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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Electroluminescence of quantum-dash-based quantum cascade laser structures

We developed two mid-infrared quantum cascade structures based on InAs quantum dashes. The dashes were embedded either in AlInGaAs lattice-matched to InP or in tensile-strained AlInAs. The devices emit between 7 and 11 {mu}m and are a step forward in the development of quantum cascade lasers based on 3-D confined active regions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Effects of molecular beam epitaxy growth conditions on composition and optical properties of In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y}

We describe the growth conditions of In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y} (lattice-mismatched and matched) on InP substrates by molecular beam epitaxy and the resulting properties. Due to their anomalously narrow bandgaps and the presence of bismuth, these materials are promising for optoelectronics and thermoelectrics. Low growth temperature and moderate As/Bi beam equivalent pressure ratios are beneficial for Bi incorporation, in good qualitative agreement with GaBi{sub y}As{sub 1-y} on GaAs. Up to 6.75% bismuth is incorporated. High resolution x-ray diffraction and reciprocal space mapping show that In{sub x}Ga{sub 1-x}Bi{sub y}As{sub 1-y} samples exhibit good crystalline quality and zero relaxation. The band gap is reduced in agreement with theoretical predictions. Lattice-matched samples have been produced with lattice mismatch {<=}0.21%.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites

InGaAs lattice-matched to InP was grown by molecular beam epitaxy with randomly distributed TbAs nanoparticles for thermoelectric power generation applications. TbAs:InGaAs is expected to have a large thermoelectric figure of merit, ZT, particularly at high temperatures, owing to energy band alignment between the nanoparticles and their surrounding matrix. Here, the room temperature thermoelectric properties were measured as a function of TbAs concentration, revealing a maximum thermoelectric power factor of 2.38 W/mK{sup 2} and ZT of 0.19 with 0.2% TbAs. Trends in the thermoelectric properties closely resemble those found in comparable ErAs:InGaAs nanocomposite materials. However, nanoparticles were not observed by scanning transmission electron microscopy in the highest ZT TbAs:InGaAs sample, unlike the highest ZT ErAs:InGaAs sample (0.2% ErAs) and two higher concentration TbAs:InGaAs samples examined. Consistent with expectations concerning the positioning of the Fermi level in these materials, ZT was enhanced by TbAs incorporation largely due to a high Seebeck coefficient, whereas ErAs provided InGaAs with higher conductivity but a lower Seebeck coefficient than that of TbAs:InGaAs. Thermal conductivity was reduced significantly from that of intrinsic thin-film InGaAs only with TbAs concentrations greater than {approx}1.7%.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs

We report room temperature electronic and thermoelectric properties of Si-doped In{sub 0.52}Ga{sub 0.48}Bi{sub y}As{sub 1-y} with varying Bi concentrations. These films were grown epitaxially on a semi-insulating InP substrate by molecular beam epitaxy. We show that low Bi concentrations are optimal in improving the conductivity, Seebeck coefficient, and thermoelectric power factor, possibly due to the surfactant effects of bismuth. We observed a reduction in thermal conductivity with increasing Bi concentration, which is expected because of alloy scattering. We report a peak ZT of 0.23 at 300 K.

36 MATERIALS SCIENCE↗
DOE OSTI2012

High performance InGaAs/GaAsSb terahertz quantum cascade lasers operating up to 142 K

We report on the demonstration of a maximum operating temperature of 142 K for InGaAs-based terahertz quantum cascade lasers. This result is achieved by using the alternative material combination In{sub 0.53}Ga{sub 0.47}As/GaAs{sub 0.51}Sb{sub 0.49}, lattice-matched to InP, which exhibits fabrication advantages over standard In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As due to more suitable material parameters. An active region, based on a three-well phonon depletion design, with improved injection and extraction tunneling coupling, was designed. The devices exhibit threshold current densities of 0.75 kA/cm{sup 2} and provide peak optical powers up to 9 mW. A broad spectral emission range between 3.3 and 4 THz is measured.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Observation of two-dimensional p-type dopant diffusion across a p{sup +}-InP/n{sup -}-InGaAs interface using scanning electron microscopy

Scanning electron microscopy (SEM) with potential calculations has been shown to be effective for the detection of p-type dopant diffusion, even across a Zn doped p{sup +}-InP/non-doped n{sup -}-InGaAs/n{sup +}-InP heterojunction. Heterojunction samples were observed using SEM and the electrostatic potential was calculated from Zn concentration profiles obtained by secondary ion mass spectrometry. The sensitivity of SEM for the potential was derived from the SEM observations and potential calculation results. The results were then used to investigate the dependence of the SEM contrast on the Zn diffusion length across the p{sup +}-InP/non-doped n{sup -}-InGaAs interface. Accurate dopant mapping was difficult when the Zn diffusion length was shorter than 30 nm, because the heterojunction affects the potential at the interface. However, accurate dopant mapping was possible when the Zn diffusion length was longer than 30 nm, because the factor dominating the potential variation was not the heterojunction, but rather Zn diffusion 30 nm distant from the interface. Thus, Zn diffusion further than 30 nm from a Zn-doped p{sup +}-InP/non-doped n{sup -}-InGaAs interface can be effectively detected by secondary electron (SE) imaging. SE imaging with potential calculations can be widely used for accurate dopant mapping, even at heterojunctions, and is, therefore, expected to be of significant assistance to the compound semiconductor industry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Terahertz quantum cascade lasers based on quaternary AlInGaAs barriers

Terahertz quantum cascade lasers incorporating lattice-matched quaternary AlInGaAs barriers grown by molecular beam epitaxy on InP substrate are reported. Four quantum well active region devices exhibited lasing at 3.8 THz with threshold current densities as low as 74 A/cm{sup 2} at 10 K. From optical characterization and a doping study of the active region, an upper state lifetime of 8 ps, as well as a long transport time across the active region of 68 ps and a ratio of free carrier loss to gain cross sections of 4.6%, is reported. A maximum operating temperature of 130 K was achieved for a device with a conduction band discontinuity of 0.14 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Indium diffusion through high-k dielectrics in high-k/InP stacks

Evidence of indium diffusion through high-k dielectric (Al{sub 2}O{sub 3} and HfO{sub 2}) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a PO{sub x} rich interface.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Surface InP/In{sub 0.48}Ga{sub 0.52}P quantum dots: Carrier recombination dynamics and their interaction with fluorescent dyes

We describe the properties and carrier dynamics of surface InP quantum dots (QDs) on In{sub 0.48}Ga{sub 0.52}P, lattice-matched to GaAs (100). The structures were grown using gas-source molecular beam epitaxy. The average height and lateral size of the dots are in the range of 2–6 and 30–50 nm, respectively. The photoluminescence of the surface dots peaks between 750 and 830 nm, depending on the growth conditions, and is red-shifted compared to the emission of the capped QDs grown under similar conditions. The integrated photoluminescence intensity is comparable to that of the capped QDs. The decay time of both surface and capped QDs is around 1 ns at 15 K. The strong luminescence of surface QDs is explained by the effect of acting vacuum/air as an effective barrier and saturated surface states. Enhancement of the QDs luminescence is observed for the samples coated with a fluorescent dye.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics

Fermi level pinning at metal/n-InP interface and effective Schottky barrier height (Φ{sub B,eff}) were optimized by inserting ultrathin dielectrics in this work. Comparing the inserted monolayer and bilayer high-k dielectrics, we demonstrated that the introduction of bilayer dielectrics can further reduce Φ{sub B,eff} (from 0.49 eV to 0.22 eV) than the monolayer dielectric (from 0.49 eV to 0.32 eV) even though the overall dielectric thickness was thicker. The additional dipole formed at high-k/high-k interfaces could be used to expound the mechanism. This work proposed an effective solution to reduce resistance contacts for InP based transistors and Schottky barrier transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Modulational instability of electrostatic acoustic waves in an electron-hole semiconductor quantum plasma

The modulational instability of quantum electrostatic acoustic waves in electron-hole quantum semiconductor plasmas is investigated using the quantum hydrodynamic model, from which a modified nonlinear Schrödinger equation with damping effects is derived using the reductive perturbation method. Here, we consider the combined effects of quantum recoil, quantum degenerate pressures, as well as the exchange-correlation effect standing for the electrons (holes) spin. The modulational instability for different semiconductors (GaAs, GaSb, and InP) is discussed. The collision between electron (hole) and phonon is also investigated. The permitted maximum time for modulational instability and the damping features of quantum envelope solitary wave are all determined by the collision. The approximate solitary solution with damping effects is presented in weak collision limit. The damping properties were discussed by numerical method.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Terahertz oscillations in an In{sub 0.53}Ga{sub 0.47}As submicron planar Gunn diode

The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode—the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5 μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5 μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600 nm and 700 nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In{sub 0.53}Ga{sub 0.47}As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 μW was obtained from a 600 nm long × 120 μm wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible—the Monte Carlo model used predicts power output at frequencies over 300 GHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Pump-probe surface photovoltage spectroscopy measurements on semiconductor epitaxial layers

Pump-probe Surface Photovoltage Spectroscopy (SPS) measurements are performed on semiconductor epitaxial layers. Here, an additional sub-bandgap cw pump laser beam is used in a conventional chopped light geometry SPS setup under the pump-probe configuration. The main role of pump laser beam is to saturate the sub-bandgap localized states whose contribution otherwise swamp the information related to the bandgap of material. It also affects the magnitude of Dember voltage in case of semi-insulating (SI) semiconductor substrates. Pump-probe SPS technique enables an accurate determination of the bandgap of semiconductor epitaxial layers even under the strong influence of localized sub-bandgap states. The pump beam is found to be very effective in suppressing the effect of surface/interface and bulk trap states. The overall magnitude of SPV signal is decided by the dependence of charge separation mechanisms on the intensity of the pump beam. On the contrary, an above bandgap cw pump laser can be used to distinguish the signatures of sub-bandgap states by suppressing the band edge related feature. Usefulness of the pump-probe SPS technique is established by unambiguously determining the bandgap of p-GaAs epitaxial layers grown on SI-GaAs substrates, SI-InP wafers, and p-GaN epilayers grown on Sapphire substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

We report on the evidence of a strain-induced piezoelectric field in wurtzite InAs/InP quantum rod nanowires. This electric field, caused by the lattice mismatch between InAs and InP, results in the quantum confined Stark effect and, as a consequence, affects the optical properties of the nanowire heterostructure. It is shown that the piezoelectric field can be screened by photogenerated carriers or removed by increasing temperature. Moreover, a dependence of the piezoelectric field on the quantum rod diameter is observed in agreement with simulations of wurtzite InAs/InP quantum rod nanowire heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Site control technique for quantum dots using electron beam induced deposition

To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

77 NANOSCIENCE AND NANOTECHNOLOGY↗