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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Structure and Voltage Recovery Driven by Defects Elimination in Li-Rich Layered Oxide Cathode Materials

Lithium-ion batteries (LIBs) are ubiquitous in a wide range of technologies, including cell phones, electric vehicles, and energy grid, and are indispensable in the transition toward sustainable energy technology. The battery performance is inherently connected to the capability of lithium ions to reversibly intercalate with the electrodes. The capacity of classical layered transition metal (TM) oxides, the primary commercial cathode materials, is limited to cationic redox activity. Anionic redox has thus emerged as a new paradigm for designing novel cathodes for next generation LIBs. It is recently confirmed oxygen redox in lithium-rich layered oxides (LRLO) with composition xLi 2 MnO 3 ∙(1-x)LiTMO 2 , which enables this group of materials exhibit reversible capacities exceeding 280 mAh g -1 . Unfortunately, this material undergoes voltage fading and instability that is rooted in irreversible structural transformation in terms of defects formation including lithium and oxygen vacancies, lithium tetrahedron, TM migration, edge dislocations, stacking fault, and local strain. Modification methods including morphology control, composition gradient, surface treatment, foreign elements doping, etc., have been proposed in the literatures to mitigate the defects formation and maintain the structure reversibility. Despite their improvement, the intrinsic voltage fading is still inevitable and remains a challenge that will require considerable effort to overcome. In this work, we demonstrate a path to recover the layer structure and working voltage through high-temperature annealing. The treatment at high temperature recovers the local Li-excess environments around oxygen, oxygen stacking sequence, and eliminates microstrain associated with different defects. As a result, the voltage profile once more shows plateau region during charge and the average discharge voltage is restored of the cycled cathode after heat treatment. Both theoretical calculations and experimental characterizations illustrate the mechanisms underlying the heating induced recovery. The structure metastability and defects removal are decisive in structure and voltage recovery of LRLO cathode material.

Zhang, Minghao↗
DOE OSTI2022

3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells

InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core–shell geometry in principle allows for a greater tuning of composition and emission, especially farther into the infrared, the practical limits of elastic strain accommodation in quantum wells on multifaceted nanowires have not been established. One barrier to progress is the difficulty of directly comparing the emission characteristics and the precise microstructure of a single nanowire. Here, in this study, we report an approach to correlating quantum well morphology, strain, defects, and emission to understand the limits of elastic strain accommodation in nanowire quantum wells specific to their geometry. We realize full 3D Bragg coherent diffraction imaging (BCDI) of intact quantum wells on vertically oriented epitaxial nanowires, which enables direct correlation with single-nanowire photoluminescence. By growing In 0.2 Ga 0.8 As quantum wells of distinct thicknesses on different facets of the same nanowire, we identified the critical thickness at which defects are nucleated. A correlation with a traditional transmission electron microscopy analysis confirms that BCDI can image the extended structure of defects. Finite element simulations of electron and hole states explain the emission characteristics arising from strained and partially relaxed regions. This approach, imaging the 3D strain and microstructure of intact nanowire core–shell structures with application-relevant dimensions, can aid the development of predictive models that enable the design of new compact infrared emitters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Atomistic determination of the surface structure of Cu 2 O(111): experiment and theory

Cuprous oxide (Cu 2 O) is a promising catalyst for several important reactions. However, the atomic structures of defective Cu 2 O surfaces, which critically affect the catalytic properties both thermodynamically and kinetically, are not unambiguously characterized. High-resolution scanning tunneling microscopy (STM), combined with density functional theory (DFT) calculations and STM simulations, has been used to determine the atomic structure of the (111) surface of a Cu 2 O bulk crystal. The single crystal surface, processed by ultrahigh vacuum cleaning and oxygen annealing, shows a (1 × 1) periodicity in the low-energy electron diffraction pattern. The pristine (defect-free) Cu 2 O(111) surface exhibits a lattice of protrusions with hexagonal symmetry under STM, which is attributed to the dangling bonds of the coordinatively unsaturated copper (Cu U ) atoms on the surface. Two types of surface atomic defects are also identified, including the Cu U vacancy and the oxygen-vacancy-induced local surface restructuring. The electronic structure of this surface measured by $dI/dV$ spectroscopy shows an energy band gap of ~1.6–2.1 eV. Consistent with $dI/dV$ measurements, DFT calculations identified surface states within the electronic band gap arising from the Cu ions on the surface. Our results provide a clear picture of the pristine and defective Cu 2 O(111) surface structure in addition to the formation mechanism of the reconstructed surface, paving the way toward studying the site-dependent reactivity of this surface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Entropy-defect synergy for dual luminescence mechanism in spinel: Time-resolved anti-counterfeiting and fingerprint visualization

Multimodal luminescent materials, while promising for anti-counterfeiting, often lack dynamic time-dependent responses and controllable spatial distribution, limiting their encryption capabilities in the spatiotemporal dimension. Here, this work presents a coordinated control strategy based on entropy and defect engineering, and uses a backpropagation (BP) neural network for material screening to successfully prepare spinel Mg 0.8 (Fe 0.04 Co 0.04 Ni 0.04 Cu 0.04 Zn 0.04 )Cr 2 O 4 (MgA 5 CO) phosphors with time-dependent dynamic luminescence behavior. This phosphor simultaneously activated the d-d transition luminescence (∼618 nm) derived from Co 2+ /Cr 3+ and the defect luminescence (∼398 nm) related to zinc vacancies (V Zn ) in a single-phase solid solution. The phosphor exhibits a time-dependent color evolution from pink to purple under fixed-wavelength excitation, due to the different excited-state dynamics and decay lifetimes associated with the d-d transition and defect luminescence. Structural characterization and spectral analysis confirmed the existence of V Zn and its significant role in defect luminescence process. The fluorescent and dynamic luminescent properties of entropy-based spinel oxide enable its use in advanced anti-counterfeiting applications like fingerprint recognition and color-changing dedicated anti-counterfeiting mark, showing promise in high-end and time-dynamic anti-counterfeiting fields. This research not only developed a new type of fluorescent dynamic anti-counterfeiting material, but also provided a new idea for constructing advanced optical functional materials with multiple luminescence mechanisms.

Defect project↗
DOE OSTI2022

Automated Defect Identification for Tri-structural Isotropic Fuels (AUDIT)

During the manufacture of tri-structural isotropic (TRISO)-coated nuclear fuel particles, the potential exists for the formation of internal fissure defects in the uranium oxycarbide (UCO) kernels. These fissures result in a defective fuel particle that can fracture during subsequent fuel processing. Therefore, it is necessary to detect the presence of fissured kernels in a batch to determine if the batch meets specification prior to blending with other batches and upgrading processes. Previous attempts at identifying fissures involved manual inspection of micrographs of UCO fuel kernel cross-sections. This process is tedious, time-consuming and may introduce counting errors making it a good candidate for automation. This work presents a method for the automated detection of fissures in UCO kernels. Image segmentation is used for the extraction of relevant features in the micrographs which then serve as the input to a convolutional neural network used to automatically distinguish between fissured and non-fissured kernels.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2019

Defect-Induced (Dis)Order in Relaxor Ferroelectric Thin Films

The effect of intrinsic point defects on relaxor properties of 0.68 $\mathrm{PbMg_{1/3}Nb_{2/3}O_{3}-0.32 PbTiO_{3}}$ thin films is studied across nearly 2 orders of magnitude of defect concentration via ex post facto ion bombardment. A weakening of the relaxor character is observed with increasing concentration of bombardment-induced point defects, which is hypothesized to be related to strong interactions between defect dipoles and the polarization. Finally, although more defects and structural disorder are introduced in the system as a result of ion bombardment, the special type of defects that are likely to form in these polar materials (i.e., defect dipoles) can stabilize the direction of polarization against thermal fluctuations, and in turn, weaken relaxor behavior.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Interplay between defect transport and cation spin frustration in corundum-structured oxides

Despite the fundamental importance of mass transport, there is still a lack of knowledge regarding the mechanisms in many materials. In particular, how the magnetic spin structure interacts with migrating defects is unclear. In this work, using density functional theory to examine cation interstitial transport in antiferromagnetic corundum-structured oxides, we reveal an interplay between the migration of the interstitial and the magnetic structure of the oxide. The magnetic spin configuration impacts the migration energy of the migrating defect but, critically, the defect modifies the spin configuration. Thus, the two aspects change in concert to modify one another. This has profound implications for mass transport in magnetic materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations

We employ a combination of pseudopotential and all-electron density functional calculations, to relate the structure of defects in supercells to the isomer shifts and quadrupole splittings observed in Mössbauer spectroscopy experiments. The methodology is comprehensively reviewed and applied to the technologically relevant case of iron-related defects in silicon, and to other group-IV hosts to a lesser degree. Investigated defects include interstitial and substitutional iron, iron-boron pairs, iron-vacancy, and iron-divacancy. We find that, in general, agreement between the calculations and Mössbauer data is within a 10% error bar. Nonetheless, we show that the methodology can be used to make accurate assignments, including to separate peaks of similar defects in slightly different environments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Oxygen defects in amorphous Al{sub 2}O{sub 3}: A hybrid functional study

The electronic properties of the oxygen vacancy and interstitial in amorphous Al{sub 2}O{sub 3} are studied via ab initio molecular dynamics simulations and hybrid functional calculations. Our results indicate that these defects do not occur in amorphous Al{sub 2}O{sub 3}, due to structural rearrangements which assimilate the defect structure and cause a delocalization of the associated defect levels. The imbalance of oxygen leads to a nonstoichiometric compound in which the oxygen occurs in the form of O{sup 2–} ions. Intrinsic oxygen defects are found to be unable to trap excess electrons. For low Fermi energies, the formation of peroxy linkages is found to be favored leading to the capture of holes. The relative +2/0 defect levels occur at 2.5 eV from the valence band.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

The effects of vanadium substitution on one-dimensional tunnel structures of cryptomelane: Combined TEM and DFT study

Rational design of energy storage materials requires mechanistic understanding which relies on atomic scale characterization of structure and defects. In this paper we utilize vanadium (V)-substituted one-dimensional cryptomelane as a model material to study structural features critical to electrochemical reversibility of the cathode in lithium-ion batteries. We found the substitution of manganese (Mn) atoms in the tunnel wall with V enhances structural uniformity in the parent KMn 8 O 16 material by inhibiting formation of irregular (2 × 3 and 2 × 1) manganese oxide tunnel structures. Upon lithiation, both transmission electron microscopy (TEM) and density functional theory (DFT) reveal significant structural evolution, eventually resulting in phase separation and formation of highly reduced manganese oxide. During this process, Mn 4+ accepts electrons donated by intercalated Li, while the V 4+ substituent is not electrochemically reduced but acts to stabilize the tunnel framework structure. As a result, the V substituted material shows higher operating voltage and improved electrochemical reversibility. Our results highlight the benefits of V-substitution in cryptomelane, and the significance of integrating characterization with simulation for understanding and developing design principles for lithium ion battery materials.

25 ENERGY STORAGE↗
DOE OSTI2015

How the method of synthesis governs the local and global structure of zinc aluminum layered double hydroxides

A series of zinc aluminum layered double hydroxides (ZnAl LDHs), [Zn1-xAlx (OH)2Ax,nH2O with A = NO3-, Cl- or CO3] were prepared by the urea and co-precipitation synthesis methods, which allowed for a detailed investigation on how synthesis parameters such as pH, metal ion concentration and post synthesis treatment influence the local and global structure of the LDH product. Information about sample composition, purity, defects and other structural aspects of the LDH products were obtained from powder X-ray diffraction, transmission electron microscopy, micro-Raman, and elemental analysis, as well as solid state 1H, 27Al and 67Zn NMR spectroscopy. Our results show that the urea method results in LDHs, which on the global scale are highly crystalline LDHs, whereas solid state NMR shows the different local environments indicating local disorder most likely linked to the presence of Al-rich phases. However, these Alrich phases are not detected by global range techniques, as they either defects within the LDH particles or separate phase(s) associated with LDHs. In contrast, samples prepared by coprecipitation especially synthesized under careful pH control and subsequently hydrothermal treated have high local order and good crystallinity (particle size). Our results show that both molecular level and macroscopic techniques are needed to assess the composition of LDHs, as the conventional PXRD and TEM analysis of LDHs failed to identify the many structural defects and/or amorphous phases.

Environmental Molecular Sciences Laboratory↗
DOE OSTI2022

Defect-induced electronic smectic state at the surface of nematic materials

Due to the intertwining between electronic nematic and elastic degrees of freedom, lattice defects and structural inhomogeneities commonly found in crystals can have a significant impact on the electronic properties of nematic materials. Here, we show that defects commonly present at the surface of crystals generally shift the wave-vector of the nematic instability to a non-zero value, resulting in an incommensurate electronic smectic phase. Such a smectic state onsets above the bulk nematic transition temperature and is localized near the surface of the sample. We argue that this effect may explain not only recent observations of a modulated nematic phase in iron-based superconductors, but also several previous puzzling experiments that reported signatures consistent with nematic order before the onset of a bulk structural distortion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Photoluminescence, thermoluminescence and defect centres in Y2O3 and Y2O3:Tb3+ under 100 MeV swift Ni8+ ion beam irradiation

Highlights: • XRD showed decrease of crystallite size after ion irradiated. • Electron spin resonance reveals the presence of F, F{sup +} and O{sub 2}{sup −} centres. • SHI irradiated Y{sub 2}O{sub 3}:Tb{sup 3+} exhibits purity of intense green emission and long life time. • The Tb{sup 3+} doped Y{sub 2}O{sub 3} shows a linear, greater TL efficiency, longer life time and less fading under SHI irradiation. - Abstract: Y{sub 2}O{sub 3} and Y{sub 2}O{sub 3}:Tb{sup 3+} powders, synthesized via the solution combustion method, were studied in order to determine the effect of 100 MeV swift Ni{sup 8+} ions on the photoluminescence (PL), thermoluminescence (TL) and swift ion beam induced defects. Synthesized materials were characterized by X-ray powder diffraction, electron spin resonance, PL intensity, decay measurements and TL. Cubic structures were observed in both the pristine and ion irradiated materials. The ion irradiated materials exhibited smaller crystallite sizes than that of the pristine material. PL peaks in the visible region were identified at 485, 542, 582 and 621 nm due to the {sup 5}D{sub 4}→{sup 7}F{sub 3,4,5,6} transition of Tb{sup 3+}. The PL intensity showed an increase up to 3 × 10{sup 10} ions cm{sup −2} and then a significant decrease with a further increase in the ion fluence. The recorded time resolved PL at an ion irradiated fluence of 3 × 10{sup 10} ions cm{sup −2}, exhibited an increase in the life time of the material. TL glow curves were obtained for the samples irradiated with a swift Ni{sup 8+} ion beam. These glow curves showed a peak at 518 K with a shoulder peak at 473 K and its intensity linearly increased upto a fluence of 1 × 10{sup 11} ions cm{sup −2}. Whereas, the undoped sample showed peaks at 421 and 662 K and its intensity sub-linearly increased upto a fluence of 1 × 10{sup 11} ions {sup −2}. TL efficiency values of the Y{sub 2}O{sub 3}:Tb{sup 3+} sample, irradiated by a 100 MeV Ni{sup 8+} ion beam, have been measured relative to the undoped Y{sub 2}O{sub 3} sample and were found to be 1.34. The Tb{sup 3+} doped sample exhibited a less fading effect under the swift heavy ion beam.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Defect‐Free Sound Insulator Using Single Metal‐Based Friction Stir Process Array

Metals are excellent conductors for phonon transportation such as vibration, sound, and heat. Generally, metal sound insulators require multimaterial structure or defects and unimetal sound insulators are challenging. Therefore, a design of a defect-free sound insulator made by single alloys with multiple friction stir processes (FSPs) is proposed. Periodic friction stir processing can induce superlattice-like local mechanical properties’ modifications. By experimental acoustic characterization, it is observed that FSP can introduce clear acoustic–elastic property contrast on an aluminum plate by the presence of stir zone and heat-affected zones. In numerical simulations, the signature FSP-induced property profile is periodically and parallelly arranged on a long aluminum plate. The transmission gap frequencies are present on the frequency spectrum with the sound propagation direction perpendicular to the FSP paths. Disorder offsets on FSP periodicity are further introduced. Anderson localization is found on a resonance frequency, which provides −11 dB sound reduction by an exponential decay. Due to the finite design length, the slight disorder can also enhance sound insulation in the periodic transmission gap frequency. In conclusion, with analysis and comparison with different configurations, the best performance in the models can achieve −30 dB sound insulation in the 350 mm-long aluminum alloy plate with 14 parallel FSPs.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Simulation of kinematic Kikuchi diffraction patterns from atomistic structures

One of the limitations of atomistic simulations is that many of the computational tools used to extract structural information from atomic trajectories provide metrics that are not directly compatible with experiments for validation. In this work, to bridge between simulation and experiment, a method is presented to produce simulated Kikuchi diffraction patterns using data from atomistic simulations, without requiring a priori specification of the crystal structure or defect periodicity. The Kikuchi pattern simulation is based on the kinematic theory of diffraction, with Kikuchi line intensities computed via a discrete structure factor calculation. Reciprocal lattice points are mapped to Kikuchi lines using a geometric projection of the reciprocal space data. This method is validated using single crystal atomistic models, and the novelty of this approach is emphasized by simulating kinematic Kikuchi diffraction patterns from an atomistic model containing a nanoscale dislocation loop. Deviations in kinematic Kikuchi line intensities are explained considering the displacement field of the dislocation loop, as is done in diffraction contrast theory.

42 ENGINEERING↗
DOE OSTI2018

Tuning Electronic Structure of Single Layer MoS 2 through Defect and Interface Engineering

Transition-metal dichalcogenides (TMDs) have emerged in recent years as a special group of two-dimensional materials and have attracted tremendous attention. Among these TMD materials, molybdenum disulfide (MoS 2 ) has shown promising applications in electronics, photonics, energy, and electrochemistry. In particular, the defects in MoS 2 play an essential role in altering the electronic, magnetic, optical, and catalytic properties of MoS 2 , presenting a useful way to engineer the performance of MoS 2 . The mechanisms by which lattice defects affect the MoS 2 properties are unsettled. In this work, we reveal systematically how lattice defects and substrate interface affect MoS 2 electronic structure. We fabricated single-layer MoS 2 by chemical vapor deposition and then transferred onto Au, single-layer graphene, hexagonal boron nitride, and CeO 2 as substrates and created defects in MoS 2 by ion irradiation. Here, we assessed how these defects and substrates affect the electronic structure of MoS 2 by performing X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, and scanning tunneling microscopy/spectroscopy measurements. Molecular dynamics and first-principles based simulations allowed us to conclude the predominant lattice defects upon ion irradiation and associate those with the experimentally obtained electronic structure. We found that the substrates can tune the electronic energy levels in MoS 2 due to charge transfer at the interface. Furthermore, the reduction state of CeO 2 as an oxide substrate affects the interface charge transfer with MoS 2 . The irradiated MoS 2 had a faster hydrogen evolution kinetics compared to the as-prepared MoS 2 , demonstrating the concept of defect controlled reactivity in this phase. Our findings provide effective probes for energy band and defects in MoS 2 and show the importance of defect engineering in tuning the functionalities of MoS 2 and other TMDs in electronics, optoelectronics, and electrochemistry.

42 ENGINEERING↗
DOE OSTI2025

Modeling neutral defects in III-V ternary alloys with a special quasirandom structure: Analysis of As- and III-site point defects in InGaAs

While first-principles density functional theory modeling has become a vital tool to investigate defect properties in semiconductors, the lack of crystalline periodicity in pseudobinary random composition alloys, such as In 1−𝑥 ⁢Ga 𝑥 ⁢As, complicates such analyses. We present a simulation strategy to systematically take into account the variability in the local defect environment in order to predict statistical properties of neutral intrinsic defects in In 1−𝑥⁢ Ga 𝑥 ⁢As. We use a comprehensive sampling from a modest-sized 64-atom special quasirandom structure (SQS) to define a statistically representative set of defects, and use a 512-atom hypercell, a 2 × 2 × 2 supercell of SQS supercells, to achieve cell-size convergence. We articulate an equivalent site principle and describe how it constrains atomic chemical reference energies in computation of defect formation energies in pseudobinary alloys. A simple protocol for estimating reference energies for the Ga and In atoms sharing the III site succeeds in obtaining the equivalence of defects at Ga-sites and In sites in the SQS supercell, (<30 meV differences in average formation energies). For III-site defects, such as the As antisite As III , the statistical variability in formation energies is modest, ≈ 0.1–0.2 eV. The variability in formation energy at As-site defects, such as the As vacancy 𝑣 As , can be much larger, >1 eV. The As antisite is shown to be a low-energy defect and the most likely to be present in as-grown materials, just as in GaAs. All other defects are higher-energy defects unlikely to be important in native material, but potentially important in radiation-damaged material. With a strong variability in defect energies, especially on the As-site, explicit consideration of statistical variability due to compositional randomness will be imperative for meaningful and quantitative comparisons to experiment.

Density functional theory↗