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DOE OSTI2019

Atomic layer etching of SiO 2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching

With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing. In this work, a cyclical fluorocarbon/argon plasma is successfully used for patterning silicon oxide by ALE in a conventional inductively coupled plasma tool. The impact of plasma parameters and substrate electrode temperature on the etch performance is established. We achieve the self-limiting behavior of the etch process by modulating the substrate temperature. We find that at an electrode temperature of -10°C, etching stops after complete removal of the modified surface layer as the residual fluorine from the reactor chamber is minimized. Finally, we demonstrate the ability to achieve independent etching, which establishes the potential of the developed cyclic ALE process for small scale device patterning.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2022

Reaction processes at step edges on S-decorated Cu(111) and Ag(111) surfaces: MD analysis utilizing machine learning derived potentials

We report a variety of complexation, reconstruction, and sulfide formation processes can occur at step edges on the {111} surfaces of coinage metals (M) in the presence of adsorbed S under ultra-high vacuum conditions. Given the cooperative many-atom nature of these reaction processes, Molecular Dynamics (MD) simulation of the associated dynamics is instructive. However, only quite restricted Density Functional Theory (DFT)-level ab initio MD is viable. Thus, for M = Ag and Cu, we instead utilize the DeePMD framework to develop machine-learning derived potentials, retaining near-DFT accuracy for the M–S systems, which should have broad applicability. These potentials are validated by comparison with DFT predictions for various key quantities related to the energetics of S on M(111) surfaces. The potentials are then utilized to perform extensive MD simulations elucidating the above diverse restructuring and reaction processes at step edges. Key observations from MD simulations include the formation of small metal–sulfur complexes, especially MS 2 ; development of a local reconstruction at A-steps featuring an S-decorated {100} motif; and 3D sulfide formation. Additional analysis yields further information on the kinetics for metal–sulfur complex formation, where these complexes can strongly enhance surface mass transport, and on the propensity for sulfide formation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

Disentangling Pauli Blocking of Atomic Decay from Cooperative Radiation and Atomic Motion in a 2D Fermi Gas

The observation of Pauli blocking of atomic spontaneous decay via direct measurements of the atomic population requires the use of long-lived atomic gases where quantum statistics, atom recoil, and cooperative radiative processes are all relevant. In this work, we develop a theoretical framework capable of simultaneously accounting for all these effects in the many-body quantum degenerate regime. We apply it to atoms in a single 2D pancake or arrays of pancakes featuring an effective Λ level structure (one excited and two degenerate ground states). We identify a parameter window in which a factor of 2 extension in the atomic lifetime clearly attributable to Pauli blocking should be experimentally observable in deeply degenerate gases with ~10 3 atoms. We experimentally observe a suppressed excited-state decay rate, fully consistent with the theory prediction of an enhanced excited-state lifetime, on the 1 S 0 – 3 P 1 transition in 87 Sr atoms.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2021

Stellar s-process neutron capture cross sections on 78,80,84,86 Kr determined via activation, atom trap trace analysis and decay counting

We present a detailed account of neutron capture experiments of astrophysical relevance on 78,80,84,86 Kr (n, γ) reactions at the border between weak and main s process. The experiments were performed with quasi-Maxwellian neutrons from the Liquid-Lithium Target (LiLiT) and the mA-proton beam at 1.93 MeV (2-3 kW) of the Soreq Applied Research Accelerator Facility (SARAF). The setup yields high-intensity approximate to 40 keV quasi-Maxwellian neutrons (3-5 x10 10 n/s) closely reproducing the conditions of s-process stellar nucleosynthesis. A sample of 100 mg of atmospheric, pre-nuclear-age Kr gas contained in a Ti spherical shell was activated in the LiLiT neutron field. The abundances of long-lived Kr isotopes ( 81,85g Kr) were measured by atom counting via atom trap trace analysis (ATTA) at Argonne National Laboratory and low-level counting (LLC) at University of Bern. This work is the first measurement of a nuclear cross section using atom counting via ATTA. The activities of short-lived Kr isotopes ( 79,85m,87 Kr) were measured by gamma-decay counting with a high-purity germanium detector. Maxwellian-averaged cross sections for s-process thermal energies are extracted. By comparison to reference values, our nucleosynthesis network calculations show that the experimental cross sections have a strong impact on calculated abundances of krypton and neighboring nuclides, in some cases improving agreement between theory and observations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2019

Characterizing the Effect of Thermal Processing on Feedstock Al Alloy Powder for Additive Manufacturing Applications

Gas-atomized metallic powders are commonly used in additive manufacturing processes. Research has shown that, for certain AM techniques, the chemistry and microstructural properties of the feedstock powders significantly affect the properties of the consolidated material. Understanding the powder characteristics before use in additive manufacturing can lead to optimizing properties of additively manufactured materials as well as determining the recyclability of feedstock powders. This research studies the effect of various solution treatment processes on the characteristics and microstructural evolution of powder aluminum alloy 6061. Solution treatment times and temperatures were guided by thermodynamic and kinetic modeling. Light microscopy, scanning electron microscopy, and hardness were used to evaluate each condition in both two and three dimensions. Results indicate that the Mg{sub 2}Si present in the untreated condition dissolves after 60 min of solution treatment, while there are competing effects from the dissolution and concurrent growth of various Fe-containing phases. Additionally, it is shown that both granular and sub-granular structures exist in these rapidly solidified powders, and the sub-grains reorient themselves during solution treatment.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Superfluid effective field theory for dark matter direct detection

We develop an effective field theory (EFT) framework for superfluid 4 He to model the interactions among quasiparticles, helium atoms and probe particles. Our effective field theory approach brings together symmetry arguments and power-counting and matches to classical fluid dynamics. We then present the decay and scattering rates for the relevant processes involving quasiparticles and helium atoms. The presented EFT framework and results can be used to understand the dynamics of thermalization in the superfluid, and can be further applied to sub-GeV dark matter direct detection with superfluid 4 He.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1988

Research and technology 1988

This report presents the on-going research activities at the NASA Marshall Space Flight Center for the year 1988. The subjects presented are space transportation systems, shuttle cargo vehicle, materials processing in space, environmental data base management, microgravity science, astronomy, astrophysics, solar physics, magnetospheric physics, aeronomy, atomic physics, rocket propulsion, materials and processes, telerobotics, and space systems.

Source record↗

DOE OSTI2024

Quantum interference in atom-exchange reactions

Chemical reactions, in which bonds break and form, are highly dynamic quantum processes. A fundamental question is whether coherence can be preserved in chemical reactions and then harnessed to generate entangled products. Here we investigated this question by studying the 2KRb → K 2 + Rb 2 reaction at 500 nanokelvins, focusing on the nuclear spin degrees of freedom. We prepared the initial nuclear spins in KRb (potassium-rubidium) in an entangled state by lowering the magnetic field to where the spin-spin interaction dominates and characterized the preserved coherence in nuclear spin wave function after the reaction. We observed an interference pattern that is consistent with full coherence at the end of the reaction, suggesting that entanglement prepared within the reactants could be redistributed through the atom-exchange process.

Science & Technology - Other Topics↗

DOE OSTI2022

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗

DOE OSTI2019

Structural transformations of graphene exposed to nitrogen plasma: quantum chemical molecular dynamics simulations

Nitrogen-doped graphene (N-graphene) has been intensively studied for tailoring the electronic property of the graphene, because different nitrogen configurations influence the electronic properties of N-graphene in different ways. However, atomically precise control of the nitrogen configurations during the doping process remains a challenge in the synthesis of N-graphene. Moreover, additional structural transformations of the graphene carbon network structure as a side-effect of plasma doping are little understood and are as of yet uncontrollable. Therefore, we theoretically investigated the nitrogen doping process of graphene for a range of nitrogen atom incident kinetic energies in nonequilibrium quantum chemical molecular dynamics (QM/MD) simulations. We observed and characterized prominent configurations of N-containing graphene. In analogy to similar, earlier studies of graphene plasma hydrogenation, we observed an Eley–Rideal associative desorption mechanism during the graphene plasma nitrogenation, producing molecular nitrogen. Especially for graphitic-N (Gr-N) and Stone–Wales-defect-N (SW-N) configurations, which are frequently observed in experimental studies, we discovered two typical chemical reaction mechanisms which were well categorized by two key processes: adsorption of primary nitrogen dopant and collision with a secondary nitrogen dopant. Here, we discussed effects of the incident nitrogen energy on the formation mechanism, and propose a method to generate of Gr-N and SW-N configurations selectively by tuning the conditions with respect to the two key formation processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Understanding KOtBu in atomic layer deposition – in situ mechanistic studies of the KNbO3 growth process

Functional coatings based on alkali metals have become increasingly attractive in the current shift towards sustainable technologies. While lithium-based compounds have a natural impact on batteries, other alkali metal compounds are important as replacements for toxic materials in a range of electronic devices. This is especially true for potassium, being a major component in e.g. K x Na 1-x NbO 3 (KNN) and KTa x Nb 1-x O 3 (KTN), with hope to replace Pb(Zr x Ti 1-x )O 3 (PZT) in piezo-/ferroelectric and electrooptic devices. ALD facilitates functional conformal coatings at deposition temperatures far below what is reported using other techniques and with excellent compositional control. The ALD growth of potassium-containing films using KO t Bu has, however, been unpredictable. Untraditional response to the pulse composition and precursor dose, severe reproducibility issues, and very high growth per cycle are some of the puzzling features of these processes. In this article, we shed light on the growth behavior of KO t Bu in ALD by in situ quartz crystal microbalance and Fourier transform infrared spectroscopy studies. We study the precursor's behavior in the technologically interesting KNbO 3 -process, showing how the potassium precursor strongly affects the growth of other cation precursors. We show that the strong hygroscopic nature of the intermediary potassium species has far-reaching implications throughout the growth. This helps not only to enhance the understanding of alkali metal containing compounds’ growth in ALD, but also to provide the means to control the growth of novel sustainable technological materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2018

Initial Reduction of the PdO(101) Surface: Role of Oxygen Vacancy Formation Kinetics

Here, we investigated the initial thermal reduction of the PdO(101) surface using density functional theory (DFT) calculations. The defect-free PdO(101) surface consists of parallel rows of undercoordinated Pd and O atoms (Pd cus and O cus , respectively). DFT was used to map out the elementary processes of O cus vacancy formation, oxygen surface atom diffusion along the Pd cus rows, and various O 2 formation pathways. Because oxygen vacancies form during the reduction of the surface, the elementary processes were examined with and without the presence of adjacent O cus vacancies. DFT calculations show that the presence of oxygen vacancies strongly affects the barriers of adjacent surface processes. Barriers for O vacancy formation are reduced by nearly 50% with an adjacent O vacancy. The barrier for O 2 formation along the Pd cus row drops from 1.54 eV on the defect-free PdO(101) surface to 0.81 eV in the presence of an O cus vacancy dimer. Yet, the presence of O cus vacancies also leads to more strongly bound O 2 on the Pd cus row. The strong neighbor effect of O vacancies on the PdO(101) surface will favor the growth of O vacancy chains and increase the rate of thermal reduction of the surface, both features that have been observed in recent ultrahigh vacuum isothermal reduction experiments of the PdO(101) surface.

Defects in solids↗

DOE OSTI2019

Analysis of the light shift in the hyper-Ramsey scheme of two-level atom interrogation in an optically dense medium

The properties of the Ramsey resonance and its sensitivity to the light shift of the atomic transition frequency are investigated in the case of the hyper-Ramsey interrogation in an optically dense medium of cold atoms. The shape of the interrogating pulses varies significantly due to the processes of absorption and dispersion in the atomic medium, which leads to a distortion of the Ramsey resonance and a periodic change in the central minimum to the maximum and vice versa. The dependence of the position of the central resonance on the light shift of the atomic transition is found with the attenuation of radiation in the medium taken into account. It is shown that in a certain section of the medium this dependence becomes N-shaped. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

The DREAM Endstation at the Linac Coherent Light Source

Free-electron lasers (FEL), with their ultrashort pulses, ultrahigh intensities, and high repetition rates at short wavelength, have provided new approaches to Atomic and Molecular Optical Science. One such approach is following the birth of a photo electron to observe ion dynamics on an ultrafast timescale. Such an approach presents the opportunity to decipher the photon-initiated structural dynamics of an isolated atomic and molecular species. It is a fundamental step towards understanding single- and non-linear multi-photon processes and coherent electron dynamics in atoms and molecules, ultimately leading to coherent control following FEL research breakthroughs in pulse shaping and polarization control. A key aspect for exploring photoinduced quantum phenomena is visualizing the collective motion of electrons and nuclei in a single reaction process, as dynamics in atoms/ions proceed at femtosecond (10 –15 s) timescales while electronic dynamics take place in the attosecond timescale (10 –18 s). Here, we report on the design of a Dynamic Reaction Microscope (DREAM) endstation located at the second interaction point of the Time-Resolved Molecular and Optical (TMO) instrument at the Linac Coherent Light Source (LCLS) capable of following the photon–matter interactions by detecting ions and electrons in coincidence. The DREAM endstation takes advantage of the pulse properties and high repetition rate of LCLS-II to perform gas-phase soft X-ray experiments in a wide spectrum of scientific domains. With its design ability to detect multi-ions and electrons in coincidence while operating in step with the high repetition rate of LCLS-II, the DREAM endstation takes advantage of the inherent momentum conservation of reaction product ions with participating electrons to reconstruct the original X-ray photon–matter interactions. In this report, we outline in detail the design of the DREAM endstation and its functionality, with scientific opportunities enabled by this state-of-the-art instrument.

47 OTHER INSTRUMENTATION↗

DOE OSTI2019

Atomic Layer-Deposited Al{sub 2}O{sub 3} Interlayer for Improved Tribological and Anti-corrosion Properties of TiN Hard Coating on 316L Stainless Steel

A dense Al{sub 2}O{sub 3} interlayer was inserted into TiN to enhance the tribological and anti-corrosion properties of TiN hard coating via a hybrid process of magnetron sputtering and atomic layer deposition (ALD). The influence of the ALD-Al{sub 2}O{sub 3} layer on the microstructure, mechanical, tribological and anti-corrosion properties of TiN was examined. The TiN-Al{sub 2}O{sub 3} coating exhibits low friction coefficient and specific wear rate, due to the structure change and columnar refinement caused by the addition of amorphous ALD-Al{sub 2}O{sub 3} interlay which improves the mechanical properties of hard coating. The improved corrosion properties of TiN are attributed to the fact that the insulating ALD-Al{sub 2}O{sub 3} used as a sealing layer can prevent the corrosive chlorine ions migrating into the lower TiN layer and block the charge transport in coatings. Moreover, raising the insertion position of ALD-Al{sub 2}O{sub 3} layer away from the steel substrate results in a further increase in the anti-corrosion property of TiN-Al{sub 2}O{sub 3} composite coating.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Shape Control of Colloidal Semiconductor Nanocrystals through Thermodynamically Driven Aggregative Growth

The optoelectronic properties of colloidal semiconductor nanocrystals (NCs) can be manipulated by changing their geometric shapes. The precise synthetic control over particle morphologies, however, has remained elusive. Conventional growth techniques rely on the kinetic assembly of atomic units, where supersaturation and precipitation processes can lead to a broad distribution of particle shapes. In this paper, we demonstrate that replacing atomic precursors with small-size nanocrystals as building blocks for larger colloids offers an easier, more predictive control over nanoparticle shape evolution. The reported growth strategy is illustrated via shape-selective syntheses of CdSe and CdS NC cubes, spheres, rods, as well as unprecedented “donut” and ring-like structures. Growth of desired particle morphologies was achieved by choosing an appropriate reaction solvent that minimizes the surface free energy through a unique shape formation. This so-called "aggregative growth mechanism" is explained using a thermodynamic model for interacting viscous colloids. We expect that this novel growth strategy will offer a viable platform for shape–selective synthesis of many inorganic colloids, providing pathways to optimizable optoelectronic materials.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Atomic-scale control of tunneling in donor-based devices

Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of the tunneling rates and tunnel coupling has not been demonstrated. Here using a room temperature grown locking layer and precise control over the entire fabrication process, we reduce unintentional dopant movement while achieving high quality epitaxy in scanning tunnelling microscope (STM)-patterned devices. Using the Si(100)2 × 1 surface reconstruction as an atomically-precise ruler to characterize the tunnel gap in precision-patterned single electron transistors, we demonstrate the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows. We demonstrate the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the tunneling rates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Photoionization of metastable heliumlike C 4 + ( 1 s 2 s S 1 3 ) ions: Precision study of intermediate doubly excited states

In a joint experimental and theoretical endeavor, photoionization of metastable C 4+ (1s2s 3 S 1 ) ions via intermediate levels with hollow, double-K-vacancy configurations 2s2p, 2s3p, 2p3s, 2p3d, 2s4p, 2p4s, and 2p4d has been investigated. High-resolution photon-ion merged-beams measurements were carried out with the resolving power reaching up to 25 800 which is sufficient to separate the leading fine-structure components of the 2s2p 3 P term. Many-body perturbation theory was employed to determine level-to-level cross sections for K-shell excitation with subsequent autoionization. The resonance energies were calculated with inclusion of electron correlation and radiative contributions. Their uncertainties are estimated to be below ±1 meV. Detailed balance confirms the present photoionization cross-section results by comparison with previous dielectronic-recombination measurements. Finally, the high accuracy of the theoretical transition energies together with the present experimental results qualify photoabsorption resonances in heliumlike ions as new, greatly improved energy-reference standards at synchrotron radiation facilities.

74 ATOMIC AND MOLECULAR PHYSICS↗