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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 757 records · Page 42
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

X-ray photoelectron spectroscopy and rotating disk electrode measurements of smooth sputtered Fe-N-C films

Electrocatalysts for the oxygen reduction reaction (ORR) based on complexes of iron and nitrogen in a carbon matrix (Fe-N-C) are a promising alternative to platinum group metal (PGM) based catalysts in polymer electrolyte membrane (PEM) fuel cells. Further improvements of Fe-N-C catalysts would benefit from model thin film studies of activity and stability of catalytic sites, but synthesis of Fe-N-C model thin films is challenging. Here we report on synthesis and characterization of Fe-N-C thin films produced by co-sputtering iron and carbon in a reactive nitrogen atmosphere onto removable glassy carbon rotating disk electrode (RDE) tips. Scanning electron microscopy (SEM) measurements indicate that the Fe-N-C films deposited at high temperature are smoother than the films annealed at high temperature. Electrocatalytic activity measured on the thin Fe-N-C films is greater for both high-temperature samples than for the room-temperature sample. From the analysis of X-ray photoelectron spectroscopy (XPS) data, exposure of the films to high temperatures results in increased graphitization of the carbon with the Fe-N-C films, and increased relative amount of graphitic and hydrogenated nitrogen species. Overall the results of this study demonstrate the feasibility of a thin film model system approach for studying active sites in PGM-free catalysts.

14 SOLAR ENERGY↗
DOE OSTI2017

Vertically oriented ZrO 2 –TiO 2 –Nb 2 O 5 –Al 2 O 3 mixed nanopatterned bioceramics on Ti6Al7Nb implant assessed by laser spallation technique

Recently, reports on the fabrication of nonstructural configuration have generated scientific interest due to increased awareness of the oxide nanotubes in the biomedical implant field and other industrial approaches. In this paper, highly ordered ZrO 2 –TiO 2 –Nb 2 O 5 –Al 2 O 3 nanotube arrays were grown by physical vapor deposition (PVD) of a zirconium layer on titanium-niobium alloy implant (IMPTi67) and succeeding anodic oxidation at a constant voltage (60 V) with exposure times ranging from 30 to 300 min. To crystallize the resulting mixed oxide nanotubes, heat treatment was also applied. The nanotubes were placed in an atmospheric furnace at temperatures ranging from 450 to 800 °C for 2 h. This treatment provided a morphological evolution was strongly influenced by the anodization time, where highly aligned bamboo-shaped oxide nanotubes (161 ± 44 nm in inside diameter and ~1 μm in length) were formed after 300 min of anodization. After annealing at temperature below 500 °C, the nano-array configuration remained stable and the average inner diameter decreased to around 40 nm. The effects of anodically fabrication time on the adhesion strength of four-phase multilayered mixed oxide nanotubes on anodized Zr/IMPTi67 surfaces assed by microscratch analysis. From the results, increasing the annealing temperature further to 800 °C fully destroyed the nanotubes and consequently the tubular arrangement was converted to a coarse grain structure. It was revealed that annealing at 450 °C for 2 h was the optimum conditions for stable nanotubular array generation, where the highest adhesion strength (shifted from 2595.59 to 2640.12 mN), microhardness (372 HV) and hydrophilicity (15 ± 1°) were recorded. It is notify that the adhesion strength of highly ordered mixed nanotubes was remarkably decreased after thermal treatment at 800 °C (1817.51 mN). Through the laser spallation analysis, the intrinsic adhesion strength of the Zr/IMPTi67 interface was found to be at 63 MPa, while the first stages of failure occurred at a stress state of 35 MPa. The adhesion of the film with the tubular structure proved to have a significantly larger adhesion strength of 246 MPa for the complete failure and 203 MPa for incipient stages of spallation. Finally, the considered surface modification can be an effective step in determining the interface strength between biomedical implants and the nanostructured coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The physical origin of heterogeneous solute clustering and nanoprecipitation at grain boundaries in ultrafine-grained immiscible alloys

Here, grain-boundary segregation effects on heterogeneous solute clustering and nanoprecipitation at low solute concentrations were investigated in sputter-deposited ultrafine-grained Ag-Cu alloy films. X-ray diffraction and scanning transmission electron microscopy revealed extended solubility of Cu in Ag matrix, accompanied by the formation of Cu-rich nanoprecipitates and solute clusters at grain boundaries and their junctions. Atomistic simulations further demonstrated that Cu solutes heterogeneously segregate to Ag GBs and form small clusters that grow into nuclei for Cu nanoprecipitates. These findings provide critical insights into the role of heterogeneous grain-boundary segregation in governing the phase separation pathways of immiscible nanocrystalline and ultrafine-grained alloys.

Heterogeneous segregation↗
DOE OSTI2023

Fabrication of superconducting Nb 3 Sn film by Co-sputtering

High-efficiency SRF cavities are the key technology to construct cost-effective CW SRF accelerators. Improvements in the efficiency of SRF cavities are realized by using novel materials, such as niobium-tin. Advances in niobium-tin coatings on the inner surface of SRF cavities showed the potential for this material to increase the operating temperature of the SRF cavity to above 4 K, leading to significant reduction of the capital and operating cost of SRF accelerators. Among the techniques used to apply the niobium-tin coating to the surface of the SRF cavity is sputtering. Old Dominion University, Jefferson Lab, and Fermilab are collaborating on developing an optimized niobium-tin coating of the inside surface of niobium SRF cavities using a recently-developed cylindrical sputtering system. This research will result in optimized sputtering coating techniques leading to high efficiency SRF structures.

42 ENGINEERING↗
DOE OSTI2025

Sputter deposition of ultrathick Bi coatings onto rotating substrates for inertial confinement fusion

Sputter-deposited Bi is a potential candidate material for the production of inertial confinement fusion (ICF) hohlraums, which are sphero-cylindrical canisters that serve as the housing for hydrogen-fuel-filled capsules in ICF implosions. The fabrication of hohlraums involves deposition onto rotating sphero-cylindrical substrates and, hence, requires an understanding of oblique angle deposition phenomena. Here, we systematically study the effect of dynamic substrate tilt on properties of Bi films deposited onto rotating planar substrates. Results show that film morphology, porosity, and electrical resistivity depend on substrate tilt. In comparison with films deposited onto substrates adhered to a stationary sample holder, films deposited on rotating substrates have more uniform microstructure with fewer void defects. Based on Monte Carlo simulations, these changes in film morphology and microstructure are attributed to averaging and geometric effects related to sample position and rotation. In conclusion, the fabrication of an ∼ 50-µm-thick Bi film on a rotating sphero-cylindrical mandrel demonstrates a significant step toward the production of Bi hohlraums.

Bismuth↗
DOE OSTI2019

Synthesis of Ni-Rich Thin-Film Cathode as Model System for Lithium Ion Batteries

We demonstrate a process to prepare model electrodes of the Ni-rich layered compound LiNi 0.6 Mn 0.2 Co 0.2 O 2 . These thin-film cathodes are compared with the composite materials to demonstrate the system is a viable platform for isolating interfacial phenomena between the electrolyte and active material without the influence of binders and conductive additives. The appropriate choice of heterolayers was found to influence the preferential orientation of the (101) and (104) planes relative to the (003) plane of the layered R-3m crystal structure, enhancing Li + diffusion and improving electrochemical performance. The addition of a Co interlayer between the Pt current collecting layer and alumina substrate increased the (101) and (104) texturing of the 500 nm Ni-rich film and allowed cells to deliver greater than 50% of their theoretical capacity. This work provides an architecture for isolating complex mechanisms of active materials that suffer from surface reconstruction and degradation in electrochemical cells.

25 ENERGY STORAGE↗
DOE OSTI2025

Ultrathin VO 2 Films on Functional Substrates

The metal–insulator transition (MIT) in vanadium dioxide (VO 2 ) thin films is strongly affected by grain size, thickness, and interfacial properties. Typically, a minimum thickness around 50 nm is required for VO 2 to exhibit a significant MIT when functional substrates like sapphire and silicon are used. Several works have shown that thin films below 20 nm, with up to 2–3 decades of change in the resistance across the MIT, can be achieved but require complex pre- or postprocessing of the samples. We show that predeposition substrate condition control facilitates the direct growth of VO 2 ultrathin 15 nm films, exhibiting a resistance change between 3 and 4 decades across the MIT. Our findings indicate that the interface between the film and the substrate is crucial in determining the initial growth layers and the structural evolution. With appropriate substrate surface treatment, the desired VO 2 MIT can be enhanced regardless of the substrate crystallographic orientation. Moreover, we propose a novel approach to obtain large resistance changes across the MIT in ultrathin VO 2 films by incorporating a predeposited 1.5 nm vanadium oxide buffer layer, thereby eliminating the need to use different materials or complex pre- or postprocessing of the samples. Here we also demonstrate that this method improves the transition of 25–50 nm VO 2 thin films on silicon substrates. Our study reveals a simple approach for direct growth of ultrathin VO 2 films exhibiting a significant MIT, which is commonly accepted unattainable over substrates of technological importance, such as sapphire and silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Enhancement of the ultraviolet photoluminescence of ZnO films: Coatings, annealing, and environmental exposure studies

To realize the many potential applications of ZnO films, it is vital to produce films with high optical quality that exhibit strong UV luminescence. By combining annealing at an optimal temperature followed by the deposition of a coating, one can achieve a significant enhancement of photoluminescence (PL). The effectiveness of the coating over time is a crucial point to be considered. Three types of coating materials were investigated: MgO, SiO 2 , and Al 2 O 3 . Due to its strong bond energy, MgO was found to be the most effective coating material for passivation of the surfaces of the ZnO films; SiO 2 was the second best. The UV-PL intensity of MgO coated ZnO was found to increase by a factor of 52 relative to an uncoated film. The effectiveness of the coatings exhibited a linear correlation with their bond energies and is discussed in terms of competing mechanisms to surface passivation such as the adsorption of OH-groups; these can act as surface traps and diminish the UV-PL intensity. Annealing at 900 °C prior to the deposition of the coating was found to be an important step in realizing the optimal performance of the coating due to the reduction of Zn interstitials accompanied by improved crystallinity. Exposure to the environment, up to 294 days, results in the degradation of the UV-PL of the MgO coated film; this effect was not observed for the film coated with SiO 2 . This effect is discussed in terms of the strong reactivity of MgO with environmental contaminants from the OH-groups.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Exploring leakage in dielectric films via automated experiments in scanning probe microscopy

Here electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). In this study, we use large field of view scanning to identify the position of localized conductive spots and develop an SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Using this approach, we observe the variable behaviors of the conductive spots in a 20-nm-thick ferroelectric Hf 0.54 Zr 0.48 O 2 film, where conductive spots disappear and reappear during continuous scanning. There are also fresh conductive spots that develop during scanning. The automated workflow is universal and can be integrated into a wide range of microscopy techniques, including SPM, electron microscopy, optical microscopy, and chemical imaging.

36 MATERIALS SCIENCE↗
DOE OSTI2022

TOF-SIMS analysis of decoherence sources in superconducting qubits

Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. Two-level system defects in the thin superconducting film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated through slight modifications in the processing and vacuum conditions. We find that when the Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species, such as niobium hydrides and carbides, are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impacts the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

The Gaussian nature of the band-edge of ZnO microcrystalline thin films

A straightforward analytical approach based on the derivative of the absorption coefficient is presented, which enables probing the nature of the band edge (BE) of ZnO microcrystalline films. The study was conducted via transmission experiments at temperatures of 77–532 K and repeated for samples annealed up to 1073 K. It was found that the derivative of the natural log of the BE absorption coefficient resulted in a Gaussian function. The Gaussian linewidth is used in the electron–phonon (e–p) interaction model to characterize the defect-state of the films. The BE of the as-grown film was found to exhibit no thermal dependence and no e–p coupling, indicative of a disordered crystal. Upon annealing and improvement of the film quality, the thermal phonons became more activated, but only above room temperature with a phonon energy of ~75 meV, while up to room temperature, the impact of phonons on the BE is insignificant. A disorder–order transition was determined to take place at an annealing temperature of ~673 K. X-ray diffraction concurs with these results. The study indicates that the prevalent defects are of structural nature due to the inherent granular morphology of the films. This defect was found to dominate the behavior of the BE even at the elevated temperature regime rather than thermal phonons.

36 MATERIALS SCIENCE↗
DOE OSTI2025

From prediction to experimental realization of ferroelectric wurtzite Al1− x Gd x N alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Structural characterization of highly alloyed (Al,Gd)N thin films

Highly alloyed (Al,Gd)N is of potential interest in a variety of applications, including neutron detection and in devices such as non-volatile memory. Gd has been shown to have very low equilibrium solubility in AlN at room temperature; however, non-equilibrium deposition techniques such as sputtering are able to deposit thin films, which incorporate large amounts of Gd. Here, we characterize a highly-alloyed (Al,Gd)N combinatorial thin film grown by RF sputtering on a GaN substrate, looking for any evidence of chemical or phase segregation or structural disorder in the films. Compositions with between 13% and 32% Gd (on a cation basis) were studied. No evidence was found for chemical or phase segregation in any studied composition. Higher degrees of Gd incorporation led to greater structural disorder in the film and a tendency toward amorphization; however, electron diffraction shows that the film does not become fully amorphous at any of the studied compositions, instead retaining textured local order even at 32% Gd. Electron energy loss spectra suggest that the material retains a locally wurtzite-like tetrahedral bonding environment at all studied compositions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Microstructural evolution of nanotwinned Al-Zr alloy with significant 9R phase

Aluminum (Al) alloys have a multitude of applications, notably in the automotive, aerospace and coating industries, yet they exhibit significantly lower mechanical strength than conventional steels. Nanotwins drastically improve mechanical strength while retaining ductility. However, the high SFE of Al largely prevents twinning. Here, we synthesize Al-Zr alloy films containing an abundance of incoherent twin boundaries and 9R phases. These alloys exhibit an extended solid solubility of Zr, retaining a columnar nanotwinned structure across all compositions. These films reach a hardness up to 4.2 GPa with 10 at% Zr and demonstrate the capacity for producing strong Al alloys with nanotwins.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ultralightweight Power System for Human-Portable Linac-Based X-Ray Sources

Industrial human-portable X-ray sources are widely used by security, nuclear safeguard, and defense agencies. However, the employed sources have significant energy, dose, size, weight, and power (SWaP) limitations, greatly affecting their practical application. RF linear accelerators (linacs) can serve as a flexible, reliable, and robust type of X-ray source if they can match the size, weight, cost, and imaging performance requirements of conventional ones. One of the most critical elements affecting these parameters is the high-voltage pulsed power supply system or modulator, which can make the largest contribution to the total weight and dimensions of the accelerator. Here, in this article, we present the design and demonstration results of a novel ultra lightweight power system based on a 24-kV solid-state Marx modulator for a hand-portable 0.15–2.0-MeV Ku -band linac-based X-ray source.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

I. Final Report for DOE SBIR Phase I Project DE-SC0013795 Final Report for DOE SBIR Phase I Project DE-SC0013795 Microtron-based Compact, Portable Gamma-Ray Source

Microtron-based Compact, Portable Gamma-Ray Source. The objective of Phase I of this project was to produce a conceptual design of a prototype compact microtron electron accelerator, which could be designed, built, and demonstrated in Phase II of the project. The conceptual design study included an analysis of the parameters of the microtron and its components, and the expected performance of the prototype microtron as a source of x-rays and/or RF neutrons in the MeV energy range. The major components of the microtron are the magnet, the accelerating system, the power system, the vacuum system, the control system, the beam extraction system and the targets to produce x-rays (and/or neutrons). Our objectives for the design of the prototype were for it to be compact, cost-effective, capable of producing high intensity x-ray (an/or neutron) fluxes. In addition, the prototype was to be easily assembled and disassembled so that components could be easily replaced. The main parameters for the prototype are the following: the range of electron kinetic energies, the output power, the RF frequency band (X-band, C-band, or S-Band), the type of injection (Type I or Type II), the magnet type, i.e. permanent magnet, electromagnet, or a hybrid combination of permanent and electromagnet. The results of the Phase I study and analysis for a prototype microtron are the following: The electron energy range can be varied from below 6 MeV to 9 MeV, the optimal frequency range is S-Band (2-4 GHz) RF frequency, Type II injection (described below), and the magnet type is the hybrid version. The prototype version will be capable of producing gamma ray doses of ~1800 R/min-m and neutron fluxes of up to ~6 x 10 10 n/s with appropriate targets. The results of the Phase I study and analysis are provided below. The proposed Phase II plan was to demonstrate the prototype at low beam power. In the subsequent Phase III, high power tests would be performed, and the design of commercial versions of microtrons with various energies, sizes and types would be produced and marketed, including a more compact and more portable 6 MeV battery-powered model that more closely meets the requirements in the original FOA topic description. In the course of the Phase I study, we also identified another microtron version, one that was larger (not compact) and more powerful than that of the Phase II prototype, which could serve as an intense source of photo- neutrons, up to 4 x 10 12 n/s for use in nuclear medicine, short-lived isotope production, or other applications. In addition, it could produce gamma dose rates up to 130 kR/min-m with a heavy metal bremsstrahlung target. The results and specifications of this were submitted to IPAC16 (Reference [12]) the paper is included in Addendum B. Because this version was beyond the scope of the Phase I project, there is no additional description in the Final Report.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

Recommended Practice for Use of Emissive Probes in Electric Propulsion Testing

Here, this article provides recommended methods for building, operating, and taking plasma potential measurements from electron-emitting probes in electric propulsion devices, including Hall thrusters, gridded ion engines, and others. The two major techniques, the floating point technique and the inflection point technique, are described in detail as well as calibration and error-reduction methods. The major heating methods are described as well as the various considerations for emissive probe construction. Lastly, special considerations for electric propulsion plasmas are addressed, including high-energy densities, ion flows, magnetic fields, and potential fluctuations. Recommendations for probe design and operation are provided.

33 ADVANCED PROPULSION SYSTEMS↗