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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Quasi-linear pitch angle and energy diffusion of pickup ions near Comet Halley

The process of ion pickup in the environment of Halley's comet is studied in order to see if velocity diffusion driven by the observed level of turbulence can explain the observed development of the implanted ion distribution. The theoretical description used is based on a quasi-linear approach and considers the implantation and transport of cometary ions along solar wind flow lines. To make such a study requires some way of extrapolating the measurements on the Giotto trajectory into the upstream region; models for mass loading and turbulence are used. A simplified kinetic equation describing the source, convection, and quasi-linear velocity diffusion of the heavy cometary ions is solved numerically along flow lines parallel to the sun-comet line. Full two-dimensional (pitch angle and velocity) distributions are obtained at positions along the Giotto trajectory, which are compared with measurements. This study finds that quasi-linear theory, with the empirical model for the observed turbulence level, produces the right order of pitch angle diffusion.

Huddleston, D. E.↗
DOE OSTI2024

Microstructural evolution in doped high entropy alloys NiCoFeCr-3X (X=Pd/Al/Cu) under irradiation

Commonly studied equatomic single-phase FCC high entropy alloys based on 3d transition metals like NiCoFeCr do not provide adequate strength and radiation resistance at high doses for nuclear structural applications. In the current study, the major alloying effects like lattice distortion, ordering and clustering tendencies were investigated by adding low concentration of Pd, Al, or Cu respectively to study the doping effects on the ion irradiation response of NiCoFeCr alloy. The alloys were irradiated with 3 MeV Ni 2+ ions at 500 °C to a fluence of 1 × 10 17 /cm 2 at a beam flux of approximately 2.8 × 10 12 ions/cm 2 /s. The microstructural evolution upon irradiation i.e., formation of dislocation networks, radiation induced segregation and precipitation, and void formation were studied in detail. Further, post-irradiation characterization results showed that a Pd addition leads to a high void nucleation rate but controlled void growth, which may be attributed to increased lattice distortion. In Al added HEA, our microstructural analysis indicates that radiation induced ordered L1 2 precipitates do not affect void swelling significantly. Cu addition led to Cu precipitation that drastically suppressed dislocation density and void swelling of the alloy. Additionally, a model was developed to qualitatively describe the trend in void swelling of typical FCC alloys under ion irradiation. This model was able to qualitatively explain the suppression and reappearance of void swelling in ion irradiated alloys that generally occurs near the region with peak implanted ion concentration.

36 MATERIALS SCIENCE↗
NASA NTRS1987

The Giotto three-dimensional positive ion analyser

An instrument to measure the three-dimensional energy distribution of positive ions in order to study the interaction between the solar wind and ionized Halley cometary particles was designed. Two sensors measure the distribution from 10 eV to 20 keV once per spacecraft spin and the distribution from 90 eV to 90 keV, with coarse mass discrimination, once every 32 spins. The instrument was turned on September 8, 1985. The performance throughout all testing was nominal. The spacecraft was greater than 10 million km from the earth in the solar wind. The only population identified is the solar wind. The Fast Ion Sensor follows solar wind variations with its autoranging capability. The Implanted Ion Sensor identifies higher mass ions such as O(6+) and O(5+) in the solar wind.

Johnstone, A. D.↗
DOE OSTI2021

Decoupling the metal insulator transition and crystal field effects of VO 2

VO 2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the T c can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO 2 (Cr-VO 2 and Co-VO 2 ) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO 2 and Co-VO 2 films showed sharp MIT features. The T c values of the Cr-VO 2 and Co-VO 2 films first decreased and then increased relative to that of pristine VO 2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO 2 films with a Cr ion flux ≥ 10 13 ions/cm 2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t 2g and e g orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at both vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO 2 experiences a sharp MIT when the distance of V–V pairs undergoes an SPT without any transitions in either the VO 6 octahedrons or the V 3d t 2g and eg states. This indicates that the MIT of VO 2 occurs with no changes of the crystal fields.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Ion beam technology applications study

Specific perceptions and possible ion beam technology applications were obtained as a result of a literature search and contact interviews with various institutions and individuals which took place over a 5-month period. The use of broad beam electron bombardment ion sources is assessed for materials deposition, removal, and alteration. Special techniques examined include: (1) cleaning, cutting, and texturing for surface treatment; (2) crosslinking of polymers, stress relief in deposited layers, and the creation of defect states in crystalline material by ion impact; and (3) ion implantation during epitaxial growth and the deposition of neutral materials sputtered by the ion beam. The aspects, advantages, and disadvantages of ion beam technology and the competitive role of alternative technologies are discussed.

Sellen, J. M., Jr.↗
NASA NTRS1993

Excimer laser processing of backside-illuminated CCDS

An excimer laser is used to activate previously implanted dopants on the backside of a backside-illuminated CCD. The controlled ion implantation of the backside and subsequent thin layer heating and recrystallization by the short wavelength pulsed excimer laser simultaneously activates the dopant and anneals out implant damage. This improves the dark current response, repairs defective pixels and improves spectral response. This process heats a very thin layer of the material to high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature. Excimer laser processing backside-illuminated CCD's enables salvage and utilization of otherwise nonfunctional components by bringing their dark current response to within an acceptable range. This process is particularly useful for solid state imaging detectors used in commercial, scientific and government applications requiring a wide spectral response and low light level detection.

Russell, S. D.↗
NASA NTRS2001

Ar Atmosphere: Implications for Structure and Composition of Mercury's Crust

We examine the possibilities of sustaining an argon atmosphere by diffusion from the upper 10 km of crust, and alternatively by effusion from a molten or previously molten area at great depth . Ar-40 in the atmospheres of the planets is a measure of potassium abundance in the interiors since Ar-40 is a product of radiogenic decay of K-40 by electron capture with the subsequent emission of a 1.46 eV gamma-ray. Although the Ar-40 in the earth's atmosphere is expected to have accumulated since the late bombardment, Ar-40 in surface-bounded exospheres is eroded quickly by photoionization and electron impact ionization. Thus, the argon content in the exospheres of the Moon, Mercury and probably Europa is representative of current effusion rather than accumulation over the lifetime of the body. Argon content will be a function of K content, temperature, grain size distribution, connected pore volume and possible seismic activity. Although Mercury and the Moon differ in many details, we can train the solutions to diffusion equations to predict the average lunar atmosphere. Then these parameters can be varied for Hermean conditions. Assuming a lunar crustal potassium abundance of 300 ppm, the observed argon atmosphere requires equilibrium between the argon production in the upper 9 Km of the moon (1.135 x 10(exp -3) cm(exp -3) s(exp -1)) and its loss. Hodges et al. conclude that this loss rate and the observed time variability requires argon release through seismic activity, tapping a deep argon source. An important observation is that the extreme surface of the Moon is enhanced in argon rather than depleted, as one would expect from outgassing of radiogenic argon. Manka and Michel concluded that ion implantation explains the surface enhancement of Ar-40. About half of the argon ions produced in the lunar atmosphere would return to the surface, where they would become embedded in the rocks. Similarly, at Mercury we expect the surface rocks to be enhanced in Ar-40 wherever the magnetosphere has been open over time. Thus the measurement of surface composition will reveal the long-term effects of solar wind-magnetosphere interaction. Additional information is contained in the original extended abstract.

Killen, R. M.↗
DOE OSTI2020

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (104) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 10 8 to 3 × 10 7 cm −2 , determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

Wang, Yekan↗
DOE OSTI2016

Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies

The distributions of hydrogen-containing donors in Ge{sub 1–x}Si{sub x} (0 ≤ x ≤ 0.06) alloys implanted with hydrogen ions with an energy of 200 and 300 keV and a dose of 1 × 10{sup 15} cm{sup –2} are studied. It is established that, at the higher ion energy, the limiting donor concentration after postimplantation heat treatment (275°C) is attained within ~30 min and, at the lower energy, within ~320 min. In contrast to donors formed near the surface, a portion of hydrogen-containing donors formed upon the implantation of ions with the higher energy possess the property of bistability. The limiting donor concentration is independent of the ion energy, but decreases from 1.3 × 10{sup 16} to 1.5 × 10{sup 15} cm{sup –3}, as the Si impurity content in the alloy is increased from x = 0.008 to x = 0.062. It is inferred that the observed differences arise from the participation of the surface in the donor formation process, since the surface significantly influences defect-formation processes involving radiation-induced defects, whose generation accompanies implantation.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Photoluminescence in silicon implanted with erbium ions at an elevated temperature

Photoluminescence spectra of n-type silicon upon implantation with erbium ions at 600 Degree-Sign C and oxygen ions at room temperature and subsequent annealings at 1100 Degree-Sign C in a chlorine-containing atmosphere have been studied. Depending on the annealing duration, photoluminescence spectra at 80 K are dominated by lines of the Er{sup 3+} ion or dislocation-related luminescence. The short-wavelength shift of the dislocation-related luminescence line observed at this temperature is due to implantation of erbium ions at an elevated temperature. At room temperature, lines of erbium and dislocation-related luminescence are observed in the spectra, but lines of near-band-edge luminescence predominate.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Thermal annealing of unetched fission tracks in apatite

Tracks created by fission events in ceramics are randomly-oriented, linear radiation-damage regions about 10 to 25 μm in length but only several nm in diameter. In the absence of a method to observe the entire length of a latent, unetched track, the details of the structure and the process of the thermal-annealing of tracks have remained elusive, despite their importance to fission track thermochronology and radiation damage studies in nuclear materials. Here, we have used a novel sample preparation technique, together with advanced transmission electron microscopy (TEM), to successfully image the entire length and in situ thermal annealing of latent tracks created by 80 MeV Xe ions implanted in apatite. Track annealing significantly increases as the track diameter decreases along the ion trajectory from an initial diameter of 8.9 nm to ~ 1.5 nm at the end of the track (total track length ~ 8.1 μm). For the first time, the initial, rapid reduction in etched length during isothermal annealing can be essentially explained by the rapid annealing of the sections of the track with smaller diameters, as observed directly by TEM.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

Dependence of short and intermediate-range order on preparation in experimental and modeled pure a-Si

Variability in the short-to-intermediate range order of pure amorphous silicon prepared by different experimental and computational techniques is probed by measuring mass density, atomic coordination, bond-angle deviation, and dihedral angle deviation. It is found that there is significant variability in order parameters at these length scales in this archetypal covalently bonded, monoatomic system. This diversity strongly reflects preparation technique and thermal history in both experimental and simulated systems. Experiment and simulation do not fully quantitatively agree, partly due to differences in the way parameters are accessed. However, qualitative agreement in the trends is identified. Relaxed forms of amorphous silicon closely resemble continuous random networks generated by a hybrid method of bond-switching Monte Carlo and molecular dynamics simulation. As-prepared ion implanted amorphous silicon can be adequately modeled using a structure generated from amorphization via ion bombardement using energetic recoils. Preparation methods which narrowly avoid crystallization such as experimental pressure-induced amorphization or simulated melt-quenching result in inhomogeneous structures that contain regions with significant variations in atomic ordering. Ad hoc simulated structures containing small (1 nm) diamond cubic crystal inclusions were found to possess relatively high bond-angle deviations and low dihedral angle deviations, a trend that could not be reconciled with any experimental material.

36 MATERIALS SCIENCE↗
NASA NTRS1998

CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

The main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) cubic MM /(N*m), respectively. Carbon- and nitrogen-ion-implanted, fine-grain, chemical-vapor-deposited (CVD) diamond and diamondlike carbon (DLC) ion beam deposited on fine-grain CVD diamond met the criteria regardless of environment (vacuum, nitrogen, and air).

Miyoshi, Kazuhisa↗
DOE OSTI2018

Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals

The study of high-dose carbon-ion implantation without post-process annealing reveals significant modification of the morphology, surface-layer phase composition, and field-emission properties of silicon wafers. The effect of the electrical conductivity type on the evolution of the silicon-crystal surface morphology, upon a variation in the irradiation dose, and a high content of diamond-like phases in the region of microprotrusions at the maximum dose regardless of the electrical conductivity type are found. It is demonstrated that the high-dose implantation of carbon in silicon wafers with a pre-structured surface increases the maximum density of field-emission currents by more than two orders of magnitude.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal activation of low-density Ga implanted in Ge

The nuclear spins of low-density implanted Ga atoms in Ge are interesting candidates for solid state-based qubits. To date, activation studies of implanted Ga in Ge have focused on high densities. Here, we extend activation studies into the low-density regime. We use spreading resistance profiling and secondary ion mass spectrometry to derive electrical activation of Ga ions implanted into Ge as a function of the rapid thermal anneal temperature and implant density. We show that for our implant conditions, the activation is best for anneal temperatures between 400 and 650 °C with a maximum activation of 69% at the highest fluence. Below 400 °C, remaining implant damage results in defects that act as superfluous carriers, and above 650 °C, surface roughening and loss of Ga ions are observed. The activation increased monotonically from 10% to 69% as the implant fluence increased from 6×1010 to 6×1012 cm−2. The results provide thermal anneal conditions to be used for initial studies of using low-density Ga atoms in Ge as nuclear spin qubits.

Foster, Natalie D. (ORCID:0000000235712054)↗
DOE OSTI2016

Effect of the order of He{sup +} and H{sup +} ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers and fabricate silicon on insulator wafers for the microelectronic industry. The synergy between the two implants which is reflected through the dramatic reduction of the total fluence needed to fracture silicon has been reported to be strongly influenced by the implantation order. Contradictory conclusions on the mechanisms involved in the formation and thermal evolution of defects and complexes have been drawn. In this work, we have experimentally studied in detail the characteristics of Si samples co-implanted with He and H, comparing the defects which are formed following each implantation and after annealing. We show that the second implant always ballistically destroys the stable defects and complexes formed after the first implant and that the redistribution of these point defects among new complexes drives the final difference observed in the samples after annealing. When H is implanted first, He precipitates in the form of nano-bubbles and agglomerates within H-related platelets and nano-cracks. When He is implanted first, the whole He fluence is ultimately used to pressurize H-related platelets which quickly evolve into micro-cracks and surface blisters. We provide detailed scenarios describing the atomic mechanisms involved during and after co-implantation and annealing which well-explain our results and the reasons for the apparent contradictions reported at the state of the art.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effects of nitrogen-related defects on visible light photocatalytic response in N{sup +} implanted TiO{sub 2}: A first-principles study

It was found that the visible-light responsiveness of a nitrogen ion-implanted TiO{sub 2} photocatalyst was attributable to the predominant chemical states of nitrogen, depending on the local nitrogen concentration near the surface. In the present study, we examined the effects of conceivable nitrogen-related defects on the visible light responsiveness, based on electronic structures calculated from first principles. Possible chemical states were proposed by comparing previously reported experiments with the present theoretical N-K X-ray absorption spectra. The theoretically predicted visible light absorption spectra and carrier trap states due to the bandgap states associated with the defects well explained the relationship between the catalytic reactivity and the proposed chemical states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗