Search NASA⌕ Search

SEARCH · Search NASA

Results for “insertion”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 757 records · Page 42

The Effects of Plasma Pre-Cracking on Drilling of Hard Rocks: A Single Insert Cutting Experiment

Abstract This paper studies the effects of plasma-induced cracks on rock cutting to support the concept of a plasma-integrated drag bit for accelerated geothermal drilling through hard rocks. For this, a single polycrystalline diamond compact (PDC) drilling technique is used in cutting granite to compare thrust and cutting forces between plasma-treated and untreated rock samples. The cracks are produced using underwater plasma at 80 J per pulse. This energy level does not produce visible damage to the rock. The cutting tests are conducted at a cutting speed of 12.7 m/min and four feed rates of 0.127, 0.201, 0.267, and 0.414 mm/s to represent actual drilling scenarios. The results show a general trend of reduction in both thrust and cutting forces for these feed rates, but the magnitude of reduction highly depends on the feed rate. The maximum force reduction of around 50% is found at the 0.267 mm/s feed rate with statistical significance. Cases with a higher force reduction are also found to have rougher surface topography, which indicates more excessive fracturing and, thus, a cracks-accelerated material removal process. This study provides initial evidence of using underwater plasma to increase the downhole drilling rate of hard rocks.

Engineering↗

Influence of Al{sub 2}O{sub 3} layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

To investigate the influence of ionic/covalent interface of Al{sub 2}O{sub 3}/SiO{sub 2} gate insulator on the electrical properties of thin-film transistors (TFTs) with ionic Ga-In-Zn-O (GIZO) semiconducting channel layers, Al{sub 2}O{sub 3} layers of different thickness were introduced between SiO{sub 2} and GIZO using plasma-enhanced atomic layer deposition. The GIZO layers were obtained by DC magnetron sputtering using a GIZO target (Ga:In:Zn = 1:1:1 mol. %). The GIZO TFTs with an Al{sub 2}O{sub 3}/SiO{sub 2} gate insulator exhibited positive threshold voltage (V{sub th}) shift (about 1.1 V), V{sub th} hysteresis suppression (0.23 V), and electron mobility degradation (about 13%) compared with those of a GIZO TFT with SiO{sub 2} gate insulator by the influence of ionic/ionic and ionic/covalent interface at Al{sub 2}O{sub 3}/GIZO and Al{sub 2}O{sub 3}/SiO{sub 2}, respectively. To clarify the origin of the positive V{sub th} shift, the authors estimated the shifts of flatband voltage (0.4 V) due to the dipole and the fixed charge (−1.1 × 10{sup 11}/cm{sup 2}) at Al{sub 2}O{sub 3}/SiO{sub 2} interface, from capacitance–voltage data for Pt/Al{sub 2}O{sub 3}/SiO{sub 2}/p-Si capacitors. Based on these experimental data, the authors found that the positive V{sub th} shift (1.1 V) could be divided into three components: the dipole (−0.4 V) and fixed charge (0.15 V) at the SiO{sub 2}/Al{sub 2}O{sub 3} interface, and the fixed charge (1.35 V) at the Al{sub 2}O{sub 3}/GIZO interface. Finally, it is noted that heterointerface of SiO{sub 2}/Al{sub 2}O{sub 3}/GIZO stacks is important not only to recognize mechanism of V{sub th} shift but also to design future TFTs with high-k dielectrics and low operating voltage.

42 ENGINEERING↗

Fielding the LANL Gas Cherenkov Detector (GCD-3) at the National Ignition Facility: The engineering challenges of designing, analyzing, fabricating, testing, and commissioning the next-generation GCD detector and WellDIM3.9m insertion manipulator for use at NIF

We report that fielding the LANL third-generation Gas Cherenkov Detector (GCD-3) at the National Ignition Facility (NIF) revealed an array of complex engineering challenges. Fielding the GCD-3 Detector in a 3.9 meter re-entrant Well on the NIF Target Chamber required the development of a specialized detector deployment system named the WellDIM3.9m Diagnostic Manipulator (WellDIM). The most stringent design requirement entailed a no-load/no-contact condition with the Well, which dictated that all seismic loads be transferred to the Target Chamber port flange. The WellDIM transports the GCD-3 into the Well at a distance of 3.9m from Target Chamber Center. Finally, the GCD-3 Detector, outfitted with additional shielding to mitigate higher NIF backgrounds, will serve as a prototype for the future, heavily shielded “Super-GCD”.

42 ENGINEERING↗

Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE

We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (μ-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the μ-CPSSs and followed by growth of 1-μm-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000-) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.

36 MATERIALS SCIENCE↗

Quantifying the Entropy and Enthalpy of Insertion Materials for Battery Applications Via the Multi-Species, Multi-Reaction Model

The entropy coefficient of a battery cell is the property that governs the amount of reversible heat that is generated during operation. In this work, we propose an extension of the Multi-Species, Multi-Reaction (MSMR) model to capture the entropy coefficient of a large format lithium-ion battery cell. We utilize the hybridized time-frequency domain analysis (HTFDA) method using a multi-functional calorimeter to probe the entropy coefficient of a large format pouch type lithium-ion battery with a NMC 811 cathode and a graphite anode. The measured entropy coefficient profile of the battery cell is deconvoluted into an entropy coefficient for each active material, which is then estimated using an extension of the MSMR model. Finally, we extend the entropy of a material to individual entropy for each gallery as treated by the model.

Electrochemistry↗

Development of PET Imaging Insert for Aurora Breast MRI System

The objective of this CRADA is to develop a PET scanner that is compatible with the Aurora breast MRI system, allowing simultaneous PET and MR imaging of a single breast. PET is highly complementary to MRI in the detection of cancer - MRI is very sensitive but has many false positives, and PET can much better distinguish cancerous tissue from benign.

99 GENERAL AND MISCELLANEOUS↗

Build redesigned HFIR rabbit capsules and make ready for insertion for irradiation in HFIR

This report details the fabrication and delivery of two Fuel Cycle Research and Development irradiation capsules (FCRP20 and FCRP03), with associated quality assurance documentation, to the High Flux Isotope Reactor. The capsules and documentation were delivered by September 30, 2015, thus meeting the deadline for milestone M3FT-15OR0203112. These irradiation experiments irradiate metal parallelepiped specimens that may consist of various compositions including uranium metal, steel, etc. This document contains a copy of the completed capsule fabrication request sheets, which detail all constituent components, pertinent drawings, etc., along with a detailed summary of the capsule assembly process performed by the Thermal Hydraulics and Irradiation Engineering Group (THIEG) in the Reactor and Nuclear Systems Division. A complete fabrication package record is maintained by THIEG and is available upon request.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗