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At least 739 records · Page 41

Effect of Siloxane Ring Strain and Cation Charge Density on the Formation of Coordinately Unsaturated Metal Sites on Silica: Insights from Density Functional Theory (DFT) Studies

Amorphous silica (SiO 2 ) is commonly used as a support in heterogeneous catalysis. However, due to the structural disorder and temperature induced change of surface morphology, the structures of silica supported metal catalysts are difficult to determine. Most studies are primarily focused on understanding the interactions of different types of surface hydroxyl groups with metal ions. In comparison, the effect of siloxane ring size on the structure of silica supported metal catalysts and how it affects catalytic activity is poorly understood. Here, we have used density functional theory calculations to understand the effect of siloxane ring strain on structure and activity of different monomeric Lewis acid metal sites on silica. In particular, we have found that large siloxane rings favor strong dative bonding interaction between metal ion and surface hydroxyls, leading to the formation of high-coordinate metal sites. In comparison, metal-silanol interaction is weak in small siloxane rings, resulting in low-coordinate metal sites. The physical origin of this size dependence is associated with siloxane ring strain, and, a correlation between metal-silanol interaction energy and ring strain energy has been observed. In addition to ring strain, the strength of the metal-silanol interaction also depends on the positive charge density of the cations. In fact, a correlation also exists between metal-silanol interaction energy and charge density of several first-row transition and post-transition metals. The theoretical results are compared with the EXAFS data of monomeric Zn(II) and Ga(III) ions grafted on silica. In conclusion, the molecular level insights of how metal ion coordination on silica depends on siloxane ring strain and cation charge density will be useful in the synthesis of new catalysts.

36 MATERIALS SCIENCE↗

High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region

Formation of large-grain (≥30 μm) Ge crystals on insulating substrates is strongly desired to achieve high-speed thin-film transistors. For this purpose, we propose the methods of Sn-doping into amorphous-Ge combined with rapid-thermal-annealing (RTA) in the solid-liquid coexisting temperature region for the Ge-Sn alloy system. The densities of micro-crystal-nuclei formed in this temperature region become low by tuning the RTA temperature close to the liquidus curve, which enhances the lateral growth of GeSn. Thanks to the very small segregation coefficient of Sn, almost all Sn atoms segregate toward edges of the stripes during growth. Agglomeration of GeSn degrades the surface morphologies; however, it is significantly improved by lowering the initial Sn concentration. As a result, pure Ge with large crystal grains (∼40 μm) with smooth surface are obtained by optimizing the initial Sn concentration as low as 3 ∼ 5%. Lateral growth lengths are further increased through decreasing the number of nuclei in stripes by narrowing stripe width. In this way, high-crystallinity giant Ge crystals (∼200 μm) are obtained for the stripe width of 3 μm. This “Si-seed free” technique for formation of large-grain pure Ge crystals is very useful to realize high-performance thin-film devices on insulator.

36 MATERIALS SCIENCE↗

Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ecology and thermal inactivation of microbes in and on interplanetary space vehicle components

The uses of scanning electron microscopy in assessing changes that occur in spores exposed to wet and dry heat cycles at elevated temperatures were examined. Several species of Bacillus and other nonspore-forming species of organisms were used for the experiment. Surface morphology of viable and nonviable organisms was clearly detectable by this method, making it a potentially useful technique for investigating microbial inactivation on space vehicle surfaces and components. Micrographs of the spores and bacterial cells are provided.

Campbell, J. E.↗

Effects of space environment on structural materials - A preliminary study and development of materials characterization protocols

A preliminary study of materials exposed in space in LEO for nearly six years in the NASA Long-Duration Exposure Facility is presented. It is demonstrated that it will be necessary to isolate surface debris and reaction products from materials exposed in space. Replication techniques originally designed for electron microscopy examination of surfaces can be applied to lift off and isolate such surface features. Debris and reaction products were examined through a variety of analytical techniques, including the surface morphology by SEM, and internal microstructures by STEM and TEM, EDS, and SAD. The results illustrate the role that atomic oxygen and micrometeorites play in surface alteration and reaction in LEO space environments, as well as the role of debris created from other proximate materials.

Miglionico, C.↗

Chemo-chromic Pd-V{sub 2}O{sub 5} Sensors for Passive Hydrogen Detection in Nuclear Containments - 18268

The ability to detect and monitor hydrogen gas efficiently in process and storage facilities, handling nuclear material, is crucial to ensuring their safety. The accumulation of hydrogen gas, above the lower flammable limit (LFL), in a nuclear waste containment is a concern since it creates the potential for a hydrogen-air explosion to occur, which could lead to a loss of containment and result in the uncontrolled release of radioactive material into the surrounding environment. The events that took place at Fukushima Daiichi Nuclear Power Plant highlighted the vulnerability of conventional hydrogen detection to extreme events, where power may be lost. In the present work, chemo-chromic hydrogen sensors have been fabricated, using transition metal oxide thin films, to provide eye-readable detection systems that would be resilient to plant power failure. Vanadium oxide (V{sub 2}O{sub 5}) films were prepared on quartz glass substrates by sol-gel deposition and sensitized with a palladium (Pd) catalyst, deposited by electron beam evaporation. When exposed to hydrogen, the Pd catalyst dissociates H{sub 2} to H atoms, which diffuse into the V{sup (V)}{sub 2}O{sub 5} forming a hydrogen-vanadium metal bronze, H{sub 2}V{sup (III)}{sub 2}O{sub 5}, resulting in a noticeable colour change from orange to dark green. To assess their viability for nuclear safety applications, these sensors have been irradiated to total doses between 5 and 250 kGy using a Co-60 gamma isotope irradiator. The results suggest that gamma irradiation, at the levels examined, has an effect on the initial colour of the V{sub 2}O{sub 5} and Pd-V{sub 2}O{sub 5} thin films with decreased transmittance above 540 nm. The orange starting colour darkened and developed a green tone, with the degree of colour change depending on the applied total dose. Changes in surface morphology and characteristics have been examined by using Scanning Electron Microscopy (SEM) and Raman spectroscopy. High level (250 kGy) gamma radiation exposure begins to produce surface degradation on V{sub 2}O{sub 5} thin films; however this behaviour is not observed for films that are also coated with palladium. Chemo-chromic properties of both un-irradiated and irradiated Pd-V{sub 2}O{sub 5} thin films were determined by examining their optical transmittance, using UV-vis spectroscopy, under exposure to a 4% H{sub 2}-N{sub 2} gas mixture. Exposure to gamma radiation has been found to have negligible effect upon colour change behaviour after 30 minutes exposure to hydrogen gas. The results suggest that the thin film V{sub 2}O{sub 5} sensitised with Pd is a plausible technique for application in the monitoring of hydrogen gas in low-level gamma radiation environments. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Formation of laser-induced periodic surface structures on niobium by femtosecond laser irradiation

The surface morphology of a Niobium sample, irradiated in air by a femtosecond laser with a wavelength of 800 nm and pulse duration of 100 fs, was examined. The period of the micro/nanostructures, parallel and perpendicularly oriented to the linearly polarized fs-laser beam, was studied by means of 2D Fast Fourier Transform analysis. The observed Laser-Induced Periodic Surface Structures (LIPSS) were classified as Low Spatial Frequency LIPSS (periods about 600 nm) and High Spatial Frequency LIPSS, showing a periodicity around 300 nm, both of them perpendicularly oriented to the polarization of the incident laser wave. Moreover, parallel high spatial frequency LIPSS were observed with periods around 100 nm located at the peripheral areas of the laser fingerprint and overwritten on the perpendicular periodic gratings. The results indicate that this method of micro/nanostructuring allows controlling the Niobium grating period by the number of pulses applied, so the scan speed and not the fluence is the key parameter of control. A discussion on the mechanism of the surface topology evolution was also introduced.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Exceptionally crystalline and conducting acid doped polyaniline films by level surface assisted solution casting approach

Emeraldine salt form of polyaniline (PANI) was synthesized by chemical oxidative polymerisation method using ammonium persulfate as oxidant. Resultant emeraldine salt form of PANI was dedoped using ammonia solution and then re-doped with camphor sulphonic acid (CSA), naphthaline sulphonic acid (NSA), hydrochloric acid (HCl), and m-cresol. Thin films of these doped PANI samples were deposited on glass substrates using solution casting method with m-cresol as solvent. A level surface was employed to get homogeneous thin films of uniform thickness. Detailed X-ray diffraction studies have shown that the films are exceptionally crystalline. The crystalline peaks observed in the XRD spectra can be indexed to simple monoclinic structure. FTIR and Raman spectroscopy studies provide convincing explanation for the exceptional crystallinity observed in these polymer films. FESEM and AFM images give better details of surface morphology of doped PANI films. The DC electrical conductivity of the samples was measured using four point probe technique. It is seen that the samples also exhibit quite high DC electrical conductivity, about 287 S/cm for CSA doped PANI, 67 S/cm for NSA doped PANI 65 S/cm for HCl doped PANI, and just below 1 S/cm for m-cresol doped PANI. Effect of using the level surface for solution casting is studied and correlated with the observed crystallinity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The role of support morphology on the performance of Cu/ZnO-catalyst for hydrogenation of CO{sub 2} to methanol

The effects of SBA-15 support morphology on the activity of Cu/ZnO catalyst in the hydrogenation of CO{sub 2} to methanol was investigated. In the hydrogenation of CO{sub 2} to methanol at 210°C, 2.25 MPa, H{sub 2}/CO{sub 2} ratio of three remarkable difference was obtained using Cu/ZnO catalyst supported on SBA-15 with different morphology. The catalysts were characterized using N{sub 2}-adsorption, field emission scanning microscopy (FESEM/EDX), transmission electron microscopy (HRTEM), and temperature-programmed reduction (TPR). Characterization of the catalyst showed that support morphology, surface area, metals dispersion, and reducibility influenced the catalytic performance. On the fiber-shaped SBA-15, copper dispersion was 29 % whereas on the spherical-shaped SBA-15, the dispersion was 20 %. The experimental results showed that the catalyst supported over fiber-shaped SBA-15 exhibit higher CO{sub 2} conversion (13.96 %) and methanol selectivity (91.32 %) compare to catalyst supported over spherical-shaped SBA-15.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The influence of fusion-relevant D 2 -0.1He plasma on Be-W mixed-materials

We report compositionally homogeneous mixed-material layers of Be and W, ∼2 μm thick, and of various W contents (spanning 0–100 at.% W), are produced by thermionic vacuum arc deposition. The layers are exposed to low energy (∼50 eV), high ion flux (6–8 × 10 22 m −2 s −1 ) D 2 -0.1He (10% He) mixed species plasma at 473 K and 1073 K to simulate ITER-like first wall and divertor plasma-material interaction. Surface morphological and compositional analysis is conducted prior and subsequent to plasma exposure. The action of the plasma produces almost complete depletion of Be from the near surface, and this is found regardless of the exposure temperature or initial composition. In the exposure case of 473 K, thermal desorption spectrometry reveals decreased D retention in W rich compositions compared to similar exposure in D 2 plasma without He, but no discernable difference is noted in Be rich compositions. At 1073 K, surface enrichment in W, by depletion of the Be, results in He induced W “fuzz” structures for all Be-W compositions explored.

36 MATERIALS SCIENCE↗

Long-Time Feedback in the Formation of Self-Organized Nanostructures upon Multipulse Femtosecond Laser Ablation

The self-organization feedback in nanostructures (ripples) formation upon femtosecond laser ablation is investigated in detail, with particular emphasis on its dynamics. We study the influence of time separation between successive pulses on both the size and complexity of the nanostructures and on the size of the modified surface area. By varying the pulse separation between 1 ms and 1 s (rep. rate between 1 kHz and 1 Hz), we find that both modified area as well as pattern feature size and complexity decrease with increasing pulse-to-pulse delay, indicating that the coupling efficiency between laser and target increases with increasing repetition rate. Structure formation resulting from surface instability, induced by the laser impact, suggests that the laser-induced instability results in a transient increase of absorption probability, slowly decaying in time. The stronger this transient absorption, the better is the coupling for the succeeding pulse, thus resulting in a positive feedback. Experimental results indicate that the lifetime of the feedback can last up to one second and longer.In addition, a persisting modulated spatial modification of crystalline properties is observed well beyond the ablation spot, though no apparent influence on surface morphology is seen. Mapping the band-to-band photoluminescence from silicon indicates a dramatic increase of non-radiative recombination compared to unaffected material.

36 MATERIALS SCIENCE↗

Investigations of protons passing through the CR-39/PM-355 type of solid state nuclear track detectors

Solid State Nuclear Track Detectors of the CR-39/PM-355 type were irradiated with protons with energies in the range from 0.2 to 8.5 MeV. Their intensities and energies were controlled by a Si surface barrier detector located in an accelerator scattering chamber. The ranges of protons with energies of 6–7 MeV were comparable to the thickness of the PM-355 track detectors. Latent tracks in the polymeric detectors were chemically etched under standard conditions to develop the tracks. Standard optical microscope and scanning electron microscopy techniques were used for surface morphology characterization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Pulsed laser deposition of single layer, hexagonal boron nitride (white graphene, h-BN) on fiber-oriented Ag(111)/SrTiO{sub 3}(001)

We report on the growth of 1–10 ML films of hexagonal boron nitride (h-BN), also known as white graphene, on fiber-oriented Ag buffer films on SrTiO{sub 3}(001) by pulsed laser deposition. The Ag buffer films of 40 nm thickness were used as substitutes for expensive single crystal metallic substrates. In-situ, reflection high-energy electron diffraction was used to monitor the surface structure of the Ag films and to observe the formation of the characteristic h-BN diffraction pattern. Further evidence of the growth of h-BN was provided by attenuated total reflectance spectroscopy, which showed the characteristic h-BN peaks at ∼780 cm{sup −1} and 1367.4 cm{sup −1}. Ex-situ photoelectron spectroscopy showed that the surface of the h-BN films is stoichiometric. The physical structure of the films was confirmed by scanning electron microscopy. The h-BN films grew as large, sub-millimeter sheets with nano- and micro-sheets scattered on the surface. The h-BN sheets can be exfoliated by the micromechanical adhesive tape method. Spectral analysis was performed by energy dispersive spectroscopy in order to identify the h-BN sheets after exfoliation. The use of thin film Ag allows for reduced use of Ag and makes it possible to adjust the surface morphology of the thin film prior to h-BN growth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Formation of zinc oxide films using submicron zinc particle dispersions

The thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x-ray diffraction and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes were observed for films annealed to 400 °C or higher, where nanoflakes, nanoribbons, nanoneedles and nanorods were formed as a result of stress induced fractures arising in the ZnO outer shell due to differential thermal expansion between the metallic Zn core and the ZnO shell. Mass transport occurs through these defects due to the high vapor pressure for metallic Zn at temperatures above 230 °C, whereupon the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. The Zn particles were also incorporated into zinc indium oxide precursor solutions to form thin film transistor test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

Cr-doped ZnSe single crystals were grown by a self-seeded physical vapor transport technique in both vertical (stabilized) and horizontal configurations. The source materials were mixtures of ZnSe and CrSe. Growth temperatures were in the range of 1140-1150 C and the furnace translation rates were 1.9-2.2 mm/day. The surface morphology of the as-grown crystals was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Different features of the as-grown surface of the vertically and horizontally grown crystals suggest that different growth mechanisms were involved in the two growth configurations. The [Cr] doping levels were determined to be in the range of 1.8-8.3 x 10 (exp 19) cm (exp -3) from optical absorption measurements. The crystalline quality of the grown crystals were examined by high-resolution triple-crystal X-ray diffraction (HRTXD) analysis.

Su, Ching-Hua↗

Prospects for the pulsed electrodeposition of zinc-oxide hierarchical nanostructures

Studies into the effect of the conditions of pulsed electrodeposition upon the structural and sub-structural parameters, morphology, and optical properties of ZnO-crystallite arrays make it possible to establish those parameters optimal for the formation of ZnO nanorods oriented normally to the substrate surface. These parameters are as follows: an electrolyte temperature of 70-85 Degree-Sign C, duty cycle of 40%, and a pulse-repetition frequency of 2 Hz. The nanorod dimensions can be varied by heating or cooling the electrolyte within the above-indicated limits; as a result, small-sized nanorods can be electrically deposited on the surface of larger nanorods to form hierarchical nanostructures. By varying the duty cycle, it is possible to modify the surface morphology of the arrays up to the formation of mesoporous ZnO networks. In combination with ZnO nanorods, such networks are capable of forming hierarchical nanostructures with large specific areas.

36 MATERIALS SCIENCE↗

Analysis of Abrasive Blasting of DOP-26 Iridium Alloy

The effects of abrasive blasting on the surface geometry and microstructure of DOP-26 iridium alloy (Ir-0.3% W-0.006% Th 0.005% Al) have been investigated. Abrasive blasting has been used to control emissivity of components operating at elevated temperature. The effects of abrasive blasting conditions on surface morphology were investigated both experimentally and by numerical modeling. The simplified model, based on finite element analysis of a single angular particle impacting on Ir alloy disk, calculates the surface deformation and residual strain distribution. The experimental results and modeling results both indicate that the surface geometry is not sensitive to the abrasive blast process conditions of nozzle pressure and standoff distance considered in this study. On the other hand, the modeling results suggest that the angularity of the abrasive particle has an important role in determining surface geometry, which in turn, affects the emissivity. Abrasive blasting causes localized surface strains and localized recrystallization, but it does not affect grain size following extended exposure at elevated temperature. The dependence of emissivity of the DOP-26 alloy on mean surface slope follows a similar trend to that reported for pure iridium.

36 MATERIALS SCIENCE↗