Search NASA⌕ Search

SEARCH · Search NASA

Results for “InP”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Thermodynamic and Dynamic Aspects of Ice Nucleation

It is known that ice nucleating particles (INP) immersed within supercooled droplets promote the formation of ice. Common theoretical models used to represent this process assume that the immersed particle lowers the work of ice nucleation without significantly affecting the dynamics of water in the vicinity of the particle. This is contrary to evidence showing that immersed surfaces significantly affect the viscosity and diffusivity of vicinal water. To study how this may affect ice formation this work introduces a model linking the ice nucleation rate to the modification of the dynamics and thermodynamics of vicinal water by immersed particles. It is shown that INP that significantly reduce the work of ice nucleation also pose strong limitations to the growth of the nascent ice germs. This leads to the onset of a new ice nucleation regime, called spinodal ice nucleation, where the dynamics of ice germ growth instead of the ice germ size determines the nucleation rate. Nucleation in this regime is characterized by an enhanced sensitivity to particle area and cooling rate. Comparison of the predicted ice nucleation rate against experimental measurements for a diverse set of species relevant to cloud formation suggests that spinodal ice nucleation may be common in nature.

Barahona, Donifan↗
DOE OSTI2012

Near-infrared photodetector with reduced dark current

A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

InAlAs photovoltaic cell design for high device efficiency

This study presents a new design for a single-junction InAlAs solar cell, which reduces parasitic absorption losses from the low band-gap contact layer while maintaining a functional window layer by integrating a selective etch stop. The etch stop is then removed prior to depositing an anti-reflective coating. The final cell had a 17.9% efficiency under 1-sun AM1.5 with an anti-reflective coating. Minority carrier diffusion lengths were extracted from external quantum efficiency data using physics-based device simulation software yielding 170 nm in the n-type emitter and 4.6 um in the p-type base, which is more than four times the diffusion length previously reported for a p-type InAlAs base. In conclusion, this report represents significant progress towards a high-performance InAlAs top cell for a triple-junction design lattice-matched to InP.

14 SOLAR ENERGY↗
DOE OSTI2015

Optically enhanced photon recycling in mechanically stacked multijunction solar cells

Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector. The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m 2 and ~ 42% under the direct spectrum at ~100 suns. As a result, eliminating the series resistance is the key challenge for further improving the concentrator cells.

14 SOLAR ENERGY↗
NASA NTRS1998

A 640 GHz Planar-Diode Fundamental Mixer/Receiver

The design and performance of a 640 GHz solid-state receiver using a fundamental planar-Schottky-diode mixer, InP Gunn diode oscillator, whisker-contacted Schottky-varactor-diode sextupler and folded-Fabry-Perot diplexer are reported.

oscillator↗
NASA NTRS2005

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

coplanar waveguides↗
NASA NTRS2012

W-band Heterodyne Receiver Module with 27 K Noise Temperature

We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using 35nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27-45 K over the frequency band of 75-111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80-110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.

heterodyne module↗
NASA NTRS2013

A 75-116-Ghz LNA with 23-K Noise Temperature at 108 Ghz

In this paper we present the design and measurement results, both on-wafer and in package, of an ultra-low-noise and wideband monolithic microwave integrated circuit (MMIC) amplifier in the frequency range of 75 to 116 GHz. The three-stage amplifier packaged in a WR10 waveguide housing and fabricated using a 35-nm InP HEMT technology achieves a record noise temperature of 23 K at 108 GHz when cryogenically cooled to 27 K. The measured gain is 22 to 27 dB for frequency range of 75 to 116 GHz. Furthermore, the amplifier utilizes four finger devices with total gate width of 60 um resulting for improved linearity.

monolithic microwave integrated circuit (MMIC)↗
NASA NTRS2011

High Frequency PIN-Diode Switches for Radiometer Applications

Internally calibrated radiometers are needed for ocean topography and other missions. Typically internal calibration is achieved with Dicke switching as one of the techniques. We have developed high frequency single-pole double-throw (SPDT) switches in the form of monolithic microwave integrated circuits (MMIC) that can be easily integrated into Dicke switched radiometers that utilize microstrip technology. In particular, the switches we developed can be used for a radiometer such as the one proposed for the Surface Water and Ocean Topography (SWOT) Satellite Mission whose three channels at 92, 130, and 166 GHz would allow for wet-tropospheric path delay correction near coastal zones and over land. This feat is not possible with the current Jason-class radiometers due to their lower frequency signal measurement and thus lower resolution. The MMIC chips were fabricated at NGST using their InP PIN diode process and measured at JPL using high frequency test equipment. Measurement and simulation results will be presented.

PIN-diode↗
NASA NTRS2016

Miniature Packaging Concept for LNAs in the 200-300 GHz Range

In this work, we describe new miniaturized low noise amplifier modules which we developed for incorporation in small-scale satellites or Cubesats, and which exhibit similar or better performance compared to previously reported LNAs in the literature. We have targeted the WR4 (170-260 GHz) and WR3 (220-325 GHz) waveguide bands for the module development. The modules include two different methods of E-plane probes which have been developed for low loss, and stability at high frequencies. MMIC LNAs were also developed for these frequency ranges and fabricated in Northrop Grumman Corporation's 35 nm InP HEMT technology, and we have experimentally verified that noise performance is lower than reported in prior work. The best results include a miniature LNA module with 550K noise at 224 GHz, and a wideband LNA module with 15 dB gain from 230-280 GHz.

WR4↗
DOE OSTI2019

Role of Interface Chemistry in Opening New Radiative Pathways in InP/CdSe Giant Quantum Dots with Blinking-Suppressed Two-Color Emission

InP/CdSe core/thick–shell “giant” quantum dots (gQDs) that exhibit blinking–suppressed two–color excitonic emission have been synthesized and optically characterized. These type II heterostructures exhibit photoluminescence from both a charge–separated, near–infrared type II excitonic state, and a shell–localized visible–color excitonic state. Infrared emission is intrinsic to the type II QD, while visible emission can either be eliminated or enhanced through chemical modification of the InP surface prior to CdSe shell growth. Single–QD photoluminescence measurements confirm that the dual color emission is from individual nanocrystals. Here, the probability of observing dual emission from individual QDs and the extent of blinking suppression increases with shell thickness. Visible emission can be stabilized by the addition of a second shell of CdS, where the resulting InP/CdSe/CdS core/shell/shell nanocrystals afford the strongest blinking suppression, determined by analysis of the Mandel Q parameter. Transient absorption spectroscopy verifies that dual emission arises when hole relaxation from the shell to the core is impeded, possibly as a result of enhanced interfacial hole trapping at F – or O 2– defect sites. Electron–hole recombination in the shell then competes with slower type II recombination, providing a different mechanism for breaking Kasha's rule and allowing two colors of light to be emitted from one nanostructure.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices

Models based on continuum elasticity theory are discussed to calculate the necessary thickness of a strain compensation (SC) layer for a superlattice (SL) of strained quantum wells (QW) or quantum dots (QD). These models are then expanded to cover material systems (substrates, QW or QD, and SC) composed of AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, or InSb, as well as the ternary, quaternary, and higher order material alloys possible in the Al/Ga/In/P/As/Sb systems. SC thickness calculation methods were compared against dynamical scattering simulations and experimental X-ray diffraction measurements of the InAs/GaP/GaAs QD/SC/Substrate superlattices of varying SC thickness. Based on the reduced (but not eliminated) strain present, a further modified strain compensation thickness is calculated to maximize the number of SL repeat units before the onset of misfit dislocations is also calculated. In conclusion, these models have been assembled into a free application on nanoHUB for use by the community.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Surface Conversion of Single-Crystal Bi 2 Se 3 to β-In 2 Se 3

In this work, we demonstrate that the surface layers of single-crystal layered-2D Bi 2 Se 3 can be converted to layered-2D rhombohedral ß-In 2 Se 3 by annealing under a trimethylindium (TMIn) flux. Samples were prepared in a metalorganic chemical vapor deposition (MOCVD) chamber, then transferred under vacuum to a surface analysis chamber for analysis with low-energy electron diffraction (LEED) and Auger electron spectroscopy. Additional ex situ characterization included x-ray diffraction, transmission-electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS) elemental mapping, and Raman spectroscopy. The resulting single-crystal ß-In 2 Se 3 adopts the rhombohedral crystal structure (space group R-3m) and orientation of the underlying Bi 2 Se 3 , and the excess Bi atoms generated by this process create an underlying region of Bi-rich Bi x Se y . Due to the difference in bandgap between Bi 2 Se 3 and In 2 Se 3 , this conversion reaction presents a pathway to lateral heterojunctions if only selected regions are converted by masking the surface to spatially define the TMIn exposure. The conversion may also have implications for heteroepitaxy, because the in-plane lattice constants of Bi 2 Se 3 and In 2 Se 3 (0001) surfaces match those of InP and GaAs (111), respectively, and the natural cleavage planes of a layered-2D crystal facilitate substrate removal and reuse.

14 SOLAR ENERGY↗
DOE OSTI2012

Carbon molecular beam epitaxy on various semiconductor substrates

Direct graphene growth on semiconductor substrates is an important goal for successful integration of graphene with the existing semiconductor technology. We test the feasibility of this goal by using molecular beam epitaxy on various semiconductor substrates: group IV (Si, SiC), group III–V (GaAs, GaN, InP), and group II–VI (ZnSe, ZnO). Graphitic carbon has been formed on most substrates except Si. In general, the crystallinities of carbon layers are better on substrates of hexagonal symmetry than those on cubic substrates. The flatness of graphitic carbon grown by molecular beam epitaxy is noticeable, which may help the integration with semiconductor structures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Comparison of carrier localization effects between InAs quantum dashes and quantum dots in a DWELL (dashes- or dots-in-a-well) configuration

The optical properties of InAs quantum dashes (QDashes) grown on InP and InAs quantum dots (QDots) grown on GaAs in a dashes- or dots-in-a-well (DWELL) configuration are comparatively investigated using temperature-dependent photoluminescence (PL) measurements. The trends in PL characteristics such as exciton energy, spectral bandwidth and integrated intensity with respect to temperature are found to be distinctly dissimilar between the two systems. A rate-equation model involving exciton recombination and thermal transfer in a localized-state ensemble is used to quantitively interpret the experimental data. The results of this study suggest that QDashes in this configuration exhibit PL properties more consistent with a lower degree of carrier localization compared to QDots. A preliminary structural analysis highlighting the shape/size differences between the two nanostructures is also presented.

carrier localization↗
DOE OSTI2021

Extremely Slow Trap-Mediated Hole Relaxation in Room-Temperature InP/ZnSe/ZnS Quantum Dots

Time-resolved photoluminescence (PL) and transient absorption (TA) spectroscopy have been used to elucidate the hole relaxation dynamics in high-quality InP/ZnSe/ZnS quantum dots (QDs) at room temperature. In QDs having an In/P ratio close to 1:1, hole cooling is fast compared to the ~40 ps time-correlated photon-counting instrument response. However, in QDs that luminesce at wavelengths greater than around 600 nm and have excess indium, a significant fraction of the PL exhibits a slower rise time. In this case, the PL rises over a range of timescales varying from close to the instrument response to approximately 300–400 ps. The time constant of the slowest component increases with increasing InP core size and the fraction of the PL that has the slow rise time increases with excess indium in the particle. In all cases, a slow rise time and any spectral evolution on that timescale are absent in the TA results, indicating that the slow dynamics may be assigned to relaxation in the valence band. QDs emitting at wavelengths below 560 nm show very different dynamics, exhibiting a barely detectable <50 ps rise time. Based on these results and measured elemental compositions, the slow hole relaxation is assigned to the transient population of indium-based traps in the ZnSe shell that are above the valence band edge only for the larger, red-emitting QDs. Here, the relative trap to band edge relaxation rates can be understood in terms of effective mass approximation hole wave function calculations, which show that the relaxation rate is largely determined by the extent to which the hole wave function in the lowest exciton penetrates into the ZnSe shell, overlapping the trapped-hole wave functions.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Resonance Raman Study of Shell Morphology in InP/ZnSe/ZnS Core/Shell/Shell Nanocrystals

Resonance Raman spectra and absolute cross sections of InP/ZnSe/ZnS core/shell/shell nanocrystals have been obtained at excitation wavelengths of 501.7, 457.9, and 410 nm. Eight different structures having nearly the same lowest excitonic absorption wavelength but significantly different stoichiometries are compared. The Raman spectra show phonon features attributable to both the InP core and the ZnSe shell. The largest differences among the structures are seen in the ZnSe phonon region by using excitation at 457.9 nm, on the low-energy edge of the absorption features having significant contributions from the ZnSe shell. Here, structures that are nearly stoichiometric (In:P ratio ≈1.0) show a sharp, strongly polarized peak near the bulk ZnSe phonon frequency (~250 cm –1 ) and a weak lower-frequency shoulder with a higher depolarization ratio. Structures having excess indium show a stronger low-frequency shoulder near 225 cm –1 and lower integrated Raman intensities throughout the ZnSe phonon region. These changes are attributed to the presence of indium atoms in the ZnSe shell. Furthermore, these results support a previous assignment of a slow rise component in the time-resolved photoluminescence spectra of nonstoichiometric structures to transient trapping of holes at indium defects in the shell.

77 NANOSCIENCE AND NANOTECHNOLOGY↗