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At least 739 records · Page 41

Oriented porous LLZO 3D structures obtained by freeze casting for battery applications

All solid-state lithium batteries are, potentially, higher energy density and safer alternatives to conventional lithium-ion batteries (LIBs). These are particularly attractive characteristics for large-scale applications such as electric vehicles and grid energy storage systems. However, the thin film deposition techniques used to make current devices are not readily scalable, and result in low areal capacities, which translate to low practical energy densities. To overcome these deficiencies, it is necessary to design thicker electrodes similar to what are used in LIBs (30–100 μm), in which the active material is composited with an ionic conductor and an electronically conducting additive, to overcome transport limitations. In this paper, we propose a method for making such an electrode, starting with a porous scaffold, i.e. Li 7 La 3 Zr 2 O 12 (LLZO), made by freeze casting, which is then infiltrated with the active material LiNi 0.6 Mn 0.2 Co 0.2 O 2 (NMC-622) and other components. The freeze casting technique results in the formation of oriented channels with low tortuosity, which run roughly parallel to the direction of the current. The scaffolds were characterized with synchrotron X-ray micro-tomography for structural analysis, as well as synchrotron X-ray fluorescence to map the elemental distribution in the infiltrated composite. A hybrid half-cell was constructed and cycled as proof of principle, and it showed good stability. In addition, a bilayer structure consisting of a porous layer combined with a dense LLZO film was successfully made as a prototype of an all solid-state battery. Finally, a mathematical model was established to propose optimized scaffold structures for battery performance.

25 ENERGY STORAGE↗

Improved Stability and Cyclability of Ceramic Solid Electrolyte by Coating Polymer

Rechargeable all-solid-state lithium (Li) metal batteries show better safety and energy density compared to commercial Li-ion batteries using liquid electrolyte. As the key component of Li metal batteries, ceramic solid-state electrolyte has attracted great interest because of its high ion conductivity and great potential in interfacing with Li metal. Ceramic electrolyte has a more stable interface with Li metal than liquid electrolyte, but chemical reaction and Li dendrite growth at the electrolyte/Li interface are still significant, which causes device degradation and failure by cycling of Li plating and stripping. Unlike ceramic electrolyte, polymer electrolyte has a relatively stable interface with Li metal and better mechanical flexibility. Therefore, we introduced a polymer electrolyte coating to protect the ceramic electrolyte from direct contact with Li metal. The galvanotactic cycling Li plating/striping data on the devices with (without) the coating illustrates increased (decreased) overall conductivity and cyclability of the test cell by the cycling. Nanometer-scale ionic-transport imaging, based on atomic force microscopy, shows that cycling degrades the ceramic-only electrolyte by partially blocking ionic transport in areas; in contrast, cycling on the polymer-coated electrolyte improves ionic conductivity. Compared with the ceramic-only electrolyte, this novel polymer electrolyte coating on ceramic electrolyte shows less degradation when in contact with Li metal.

25 ENERGY STORAGE↗

All-solid-state supercapacitors from natural lignin-based composite film by laser direct writing

Lignin as a renewable natural resource has been the aim of numerical interest in applications ranging from pitch to porous carbon material. In this work, a facile method is reported to transform lignin into porous conductive carbon structures and interdigitated circuits for supercapacitor devices using femtosecond laser direct writing. Comparative studies revealed that the laser irradiation induced tetrahedral amorphous carbon while only graphitic carbon was obtained through pyrolysis. At the same time, the composite membrane was easily prepared to further optimize the capacities by mixing functional materials (MoS 2 ) into the lignin/polyacrylonitrile (PAN) composite polymers. A MoS2 decorated porous carbon network material could be fabricated through focused femtosecond pulsed laser irradiation of the corresponding composite membranes. The microstructure and spectroscopic features of these laser induced hybrid carbon materials have been deeply investigated. The supercapacitor based on lignin/PAN has high areal specific capacitances of 6.7 mF cm –2 (0.9 F cm –3 ) at 10 mV s –1 . Moreover, doped microsupercapacitors with MoS2 demonstrated enhanced areal capacitances up to 16 mF cm –2 (2.2 F cm –3 ) and at 10 mV s –1 , respectively. The relatively high areal capacitances indicate that the introduced method is potential for innovative manufacturing energy storage devices based on natural lignin.

36 MATERIALS SCIENCE↗

Compositionally Graded Alloy Quantum Dot Phosphors for Solid State Lighting. Final Report

To push the boundaries of efficiency and cost in solid state lighting (SSL), narrow band red emitting down conversion phosphors must be improved. These materials are critical to both the color rendering ability and optical output of phosphor converted light emitting diodes (LEDs). Improvements in these performance parameters will have a significant impact on the adoption of SSL in retail, office, and home lighting applications. Quantum Dots (QDs) are widely acknowledged as a cost-effective front-runner among developing downconverting technologies because they emit narrow band luminescence that is tunable across the visible spectrum. Current syntheses of quantum dots, however, utilize expensive and toxic reagents and often involve several time-intensive purification steps. To address this, we have introduced a novel, cost-effective synthetic scheme, whereby the final quantum dot structures can be accessed with fewer synthetic steps using a library of inexpensive, easily-synthesized precursors. With the help of automated high throughput synthesis robotics, Columbia, LBNL, and OSRAM have optimized red and amber CdS/CdSe/CdS QD architectures for SSL. QDs with improved shelling layers have been identified that meet the industry state of the art performance on chip under high humidity accelerated aging tests. This is remarkable considering the time frame of this project compared to the time and resources allocated for the development of the industrial standard. Furthermore, although particle stability to optical charging is often stressed in improving QLED performance, we have identified effective ZnS particle over-coating as the most important factor determining particle survivability and device performance in down-converting LEDs.

36 MATERIALS SCIENCE↗

Non-Markovian dynamics of a superconducting qubit in a phononic bandgap

Reducing decoherence in quantum computers rapidly decreases the overhead needed to construct a logical qubit from physical qubits. In solid-state systems, a class of defects known as two-level systems is a major source of decoherence. Currently, superconducting qubit experiments reduce dissipation due to the two-level systems by using large device dimensions. However, this approach only provides partial protection and results in a trade-off between qubit size and dissipation. In this work, we instead engineer the interactions between a qubit and the surrounding two-level systems using phononics. We fabricate a superconducting qubit on a phononic-bandgap metamaterial that suppresses phonon emission mediated by the two-level systems. The phonon-engineered bath of two-level systems shows increased lifetime and affects the thermalization dynamics of the qubit. Within the phononic bandgap, we observe the emergence of a non-Markovian qubit behaviour. Further, combined with qubit miniaturization, our approach could substantially extend the qubit relaxation times.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Microgan electron cyclotron resonance ion source in a Van de Graaff accelerator terminal

The Van de Graaff accelerator at IRMM works since many years providing proton, deuteron, and helium beams for nuclear data measurements. The original ion source was of RF type with quartz bottle. This kind of source, as well known, needs regular maintenance for which the accelerator tank must be completely opened. The heavy usage at high currents of the IRMM accelerator necessitated an opening about once every month. In 2010, the full permanent magnet Microgan electron cyclotron resonance (ECR) ion source from PANTECHNIK was installed into a new terminal platform together with a solid state amplifier of 50 W, a dedicated dosing system for 4 gases (with respective gas bottles H{sub 2}, D{sub 2}, He, and Ar), and a set of dedicated power supplies and electronic devices for the remote tuning of the source. The new system shows a very stable behaviour of the produced beam allowing running the Van de Graaf without maintenance for several months. This contribution will describe the full installed system in details (working at high pressure in the terminal, spark effects, and optic of the extraction), as well as beam results in dc or pulsed mode.

43 PARTICLE ACCELERATORS↗

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗

Thermal regulation of tightly packed solid-state photodetectors in a 1 mm{sup 3} resolution clinical PET system

Purpose: Silicon photodetectors are of significant interest for use in positron emission tomography (PET) systems due to their compact size, insensitivity to magnetic fields, and high quantum efficiency. However, one of their main disadvantages is fluctuations in temperature cause strong shifts in gain of the devices. PET system designs with high photodetector density suffer both increased thermal density and constrained options for thermally regulating the devices. This paper proposes a method of thermally regulating densely packed silicon photodetectors in the context of a 1 mm{sup 3} resolution, high-sensitivity PET camera dedicated to breast imaging. Methods: The PET camera under construction consists of 2304 units, each containing two 8 × 8 arrays of 1 mm{sup 3} LYSO crystals coupled to two position sensitive avalanche photodiodes (PSAPD). A subsection of the proposed camera with 512 PSAPDs has been constructed. The proposed thermal regulation design uses water-cooled heat sinks, thermoelectric elements, and thermistors to measure and regulate the temperature of the PSAPDs in a novel manner. Active cooling elements, placed at the edge of the detector stack due to limited access, are controlled based on collective leakage current and temperature measurements in order to keep all the PSAPDs at a consistent temperature. This thermal regulation design is characterized for the temperature profile across the camera and for the time required for cooling changes to propagate across the camera. These properties guide the implementation of a software-based, cascaded proportional-integral-derivative control loop that controls the current through the Peltier elements by monitoring thermistor temperature and leakage current. The stability of leakage current, temperature within the system using this control loop is tested over a period of 14 h. The energy resolution is then measured over a period of 8.66 h. Finally, the consistency of PSAPD gain between independent operations of the camera over 10 days is tested. Results: The PET camera maintains a temperature of 18.00 ± 0.05 °C over the course of 12 h while the ambient temperature varied 0.61 °C, from 22.83 to 23.44 °C. The 511 keV photopeak energy resolution over a period of 8.66 h is measured to be 11.3% FWHM with a maximum photopeak fluctuation of 4 keV. Between measurements of PSAPD gain separated by at least 2 day, the maximum photopeak shift was 6 keV. Conclusions: The proposed thermal regulation scheme for tightly packed silicon photodetectors provides for stable operation of the constructed subsection of a PET camera over long durations of time. The energy resolution of the system is not degraded despite shifts in ambient temperature and photodetector heat generation. The thermal regulation scheme also provides a consistent operating environment between separate runs of the camera over different days. Inter-run consistency allows for reuse of system calibration parameters from study to study, reducing the time required to calibrate the system and hence to obtain a reconstructed image.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Current-Source Solid-State DC Transformer Integrating LVDC Microgrid, Energy Storage, and Renewable Energy Into MVDC Grid

Solid-state DC transformer to integrate low-voltage DC (LVDC) microgrid, wind turbine (WT) generator, photovoltaic (PV), and energy storage (ES) into medium-voltage (MV) direct-current (MVDC) distribution grids is attractive. This paper proposes current-source DC solid-state transformer (SST) for MVDC collection system in WT, PV, and ES farms or as an interface between the MVDC grid and the LVDC microgrid. Compared to conventional current-source converter (CSC) based SSTs, a switch reduction scheme on reverse-blocking device bridges is proposed to reduce device count and the number of devices on the DC-link current path. Importantly, the proposed switch reduction scheme is generic and can be applied to the DC ports of DC-AC, AC-DC, or DC-DC hard-switching or soft-switching CSC-based SSTs. Based on this scheme, the proposed current-source DC SSTs are derived, which have reduced electrolytic-capacitor-less DC-link. The proposed DC SSTs also achieve single-stage isolated DC-DC or DC-AC conversion, full-range zero-voltage switching (ZVS) for main switches, zero-current switching (ZCS) for resonant switches, and controlled dv/dt. The proposed DC SSTs, operating principles, predictive control method, the ZVS, and the controlled dv/dt under voltage buck-boost ranges are verified with MV simulations and an experimental prototype based on SiC MOSFETs, diodes, and a nanocrystalline transformer.

14 SOLAR ENERGY↗

Observation of single-defect memristor in an MoS2 atomic sheet

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide and hexagonal boron nitride sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS 2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Critical size for the generation of misfit dislocations and their effects on electronic properties in GaAs nanosheets on Si substrate

While nanowires and nanosheets (NSs) grown on lattice-mismatched substrates have a number of promising technological applications such as solar cells, generation of misfit dislocations (MFDs) at their interfaces is a major concern for the efficiency of these devices. Here, combined molecular-dynamics and quantum-mechanical simulations are used to study MFDs at the interface between a GaAs NS and a Si substrate. Simulation results show the existence of a critical NS thickness, below which NSs are grown free of MFDs. The calculated critical thickness value is consistent with available experimental observations. Charge transfer at the MFD core is found to modify the electronic band profile at the GaAs/Si interface significantly. These effects should have profound impacts on the efficiency of lattice-mismatched NS devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Development and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed for highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.

36 MATERIALS SCIENCE↗

PRD3000: A novel Personnel Radiation Detector with Radiation Exposure Monitoring

PRD3000{sup TM} is a novel Personal Radiation Detector (PRD) with personnel radiation dose exposure monitoring. It is intended for First Responders, Law Enforcement, Customs Inspectors protecting critical infrastructures for detecting unexpected radioactive sources, who also need real time Hp(10) dose equivalent information. Traditional PRD devices use scintillator materials instrumented through either a photomultiplier tube or a photodiode photodetector. While the former is bulky and sensitive to magnetic fields, the latter has to compromise radiation sensitivity and energy threshold given its current noise per unit of photo-detection surface. Recently, solid state photodetectors (SiPM), based on arrays of Geiger operated diodes, have emerged as a scalable digital photodetector for photon counting. Their strong breakdown voltage temperature dependence (on the order of tens of milli-volts per K) has however limited their use for portable instruments where strong temperature gradients can be experienced, and limited power is available to temperature stabilize. The PRD3000 is based on the industry standard DMC3000 active dosimeter that complies with IEC 61526 Ed. 3 and ANSI 42.20 for direct reading personal dose equivalent meters and active personnel radiation monitors. An extension module is based on a CsI(Tl) scintillator readout by a temperature compensated SiPM. Preliminary nuclear tests combined with a measured continuous operation in excess of 240 hours from a single AAA battery cell indicate that the PRD3000 complies with the IEC 62401 Ed.2 and ANSI 42.32 without sacrificing battery life time. We present a summary of the device test results, starting with performance stability over a temperature range of - 20 deg. C to 50 deg. C, false alarm rates and dynamic response time. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Texture in thin film silicides and germanides: A review

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

36 MATERIALS SCIENCE↗

An efficient construction of nano-interfaces for excellent coking tolerance of cermet anodes

Solid oxide fuel cells (SOFCs) are promising energy conversion devices for the effective and convenient utilization of hydrocarbons (for example, methane) to electricity. However, the development of direct methane SOFCs is primarily hindered by the poor coking tolerance of the state-of-the-art Ni-based cermet anodes. Herein, we efficiently construct nano-interfaces in the anode by infiltrating a Ni 0.6 Y 0.064 Zr 0.336 O 2-δ (NYZ) catalyst onto the traditional Ni-based cermet anode to effectively enhance the coking tolerance. After being reduced in H 2 , Ni and Y 0.16 Zr 0.84 O 2-δ (YSZ) nanoparticles (NPs) are in situ formed on the surface of the Ni-YSZ substrate. The roughened anode demonstrates significantly improved fuel oxidation activity and coking tolerance, due likely to the formation of nano-interfaces. Specifically, when applied in the Ni-YSZ-based anode-supported SOFCs, a high peak power density of 1.785 W cm –2 and a stable operation of ~ 240 h with no observable degradation is achieved at 750 °C in nearly dry methane (3% H 2 O). Finally, a density functional theory study suggests that the excellent coking tolerance is attributed to the formation of OH species on Ni/YSZ nano-interfaces, which would further interact with intermediate carbon species to generate COH intermediates.

30 DIRECT ENERGY CONVERSION↗

Influence of Intermolecular Interactions and Axial Ligands on the Absorption Spectra of Metallophthalocyanines in Solid-State Matrices

The influences of the structure of the anionic axial ligands in Group-IIIA and -IVA metal–phthalocyanine complexes and intermolecular interactions on the absorption spectra of the macroheterocycles in solutions, an organic polymer, and nanoporous silicate gel matrices were studied. It was shown that anionic Cl – ligands of the central metal ion were effectively substituted for hydroxyls (OH –) during the synthesis and purification of the metallophthalocyanines. Studies of solid-state nanoporous samples obtained by the sol-gel method showed that activator hydroxoaluminumphthalocyanine molecules were incorporated as monomers into the organo-inorganic silicate material. The optically homogeneous luminescent xerogel could be used in optical devices for the wavelength range adjacent to the near-IR region.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effect of the chlorine substitution position of the end-group on intermolecular interactions and photovoltaic performance of small molecule acceptors

The structure–property relationships of small molecular acceptors (SMAs) are a key issue in the molecular design of new-generation acceptor materials for further improving the device efficiencies of polymer solar cells (PSCs). Herein, three couples of SMA isomers were synthesized, based on three central fused ring units and two 1,1-dicyanomethylene-3-indanone (IC) isomer electron-withdrawing terminal units with chlorine substitutions in different positions of its benzene ring: Cl-1 with chlorine on the same side as a C=O group of IC and Cl-2 with chlorine on the same side as the CN groups of IC. Through systematical investigation, we found that the chlorine substitution position of the terminal groups has a regular and significant influence on the molecular packing and photovoltaic performance of the SMAs. The molecular packing behavior of the SMAs is closely related to and determined by the configuration of their terminal groups, no matter which central fused ring of the SMAs is used. In particular, the Cl-1-based SMAs possess a stronger crystallinity with long range ordering packing in their molecular plane direction, while the more abundant and stereoscopic π–π intermolecular interaction in the Cl-2-based SMAs promotes the molecules to form three-dimensional charge transporting channels and leads to their red-shifted absorption and higher electron mobilities. Therefore, the Cl-2-based PSCs exhibit a higher power conversion efficiency (PCE) compared to that of the Cl-1-based devices, and the best PCE of a Cl-2 SMA-based PSC reached 16.42%. These results highlight the importance of the investigation of intermolecular interactions, packing and the arrangement of the SMAs in the solid-state, which may provide direct insights for exploring the relationship between the molecular structure and property of the photovoltaic materials. Moreover, we envision that if fragments such as end groups or side chains with more diverse molecular interactions are added into the design and the subsequent synthesis of the SMAs, this may be beneficial to promoting molecular π–π accumulation and further improving the molecular order, forming suitable molecular packing and morphology in the resulting blend films, and finally affecting the efficiency of the PSCs.

14 SOLAR ENERGY↗