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At least 739 records · Page 41

Effect of oxygen vacancy on half metallicity in Ni-doped CeO{sub 2} diluted magnetic semiconductor

The electronic and magnetic properties of Ni-doped CeO{sub 2} diluted amgentic semiconductor (DMS) including the effect of oxygen vacancy (V{sub o}) with doping concentration, x = 0.125 have been calculated using FPLAPW method based on Density Functional Theory (DFT) as implemented in WIEN2k. In the present supercell approach, the XC potential was constructed using GGA+U formalism in which Coulomb correction is applied to standard GGA functional within the parameterization of Perdew-Burke-Ernzerhof (PBE). We have found that the ground state properties of bulk CeO{sub 2} compound have been modified significantly due to the substitution of Ni-dopant at the cation (Ce) site with/without V{sub O} and realized that the ferromagnetism in CeO{sub 2} remarkably depends on the V{sub o} concentrations. The presence of V{sub o}, in Ni-doped CeO{sub 2}, can leads to strong ferromagnetic coupling between the nearest neighboring Ni-ions and induces a HMF in this compound. Such ferromagnetic exchange coupling is mainly attributed to spin splitting of Ni-d states, via electrons trapped in V{sub o}. The HMF characteristics of Ni-doped CeO{sub 2} including V{sub o} makes it an ideal material for spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Evolution of short-range magnetic correlations in ferromagnetic Ni-V alloys

Here we experimentally study how the magnetic correlations develop in a binary alloy close to the ferromagnetic quantum critical point with small-angle neutron scattering (SANS). Upon alloying the itinerant ferromagnet nickel with vanadium, the ferromagnetic order is continuously suppressed. The critical temperature T c vanishes when vanadium concentrations reach the critical value of x c =0.116 indicating a quantum critical point separating the ferromagnetic and paramagnetic phases. Earlier magnetization and μ⁢SR data have indicated the presence of magnetic inhomogeneities in Ni 1-x ⁢V x and, in particular, recognize the magnetic clusters close to x c , on the paramagnetic and on the ferromagnetic sides with nontrivial dynamical properties [R. Wang et al., Phys. Rev. Lett. 118, 267202 (2017)]. We present the results of SANS study with full polarization analysis of polycrystalline Ni 1-x⁢ V x samples with x=0.10 and x=0.11 with low critical temperatures T c <50 K. For both Ni-V samples close to x c we find isotropic magnetic short-range correlations on the nanometer scale persisting at low temperatures. They are suppressed gradually in higher magnetic fields. In addition, signatures of long-range ordered magnetic domains are present below T c . The fraction of these magnetic clusters embedded in the ferromagnetic ordered phase grows toward x c and agrees well with the cluster fraction estimate from the magnetization and μ⁢SR data. Our SANS studies provide new insights into the nature of the inhomogeneities in a ferromagnetic alloy close to a quantum critical point.

36 MATERIALS SCIENCE↗

Chemical synthesis, characterizations and magnetic properties of nanocrystalline Fe{sub 50}Co{sub 50} alloy

Nanocrystalline Fe{sub 50}Co{sub 50} alloy has been synthesized successfully by chemical reduction route using superhydride as reducing agent and oleic acid and oleylamine as capping agents. Phase purity, crystallite size and lattice parameters of the synthesized NPs are determined by X-ray powder diffraction method. FeCo alloy crystallizes in body centered cubic (bcc) structure having crystallite size equal to 29 nm and lattice parameters equal to 2.8546 Å. The size and shape morphologies of the material were studied by SEM analysis. SEM micrograph study shows the average particle size to be 60 nm and indicates the appearance of agglomerates of the nano-particles consisting of several crystallites. The room temperature magnetic hysteresis studies indicate ferromagnetic behavior of the materials. The values of saturation magnetization and coercivity were 65 emu/g and 460 Oe, respectively. Magnetic properties of the material were interpreted on the basis of fine particle magnetism.

36 MATERIALS SCIENCE↗

Ferromagnetism in proton irradiated 4H-SiC single crystal

Room-temperature ferromagnetism is observed in proton irradiated 4H-SiC single crystal. An initial increase in proton dose leads to pronounced ferromagnetism, accompanying with obvious increase in vacancy concentration. Further increase in irradiation dose lowers the saturation magnetization with the decrease in total vacancy defects due to the defects recombination. It is found that divacancies are the mainly defects in proton irradiated 4H-SiC and responsible for the observed ferromagnetism.

36 MATERIALS SCIENCE↗

Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy

Magnetoresistive random access memory (MRAM) has some advantages over other types of memory. However, MRAM has one substantial drawback: the current density and magnetic field that must be applied to switch the spin-valve free layer inside an MRAM cell are too high. The dependence of the current density and switching magnetic field on the magnetic parameters of the material from which the ferromagnetic layers of a spin valve are fabricated is therefore analyzed. A comparison of the critical characteristics of a spin valve with longitudinal anisotropy shows that cobalt, iron, and alloys of them; cobalt ferroborates; and alloys of cobalt with gadolinium, are promising materials for fabricating spin valves. Bifurcation diagrams of equations that describe the valve switching process are presented and analyzed. The four optimum switching modes of a valve are selected, based on an investigation of the dynamics of the magnetization vector. The magnitudes of the external magnetic field and controlling injection current that correspond to stable MRAM cell switching are compared for a variety of materials. The switching time of an MRAM cell is estimated numerically, and the conditions for its optimum speed are determined. It is established that the most promising materials for spin-valve fabrication are Fe{sub 40}Co{sub 40}B{sub 20} and Co{sub 80}Gd{sub 20}, annealed at 300 and 200°C, respectively.

36 MATERIALS SCIENCE↗

Microwave-induced spin currents in ferromagnetic-insulator|normal-metal bilayer system

A microwave technique is employed to simultaneously examine the spin pumping and the spin Seebeck effect processes in a YIG|Pt bilayer system. The experimental results show that for these two processes, the spin current flows in opposite directions. The temporal dynamics of the longitudinal spin Seebeck effect exhibits that the effect depends on the diffusion of bulk thermal-magnons in the thermal gradient in the ferromagnetic-insulator|normal-metal system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct Imaging of Antiferromagnet-Ferromagnet Phase Transition in van der Waals Antiferromagnet CrSBr

The advent of van der Waals (vdW) ferromagnetic (FM) and antiferromagnetic (AFM) materials offers unprecedented opportunities for spintronics and magneto-optic devices. Combining magnetic Kerr microscopy and density functional theory calculations, the AFM-FM transition is investigated and a surprising abnormal magneto-optic anisotropy in vdW CrSBr associated with different magnetic phases (FM, AFM, or paramagnetic state) is discovered. This unique magneto-optic property leads to different anisotropic optical reflectivity from different magnetic states, permitting direct imaging of the AFM Néel vector orientation and the dynamic process of the AFM-FM transition within a magnetic field. Using Kerr microscopy, not only the domain nucleation and propagation process is imaged but also the intermediate spin-flop state in the AFM-FM transition is identified. In conclusion, the unique magneto-optic property and clear identification of the dynamics process of the AFM-FM phase transition in CrSBr demonstrate the promise of vdW magnetic materials for future spintronic technology.

36 MATERIALS SCIENCE↗

Quantum anomalous Hall effect in ferromagnetic transition metal halides

The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of intrinsic QAH insulators. However, up to now, it has only been observed in Cr or V doped (Bi,Sb) 2 Te 3 film in experiments with very low working temperature. Based on the successful synthesis of transition metal halides, we use first-principles calculations to predict that the RuI 3 monolayer is an intrinsic ferromagnetic QAH insulator with a topologically nontrivial global band gap of 11 meV. This topologically nontrivial band gap at the Fermi level is due to its crystal symmetry, thus the QAH effect is robust. Its Curie temperature, estimated to be ~360K using Monte Carlo simulation, is above room temperature and higher than most two-dimensional ferromagnetic thin films. The inclusion of Hubbard U in the Ru-d electrons does not affect this result. Furthemore, we also discuss the manipulation of its exchange energy and nontrivial band gap by applying in-plane strain. Our work adds an experimentally feasible member to the QAH insulator family, which is expected to have broad applications in nanoelectronics and spintronics.

36 MATERIALS SCIENCE↗

Spin and lattice dynamics of the two-dimensional van der Waals ferromagnet CrI3

Chromium tri-iodide (CrI 3 ) is a prototypical ferromagnetic van der Waals insulator with its genuinely two-dimensional (2D) long-range magnetic order below 45 K demonstrated recently. The underlying magnetic anisotropy has not been completely understood while both the Dzyaloshinskii-Moriya (DM) interaction and the Kitaev—Γ type interaction have been considered as the relevant magnetic Hamiltonian. In addition, the relation between the crystal structure and the magnetic order needs to be further elucidated concerning their possible coupling in few-layer samples and in the topmost surface layers of bulk samples. Here, we investigate these issues via temperature- and magnetic field-dependent terahertz spectroscopy on bulk CrI 3 single crystals, focusing on the dynamics of ferromagnetic resonances (FMRs) and optical phonons in the terahertz (THz) region from 4 to 120 cm -1 (from 0.5 to 15 meV). We narrow down the possible ranges of the interaction parameters such as the off-diagonal symmetric terms and the single-ion anisotropy. The accurate values of these parameters significantly constrain the magnitude of possible Kitaev—Γ exchange interaction and the topological magnon gap. Moreover, the structure-magnetism relationship was critically analyzed based on the temperature- and field-dependences of two E u in-plane optical phonon modes, which shows that the commonly believed structural phase diagram of CrI 3 , derived from surface-preferential data, has to be seriously modified.

36 MATERIALS SCIENCE↗

Thin-film topological insulator-ferromagnet heterostructures for terahertz detection

An atomically thin topological insulator is investigated theoretically for long-wavelength photodetection when it interacts with a magnetic material. Through the coupling between top and bottom surfaces as well as the exchange interaction with the proximate ferromagnet, the distribution of optically excited carriers exhibits unique patterns that depend sensitively on the frequency of the incoming light. This effect results in the generation of strong nonzero photocurrent, leading potentially to room-temperature detection of far-infrared/THz radiation with the advantage of low noise and fast response. The ease of frequency tuning by an external electrical bias offers an added versatility in the realistic implementation.

36 MATERIALS SCIENCE↗

Indirect excitation of ultrafast demagnetization

Does the excitation of ultrafast magnetization require direct interaction between the photons of the optical pump pulse and the magnetic layer? Here, we demonstrate unambiguously that this is not the case. For this we have studied the magnetization dynamics of a ferromagnetic cobalt/palladium multilayer capped by an IR-opaque aluminum layer. Upon excitation with an intense femtosecond-short IR laser pulse, the film exhibits the classical ultrafast demagnetization phenomenon although only a negligible number of IR photons penetrate the aluminum layer. In comparison with an uncapped cobalt/palladium reference film, the initial demagnetization of the capped film occurs with a delayed onset and at a slower rate. Both observations are qualitatively in line with energy transport from the aluminum layer into the underlying magnetic film by the excited, hot electrons of the aluminum film. As a result, our data thus confirm recent theoretical predictions.

36 MATERIALS SCIENCE↗

Thin-film encapsulation of the air-sensitive organic-based ferrimagnet vanadium tetracyanoethylene

The organic-based ferrimagnet vanadium tetracyanoethylene (V[TCNE]{sub x∼2}) has demonstrated potential for use in both microwave electronics and spintronics due to the combination of high temperature magnetic ordering (T{sub C} > 600 K), extremely sharp ferromagnetic resonance (peak to peak linewidth of 1 G), and low-temperature conformal deposition via chemical vapor deposition (deposition temperature of 50 °C). However, air-sensitivity leads to the complete degradation of the films within 2 h under ambient conditions, with noticeable degradation occurring within 30 min. Here, we demonstrate encapsulation of V[TCNE]{sub x∼2} thin films using a UV-cured epoxy that increases film lifetime to over 710 h (30 days) as measured by the remanent magnetization. The saturation magnetization and Curie temperature decay more slowly than the remanence, and the coercivity is unchanged after 340 h (14 days) of air exposure. Fourier transform infrared spectroscopy indicates that the epoxy does not react with the film, and magnetometry measurements show that the presence of the epoxy does not degrade the magnetic properties. This encapsulation strategy directly enables a host of experimental protocols and investigations not previously feasible for air-sensitive samples and lays the foundation for the development of practical applications for this promising organic-based magnetic material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Epitaxial patterning of nanometer-thick Y 3 Fe 5 O 12 films with low magnetic damping

Magnetic insulators such as yttrium iron garnet, Y 3 Fe 5 O 12 , with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and effcient spin current generation and transmission. We demonstrate reliable and effcient epitaxial growth and nanopatterning of Y 3 Fe 5 O 12 thin-film based nanostructures on insulating Gd 3 Ga 5 O 12 substrates. In particular, our fabrication process is compatible with conventional sputtering and liftoff, and does not require aggressive ion milling which may be detrimental to the oxide thin films. Structural and magnetic properties indicate good qualities, in particular low magnetic damping of both films and patterned structures. The dynamic magnetic properties of the nanostructures are systematically investigated as a function of the lateral dimension. By comparing to ferromagnetic nanowire structures, a distinct edge mode in addition to the main mode is identified by both experiments and simulations, which also exhibits cross-over with the main mode upon varying the width of the wires. In conclusion, the non-linear evolution of dynamic modes over nanostructural dimensions highlights the important role of size confinement to their material properties in magnetic devices where Y 3 Fe 5 O 12 nanostructures serve as the key functional component.

36 MATERIALS SCIENCE↗

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Influence of La substitution on ferromagnetic properties of lead free Na{sub 0.5}Bi{sub 0.5}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} multiferroic system

To study the effect of La doping and processing temperature, (Na{sub 0.5}Bi{sub 0.5}){sub 1−x}La{sub x}Ti{sub 0.988}Fe{sub 0.012}O{sub 3} (NBLTF) samples have been prepared by sol-gel method by employing two approaches namely with and without mol% excess of Na and Bi. X-ray diffraction analysis confirms the formation of rhombohedral perovskite structure in these samples with minor impurity phases. However, the impurity phases of stochiometric NBLTF samples disappear on increasing the sintering temperature from 650°C to 850°C. On other hand, NBLTF samples prepared with mol% excess of Na and Bi have shown pure perovskite structure only at lower sintering temperature 650°C and also at low concentration of La ∼ 1%. Transmission electron microscope investigation shows nano crystalline formation for all NBLTF samples sintered at 850°C. The enhancement in room temperature ferromagnetism is observed in La doped NBTF samples prepared at 850°C by taking stoichiometric amount of Na and Bi during synthesis.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Effective spin- 1 2 scalar chiral order on kagome lattices in Nd 3 Sb 3 Mg 2 O 14

We introduce Nd 3 Sb 3 Mg 2 O 14 with ideal kagome lattices of neodymium ions in ABC stacking. Thermodynamic measurements show a Curie-Weiss temperature of Θ CW = – 0.12 K, a Nd 3+ spin- 1 2 Kramers doublet ground state, and a second-order phase transition at T N = 0.56 (2) K. Neutron scattering reveals noncoplanar scalar chiral k = 0 magnetic order with a correlation length exceeding 400 Å = 55a and an ordered moment of 1.79 (5) μ B . Furthermore, this order includes a canted ferromagnetic component perpendicular to the kagome planes favored by Dzyaloshinskii-Moriya interactions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Role of Magnetic Defects in Tuning Ground States of Magnetic Topological Insulators

Abstract Magnetic defects play an important, but poorly understood, role in magnetic topological insulators (TIs). For example, topological surface transport and bulk magnetic properties are controlled by magnetic defects in Bi 2 Se 3 ‐based dilute ferromagnetic (FM) TIs and MnBi 2 Te 4 (MBT)‐based antiferromagnetic (AFM) TIs. Despite its nascent ferromagnetism, the inelastic neutron scattering data show that a fraction of the Mn defects in Sb 2 Te 3 form strong AFM dimer singlets within a quintuple block. The AFM superexchange coupling occurs via Mn–Te–Mn linear bonds and is identical to the AFM coupling between antisite defects and the FM Mn layer in MBT, establishing common interactions in the two materials classes. It is also found that the FM correlations in (Sb 1− x Mn x ) 2 Te 3 are likely driven by magnetic defects in adjacent quintuple blocks across the van der Waals gap. In addition to providing answers to long‐standing questions about the evolution of FM order in dilute TI, these results also show that the evolution of global magnetic order from AFM to FM in Sb‐substituted MBT is controlled by defect engineering of the intrablock and interblock coupling.

36 MATERIALS SCIENCE↗

Mn 5 Si 3 Nanoparticles: Synthesis and Size-Induced Ferromagnetism

Mn-based silicides are fascinating due to their exotic spin textures and unique crystal structures, but the low magnetic ordering temperatures and/or small magnetic moments of bulk alloys are major impediments to their use in practical applications. In sharp contrast to bulk Mn 5 Si 3 , which is paramagnetic at room temperature and exhibits low-temperature antiferromagnetic ordering, we show ferromagnetic ordering in Mn 5 Si 3 nanoparticles with a high Curie temperature (T c ≈ 590 K). The Mn 5 Si 3 nanoparticles have an average size of 8.6 nm and also exhibit large saturation magnetic polarizations (J s = 10.1 kG at 300 K and 12.4 kG at 3 K) and appreciable magnetocrystalline anisotropy constants (K 1 = 6.2 Mergs/cm 3 at 300 K and at 12.8 Mergs/cm 3 at 3 K). Here, the drastic change of the magnetic ordering and properties in the nanoparticles are attributed to low-dimensional and quantum-confinement effects, evident from first-principle density-functional-theory calculations.

36 MATERIALS SCIENCE↗