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At least 757 records · Page 42

Highly sensitive and accurate optical thermometer through Er doped tellurite glasses

Highlights: • Upconversion mechanisms of transparent Er{sup 3+} doped tellurite glasses are discussed. • Sensitivity of the thermometer based on the FIR technique increases monotonously with the decreasing doping concentration. • Highly sensitive and accurate optical thermometer is achieved using low doping sample as the probe and high power laser as the pumping source. - Abstract: We investigate the thermal effects of Er{sup 3+} doped tellurite glasses on the upconversion properties. It is found that the sensitivity of the thermometer based on the FIR technique increases monotonously with the decreasing doping concentration. However, low doping leads to weak upconversion intensity and further decrease the sensing accuracy, which makes it difficult to achieve the high sensitivity and accuracy simultaneously. Influences of the irradiating laser power on the sensing behaviors were studied in the purpose of enhancing the signal intensity. It is found that the heating effect of incident laser (up to hundreds of mW) can be neglected, indicating the feasibility of using high laser power and low doping sample to produce both high sensitivity and high accuracy. In addition, this paper respectively discusses the mechanisms of the upconversion processes and the concentration dependent sensitivity.

36 MATERIALS SCIENCE↗

Biopolymer‐assisted Synthesis of P‐doped TiO 2 Nanoparticles for High‐performance Lithium‐ion Batteries: A Comprehensive Study

Abstract TiO 2 material has gained significant attention for large‐scale energy storage due to its abundant, low‐cost, and environmentally friendly properties, as well as the availability of various nanostructures. Phosphorus doping has been established as an effective technique for improving electronic conductivity and managing the slow ionic diffusion kinetics of TiO 2 . In this study, non‐doped and phosphorus doped TiO 2 materials were synthesized using sodium alginate biopolymer as chelating agent. The prepared materials were evaluated as anode materials for lithium‐ion batteries (LIBs). The electrodes exhibit remarkable electrochemical performance, including a high reversible capacity of 235 mAh g −1 at 0.1 C and excellent first coulombic efficiency of 99 %. An integrated approach, combining operando XRD and ex‐situ XAS, comprehensively investigates the relationship between phosphorus doping, material structure, and electrochemical performance, reinforced by analytical tools and first principles calculations. Furthermore, a full cell was designed using 2 %P‐doped TiO 2 anode and LiFePO 4 cathode. The output voltage was about 1.6 V with high initial specific capacity of 148 mAh g −1 , high rate‐capability of 120 mAh g −1 at 1 C, and high‐capacity retention of 96 % after 1000 cycles at 1 C.

El Halya, Nabil↗

Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping

SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interest due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valley conduction bands through electron doping to provide a complete picture of the thermoelectric physics. Moreover, by electron doping through potassium deposition, the band gap of SnSe can be widely tuned from 1.2 eV to 0.4 eV, providing new opportunities for tunable electronic and optoelectronic devices.

Zhang, Kenan↗

Novel preparation of N-doped SnO 2 nanoparticles via laser-assisted pyrolysis: Demonstration of exceptional lithium storage properties

Here, laser pyrolyzed SnO 2 nanoparticles with an option of nitrogen (N) doping are prepared using a cost-effective method. The electrochemical performance of N-doped samples is tested for the first time in Li-ion batteries where the sample with 3% of N-dopant exhibits optimum performance with a capacity of 522 mAh g active material –1 that can be obtained at 10 A g –1 (6.7C).

25 ENERGY STORAGE↗

Thermoelectric Properties of Nanocrystalline Silicon Films Prepared by Hot-Wire and Plasma-Enhanced Chemical-Vapor Depositions

We report thermoelectric measurements over a temperature range of 80 K to 300 K of heavily boron-doped nanocrystalline silicon films prepared by hot-wire and plasma-enhanced chemical-vapor depositions. The nanocrystalline silicon films were doped by either gaseous deposition precursors or post-deposition ion implantation, resulting in boron concentrations ranging from 1 -2 x 10 20 cm -3 to 3 x 10 21 cm -3 . Reasonable values of the Seebeck coefficient and electrical conductivity were obtained at 300 K, comparable to many other research work. We also report thermal conductivity measurements on these films before doping, which we use to estimate their prospective thermoelectric efficiency. These measurements show values as low as 0.76 W/mK at 300 K which depend highly upon the grain sizes of the nc-Si films. We find that post-deposition doping by ion-implantation is more effective at enhancing the power factor than gaseous doping, and the power factor is only weakly dependent upon doping concentration for the films doped by ion implantation. We conclude that improvements of the thermoelectric efficiency of nc -Si films may depend more on a reduction of their thermal conductivity than doping optimization. The small grain sizes and the low thermal conductivity of the undoped nc -Si films accomplished in this work are therefore encouraging developments.

14 SOLAR ENERGY↗

Final Technical Report for DE-FG02-86ER45268

This work addresses several key issues for understanding the unusual superconductivity in IBS, already shown to be technologically useful materials. 1a). Are reactive gasses like fluorine, chlorine, or water vapor behaving simply as electron donors to cause the superconductivity (at T conset =21 K) in undoped IBS like BaFe 2 As 2 ? 1b). Does exposure to fluorine increase T c in electron-doped IBS materials that are underdoped, e. g. Ba(Fe 0.96 Co 0.04 ) 2 As 2 ? 1c). Can fluorine as a reactive electron-donor, with its relatively greater ease of introduction into the lattice, be used as a rapid tool to search for superconductivity in new materials under investigation? Method of investigation: Using electron probe microanalysis, x-ray photoemission spectroscopy, and dynamical mean field theory calculations, we found that fluorine substitutes for As in the BaFe 2 As 2 lattice, and should therefore behave as an electron donor. We will F-dope Ba(Fe 0.96 Co 0.04 ) 2 As 2 and several new compounds under investigation for superconductivity upon doping to determine fluorine’s effect. Potential impact: If – like for fluorine - a brief exposure to hydrogen indeed causes superconductivity to a depth of 10 microns, this technique could be useful in creating long lengths of superconducting tape without the chemical aggressiveness of fluorine. Using the F ion, which substitutes for As - away from the Fe planes, in underdoped IBS like Ba(Fe 0.96 Co 0.04 ) 2 As 2 may form optimally doped IBS with less impurity scattering of the superconducting Fe 3d electrons resulting in improved superconducting properties. Another potential impact is the speed of checking for superconductivity in new materials under investigation for superconductivity upon doping. 2. What are the effects of Be substitution into IBS, beginning with FeSe and its derivatives (FeSe 1-x S x and FeSe 1-x Te x ) and BaFe 2-x Co x As 2 ? Method of investigation: We recently succeeded in adding Be to the FeSe lattice and found, surprisingly, a factor of four improvement of the low temperature residual resistivity ratio, consistent with improved electronic ordering. Using single crystal x-ray diffraction and x-ray dispersive spectroscopy, determine the concentration and location of the Be dopant. Using resistivity, determine if there is improvement in the residual resistivity achieved by Be doping in the FeSe derivatives (using AlCl 3 :KCl flux growth) and Co-doped BaFe 2 As 2 (using self-flux single crystal growth). Measuring resistivity under strain, determine the changes of the nematic susceptibility at the structural ordering transition causes by the increase in electronic order caused by Be doping in FeSe. Potential impact: Further understanding of IBS, including FeSe which - under physical pressure - has a T c increase to 40 K and -prepared as a monolayer - has a T c reported to be over 100 K. 3. In collaboration, prepare light atom compounds involving Be and look for high pressure-induced superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evolution of Dissipative Regimes in Atomically Thin Bi 2 Sr 2 CaCu 2 O 8 + x Superconductor

Thermoelectric transport is widely used to study Abrikosov vortex dynamics in unconventional superconductors. However, only a few thermoelectric studies have been conducted near the dimensional crossover that occurs when the vortex-vortex interaction length scale becomes comparable to the sample size. Here, the effects of finite size on the dissipation mechanisms of the Nernst effect in the optimally doped Bi 2 Sr 2 CaCu 2 O 8 + x high-temperature superconductor are reported, down to the atomic length limit. To access this regime, a new generation of thermoelectric chips based on silicon nitride microprinted circuit boards is developed. These chips ensure optimized signals while preventing sample deterioration. The results demonstrate that lateral confinement at the nanoscale can effectively reduce vortex dissipation. Investigating vortex dissipation at the micro- and nano-scale is essential for creating stable, miniaturized superconducting circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers

This paper reports on 1D kinetic modeling of p-type doping formation in Cu-doped chlorinated CdSeTe photovoltaic (PV) absorbers with graded Se profiles. Following the recent progress in kinetic simulations of the defect chemistry in stoichiometric CdTe films, this work extends simulation capabilities to a domain of semiconductor alloy films with graded stoichiometries. The defect formation energies and ionization levels, as well as the diffusion and reaction barriers used in the reaction-diffusion equations are calculated from the first principles. A new formalism is employed to account for the uncertainty of the defect formation energies in semiconductor alloys caused by unknown local surrounding. Finally, the developed methodology is used to model a practical fabrication process of p-type doping formation in graded CdSeTe absorbers and to study the effect of alloy stoichiometry on the doping activation.

14 SOLAR ENERGY↗

Controlled Dy-doping to nickel-rich cathode materials in high temperature aerosol synthesis

Layered nickel-rich materials are promising next-generation cathode materials for lithium ion batteries due to their high capacity and low cost. However, the poor thermal stability and longtime cycling performance hinders the commercial applications of high nickel materials. Doping with heteroatoms has been an effective approach for improving electrochemical performance of cathode materials. Controlling doping concentration and geometrical distribution is desired for optimal electrochemical performance, but it is challenging in traditional co-precipitation methods. In this work, controlled dysprosium (Dy) doping to NCM811 was studied in an aerosol synthesis method by controlling the precursor concentrations and heating parameters. The obtained materials were characterized by SEM, XRD, and XPS, and their electrochemical properties and thermal stability were evaluated. By controlling the doping concentration (1.5%), Dy-doped NCM811 was improved simultaneously in long-term cycling and high-rate performance. Here, the thermal-chemical stability of the Dy-doped cathode materials was examined in a microflow reactor with a mass spectrometer. The results showed that Dy-doping shifted the O 2 onset temperature to a higher temperature and reduced O 2 release by 80%, thus dramatically increasing the thermal-chemical stability and improving the fire safety of cathode materials. Since high temperature aerosol synthesis is a low-cost and scalable method, the findings in this work have broad implications for commercial synthesis of novel materials with controlled doping modification to achieve high electrochemical performance and safety in lithium ion batteries.

25 ENERGY STORAGE↗

Unidirectional Magneto-Resistance in Modulation-Doped Magnetic Topological Insulators

Nonlinear unidirectional spin Hall magnetoresistance (USMR) has been reported in heavy metal/ferromagnet bilayers, which could be employed as an effective method in detecting the magnetization orientation in spintronic devices with 2-terminal geometry. Recently, another unidirectional magnetoresistance (UMR) was reported in magnetic topological insulator (TI)-based heterostructures at cryogenic temperature, whose amplitude is orders of magnitude larger than the USMR measured in heavy metal-based magnetic heterostructures at room temperature. Here, we report the UMR effect in the modulation-doped magnetic TI structures. This UMR arises due to the interplay between the magnetic dopant’s magnetization and the current-induced surface spin polarization, when they are parallel or antiparallel to each other in the TI material. By varying the dopant’s position in the structure, we reveal that the UMR is mainly originating from the interaction between the magnetization and the surface spin-polarized carriers (not bulk carriers). Furthermore, from the magnetic field-, the angular rotation-, and the temperature-dependence, we highlight the correlation between the UMR effect and the magnetism in the structures. The large UMR versus current ratio in TI-based magnetic bilayers promises the easy readout in TI-based spintronic devices with 2-terminal geometry.

42 ENGINEERING↗

Nitrogen-doped char as a catalyst for wet oxidation of phenol-contaminated water

Catalytic wet oxidation (CWO) of aqueous effluents rich in organic compounds is a very promising technology for the treatment of liquid wastes from biomass conversion processes. CWO reactions occur through the formation of free radical species, produced in the presence of an oxidant, which act on organic contaminates in the effluent. Although the reaction is well known, there exists a lack of affordable catalysts to conduct this process at the lower temperatures and pressures in novel bioenergy processes. Here, this study assessed the catalytic effect of nitrogen-doped chars as such an option. Phenol in aqueous solution was used as a model waste effluent. Treatment was conducted at moderate temperatures (190 to 260 °C), oxygen partial pressure of 1 MPa, and reaction times of 15, 30, and 45 min in stainless steel and glass-lined tube reactors. High pressure liquid chromatography (HPLC) analyses of the products quantified phenol and by-product concentrations used in the calculation of reaction activation energy. The char catalyst was studied by X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and scanning electron microscopy (SEM) in order to gain insight into its structure and surface composition. The results indicate that nitrogen-doped char catalysts accelerate the oxidation of phenol by decreasing its reaction activation energy from 82.2 kJ/mol (non-catalyzed) to 40.4 kJ/mol (catalyzed). An analysis from first principles using density functional theory (DFT) was conducted to ascertain which N functional group has the most significant impact on free radical formation in the presence of oxygen. Among all the N functional groups studied, the dipyridinic functional groups showed the most promising characteristics to facilitate the formation of hydroxyl free radicals.

Advanced Oxidation Processes for Organic Pollutant↗

Atomic-scale 3D structural dynamics and functional degradation of Pt alloy nanocatalysts during the oxygen reduction reaction

Pt-based electrocatalysts are the primary choice for fuel cells due to their superior oxygen reduction reaction (ORR) activity. To enhance ORR performance and durability, extensive studies have investigated transition metal alloying, doping, and shape control to optimize the three key governing factors for ORR: geometry, local chemistry, and strain of their surface and subsurface. However, systematic optimization remains incomplete, as it requires an atomic-scale understanding of these factors and their dynamics over potential cycling, as well as their relationship to ORR activity. Here, we implement neural network-assisted atomic electron tomography to measure the 3D atomic structural dynamics and their effects on the functional degradation of PtNi alloy catalysts. Our results reveal that PtNi catalysts undergo shape changes, surface alloying, and strain relaxation during cycling, which can be effectively mitigated by Ga doping. By combining geometry, local chemistry, and strain analysis, we calculated the changes in ORR activity over thousands of cycles and observed that Ga doping leads to higher initial activity and greater stability. These findings offer a pathway to understanding 3D atomic structural dynamics and their relation to ORR activity during cycling, paving the way for the systematic design of durable, high-efficiency nanocatalysts.

Jeong, Chaehwa↗

Enhancement‐Mode PEDOT:PSS Organic Electrochemical Transistors Using Molecular De‐Doping

Abstract Organic electrochemical transistors (OECTs) show great promise for flexible, low‐cost, and low‐voltage sensors for aqueous solutions. The majority of OECT devices are made using the polymer blend poly(ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), in which PEDOT is intrinsically doped due to inclusion of PSS. Because of this intrinsic doping, PEDOT:PSS OECTs generally operate in depletion mode, which results in a higher power consumption and limits stability. Here, a straightforward method to de‐dope PEDOT:PSS using commercially available amine‐based molecular de‐dopants to achieve stable enhancement‐mode OECTs is presented. The enhancement‐mode OECTs show mobilities near that of pristine PEDOT:PSS (≈2 cm 2 V −1 s −1 ) with stable operation over 1000 on/off cycles. The electron and proton exchange among PEDOT, PSS, and the molecular de‐dopants are characterized to reveal the underlying chemical mechanism of the threshold voltage shift to negative voltages. Finally, the effect of the de‐doping on the microstructure of the spin‐cast PEDOT:PSS films is investigated.

Keene, Scott T.↗

Confirmation of Incorporation of Cu and Se Ions in Applied p- and n-Type-Doped Sb2S3 by Photoemission Spectroscopy

The effect of incorporating copper (Cu) and selenium (Se) ions into stibnite (Sb2S3) lattice was investigated using x-ray photoelectron spectroscopy (XPS). The incorporation of Cu and Se ions was verified by comparing the XPS spectra of the undoped (amorphous Sb2S3), doped (p and n-doped) and pure Se and Cu-acetate powders. The main photoelectron Cu 2p(1/2) (951.8 eV) and Cu 2p(3/2) (932.1 eV) lines derived from the Cu-doped and Cu-acetate powder samples were clearly observed, whereas in the undoped sample, none of the characteristic lines of Cu were detected. The Se Auger line (138.6 eV), the only line of Se which does not coincide with the lines of Sb and S, was successfully detected in an Se-doped XPS sample and the spectrum of pure Se, while Se in the undoped sample was not found. Further, the XPS measurements revealed the relative amounts of Cu and Se in antimony sulfide, as well as the oxidation state of copper incorporated into the matrix.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The Photorefractive and Photovoltaic Properties of a Composite Based on Ferroelectric Polymer Doped with Carbon Nanotubes

The photorefractive effect is obtained in a composite of a ferroelectric polymer (polyvinylidene fluoride with trifluoroethylene (P(VDF/TrFE)) and single-walled carbon nanotubes (SWCNTs), which serve simultaneously as non-linear optical chromophores and spectral sensitizers to a 1064-nm laser beam. It is established that the presence of internal field in the ferroelectric makes it possible to measure the photorefractive effect in the absence of applied external field. Undoped films of VDF/TrFE copolymer are not photosensitive and do not exhibit the bulk photovoltaic effect (BPE). BPE is observed (along with the photosensitivity) in polarized samples, when carbon nanotubes are introduced into the copolymer.

36 MATERIALS SCIENCE↗

Strongly Correlated Charge Density Wave in La 2 – x Sr x CuO 4 Evidenced by Doping-Dependent Phonon Anomaly

The discovery of charge-density-wave-related effects in the resonant inelastic x-ray scattering spectra of cuprates holds the tantalizing promise of clarifying the interactions that stabilize the electronic order. In this paper, we report a comprehensive resonant inelastic x-ray scattering study of La 2 – x Sr x CuO 4 finding that charge-density wave effects persist up to a remarkably high doping level of x = 0.21 before disappearing at x = 0.25 . The inelastic excitation spectra remain essentially unchanged with doping despite crossing a topological transition in the Fermi surface. This indicates that the spectra contain little or no direct coupling to electronic excitations near the Fermi surface, rather they are dominated by the resonant cross section for phonons and charge-density-wave-induced phonon softening. We interpret our results in terms of a charge-density wave that is generated by strong correlations and a phonon response that is driven by the charge-density-wave-induced modification of the lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗