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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Carrier removal and defect behavior in p-type InP

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

Weinberg, I.↗
NASA NTRS1991

Mapping crystal defects with a digital scanning ultramicroscope

A computer controlled scanning ultramicroscope has been built to assist in the characterization of transparent crystals. The device measures the scattering of a focused He-Ne laser beam by crystalline defects. As an XYZ translation table moves the crystal under the ultramicroscope, the scattered light is measured by a photodetector whose output is digitized and recorded. From this data, contour maps or three dimensional perspective plots of the scattering regions of the crystal can be generated to assist in finding patterns of defects which might be correlated with perturbations in the growth process. The verified resolution of the present instrument is about 1 micrometer, which is limited by the minimum step of the stepper-motor driven translation stages, optical diffraction effects and the sensitivity of the detector at the laser light frequency. The instrument was used to build a database of defects patterns in commercial laboratory grown triglycine sulphate (TGS) crystals, and to map defects in a TGS crystal grown from aqueous solution during the flight of Spacelab 3. This crystal shows indications of a reduction both in the generation of defects at the seed-new growth interface and in their propagation into the new crystal.

Springer, J. M.↗
NASA NTRS1993

Atomic oxygen interaction at defect sights in protective coatings on polymers flown on LDEF

Although the Long Duration Exposure Facility (LDEF) has exposed materials with a fixed orientation relative to the ambient low-Earth-orbital environment, arrival of atomic oxygen is angularly distributed as a result of the atomic oxygen's high temperature Maxwellian velocity distribution and the LDEF's orbital inclination. Thus, atomic oxygen entering defects in protective coatings on polymeric surfaces can cause wider undercut cavities than the size of the defect in the protective coating. Because only a small fraction of atomic oxygen reacts upon first impact with most polymeric materials, secondary reactions with lower energy thermally accommodated atomic oxygen can occur. The secondary reactions of scattered and/or thermally accommodated atomic oxygen also contribute to widening the undercut cavity beneath the protective coating defect. As the undercut cavity enlarges, exposing more polymer, the probability of atomic oxygen reacting with underlying polymeric material increases because of multiple opportunities for reaction. Thus, the effective atomic oxygen erosion yield for atoms entering defects increases above that of the unprotected material. Based on the results of analytical modeling and computational modeling, aluminized Kapton multilayer insulation exposed to atomic oxygen on row 9 lost the entire externally exposed layer of polyimide Kapton, yet based on the results of this investigation, the bottom surface aluminum film must have remained in place, but crazed. Atomic oxygen undercutting at defect sites in protective coatings on graphite epoxy composites indicates that between 40 to 100 percent of the atomic oxygen thermally accommodates upon impact, and that the reaction probability of thermally accommodated atomic oxygen may range from 7.7 x 10(exp -6) to 2.1 x 10(exp -3), depending upon the degree of thermal accommodation upon each impact.

Banks, Bruce A.↗
NASA NTRS1994

Electronic characterization of defects in narrow gap semiconductors

We use a Green's function technique to calculate the position of deep defects in narrow gap semiconductors. We consider substitutional (including antisite), vacancy, and interstitial (self and foreign) deep defects. We also use perturbation theory to look at the effect of nonparabolic bands on shallow defect energies and find nonparabolicity can increase the binding by 10 percent or so. We consider mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS). For substitutional and interstitial defects we look at the situation with and without relaxation. For substitutional impurities in MCT, MZT, and MZS, we consider x (the concentration of Cd or Zn) in the range 0.1 less than x less than 0.3 and also consider appropriate x so E(sub g) = 0.1 eV for each of the three compounds. We consider several cation site s-like deep levels and anion site p-like levels. For E(sub g) = 0.1 eV, we also consider the effects of relaxation. Similar comments apply to the interstitial deep levels whereas no relaxation is considered for the ideal vacancy model. Relaxation effects can be greater for the interstitial than the substitutional cases. Specific results are given in figures and tables and comparison to experiment is made in a limited number of cases. We find, for example, that I, Se, S, Rn, and N are possible cation site, s-like deep levels in MCT and Zn and Mg are for anion site, p-like levels (both levels for substitutional cases). The corresponding cation and anion site levels for interstitial deep defects are (Au, Ag, Hg, Cd, Cu, Zn) and (N, Ar, O, F). For the substitutional cases we have some examples of relaxation moving the levels into the band gap, whereas for the interstitial case we have examples where relaxation moves it out of the band gap. Future work involves calculating the effects of charge state interaction and seeing the effect of relaxation on vacancy levels.

Patterson, James D.↗
NASA NTRS1996

Electronic Characterization of Defects in Narrow Gap Semiconductors-Comparison of Electronic Energy Levels and Formation Energies in Mercury Cadmium Telluride, Mercury Zinc Telluride, and Mercury Zinc Selenide

We have used a Green's function technique to calculate the energy levels and formation energy of deep defects in the narrow gap semiconductors mercury cadmium telluride (MCT), mercury zinc telluride (MZT) and mercury zinc selenide (MZS). The formation energy is calculated from the difference between the total energy with an impurity cluster and the total energy for the perfect crystal. Substitutional (including antisite), interstitial (self and foreign), and vacancy deep defects are considered. Relaxation effects are calculated (with molecular dynamics). By use of a pseudopotential, we generalize the ideal vacancy model so as to be able to consider relaxation for vacancies. Different charge states are considered and the charged state energy shift (as computed by a modified Haldane-Anderson model) can be twice that due to relaxation. Different charged states for vacancies were not calculated to have much effect on the formation energy. For all cases we find deep defects in the energy gap only for cation site s-like orbitals or anion site p-like orbitals, and for the substitutional case only the latter are appreciably effected by relaxation. For most cases for MCT, MZT, MZS, we consider x (the concentration of Cd or Zn) in the range appropriate for a band gap of 0.1 eV. For defect energy levels, the absolute accuracy of our results is limited, but the precision is good, and hence chemical trends are accurately predicted. For the same reason, defect formation energies are more accurately predicted than energy level position. We attempt, in Appendix B, to calculate vacancy formation energies using relatively simple chemical bonding ideas due to Harrison. However, these results are only marginally accurate for estimating vacancy binding energies. Appendix C lists all written reports and publications produced for the grant. We include abstracts and a complete paper that summarizes our work which is not yet available.

Patterson, James D.↗
NASA NTRS1999

Identification and Control of Gravity Related Defect Formation During Melt Growth of Bismuth-Silicate (Bi12SiO20)

In the light of strong indications that a majority of critical defects formed in bismuth silicon oxide (BSO) during growth from the melt is related directly or indirectly to gravitational interference, it is suggested to use the reduced gravity environment of outer space for experimentation directed at the identification and control of these defects. The results of these experiments are expected to lead to advances in our understanding of crystal growth related defect formation in general and will establish a basis for effective defect engineering, the approach to efficient achievement of defect related, application specific properties in opto-electronic materials

Zheng, Y.↗
NASA NTRS1999

Solving Upwind-Biased Discretizations: Defect-Correction Iterations

This paper considers defect-correction solvers for a second order upwind-biased discretization of the 2D convection equation. The following important features are reported: (1) The asymptotic convergence rate is about 0.5 per defect-correction iteration. (2) If the operators involved in defect-correction iterations have different approximation order, then the initial convergence rates may be very slow. The number of iterations required to get into the asymptotic convergence regime might grow on fine grids as a negative power of h. In the case of a second order target operator and a first order driver operator, this number of iterations is roughly proportional to h-1/3. (3) If both the operators have the second approximation order, the defect-correction solver demonstrates the asymptotic convergence rate after three iterations at most. The same three iterations are required to converge algebraic error below the truncation error level. A novel comprehensive half-space Fourier mode analysis (which, by the way, can take into account the influence of discretized outflow boundary conditions as well) for the defect-correction method is developed. This analysis explains many phenomena observed in solving non-elliptic equations and provides a close prediction of the actual solution behavior. It predicts the convergence rate for each iteration and the asymptotic convergence rate. As a result of this analysis, a new very efficient adaptive multigrid algorithm solving the discrete problem to within a given accuracy is proposed. Numerical simulations confirm the accuracy of the analysis and the efficiency of the proposed algorithm. The results of the numerical tests are reported.

Diskin, Boris↗
NASA NTRS1994

Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells

InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.

Weinberg, I.↗
NASA NTRS1997

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

Silicon carbide (SiC) semiconductor technology has been advancing rapidly, but there are numerous crystal growth problems that need to be solved before SiC can reach its full potential. Among these problems is a need for an improvement in the surface morphology of epitaxial films that are grown to produce device structures. Various processes before and during epilayer growth lead to the formation of morphological defects observed in SiC epilayers grown on SiC substrates. In studies of both 6H and 4H-SiC epilayers, atomic force microscopy (AFM) and other techniques have been used to characterize SiC epilayer surface morphology. In addition to the well-known micropipe defect, SiC epilayers contain growth pits, triangular features (primarily) in 4H-SiC, and macro step due to step bunching. In work at NASA Lewis, it has been found that factors contributing to the formation of some morphological defects include: defects in the substrate bulk, defects in the substrate surface caused by cutting and polishing the wafer, the tilt angle of the wafer surface relative to the basal plane, and growth conditions. Some of these findings confirm results of other research groups. This paper presents a review of published and unpublished investigations into processes that are relevant to epitaxial film morphology.

Powell, J. A.↗
NASA NTRS2000

Thermographic Imaging of Defects in Anisotropic Composites

Composite materials are of increasing interest to the aerospace industry as a result of their weight versus performance characteristics. One of the disadvantages of composites is the high cost of fabrication and post inspection with conventional ultrasonic scanning systems. The high cost of inspection is driven by the need for scanning systems which can follow large curve surfaces. Additionally, either large water tanks or water squirters are required to couple the ultrasonics into the part. Thermographic techniques offer significant advantages over conventional ultrasonics by not requiring physical coupling between the part and sensor. The thermographic system can easily inspect large curved surface without requiring a surface following scanner. However, implementation of Thermal Nondestructive Evaluations (TNDE) for flaw detection in composite materials and structures requires determining its limit. Advanced algorithms have been developed to enable locating and sizing defects in carbon fiber reinforced plastic (CFRP). Thermal Tomography is a very promising method for visualizing the size and location of defects in materials such as CFRP. However, further investigations are required to determine its capabilities for inspection of thick composites. In present work we have studied influence of the anisotropy on the reconstructed image of a defect generated by an inversion technique. The composite material is considered as homogeneous with macro properties: thermal conductivity K, specific heat c, and density rho. The simulation process involves two sequential steps: solving the three dimensional transient heat diffusion equation for a sample with a defect, then estimating the defect location and size from the surface spatial and temporal thermal distributions (inverse problem), calculated from the simulations.

Plotnikov, Y. A.↗
NASA NTRS2005

Application of Hilbert-Huang Transform for Improved Defect Detection in Terahertz NDE of Shuttle Tiles

Terahertz NDE is being examined as a method to inspect the adhesive bond-line of Space Shuttle tiles for defects. Terahertz signals are generated and detected, using optical excitation of biased semiconductors with femtosecond laser pulses. Shuttle tile samples were manufactured with defects that included repair regions unbond regions, and other conditions that occur in Shuttle structures. These samples were inspected with a commercial terahertz NDE system that scanned a tile and generated a data set of RF signals. The signals were post processed to generate C-scan type images that are typically seen in ultrasonic NDE. To improve defect visualization the Hilbert-Huang Transform, a transform that decomposes a signal into oscillating components called intrinsic mode functions, was applied to test signals identified as being in and out of the defect regions and then on a complete data set. As expected with this transform, the results showed that the decomposed low-order modes correspond to signal noise while the high-order modes correspond to low frequency oscillations in the signal and mid-order modes correspond to local signal oscillations. The local oscillations compare well with various reflection interfaces and the defect locations in the original signal.

Anastasi, Robert F.↗
NASA NTRS1994

System and process for detecting and monitoring surface defects

A system and process for detecting and monitoring defects in large surfaces such as the field joints of the container segments of a space shuttle booster motor. Beams of semi-collimated light from three non-parallel fiber optic light panels are directed at a region of the surface at non-normal angles of expected incidence. A video camera gathers some portion of the light that is reflected at an angle other than the angle of expected reflectance, and generates signals which are analyzed to discern defects in the surface. The analysis may be performed by visual inspection of an image on a video monitor, or by inspection of filtered or otherwise processed images. In one alternative embodiment, successive predetermined regions of the surface are aligned with the light source before illumination, thereby permitting efficient detection of defects in a large surface. Such alignment is performed by using a line scan gauge to sense the light which passes through an aperture in the surface. In another embodiment a digital map of the surface is created, thereby permitting the maintenance of records detailing changes in the location or size of defects as the container segment is refurbished and re-used. The defect detection apparatus may also be advantageously mounted on a fixture which engages the edge of a container segment.

Mueller, Mark K.↗
NASA NTRS2011

Toward Intelligent Software Defect Detection

Source code level software defect detection has gone from state of the art to a software engineering best practice. Automated code analysis tools streamline many of the aspects of formal code inspections but have the drawback of being difficult to construct and either prone to false positives or severely limited in the set of defects that can be detected. Machine learning technology provides the promise of learning software defects by example, easing construction of detectors and broadening the range of defects that can be found. Pinpointing software defects with the same level of granularity as prominent source code analysis tools distinguishes this research from past efforts, which focused on analyzing software engineering metrics data with granularity limited to that of a particular function rather than a line of code.

Benson, Markland J.↗
NASA NTRS2019

An Experimental Investigation concerning the Effects of AFP Defects on Progressive Failure of Tensile Coupons

This paper discusses characterization approaches for the evaluation of potential defects that may occur during the automated fiber placement (AFP) process. Two nondestructive evaluation techniques were utilized simultaneously, acoustic emission (AE) and digital image correlation (DIC), to investigate correlations between mechanical properties and damage propagation during tension tests. The layup configuration is designed with the defect running across the width, and the stacking sequence with seven layers is produced: [−45/0/45/̅9̅̅0̅]s. A total of 3 panels were manufactured: one containing a gap defect in the middle layer, another one with an overlap defect, and a pristine panel for baseline comparison. Each panel accommodates six coupons having dimensions of 20” x 2”. The results indicate that defects caused during the manufacturing process affect damage initiation and growth.

Anay, Rafal↗
DOE OSTI2019

ADVANCED-STEM-BASED DEEP LEARNING FOR SEMANTIC SEGMENTATION OF DEFECTS IN STEELS

In this work, we developed a novel deep convolutional neural network (DCNN) model, called DefectNet, for robust and automated semantic segmentation of three crystallographic defects including line dislocations, precipitates and voids commonly observed in structural metals and alloys. In previous work, we established an experimental protocol for a diffraction contrast imaging scanning transmission electron microscopy (DCI STEM) technique and tailored it specifically for imaging defects in popular iron-based structural alloy. Thus, the DefectNet was trained over a small but high-quality DCI STEM defect image sets of a HT-9 martensitic steel before and after neutron irradiation for 111.8 dpa at 412°C. For the defect quantification that typically takes at least half an hour even for an expert, with a good model the machine learning algorithm can produce more reproducible and reliable quantification in a few seconds. This work demonstrates the feasibility of using deep learning algorithms for fast and accurate defect quantitative analysis.

Machine Learning, Radiation effects, Image analysi↗
DOE OSTI2023

Athermal annealing of pre-existing defects in crystalline silicon

Systematic investigations of electronic energy loss (S e ) effects on pre-existing defects in crystalline silicon (Si) are crucial to provide reliance on the use of ionizing irradiation to anneal pre-existing defects, leading to successful implementation of this technology in the fabrication of Si-based devices. In this regard, the S e effects on nonequilibrium defect evolution in pre-damaged Si single crystals at 300 K has been investigated using intermediate-energy ions (12 MeV O and Si ions) that interact with the pre-damaged surface layers of Si mainly by ionization, except at the end of their range where the nuclear energy loss (S n ) is no longer negligible. Furthermore, under these irradiation conditions, experimental results and molecular dynamics simulations have revealed that pre-existing disorder in Si can be almost fully annealed by subsequent irradiation with intermediate-energy incident ions with S e values as low as 1.5–3.0 keV/nm. Selective annealing of pre-existing defect levels in Si at room temperature can be considered as an effective strategy to mediate the transient enhanced diffusion of dopants in Si. This approach is more desirable than the regular thermal annealing, which is not compatible with the processing requirements that fall below the typical thermal budget.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Impacts of point defects on shallow doping in cubic boron arsenide: A first principles study

Cubic boron arsenide (BAs) stands out as a promising material for advanced electronics, thanks to its exceptional thermal conductivity and ambipolar mobility. However, effective control of p- and n-type doping in BAs poses a significant challenge, mostly as a result of the influence of defects. In the present study, we employed density functional theory (DFT) to explore the impacts of the common point defects and impurities on p-type doping of Be B and Si As , and on n-type doping of Si B and Se As . We found that the most favorable point defects formed by C, O, and Si are C As , O B O As , Si As , C As Si B , and O B Si As , which have formation energies of less than 1.5 eV. While the O impurity detrimentally affects both p- and n-type dopings, C and Si impurities are harmful for n-type dopings, making n-type doping a potential challenge. Interestingly, the antisite defect pair A s B B As benefits both p- and n-type doping. Finally, the doping limitation analysis presented in this study can potentially pave the way for strategic development in the area of BAs-based electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Enhanced defect annihilation capability of the graphene/copper interface: An in situ study

It is well known that energetic heavy ion irradiations can often induce defects and ultimately lead to material degradations. Interfaces, such as high-angle grain boundaries (HAGBs), are generally used as defect sinks for alleviating the irradiation damage. However, HAGBs are often unstable during radiation. Here we investigate the interfacial irradiation responses of the graphene (Gr)/Cu composites by using in situ Kr ++ ions irradiation under transmission electron microscopy. The results revealed that the Gr/Cu interface exhibits higher defect annihilation capability compared to the HAGBs in Cu. Moreover, the atomistic simulations suggested a slightly higher and larger range of stress field for the Gr/Cu interface, which contributes to the enhanced defects absorption capability. The present findings are essential to understand and design a new class of carbon/metal composites with superior irradiation tolerance.

36 MATERIALS SCIENCE↗