabilized one-dimensional propane/oxygen front using a specially modified electron spin resonance (ESR) spectrometer. The ESR line occurring at 3075.5 G at 9261.2 MHz was monitored in the presence and absence of various halogenated hydrocarbons. A significant cumulative decrease in peak intensity occurred with addition of any halogenated compound. Further results suggest that the effect is due to inhibitor action on the transport tube walls followed by changes in atomic hydrogen interaction with the walls, and that hydrogen decay is nonlinear in the halogenated tube.

Collins, L. W.↗
DOE OSTI2026

Analysis of native oxides grown on single-crystal CdTe and MgCdTe

Over the course of CdTe photovoltaics development, many refinements to the device stack have been made. One area of current interest is the back contact interface, where surface passivation is critical to prevent recombination at the interface. One candidate material for achieving strong passivation is TeO 2 . Using scanning transmission electron microscopy, we investigate native oxide formations on CdTe and Mg x Cd 1−x Te substrates to better understand the oxides' chemical composition and the interface they form with the material they are grown on. We find that substoichiometric TeO x forms as a native oxide on CdTe, and on Mg x Cd 1−x Te, we found a MgO native oxide. Some TeO x appeared atop the MgO layer, though it was not consistently present. As a result, the native oxides had preferential interface terminations, with Cd terminations at the CdTe/TeO x interface and Te terminations at the Mg x Cd 1−x Te/MgO interface.

14 SOLAR ENERGY↗
DOE OSTI2026

Band Structure-Driven Design of a α-CsPbI 3 Ammonia Sensor for Industrial Applications

We investigate the defect-dependent electronic structure and gas-sensing potential of cubic α-CsPbI 3 using first-principles density functional theory and nonadiabatic molecular dynamics. Among the intrinsic defects, interstitials, vacancies, antisites, and switches studied, the I Pb and Pb I antisite defects exhibit transition energy levels near the middle of the band gap, thus functioning as deep traps. Short-term adsorption of ammonia selectively modifies the electronic structure, coordinating with Pb at Pb I sites and Cs at I Pb sites, significantly altering recombination pathways. Detailed analysis reveals that NH 3 reduces anharmonicity at I Pb defects, enabling enhanced recombination at elevated temperatures, while trap-assisted recombination dominates at room temperature. Other analytes, including CH 3 NH 2 and NO 2 , show negligible impact on the band gap or recombination dynamics, highlighting the potential selectivity of NH 3 interactions. Ab initio nonadiabatic molecular dynamics simulations at 300 K and 600 K further demonstrate temperature-dependent modulation of carrier lifetimes, with NH 3 accelerating recombination at ambient conditions and suppressing certain pathways at higher temperatures. These findings suggest that α-CsPbI 3 can serve as a selective and sensitive ammonia sensor over a broad temperature range and offer insights for ammonia detection under industrially relevant conditions.

ammonia sensor↗
NASA NTRS1973

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Bullis, W. M.↗
NASA NTRS1974

Effect of inelastic electron-atom collisions on the Balmer decrement

Calculation of the Balmer decrement in radiatively ionized hydrogen gas as a function of temperature and density, taking into account the effect of electron-atom collisions. It is found that once the electron density exceeds 10 to the 10th power per cu cm significant deviations from the normal radiative recombination decrement begin to occur. Implications of these results for the physical conditions in the line-emitting region of the Seyfert galaxy NGC 4151 are discussed briefly.

Adams, W. M.↗
NASA NTRS1976

Metastable 2D atomic nitrogen in the mid-latitude nocturnal ionosphere

The only source at night at midlatitudes of N(2D) in the F region is the dissociative recombination of the positive NO ion, and the only important sinks are quenching by atomic oxygen and electrons. Ground-based measurements of the 5200 angstrom emission line resulting from the transition from N(2D) to N(4S) combined with satellite observations of neutral and ion densities and temperatures and the shape of the 5200 angstrom profile are used to relate the rate of quenching by atomic oxygen and the efficiency of production of N(2D) to the rate of quenching by electrons. A rate of quenching by atomic oxygen of 1.5-2.5 x 10 to the minus 12th cu cm/s and an efficiency of (0.8-1.0) plus or minus 30% for the production of N(2D) are obtained.

Torr, M. R.↗