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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Tuning energy barriers by doping 2D group-IV monochalcogenides

Structural degeneracies underpin the ferroic behavior of anisotropic next-generation two-dimensional materials and lead to peculiar two-dimensional structural transformations under external fields, charge doping, and/or temperature. The most direct indicator of the ease of these transformations is an elastic energy barrier, defined as the energy difference between the (degenerate) structural ground state unit cell and a unit cell with an increased structural symmetry. Proximity of a two-dimensional material to a bulk substrate can affect the magnitude of the critical fields and/or temperature at which these transformations occur, with the first effect being a relative charge transfer, which could trigger a structural quantum phase transition. With this physical picture in mind, we report the effect of modest charge doping (within -0.2 and +0.2 electrons per unit cell) on the elastic energy barrier J s of ferroelastic black phosphorene and nine ferroelectric/ferroelastic monochalcogenide monolayers. J s is the energy needed to create a Pnm2 1 →P4/nmm two-dimensional structural transformation, and it is sensitive to the orbital character of the electronic charge added or removed. Similar to the effect on the elastic energy barrier of ferroelastic SnO monolayers, group-IV monochalcogenide monolayers show a tunable elastic energy barrier for similar amounts of doping, and a decrease (increase) of J s can be engineered under a modest hole (electron) doping of not more than one-tenth of an electron or a hole per atom.

36 MATERIALS SCIENCE↗
DOE OSTI2019

The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

GaN p ++ /n ++ tunnel junctions (TJs) with heavy bulk or delta Mg doping at the junction were grown via molecular beam epitaxy with a hysteresis-free and repeatable negative differential resistance (NDR). The TJ with Mg doping of 5.5 × 10 20 cm -3 shows NDR at~1.8 V and a large current density of 3.4 KA/cm 2 at -1.0 V. Atomic resolution scanning transmission electron microscopy imaging showed no additional defects despite the doping exceeding the solubility limit in GaN allowing subsequent epitaxy of series-connected layers and devices. GaN homojunction TJs grown on bulk GaN showed an improved current density and NDR stability. In addition, the effect of Mg delta doping at the junction was investigated for the first time showing a dramatic improvement in the tunneling characteristics. A metal-organic chemical vapor deposition (MOCVD) grown InGaN light-emitting diode (LED) with an MBE grown GaN homojunction tunnel contact to the MOCVD grown p-GaN layer shows superior lateral conductivity and improved luminescence uniformity, but suffers an added voltage penalty, assumed to be due to interface impurities, compared to control LED with indium-tin-oxide.

Epitaxy↗
DOE OSTI2021

Doped-carbon composites, synthesizing methods and applications of the same

A composite synthesized by the steps of preparing a solution having a carbon source material and a heteroatom containing additive; evaporating the solution to yield a plurality of powders; and subjecting the plurality of powders to a heat treatment for a duration of time effective to produce a doped carbon composite.

Viswanathan, Tito↗
DOE OSTI2019

Crystal Chemistry, Band-Gap Red Shift, and Electrocatalytic Activity of Iron-Doped Gallium Oxide Ceramics

This work for the first time unfurls the fundamental mechanisms and set the stage for an approach to derive electrocatalytic activity, which is otherwise not possible, in a traditionally known wide band gap oxide material. Specifically, we report on the tunable optical properties, in terms of wide spectral selectivity and red-shifted band gap, and electrocatalytic behavior of iron (Fe) doped gallium oxide (ß-Ga 2 O 3 ) model system. X-ray diffraction (XRD) studies of sintered Ga 2-x Fe x O 3 (GFO) (0.0 ≤ x ≤ 0.3) compounds provide evidence for the Fe 3+ substitution at Ga 3+ site without any secondary phase formation. Rietveld refinement of XRD patterns reveal that the GFO compounds crystallize in monoclinic crystal symmetry with C2/m space group. The electronic structure of the GFO compounds probed using X-ray photoelectron spectroscopy data reveals that, at lower concentrations of Fe exhibits mixed chemical valence states (Fe 3+ , Fe 2+ ), whereas single chemical valence state (Fe 3+ ) is evident for higher Fe content (x = 0.20-0.30). The optical absorption spectra reveal a significant red shift in the optical band gap with Fe doping. The origin of the significant red shift even at low concentrations of Fe (x = 0.05) is attributed to the strong sp-d exchange interaction originated from the 3 d 5 electrons of Fe 3+ . The optical absorption edge observed at ˜450 nm with lower intensity is the characteristic of Fe doped compounds associated with Fe 3+ - Fe 3+ double excitation process. Coupled with optical band gap red shift, electrocatalytic studies of GFO compounds reveals that, interestingly, Fe doped Ga 2 O 3 compound exhibits electrocatalytic activity in contrast to intrinsic Ga 2 O 3 . Fe doped samples (GFO) demonstrated appreciable electrocatalytic activity towards the generation of H 2 through electrocatalytic water splitting. An onset potential and tafel slope of GFO compounds includes: ~900 mV, ~210 mVdec -1 (x = 0.15) and ~1036 mV, ~290 mVdec-1 (x = 0.30). The electrocatalytic activity of Fe doped Ga-oxide compounds is attributed to cumulative effect of different mechanisms such as; doping resulted new catalytic centers, enhanced conductivity and electron mobility. Hence, in this report, for the first time, we explored a new pathway; electrocatalytic behavior of Fe doped Ga 2 O 3 resulted due to Fe chemical states, red shift in optical band gap. The implications derived from this work may be applicable to a large class of compounds and further options may be available to design functional materials for electrocatalytic energy production.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Radiation-Induced Effects in Ce{sup 3+}- and Eu{sup 2+}-Doped Al{sub 5}O{sub 6}N

Polycrystalline Al{sub 5}O{sub 6}N samples have been prepared by sol–gel synthesis followed by carbothermal reduction and nitridation. X-ray luminescence (XRL) spectra and thermoluminescence (TL) curves of Ce{sup 3+}- and Eu{sup 2+}-doped aluminum oxynitride have been measured in the temperature range 5–380 K and analyzed. Working TL peaks have been detected in the range 150–250 K for the Al{sub 5}O{sub 6}N:Ce{sup 3+} sample and in the range 140–200 K for the Al{sub 5}O{sub 6}N:Eu{sup 2+} samples. There are also lower temperature peaks: in the ranges 10–60 and 20–100 K. The XRL spectra of the samples have been measured at temperatures of 8 (for the first time) and 300 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1991

Thermal effects on cavity stability of chromium- and neodymium-doped gadolinium scandium gallium garnet laser under solar-simulator pumping

Results are presented on testing a Cr- and Nd-codoped Gd-Sc-Ga-garnet (Cr:Nd:GSGG) crystal and a Nd:YAG crystal (both of 3.2 mm diam and 76-mm long) for pulsed and CW laser operations using a flashlamp and solar simulator as pumping sources. Results from experiments with the flashlamp show that, at pulse lengths of 0.11, 0.28, and 0.90 ms, the slope efficiency of the Cd:Nd:GSGG crystal was higher than that of the Nd:YAG crystal and increased with pulse width. With the solar simulator, however, the CW laser operation of the Cr:Nd:GSGG crystal was limited to intensities not greater than 1500 solar constants, while the Nd:YAG laser successfully performed for all pump beam intensities available. It was found that the exposure for several minutes of the Cr:Nd:GSGG crystal to pump beam intensity of 3000 solar constants led to its damage by thermal cracking, indicating that a better solar-pumped CW laser performance may be difficult to realize with rod geometry.

Kim, Kyong H.↗
DOE OSTI2022

Electron–phonon interaction and ultrafast photoemission from doped monolayer MoS 2

We have examined the effect of electron–phonon coupling on photoluminescence and ultrafast response of electron doped monolayer MoS2, using a combination of density functional theory, time dependent density functional theory, and many-body theory. For small doping (~1–3%) of interest here, the electron–phonon coupling parameter is modest (~0.1–0.2) but its effect on the emissive properties and response of the system to femtosecond (fs) laser pulses is striking. We find an ultrafast (fs) relaxation of the electronic subsystem as well as a high fluence of visible light emission induced by electron phonon interaction. Together with high carrier mobility, these features of monolayer MoS2 may be relevant for optoelectronic technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Effect of Yb Substitution on Microstructure and Superconducting Properties of Y{sub 1−x}Yb{sub x}Ba{sub 2}Cu{sub 3}O{sub 7−δ} Films

The purpose of this study was to improve the critical current density (J{sub c}) of YBa{sub 2}Cu{sub 3}O{sub 7−δ} (YBCO) superconducting films at high magnetic fields. Thin Y{sub 1−x}Yb{sub x}Ba{sub 2}Cu{sub 3}O{sub 7−δ} (Y{sub 1−x}Yb{sub x}BCO) superconducting films on LaAlO{sub 3} substrates were prepared by modified low-fluorine metal organic deposition method (LF-MOD) in order to investigate the effect of Yb substitution on the microstructure and superconducting properties of a YBCO-coated conductor. In this study, single-phased, c-axial-aligned Y{sub 1−x}Yb{sub x}BCO films were obtained. Yb doping had a little effect on the critical temperature (T{sub c}) and transition width (ΔT) values of Y{sub 1−x}Yb{sub x}BCO films. An abnormal phenomenon was observed that the J{sub c} of Y{sub 1−x}Yb{sub x}BCO films at low field was smaller than that of the pure YBCO film, but the J{sub c} of Y{sub 1−x}Yb{sub x}BCO films at high field was much greater than that of the undoped YBCO film. Compared to pure YBCO film, the J{sub c} values of Y{sub 0.75}Yb{sub 0.25}BCO and Y{sub 0.25}Yb{sub 0.75}BCO films were enhanced by a factor of 8 at 8 T, 65 K, which meant that chemical substitution of Yb into the Y site could improve flux pinning significantly under the high magnetic field in Y{sub 1−x}Yb{sub x}BCO coated conductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1997

Growth, Spectroscopy and Photorefractive Investigation of Vanadium Doped CdSSe

We present two-wave mixing results obtained with a CdS(0.8)Se(0.2):V crystal. The CdS(0.8)Se(0.2):V crystal was grown by physical vapor transport (PVT) along with a concentration of 150 ppm (nominal) vanadium for creating trap centers. The as-grown crystal has a large crystal size, good optical quality, and a medium resistivity of 10(exp 6) - 108 ohms-cm. A large photorefractive gain coefficient of ().24 cm-' was observed at 633 nm with an optical intensity of 60 mW/cm(exp 2) and a grating period of 1.6 microns. To our knowledge, this is the first observation of the photorefractive effect in a vanadium doped CdSSe crystal. Room temperature absorption and low temperature photoluminescence spectroscopy measurements are also discussed. With a significant photorefractive effect, the CdSSe:V crystals are promising for device applications based on photorefractive effect, in the wavelength range of 600-700 nm.

Davis, Michelle↗
DOE OSTI2020

Influence of substrate misorientation on the optical properties of Mg-doped GaN

The GaN substrate miscut angle has a significant effect on the optical properties of Mg-doped GaN grown by metal-organic chemical vapor deposition. We have studied the optical properties of epilayers grown on c-plane GaN wafers with nominal miscut angles of 0.3° and 4° toward the [11¯00] direction. Periodic surface steps are observed in thin films grown on 0.3° miscut substrates. The step separation and height, as well as the surface roughness, increase with layer thickness, leading to a decrease in Mg doping efficiency. For films grown on 4° miscut substrates, step bunching causes the formation of visually observable wavy features on the film surface with strong spatial variations in cathodoluminescence characteristics, indicating a significant effect of surface morphology on the nature of Mg incorporation and p-type characteristics.

Liu, Hanxiao (ORCID:0000000331067542)↗
DOE OSTI2017

Doped-carbon composites, synthesizing methods and applications of the same

A method of synthesizing a doped carbon composite includes preparing a solution having a carbon source material and a heteroatom containing additive, evaporating the solution to yield a plurality of powders, and subjecting the plurality of powders to a heat treatment for a duration of time effective to produce the doped carbon composite.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Doped-carbon composites, synthesizing methods and applications of the same

A method of synthesizing a doped carbon composite includes preparing a solution having a carbon source material and a heteroatom containing additive, evaporating the solution to yield a plurality of powders, and subjecting the plurality of powders to a heat treatment for a duration of time effective to produce the doped carbon composite.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Probing the low-temperature limit of the quantum anomalous Hall effect

Quantum anomalous Hall effect has been observed in magnetically doped topological insulators. However, full quantization, up until now, is limited within the sub–1 K temperature regime, although the material’s magnetic ordering temperature can go beyond 100 K. Here, we study the temperature limiting factors of the effect in Cr-doped (BiSb)2Te3 systems using both transport and magneto-optical methods. By deliberate control of the thin-film thickness and doping profile, we revealed that the low occurring temperature of quantum anomalous Hall effect in current material system is a combined result of weak ferromagnetism and trivial band involvement. Our findings may provide important insights into the search for high-temperature quantum anomalous Hall insulator and other topologically related phenomena.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2017

Phosphides or nitrides for better NLO properties? A detailed comparative study of alkali metal doped nano-cages

Highlights: • Alkali metal doped boron and aluminum phosphide nano-cages are evaluated for NLO properties. • The NLO response of phosphide nano-cages is compared with nitride nano-cages. • Phosphide nano-cages show better NLO properties than the corresponding nitride nano-cages. • Conductivity of doped nano-cages is much higher than pristine nano-cages. • MAl{sub 11}P{sub 12} and MB{sub 11}P{sub 12} show monotonic increase in hyperpolarizability with size of alkali metal. - Abstract: Phosphide nano-cages of MX{sub 12}P{sub 11} and MX{sub 11}P{sub 12} (where X = B or Al, M = Li, Na, K) are investigated theoretically for geometric, electronic and nonlinear optical (NLO) properties. Alkali metal is doped by replacing (a) aluminum or boron atom and (b) phosphorus atom. Alkali metal doping can remarkably alter the electronic and NLO properties of the nano-cages, regardless of doping site. HOMO-LUMO gap is decreased whereas first hyperpolarizability is enhanced significantly in doped AlP and BP nano-cages. PDOS (partial density of states) analysis suggests that diffuse excess electrons from alkali metal play important role in boosting NLO properties of phosphide nano-cages. TD-DFT calculations are performed to study the effect of alkali metal doping on absorption spectra. Red shift is observed in the UV–vis spectra of all considered nano-cages. Comparison of phosphide nano-cages with nitride nano-cages indicated that doping nitride nano-cages with alkali metal leads to greater hyperpolarizability and NLO response than doping phosphide nano-cages.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Metal-to-insulator transition in oxide semimetals by anion doping

Dirac semimetals exhibiting nontrivial topological characteristics stand as exemplary parent compounds, offering great promise for the realization of novel electronic states. These materials also serve as a versatile platform for systematically investigating topological quantum phase transitions. In this study, we present compelling evidence of profound structural and transport phase shifts in a recently uncovered oxide Dirac semimetal, SrNbO3, achieved through effective in situ anion doping. Notably, a remarkable increase in resistivity of more than three orders of magnitude at room temperature is observed upon nitrogen-doping. The extent of electronic modulation in SrNbO3 is strongly correlated with the misfit strain, underscoring its phase instability to both chemical doping and crystallographic symmetry variations. Using first-principles calculations, we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO3-?N?. Consequently, a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3. This investigation sheds light on the potential of anion engineering in oxide Dirac semimetals, offering pathways for manipulating their physical properties. These insights hold promise for future applications that harness these materials for tailored functionalities.

Hong, Haitao↗