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Results for “High Frequency”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

High-frequency direct current bulk capacitors with interleaved busbar packages

Presented are electrical capacitors with interleaved busbar architectures, methods for making/operating such capacitors, and electric-drive vehicles equipped with such capacitors. A bulk capacitor includes multiple capacitor devices disposed within an outer housing and operable to modify electric current transmitted between a power source and an electrical load. An interleaved busbar package is interposed between the capacitor devices and outer housing. The interleaved busbar package includes a first busbar plate that electrically connects to first terminals of the capacitor devices and defines a busbar pocket. A second busbar plate is seated within the busbar pocket and electrically connects to second terminals of the capacitor devices. The second busbar plate includes a capacitor basin that seats therein the capacitor devices. An isolator sheet is interleaved between and electrically insulates the first and second busbar plates. The capacitor devices and interleaved busbar package may be partially submerged in an epoxy endfill composition.

42 ENGINEERING↗
DOE OSTI2021

High-frequency vacuum electronic device

A self-assembling element fabricated using integrated circuit techniques may provide a small diameter helical conductor surrounding an electron beam for the construction of a vacuum electronic device such as a traveling-wave tube for terahertz scale signal.

van der Weide, Daniel W.↗
DOE OSTI2021

Near net shape bulk laminated silicon iron electric steel for improved electrical resistance and low high frequency loss

The invention involves producing discontinuous, flake-shaped particles of a soft magnetic material, coating the flake-shaped particles with an electrically insulating coating, and consolidating the coated flaked-shaped particles to form a soft magnetic bulk shape. The consolidated bulk shape can comprise a layer or a simple or complex 3D magnet part shape, which has a consolidated layered microstructure that includes laminated soft magnetic regions that are substantially encapsulated by an electrical insulating layer to increase the resistivity of soft magnetic material, especially when used in silicon iron magnet parts.

Cui, Jun↗
DOE OSTI2022

Ultracapacitors with high frequency response

An electric double layer capacitor (EDLC) is disclosed including: a first electrode including a first current collector and first plurality of carbon nanotubes (CNTs) disposed substantially directly upon the first current collector; a second electrode comprising a second current collector and second plurality of CNTs disposed substantially directly upon the second current collector; and an electrolyte disposed between and in contact with (e.g., wetting) the first and second electrodes. In some embodiments, the EDLC is configured to have a capacitive frequency window comprising about 1 Hz to about 50 Hz.

Brambilla, Nicolò Michele↗
DOE OSTI2022

Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit

A vertical insulated-gate field effect transistor includes a semiconductor substrate and a gate electrode on a first surface thereof. This gate electrode has a plurality of eight (or more) sided openings extending therethrough. Each of these openings has eight (or more) sidewalls, including a first plurality of sidewalls that are flat relative to a center of the opening and second plurality of sidewalls that are either flat or concave relative to the center of the opening. A source electrode is also provided, which extends into the openings. This source electrode may ohmically contact a source region within the semiconductor substrate. If the field effect transistor is a JBSFET, the source electrode may also form a Schottky rectifying junction with a drift region within the semiconductor substrate.

Baliga, Bantval Jayant↗