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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 739 records · Page 41
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

The critical role of synthesis conditions on small polaron carrier concentrations in hematite—A first-principles study

Achieving highly efficient energy conversion with transition metal oxides necessitates overcoming conductivity limitations due to the formation of small polarons. Detailed understanding of the interplay among intrinsic defects, dopants, and electron polarons can help devise strategies for achieving higher carrier concentrations, therefore improving carrier conductivity. This work employs first-principles calculations to reliably predict electron polaron concentrations in a prominent polaronic oxide, hematite (Fe 2 O 3 ), by resolving interactions between charged defects and electron polarons and keeping charge neutrality condition among all charged species. This work addresses that both V O and Fe i can be primary donors in undoped hematite depending on the synthesis conditions, such as synthesis temperature and oxygen partial pressure, despite the fact that V O owns an extremely high ionization energy compared to k B T. Furthermore, from calculations of a plethora of n-type dopants (group IV and V elements), we find that Ti, Ge, Sb, and Nb are able to raise electron polaron concentrations in hematite significantly without considering dopant clustering. However, the magnitude of electron polaron concentration increase would be smaller if the dopant has a high tendency of clustering, such as Ti. Here we reveal the critical role of synthesis conditions on tuning electron polaron concentrations of both undoped and doped hematite. Our theoretical analysis provides important insights and general design principles for engineering more conductive polaronic oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Degradation Dynamics of Perovskite Solar Cells Under Fixed Reverse-Current Injection

Previous studies of reverse-bias stability in perovskite solar cells have focused primarily on voltage-controlled tests. Here we instead investigate perovskite solar cell degradation under well-defined, constant reverse-current stress. We show that the choice of hole-transport layer dictates the dominant degradation pathway: cells using thick poly(triphenylamine) (PTAA) layers can tolerate high reverse bias but quickly undergo catastrophic breakdown under fixed reverse current near their one-sun maximum power-point. In contrast, cells modified with phosphonic-acid interface layer MeO-2PACz, with poorer indium-doped tin oxide (ITO) coverage compared to PTAA, exhibit gradual and recoverable degradation under certain stress and recovery conditions. For MeO-2PACz devices, degradation increases with both current magnitude and duration. Importantly, when normalized by injected charge (current times duration), lower currents applied over longer times cause more degradation than higher currents over shorter periods. Here, combining electrical measurements with spatially resolved photoluminescence imaging, our observations support an ion- and charge-mediated interfacial electrochemical degradation mode.

Degradation↗
DOE OSTI2022

Electroluminescence from Single-Walled Carbon Nanotubes with Quantum Defects

Individual single-walled carbon nanotubes with covalent sidewall defects have emerged as a class of photon sources whose photoluminescence spectra can be tailored by the carbon nanotube chirality and the attached functional group/molecule. Here we present electroluminescence spectroscopy data from single-tube devices based on (7, 5) carbon nanotubes, functionalized with dichlorobenzene molecules, and wired to graphene electrodes. We observe electrically generated, defect-induced emissions that are controllable by electrostatic gating and strongly red-shifted compared to emissions from pristine nanotubes. The defect-induced emissions are assigned to excitonic and trionic recombination processes by correlating electroluminescence excitation maps with electrical transport and photoluminescence data. At cryogenic conditions, additional gate-dependent emission lines appear, which are assigned to phonon-assisted hot-exciton electroluminescence from quasi-levels. Similar results were obtained with functionalized (6, 5) nanotubes. We also compare functionalized (7, 5) electroluminescence data with photoluminescence of pristine and functionalized (7, 5) nanotubes redox-doped using gold(III) chloride solution. This work shows that electroluminescence excitation is selective toward neutral defect-state configurations with the lowest transition energy, which in combination with gate-control over neutral versus charged defect-state emission leads to high spectral purity.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Powerful Terahertz Emission from a Bi 2 Sr 2 Ca Cu 2 O 8+ δ Mesa Operating Above 77 K

Mesa-shaped structures of the high critical temperature (high-T c ) superconductor Bi 2 Sr 2 CaCu 2 O 8+δ ; contain stacked intrinsic Josephson junctions. As such, they are a promising source of coherent radiation in the "terahertz gap" range, spanning from approximately 0.3 to 2.0 THz. Technological applications of these devices become far more practical if they can be operated at a cryogenic bath temperature of 77 K or higher. Previous works have reported emission from this type of device at high terahertz power levels at lower operating temperatures, 40-60 K, while at T bath >= 77 K observed power levels have generally been low. Here we report generation of 130 mu W of coherent power at 0.456 THz from a mesa of Bi 2 Sr 2 CaCu 2 O 8+δ ; doped with 0.16 holes per Cu atom, at a bath temperature of 77.4 K. Here, we find that the device radiates terahertz power when clearly identifiable cavity modes are excited, and that the frequency and bias voltage corresponding to each of these modes is almost independent of temperature. This is consistent with these modes having terahertz-frequency electric fields with very little dependence on vertical position within the mesa. We also find that the terahertz power radiated from any given mode decreases monotonically as the mesa temperature is increased. On the other hand, the low-frequency modes become inaccessible at low temperatures due to retrapping of the intrinsic Josephson junctions, and the maximum radiation power for the emitting mode is typically achieved at the temperature at which the retrapping voltage reaches the resonance voltage for this mode.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1994

Si 1-X Ge X /Si Heterojunction Internal Photoemission Long Wavelength Infrared Detector

Long wavelength Si 1-X Ge X /Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si 1-X Ge X layers on Si. Recently, Si 0.7 GE 0.3 /SI HIP detectors with either a Si 1-X Ge X single layer or a Si 1-X Ge X /Si multilayer have been demonstrated with cutoff wavelengths out to 23 µm. Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si 1-X Ge X /Si heterojunction internal photoemission infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C 1 , for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.

infrared↗
DOE OSTI2023

Exploring the $A$-V-Sb landscape beyond $A$$\mathrm{V_3}$ $\mathrm{Sb_5}$: A case study on the $\mathrm{KV_6}$ $\mathrm{Sb_6}$ Kagome compound

Kagome compounds have garnered attention in the past few years for their intriguing magnetic properties arising from spin frustration dictated by the geometry of the Kagome sublattice. In this paper, we highlight the success of the unconventional hydride route for the fast and easy synthesis of the Kagome compound $\mathrm{KV_6}$ $\mathrm{Sb_6}$. Here, high-temperature in situ powder x-ray diffraction (PXRD) studies proved to be useful in hinting at the existence of $\mathrm{KV_6}$ $\mathrm{Sb_6}$, identifying its synthesis conditions, and understanding the reaction mechanism. The crystal structure for $\mathrm{KV_6}$ $\mathrm{Sb_6}$ was determined from high-resolution PXRD data. The compound has a layered structure [$R\overline{3}m, a = 5.5318$ (9) Å, $c = 34.23$ (3)Å 3 $Z = 3$] at room temperature] and features a Kagome bilayer of V atoms. $\mathrm{KV_6}$ $\mathrm{Sb_6}$ is isostructural to the previously reported $\mathrm{RbV_6}$ $\mathrm{Sb_6}$ and $\mathrm{CsV_6}$ $\mathrm{Sb_6}$ compounds. $\mathrm{KV_6}$ $\mathrm{Sb_6}$ is thermally stable in vacuum up to 1173 K, as evident from the high-temperature in situ PXRD and differential scanning calorimetric analysis. Investigation of magnetic properties for $\mathrm{KV_6}$ $\mathrm{Sb_6}$ between 2 and 300 K reveals temperature-independent paramagnetism and an absence of superconductivity, like the Rb and Cs analogs. Furthermore, we compare the magnetic properties of K V 3 Sb 5 , another ternary Kagome compound, synthesized via two different methods: the hydride route and the traditional route from elements. Low-temperature transport property measurements of $\mathrm{KV_6}$ $\mathrm{Sb_6}$ indicate metallic behavior and an intrinsically low thermal conductivity of $\mathrm{1.0 W K^-1}$ $\mathrm{m^-1}$ at 300 K. The layered structure of $\mathrm{KV_6}$ $\mathrm{Sb_6}$ makes it an attractive candidate for deintercalation and doping studies to tune both magnetic and transport properties, laying a foundation for further studies.

36 MATERIALS SCIENCE↗
NASA NTRS2015

Testing of an Arcjet Thruster with Capability of Direct-Drive Operation

Electric thrusters typically require a power processing unit (PPU) to convert the spacecraft provided power to the voltage-current that a thruster needs for operation. Testing has been initiated to study whether an arcjet thruster can be operated directly with the power produced by solar arrays without any additional conversion. Elimination of the PPU significantly reduces system-level complexity of the propulsion system, and lowers developmental cost and risk. The work aims to identify and address technical questions related to power conditioning and noise suppression in the system and heating of the thruster in long-duration operation. The apparatus under investigation has a target power level from 400-1,000 W. However, the proposed direct-drive arcjet is potentially a highly scalable concept, applicable to solar-electric spacecraft with up to 100's of kW and beyond. A direct-drive electric propulsion system would be comprised of a thruster that operates with the power supplied directly from the power source (typically solar arrays) with no further power conditioning needed between those two components. Arcjet thrusters are electric propulsion devices, with the power supplied as a high current at low voltage; of all the different types of electric thruster, they are best suited for direct drive from solar arrays. One advantage of an arcjet over Hall or gridded ion thrusters is that for comparable power the arcjet is a much smaller device and can provide more thrust and orders of magnitude higher thrust density (approximately 1-10 N/sq m), albeit at lower I(sub sp) (approximately 800-1000 s). In addition, arcjets are capable of operating on a wide range of propellant options, having been demonstrated on H2, ammonia, N2, Ar, Kr, Xe, while present SOA Hall and ion thrusters are primarily limited to Xe propellant. Direct-drive is often discussed in terms of Hall thrusters, but they require 250-300 V for operation, which is difficult even with high-voltage solar arrays. The arcjet requires under 100 V, which is more in-line with what is easily possible with a solar array. Direct-drive of an electric propulsion system confers the advantage of reducing or eliminating the power processing unit (PPU) that is typically needed to convert the spacecraft-provided power to the voltage and current needed for thruster operation. Since the PPU is typically the most expensive piece of an electric thruster system, from both a fabrication and qualification standpoint, its elimination offers the potential for major reductions in system cost and risk. The design of the arcjet built for this effort was based on previous low power (1 kW class) arcjets. It has a precision machined 99.95% pure tungsten anode which also serves as the nozzle. The anode constrictor region is 1 mm (0.040-in) diameter and 1 mm (0.040-in) long. The cathode is a tungsten welding electrode doped with LaO2; its tip was precision ground to a 30◦ angle ending in a blunt end. The two electrodes are separated by a boron-nitride insulator which also serves as the propellant injection manifold; it ends in six small holes which introduce the propellant gas in the diverging section of the nozzle, directly adjacent to the cathode. The electrodes and insulator are housed in a stainless-steel outer-body, with a Macor insulator at the mid-plane to provide thermal isolation between the front and back halves of the device. The gas seals were made using Grafoil gaskets. Figure 1A shows the assembled thruster in the vacuum chamber; figure 1B shows the thruster in operation on argon at a flow rate of 676 sccm (20 mg/s). Initial testing was conducted in a 3.5-ft diameter vacuum chamber; the ultimate pressure reached during quasi-steady operation of the thruster was about 330 millitorr. The thruster was powered with a high-current, 0-100A, 15 kW power supply. The discharge was initiated with a high-voltage (approximately 10 kV) spark initiator that was isolated from the supply by a stack of diodes. The testing indicated that an operating point exists within the I-V characteristics that is compatible with direct-drive solar-electric operation; for a flow rate of 20 mg/s (argon) the arc could be sustained at a voltage of about 20 V and a current of 25 A (500W).

Martin, Adam K.↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nitrogen-doped graphene-wrapped Cu 2 S as a superior anode in sodium-ion batteries

Sodium-ion batteries (SIBs) have been attracting an ever-growing research interest, mainly ascribed to their cost-effectiveness. However, SIBs have been significantly hindered by lack of a suitable anode. Herein, an exceptional Cu 2 S-based composite anode is developed via a facile ball-milling method, in which Cu 2 S particles are wrapped by nitrogen-doped graphene sheets (Cu 2 S@NG). This Cu 2 S@NG composite anode enables extremely long cycling life, ultra-stable cyclability with high capacity, and excellent rate capability. The superior performance of the Cu 2 S@NG composite is owing to its intriguing core-shell structure and the exceptional properties of both the Cu 2 S and NG. In this study, it is found that the NG shell yields multiple merits in improving the performance of Cu 2 S: (i) mitigating the loss of active materials, (ii) constituting a stable interface, (iii) providing improved electrical conductivity and good ionic transfer, and (iv) enhancing mechanical integrity. Additionally, the vital effects of different voltage windows and a surface coating via atomic layer deposition on further enhancing performance are clarified. Significantly, the electrochemical mechanism of Cu 2 S during sodiation/desodiation is unveiled using advanced synchrotron-based in-situ X-ray diffraction and X-ray adsorption spectroscopy. This work represents a great advance in seeking high-performance anodes in SIBs.

25 ENERGY STORAGE↗
DOE OSTI2022

Investigating Local Carrier Dynamics in PERC Patterned CdTe Solar Cells

Remarkable progress has been achieved in CdTe photovoltaics (PVs) to further improve cell performance while reducing manufacturing costs. Researchers optimized the front contact that leads the short-circuit current density (J sc ) over 31mA/cm 2 (e.g., (Zn, Mg)O buffer layer and/or alloying CdTe with Se). Reese et al. reported an open-circuit voltage (V oc ) over 1 V with group-V doped single crystal, showing the feasibility of increasing V oc in CdTe PV that is fixed to less than 900 mV in most cases. Recent studies suggested that the V oc improvement in polycrystalline CdTe PVs requires well-passivated back contact. One possible strategy is to use CdMgTe alloy (E g > 1.8 eV), where the band-gap offset (ΔE CB ≈ 0.2 eV) reflects minority carrier electrons, thereby decreasing surface recombination. Another strategy is to utilize a stable Al 2 O 3 layer as an electron reflector; experimental works confirmed the improved performance with a conformal Al 2 O 3 layer. In this configuration, the precise control of Al 2 O 3 (≈1 nm) over the entire CdTe layer is essential because the J sc greatly depends on the tunneling current. While promising, both CdMgTe and Al 2 O 3 passivation on CdTe introduce unfavorable valence band offset that blocks the hole transport. Kephart et al. proposed a patterned passixc vation layer (≈ 20 nm Al 2 O 3 ) with point contacts (≈ 3 μm in diameter) that extract hole carriers. This configuration is similar to the passive emitter and rear contact (PERC) design that has been extensively studied in Si PVs. While remarkably high carrier lifetime and photoluminescence (> 10 X) were measured, consistent improvement in V oc and efficiency in this CdTe PERC were not yet observed. At this time, it is unclear how the surface potential is distributed in the presence of patterned Al 2 O 3 reflectors and how this additional field impacts the PV performance for Cu-doped and group-V doped CdTe PERC devices. To tackle this challenge, we develop robust nanofabrication and characterization platform to study CdTe PERC devices consisting of a patterned Al 2 O 3 layer on CdSe( 1-x )Te x (Cu-doped, GrV-doped; x = 0 to 1; CST). First Solar supplies high-quality CST materials. The dark and light I-Vs under 1-sun illumination are extracted for a series of each set of devices. We perform quantitative and qualitative PV analysis for a series of Cu-doped and Gr-V doped PERC devices, showing notably different V oc changes for GrV-doped compared to Cu-doped PERC devices. This project attempts to produce individual contacts on single grains and grain boundaries to measure lateral transport. As a model system, we use a CdSe( 1-x )Te x film on glass prepared by a colossal grain growth (CGG) technique at National Renewable Research Laboratories (NREL). Our preliminary results confirm that intergranular transport is hindered by the electrical barrier formed near grain boundaries. The PERC fabrication and the lateral transport measurement platform developed in this project can easily be applied to other types of advanced CdSe( 1-x )Te x architectures to better understand local photocarrier transport, in turn, providing the fundamental knowledge to improve the performance of CdTe PVs.

14 SOLAR ENERGY↗
DOE OSTI2024

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a large bandgap of 4.5–4.9 eV, a high critical electric field of ~8 MV/cm, and a high Baliga’s figure of merit (BFOM). Unipolar β-Ga2O3 devices such as Schottky barrier diodes (SBDs) and field-effect transistors (FETs) have been demonstrated. Recently, there has been growing attention toward developing β-Ga2O3-based heterostructures and heterojunctions, which is mainly driven by the lack of p-type doping and the exploration of multidimensional device architectures to enhance power electronics’ performance. This paper will review the most recent advances in β-Ga2O3 heterostructures and heterojunctions for power electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, and β-Ga2O3 heterojunctions/heterostructures with other wide- and ultra-wide-bandgap materials and the integration of two-dimensional (2D) materials with β-Ga2O3. Discussions of the deposition, fabrication, and operating principles of these heterostructures and heterojunctions and the associated device performance will be provided. This comprehensive review will serve as a critical reference for researchers engaged in materials science, wide- and ultra-wide-bandgap semiconductors, and power electronics and benefits the future study and development of β-Ga2O3-based heterostructures and heterojunctions and associated power electronics.

Herath Mudiyanselage, Dinusha (ORCID:0000000186119↗
NASA NTRS2004

Polyimide/Carbon Nanotube Composite Films for Electrostatic Charge Mitigation

Low color, space environmentally durable polymeric films with sufficient electrical conductivity to mitigate electrostatic charge (ESC) build-up have potential applications on large, deployable, ultra-light weight Gossamer spacecraft as thin film membranes on antennas, solar sails, thermal/optical coatings, multi-layer insulation blankets, etc.. The challenge has been to develop a method to impart robust electrical conductivity into these materials without increasing solar absorptivity (alpha ) or decreasing optical transparency or film flexibility. Since these spacecraft will require significant compaction prior to launch, the film portion of the spacecraft will require folding. The state-of-the-art clear, conductive coating (e.g. indium-tin-oxide, ITO) is brittle and cannot tolerate folding. In this report, doping a polymer with single-walled carbon nanotubes (SWNTs) using two different methods afforded materials with good flexibility and surface conductivities in the range sufficient for ESC mitigation. A coating method afforded materials with minimal effects on the mechanical, optical, and thermo-optical properties as compared to dispersal of SWNTs in the matrix. The chemistry and physical properties of these nanocomposites are discussed.

Smith, Joseph G., Jr.↗
DOE OSTI2020

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

Abstract Ever‐increasing demand on electronic devices with ultrahigh‐density non‐volatile data storage has attracted great interest in novel ferroelectric memories based on conductive ferroelectric domain walls. Embedded in an insulating material, ferroelectric domain walls have the capability of being (re)created, displaced, erased, and altered in their spatial configurations and electronic characteristics. However, the domain wall conductivities are in most cases not yet sufficiently high to ensure the current density required to drive read‐out circuits operating at high speeds. In this work, a giant domain wall current (>10 µA) of a single charged domain wall is obtained through conductive atomic force microscopy with a bias field of 4 V. This is achieved in self‐assembled BiFeO 3 nanocrystals grown by sol‐gel method on Nb‐doped SrTiO 3 substrates. Local configurations of domains and domain wall types are studied using vector piezoresponse force microscopy and high‐resolution transmission electronic microscopy. The enhancement of the wall current is shown to be due to the formation of conducting pathways of charged defects accumulated along domain walls and traversing the nanocrystals. The diverse domain walls can be manipulated by electric field in a perpendicular architecture. The perpendicular array structure of BiFeO 3 nanocrystals should have great potentials for developing perpendicular nanoelectronic prototypes.

Liu, Lisha↗
DOE OSTI2021

Intramolecular Electric Field Construction in Metal Phthalocyanine as Dopant‐Free Hole Transporting Material for Stable Perovskite Solar Cells with >21 % Efficiency

Abstract Low conductivity and hole mobility in the pristine metal phthalocyanines greatly limit their application in perovskite solar cells (PSCs) as the hole‐transporting materials (HTMs). Here, we prepare a Ni phthalocyanine (NiPc) decorated by four methoxyethoxy units as HTMs. In NiPc, the two oxygen atoms in peripheral substituent have a modified effect on the dipole direction, while the central Ni atom contributes more electron to phthalocyanine ring, thus efficiently increasing the intramolecular dipole. Calculation analyses reveal the extracted holes within NiPc are mainly concentrated on the phthalocyanine core induced by the intramolecular electric field, and further to be transferred by π‐π stacking space channel between NiPc molecules. Finally, the best efficiency of PSCs with NiPc as dopant‐free HTMs realizes a record value of 21.23 % (certified 21.03 %). The PSCs also exhibit the good moisture, heating and light stabilities. This work provides a novel way to improve the performance of PSCs with free‐doped metal phthalocyanines as HTMs.

Yu, Zefeng↗
DOE OSTI2022

Critical role of acceptor dopants in designing highly stable and compatible proton-conducting electrolytes for reversible solid oxide cells

Proton-conducting electrolytes are receiving increasing attention due to their high ionic conductivity at intermediate temperatures, enabling the operation of solid oxide cells with high energy efficiency at low cost. However, the effect of B-site dopants on the properties of doped barium hafnate-cerate electrolyte materials, especially in single cells under operating conditions, has not been systematically studied. Here we report our findings in the development of a series of proton-conducting electrolytes with a general formula of BaHf 0.1 Ce 0.7 R 0.2 O 3–δ (BHCR172, R = Yb, Er, Y, Gd, Sm). Here, the results reveal that electrical conductivity, ionic transference number, chemical stability against steam and CO 2 , and compatibility with NiO during sintering are all closely correlated with the dopant size. In particular, the reaction with NiO is found to strongly affect the properties of the electrolytes and hence cell performance. Among all tested compositions, BaHf 0.1 Ce 0.7 Yb 0.2 O 3–δ (BHCYb172) shows excellent chemical stability and minimal reactivity towards NiO, as predicted from density functional theory (DFT)-based calculations and confirmed by experimental results. In addition, proton-conducting reversible solid oxide cells (P-ReSOCs) based on the optimized electrolyte composition, BHCYb172, demonstrate exceptional performance and stability, achieving a remarkable peak power density of 1.74 W cm –2 (O 2 as the oxidant) at 600 °C in the fuel cell mode and a high current density of 2.0 A cm –2 at 1.3 V and 600 °C in the steam electrolysis mode while maintaining excellent durability for over 1000 h.

25 ENERGY STORAGE↗
DOE OSTI2025

Upgrades of the ATLAS zero degree calorimeter system for Run 3 at the Large Hadron Collider

Experimental studies of ultra-relativistic heavy ion collisions at the Large Hadron Collider (LHC) depend crucially on Zero Degree Calorimeters (ZDCs) that measure neutrons produced at near-beam rapidity in nucleus-nucleus collisions. In hadronic nuclear collisions these neutrons are mainly spectator neutrons, those that do not scatter from opposing nucleons during the collision. As a result, the ZDCs provide a vital probe of heavy ion collision geometry. The ZDCs are also essential in the study of ultra-peripheral collisions that are initiated by photons associated with the electric fields of one or both nuclei. Coherent photon emission typically leaves the photon emitter intact, making the observation of no ZDC signal, on one or both sides, a tag of such processes. The ATLAS ZDCs, built prior to Run 1, were substantially upgraded for LHC Run 3. The primary upgrades included replacement of the quartz Cherenkov radiator with H_2-doped fused silica rods; installation of fast air-core signal cables between the ZDC and the ATLAS USA15 cavern; a new LED-based calibration system; and new electronics implemented for readout and fully-digital triggering. The ZDCs were also augmented with new “Reaction Plane Detectors” (RPDs) designed to measure the transverse centroid of multi-neutron showers to allow event-by-event reconstruction of the directed-flow plane in nuclear collisions. The Run 3 ZDC detectors, including the RPDs, are described in detail with emphasis on aspects that are new for Run 3.

43 PARTICLE ACCELERATORS↗