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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Exploring a wider range of Mg–Ca–Zn metallic glass as biocompatible alloys using combinatorial sputtering

In order to bypass the limitation of bulk metallic glasses fabrication, we synthesized thin film metallic glasses to study the corrosion characteristics of a wide atomic% composition range, Mg(35.9-63%)Ca(4.1-21%)Zn(17.9-58.3%), in simulated body fluid. We highlight a clear relationship between Zn content and corrosion current such that Zn-medium metallic glasses exhibit minimum corrosion. In addition, we found higher Zn content leads to a poor in vitro cell viability. Finally, these results showcase the benefit of evaluating a larger alloy compositional space to probe the limits of corrosion resistance and prescreen for biocompatible applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Optical constants of magnetron sputtered Pt thin films with improved accuracy in the N- and O-electronic shell absorption regions

We introduce an experimental, self-consistent determination of the optical constants (refractive index) of Pt using a combination of photoabsorption and reflectance data in the photon energy range 25–778 eV, which includes the N- and O-shell electronic absorption edges of Pt. We compare our new experimental values with Pt optical constant data sets from the literature. Our Pt optical constant values demonstrate highly resolved absorption-edge fine structure around the O 2,3 and N 6,7 edges in both the absorptive and dispersive portions of the refractive index, which were missing in the earlier literature.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Twin density and twin thickness evolution in sputtered Al–Mg alloys

Twinned Al–Mg alloys have been reported. However, the role of Mg solute in facilitating the formation of growth twins remains unclear. By using a precession-assisted crystal orientation mapping technique (PACOM) coupled with transmission electron microscopy (known as ASTAR), we examined the evolution of twin boundaries in Al, Al–1Mg, and Al–2.2Mg (at. %) films. The twinned grain fraction elevates with increasing film thickness until it reaches a peak when the film thickness is 120–160 nm. The Al–Mg alloys exhibited greater twinned grain fractions than pure Al. To investigate the fluctuation of twinned grain fraction, two types of twin boundaries were classified including intergranular and intragranular twins. The initial increase in twin density is attributed to the impingement of twinned grains during island coalescence and the twinned grains are more likely to survive during the grain growth process. Whereas the decrease in twinned grain fraction in thicker films is related to the removal of intragranular twins, and a lack of formation mechanisms of new twins.

Physics↗
DOE OSTI2024

Optical constants of magnetron sputtered aluminum in the range 17–1300 eV with improved accuracy and ultrahigh resolution in the L absorption edge region

This work determines a new set of EUV/x-ray optical constants for aluminum (Al), one of the most important materials in science and technology. Absolute photoabsorption (transmittance) measurements in the 17–1300 eV spectral range were performed on freestanding Al films protected by carbon (C) layers, to prevent oxidation. The dispersive portion of the refractive index was obtained via the Kramers–Kronig transformation. Our data provide significant improvements in accuracy compared to previously tabulated values and reveal fine structure in the Al L 1 and L 2,3 regions, with photon energy step sizes as small as 0.02 eV. The implications of this work in the successful realization of EUV/x-ray instruments and in the validation of atomic and molecular physics models are also discussed.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗
DOE OSTI2022

Quality Control Metrics to Assess MoS 2 Sputtered Films for Tribological Applications [Slides]

Easily measured metrics that could assign quantifiable values to coating batches for quality control have started to be developed. High-density is an attribute of quality films. Increased density results in harder, more wear resistant coatings in inert and humid environments. Denser films are more resistant to oxidation from aging, limiting the severity and depth of oxide into the coating. Future work includes using metrics for quality. The next step is to develop in house deposition capabilities to develop process-structure relationships.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗