SEARCH · Search NASA

Results for “memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 739 records · Page 41

All sources NASA NTRS DOE OSTI

DOE OSTI2019

In-Place Zero-Space Memory Protection for CNN

Convolutional Neural Networks (CNN) are being actively explored for safetycritical applications such as autonomous vehicles and aerospace, where it is essential to ensure the reliability of inference results in the presence of possible memory faults. Traditional methods such as error correction codes (ECC) and Triple Modular Redundancy (TMR) are CNN-oblivious and incur substantial memory overhead and energy cost. This paper introduces in-place zero-space ECC assisted with a new training scheme weight distribution-oriented training. The new method provides the first known zero space cost memory protection for CNNs without compromising the reliability offered by traditional ECC.

Guan, Hui↗

DOE OSTI2020

Shape memory polymer foams for endovascular therapies

A system for occluding a physical anomaly. One embodiment comprises a shape memory material body wherein the shape memory material body fits within the physical anomaly occluding the physical anomaly. The shape memory material body has a primary shape for occluding the physical anomaly and a secondary shape for being positioned in the physical anomaly.

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2020

TriC: Distributed-memory Triangle Counting by Exploiting the Graph Structure

Graph analytics has emerged as an important tool in the analysis of large scale data from diverse application domains such as social networks, cyber security and bioinformatics. Counting the number of triangles in a graph is a fundamental kernel with several applications such as detecting the community structure of a graph or in identifying important vertices in a graph. The ubiquity of massive datasets is driving the need to scale graph analytics on parallel systems. However, numerous challenges exist in efficiently parallelizing graph algorithms, especially on distributed-memory systems. Irregular memory accesses and communication patterns, low computation to communication ratios, and the need for frequent synchronization are some of the leading challenges. In this paper, we present TriC, our distributed-memory implementation of triangle counting in graphs using the Message Passing Interface (MPI), as a submission to the 2020 GraphChallenge competition. Using a set of synthetic and real-world inputs from the challenge, we demonstrate a speedup of up to 90x relative to previous work on 32 processor-cores of a NERSC Cori node. We also provide details from distributed runs with up to8192 processes along with strong scaling results. The observations presented in this work provide an understanding of the system-level bottlenecks at scale that specifically impact sparse-irregular workloads and will therefore benefit other efforts to parallelize graph algorithms.

Halappanavar, Mahantesh↗

DOE OSTI2020

Memory page access counts based on page refresh

A processing system tracks counts of accesses to memory pages using a set of counters located at the memory module that stores the pages, wherein the counts are adjusted at least in part based on refreshes of the memory pages. This approach allows a processing system to efficiently maintain the counts with relatively small counters and with relatively low overhead. Furthermore, the rate at which the counters are adjusted, relative to the page refreshes, is adjustable, so that the access counts are useful for a wide variety of application types.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2021

Athena: High-Performance Sparse Tensor Contraction Sequence on Heterogeneous Memory

Sparse tensor contraction sequence has been widely employed in many fields, such as chemistry and physics. However, how to efficiently implement the sequence faces multiple challenges, such as redundant computations and memory operations, massive memory consumption, and inefficient utilization of hardware. To address the above challenges, we introduce Athena, a high-performance framework for SpTC sequences. Athena introduces new data structures, leverages emerging Optane-based heterogeneous memory (HM) architecture, and stage parallelism. In particular, Athena introduces shared hash table-represented sparse accumulator to eliminate unnecessary input processing and data migration; Athena uses a novel data-semantic guided dynamic migration solution to make the best use of the Optane-based HM for high performance; Athena also co-runs execution phases with different characteristics to enable high hardware utilization. Evaluating with 12 datasets, we show that Athena brings 327-7362× speedup over the state-of-the-art SpTC algorithm. With the dynamic data placement guided by data semantics, Athena brings performance improvement on Optane-based HM over a state-of-the-art software-based data management solution, a hardware-based data management solution, and PMM-only by 1.58×, 1.82×, and 2.34× respectively.

Liu, Jiawen↗

DOE OSTI2021

Flexible optimized data handling in systems with multiple memories

Methods and systems for optimizing an application for a computing system having multiple distinct memory locations that are interconnected by one or more communication channels include determining one or more data handling properties for a data region in an application. One or more data handling policies for the data region are determined based on the one or more data handling properties. Data setup costs are determined for a scope in the application that uses the data region in different memory locations based on the one or more data handling properties. The application is optimized in accordance with the one or more data handling policies and the data setup costs for the different memory locations.

Chen, Tong↗

DOE OSTI2021

Speculative instruction wakeup to tolerate draining delay of memory ordering violation check buffers

A technique for speculatively executing load-dependent instructions includes detecting that a memory ordering consistency queue is full for a completed load instruction. The technique also includes storing data loaded by the completed load instruction into a storage location for storing data when the memory ordering consistency queue is full. The technique further includes speculatively executing instructions that are dependent on the completed load instruction. The technique also includes in response to a slot becoming available in the memory ordering consistency queue, replaying the load instruction. The technique further includes in response to receiving loaded data for the replayed load instruction, testing for a data mis-speculation by comparing the loaded data for the replayed load instruction with the data loaded by the completed load instruction that is stored in the storage location.

Kalamatianos, John↗

DOE OSTI2021

Comparing LLC-Memory Traffic between CPU and GPU Architectures

The cache hierarchy in modern CPUs and GPUs is becoming increasingly complex, which makes understanding the handshake between the memory access patterns and the cache hierarchy difficult. Moreover, the details of different cache policies are not publicly available. Therefore, the research community relies on observation to understand the relationship between memory access patterns and cache hierarchy. Our previous studies delved into the different microarchitectures of Intel CPUs. In this study, GPUs from NVIDIA and AMD are considered. Even though the execution models in CPUs and GPUs are distinct, this study attempts to correlate the behavior of the cache hierarchy of CPUs and GPUs. Using the knowledge gathered from studying Intel CPUs, the similarities and dissimilarities between CPUs and GPUs are identified. Through model evaluation, this study provides a proof of concept that traffic between last-level cache and memory can be predicted for sequential streaming and strided access patterns on GPUs.

Monil, M. A. H.↗

DOE OSTI2022

Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides

Switchable antiferromagnetic (AFM) memory devices are provided based on magnetically intercalated transition metal dichalcogenides (TMDs) of the form AxMC2, where A is a magnetic element of stoichiometry x between 0 and 1, M is a transition metal of stoichiometry 1, and C is a chalcogen of stoichiometry 2. Memory storage is achieved by fabricating these materials into crosses of two or more bars and driving DC current pulses along the bars to rotate the AFM order to a fixed angle with respect to the current pulse. Application of current pulses along different bars can switch the AFM order between multiple directions. Standard resistance measurements can detect the orientation of the AFM order as high or low resistance states. The state of the device can be set by the input current pulses, and read-out by the resistance measurement, forming a non-volatile, AFM memory storage bit.

Analytis, James G.↗

DOE OSTI2022

Shape memory polymer foams for endovascular therapies

59 BASIC BIOLOGICAL SCIENCES↗

DOE OSTI2023

Flexible optimized data handling in systems with multiple memories

Chen, Tong↗

DOE OSTI2021

High-Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene

Synaptic devices with linear high-speed switching can accelerate learning in artificial neural networks (ANNs) embodied in hardware. Conventional resistive memories however suffer from high write noise and asymmetric conductance tuning, preventing parallel programming of ANN arrays. Electrochemical random-access memories (ECRAMs), where resistive switching occurs by ion insertion into a redox-active channel, aim to address these challenges due to their linear switching and low noise. ECRAMs using 2D materials and metal oxides however suffer from slow ion kinetics, whereas organic ECRAMs enable high-speed operation but face challenges toward on-chip integration due to poor temperature stability of polymers. Here, ECRAMs using 2D titanium carbide (Ti 3 C 2 T x ) MXene that combine the high speed of organics and the integration compatibility of inorganic materials in a single high-performance device are demonstrated. These ECRAMs combine the speed, linearity, write noise, switching energy, and endurance metrics essential for parallel acceleration of ANNs, and importantly, they are stable after heat treatment needed for back-end-of-line integration with Si electronics. The high speed and performance of these ECRAMs introduces MXenes, a large family of 2D carbides and nitrides with more than 30 stoichiometric compositions synthesized to date, as promising candidates for devices operating at the nexus of electrochemistry and electronics.

2D materials↗

DOE OSTI2023

Distributed Quantum Computing with Photons and Atomic Memories

The promise of universal quantum computing requires scalable single- and inter-qubit control interactions. Currently, three of the leading candidate platforms for quantum computing are based on superconducting circuits, trapped ions, and neutral atom arrays. However, these systems have strong interaction with environmental and control noises that introduce decoherence of qubit states and gate operations. Alternatively, photons are well decoupled from the environment and have advantages of speed and timing for quantum computing. Photonic systems have already demonstrated capability for solving specific intractable problems like Boson sampling, but face challenges for practically scalable universal quantum computing solutions because it is extremely difficult for a single photon to “talk” to another deterministically. Here, a universal distributed quantum computing scheme based on photons and atomic-ensemble-based quantum memories is proposed. Taking the established photonic advantages, two-qubit nonlinear interaction is mediated by converting photonic qubits into quantum memory states and employing Rydberg blockade for the controlled gate operation. Spatial and temporal scalability of this scheme is demonstrated further. Furthermore, these results show photon-atom network hybrid approach can be a potential solution to universal distributed quantum computing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

Progress toward picosecond on-chip magnetic memory

Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

42 ENGINEERING↗

DOE OSTI2022

An Accurate, Error-Tolerant, and Energy-Efficient Neural Network Inference Engine Based on SONOS Analog Memory

In this work, we demonstrate SONOS (silicon-oxide-nitrideoxide- silicon) analog memory arrays that are optimized for neural network inference. The devices are fabricated in a 40nm process and operated in the subthreshold regime for in-memory matrix multiplication. Subthreshold operation enables low conductances to be implemented with low error, which matches the typical weight distribution of neural networks, which is heavily skewed toward near-zero values. This leads to high accuracy in the presence of programming errors and process variations. We simulate the end-to-end neural network inference accuracy, accounting for the measured programming error, read noise, and retention loss in a fabricated SONOS array. Evaluated on the ImageNet dataset using ResNet50, the accuracy using a SONOS system is within 2.16% of floating-point accuracy without any retraining. The unique error properties and high On/Off ratio of the SONOS device allow scaling to large arrays without bit slicing, and enable an inference architecture that achieves 20 TOPS/W on ResNet50, a >10× gain in energy efficiency over state-of-the-art digital and analog inference accelerators.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2019

A Themodynamically Consistent Fractional Visco-Elasto-Plastic Model with Memory-Dependent Damage for Anomalous Materials

We develop a thermodynamically consistent, fractional visco-elastoplastic model coupled with damage for anomalous materials. The model utilizes Scott-Blair rheological elements for both visco- elastic/plastic parts. The constitutive equations are obtained through Helmholtz free-energy potentials for Scott-Blair elements, together with a memory-dependent fractional yield function and dissipation inequalities. A memory-dependent Lemaitre-type damage is introduced through fractional damage energy release rates. For time-fractional integration of the resulting nonlinear system of equations, we develop a first-order semi-implicit fractional return-mapping algorithm. We also develop a finite-difference discretization for the fractional damage energy release rate, which results into Hankel-type matrix-vector operations for each time-step, allowing us to reduce the computational complexity from O(N 3 ) to O(N 2 ) through the use of Fast Fourier Transforms. Our numerical results demonstrate that the fractional orders for visco-elasto-plasticity play a crucial role in damage evolution, due to the competition between the anomalous plastic slip and bulk damage energy release rates.

36 MATERIALS SCIENCE↗

NASA NTRS2018

One Time Programmable Antifuse Memory Based on Bulk Junctionless Transistor

One time programmable (OTP) antifuse base memory is demonstrated based on a bulk junctionless gate-all-around (GAA) nanowire transistor technology. The presented memory consists of a single transistor (1T) footprint without any process modification. The source/drain (S/D) and gate respectively become bit line and word line where the antifuse is formed by oxide breakdown across the gate and the channel. The channel is connected directly to the bit line due to junctionless S/D and inherently isolated from the neighboring cell by the GAA channel. Therefore, an array of 1T antifuse OTP can be a candidate for the sub-5-nanometer technology node.

Antifuse↗

DOE OSTI2023

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Abstract Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10 −4 –10 −3 . This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO 2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗