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At least 775 records · Page 43
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Structural Competition and Reactivity of Rare-Earth Oxide Phases in Y x Pr 2– x O 3 (0.05 ≤ x ≤ 0.80)

We report, for the first time, members of the Y x Pr 2–x O 3 system with non-bixbyite or defect fluorite structures. The synthesis, structure, phase transitions, and high temperature reactivity of the trigonal A-type and monoclinic B-type structures are reported along with those of the cubic C-type phase (bixbyite). Combined powder X-ray and neutron diffraction Rietveld refinements are used to report structural details of all three reported phases. Phase transitions are investigated, showing a clear dependence on average cation size. Using neutron diffraction, phase transitions are followed in situ, revealing that all high temperature phases are quenchable. In-situ powder X-ray diffraction experiments in flowing oxygen allow insights into mechanistic details of redox processes in the reported phases. In contrast to the C-type cubic bixbyite, the trigonal A-type and monoclinic B-type structures do not allow for topotactic oxygen uptake, displaying instead a phase transition to either the bixbyite C-type capable of accommodating additional oxide anions or the direct oxidation to the cubic defect fluorite structure. The findings reported here agree with the accepted lanthanide sesquioxide phase diagrams and provide exceptional control of phases. The work is important for the prediction of structures, and the synthetic control needed for rational design of functional materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Structural dynamics of a thermally silent triiron( II ) spin crossover defect grid complex

The structural evolution of spin crossover (SCO) complexes during their spin transition at equilibrium and out-of-equilibrium conditions needs to be understood to enable their successful utilisation in displays, actuators and memory components. In this study, diffraction techniques were employed to study the structural changes accompanying the temperature increase and the light irradiation of a defect [2 × 2] triiron(II) metallogrid of the form [Fe II 3 L H 2 (HL H ) 2 ](BF 4 ) 4 ·4MeCN (FE3), L H = 3,5-bis{6-(2,2'-bipyridyl)}pyrazole. Although a multi-temperature crystallographic investigation on single crystals evidenced that the compound does not exhibit a thermal spin transition, the structural analysis of the defect grid suggests that the flexibility of the grid, provided by a metal-devoid vertex, leads to interesting characteristics that can be used for intermolecular cooperativity in related thermally responsive systems. Time-resolved photocrystallography results reveal that upon excitation with a ps laser pulse, the defect grid shows the first two steps of the out-of-equilibrium process, namely the photoinduced and elastic steps, occurring at the ps and ns time scales, respectively. Similar to a previously reported [2 × 2] tetrairon(II) metallogrid, FE3 exhibits a local distortion of the entire grid during the photoinduced step and a long-range distortion of the lattice during the elastic step. Although the lifetime of the pure photoinduced high spin (HS) state is longer in the tetranuclear grid than in the defect grid, suggesting that the global nuclearity plays a crucial role for the lifetime of the photoinduced species, the influence of the co-crystalising solvent on the lifetime of the photoinduced HS state remains unknown. This study sheds light on the out-of-equilibrium dynamics of a thermally silent defect triiron SCO metallogrid.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Computational Model and Characterization of Stacking Faults in ZIF-8 Polymorphs

Degradation of metal–organic frameworks (MOFs) in aqueous, humid, and acid gas environments likely begins at defect sites. Until now, however, theoretical studies of MOFs have widely assumed an ideal defect-free structure. Here we present a computational model for low-energy extended defects in bulk zeolitic imidazolate frameworks (ZIFs) that are analogous to stacking faults in zeolites. We demonstrate the thermodynamic accessibility of stacking faults in ZIFs and examine the impact of these defects on pore diffusion and accessible surface area. We identify strong correlations between the defect density of a structure and its X-ray diffraction spectra. Finally, by examining a topologically isomorphic ZIF that has been reported experimentally we find characteristic defect-induced peak broadening and splitting in the reported powder patterns, giving strong evidence for the existence for stacking faults in this material.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Design and performance of optimal detectors for guided wave structural health monitoring

Ultrasonic guided wave measurements in a long term structural health monitoring system are affected by measurement noise, environmental conditions, transducer aging and malfunction. This results in measurement variability which affects detection performance, especially in complex structures where baseline data comparison is required. This paper derives the optimal detector structure, within the framework of detection theory, where a guided wave signal at the sensor is represented by a single feature value that can be used for comparison with a threshold. Three different types of detectors are derived depending on the underlying structure’s complexity: (i) Simple structures where defect reflections can be identified without the need for baseline data; (ii) Simple structures that require baseline data due to overlap of defect scatter with scatter from structural features; (iii) Complex structure with dense structural features that require baseline data. The detectors are derived by modeling the effects of variabilities and uncertainties as random processes. Analytical solutions for the performance of detectors in terms of the probability of detection and false alarm are derived. A finite element model is used to generate guided wave signals and the performance results of a Monte-Carlo simulation are compared with the theoretical performance. initial results demonstrate that the problems of signal complexity and environmental variability can in fact be exploited to improve detection performance.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

Fundamental Insights from a Single-Crystal Sodium Iridate Battery

Electrochemically driven chemical transformations play the key role in controlling storage of energy in chemical bonds and subsequent conversion to power electric vehicles and consumer electronics. The promise of coupling anionic oxygen redox with cationic redox to achieve a substantial increase in capacities has inspired research in a wide range of electrode materials. A key challenge is that these studies have focused on polycrystalline materials, where it is hard to perform precise structural determinations, especially related to the location of light atoms. Here a different approach is utilized and a highly ordered single crystal, Na 2-x IrO 3 is harnessed, to explore the role of defects and structural transformations in layered transition metal oxide materials on redox-activity, capacity, reversibility, and stability. Within a combined experimental and theoretical framework, it is demonstrated that 1) it is possible to cycle Na 2-x IrO 3 , offering proof of principle for single-crystal based batteries 2) structural phase transitions coincide with Ir 4+ /Ir 5+ redox couple with no evident contribution from anionic redox 3) strong irreversibility and capacity fade observed during cycling correlates with the Na + migration resulting in progressive growth of an electrochemically inert O 3 -type NaIrO 3 phase.

25 ENERGY STORAGE↗
DOE OSTI2021

Asymmetric equilibrium core structures of pyramidal-II < c + a > dislocations in ten hexagonal-close-packed metals

The structures of pyramidal-II < c + a > dislocations, one of the most important defects in structural hexagonal-close-packed (HCP) metals, have not been fully characterized for many of the HCP metals in use today. Here, we employ ab initio informed phase-field dislocation dynamics to determine the minimum energy structure of pyramidal {1¯1¯22} < 11¯23 > dislocations in ten HCP metals, including Be, Co, Mg, Re, Ti, Zn, Cd, Hf, Y, and Zr. As input for the simulations, we calculate, using first-principles density functional theory, the {1¯1¯22} generalized stacking fault energy (GSFE) curves for all ten metals. From these calculations, it is found that magnetism in Co is necessary for achieving a local minimum in the GSFE curve. We observe in simulations that edge and screw character dislocations split into two partials separated by a low-energy intrinsic stacking fault. The splitting distance is shown to scale inversely with the local minimum energy normalized by the product of its shear modulus and Burgers vector. Interestingly, some HCP metals exhibit an asymmetric structure, with either unequal partial Burgers vectors or widths, in contrast to the symmetric configuration expected from linear elastic dislocation theory. We explain these structures by properties of the local maxima in their GSFE curves. Metals with larger degrees of elastic anisotropy result in dislocations with larger splitting distances than would be expected under the commonly used assumption of elastic isotropy. Furthermore, these findings on the sizes and asymmetry in the structures of pyramidal-II < c + a > dislocations are fundamental to understanding how these dislocations glide and interact or react with other defects when these metals are mechanically strained.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Defect‐Mediated Ordering of Condensed Water Structures in Microporous Zeolites

Abstract Ab‐initio molecular dynamics simulations and transmission infrared spectroscopy are employed to characterize the structure of water networks in defect‐functionalized microporous zeolites. Thermodynamically stable phases of clustered water molecules are localized at some of the defects in zeolite Beta, which include catalytic sites such as framework Lewis acidic Sn atoms in closed and hydrolyzed‐open forms, as well as silanol nests. These water clusters compete with ideal gas‐like structures at low water densities and pore‐filling phases at higher water densities, with the equilibrium phase determined by the water chemical potential. The physical characteristics of these phases are determined by the defect identity, with the local binding and orientation of hydroxyl moieties around the defects playing a central role. The results suggest general principles for how the structure of polar solvents in microporous solid acids is influenced by local defect functionalization, and the thermodynamic stability of the condensed phases surrounding such sites, in turn, implies that the catalysis of Lewis acids will be influenced by local water ordering.

Bukowski, Brandon C.↗
DOE OSTI2022

Titrating Controlled Defects into Si-LTA Zeolite Crystals Using Multiple Organic Structure-Directing Agents

Controlling defects in zeolites is crucial for tuning their adsorption and catalytic properties. In this work, we have performed an integrated zeolite synthesis, spectroscopy, and density functional theory study to test the limit of F– as a charge-balancing agent that mitigates defects in siliceous zeolites. We focused on the synthesis of siliceous zeolite LTA at 150 °C with 1,2-dimethyl-3-(4-methylbenzyl) imidazolium as the primary organic structure-directing agent (OSDA) and tetramethyl ammonium (TMA) as the secondary OSDA. By varying the amount of TMA in the synthesis gel, positive charges were titrated into the resulting as-made Si-LTA. Surprisingly, we found that greater TMA concentration does not induce more F– to enter into the zeolite. 29Si solid-state MAS NMR, Raman spectroscopy, and density functional theory suggest that this system has surpassed its capacity for F– to balance OSDA charge, and additional positive charge is balanced by Si–O– framework defects. The number of defects in the as-made Si-LTA can be precisely titrated by the amount of TMA in the zeolite structures. For the Si-LTA synthesized without TMA, framework defects formed in the early stage of crystal growth were found to heal during later crystallization, leading to defect-free Si-LTA. However, for the Si-LTA synthesized with TMA, the defects formed in early stages do not heal. A DFT thermodynamic analysis explains that crowding of Si-LTA pores by TMA impedes defect healing; this prediction is corroborated by synthesis experiments at an elevated temperature (170 °C). These results indicate that F– can have a limited capacity to balance OSDA charge in zeolite synthesis, opening up a third route to zeolite synthesis intermediate between the fluoride and hydroxide routes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Pressure-induced order–disorder transitions in β-In 2 S 3 : an experimental and theoretical study of structural and vibrational properties

We report this joint experimental and theoretical study of the structural and vibrational properties of β-In 2 S 3 upon compression shows that this tetragonal defect spinel undergoes two reversible pressure-induced order–disorder transitions up to 20 GPa. We propose that the first high-pressure phase above 5.0 GPa has the cubic defect spinel structure of α-In 2 S 3 and the second high-pressure phase ($\phi$-In 2 S 3 ) above 10.5 GPa has a defect α-NaFeO 2 -type (R$\bar{3}$) structure. This phase, related to the NaCl structure, has not been previously observed in spinels under compression and is related to both the tetradymite structure of topological insulators and to the defect LiTiO 2 phase observed at high pressure in other thiospinels. Structural characterization of the three phases shows that α-In 2 S 3 is softer than β-In 2 S 3 while $\phi$-In 2 S 3 is harder than β-In 2 S 3 . Vibrational characterization of the three phases is also provided, and their Raman-active modes are tentatively assigned. Our work shows that the metastable α phase of In 2 S 3 can be accessed not only by high temperature or varying composition, but also by high pressure. On top of that, the pressure-induced β–α–$\phi$ sequence of phase transitions evidences that β-In 2 S 3 , a B III 2 X V 3 compound with an intriguing structure typical of A II B III 2 X VI 4 compounds (intermediate between thiospinels and ordered-vacancy compounds) undergoes: (i) a first phase transition at ambient pressure to a disordered spinel-type structure (α-In 2 S 3 ), isostructural with those found at high pressure and high temperature in other B III 2 X V 3 compounds; and (ii) a second phase transition to the defect α-NaFeO 2 -type structure ($\phi$-In 2 S 3 ), a distorted NaCl-type structure that is related to the defect NaCl phase found at high pressure in A II B III 2 X VI 4 ordered-vacancy compounds and to the defect LiTiO 2 -type phase found at high pressure in A II B III 2 X VI 4 thiospinels. This result shows that In 2 S 3 (with its intrinsic vacancies) has a similar pressure behaviour to thiospinels and ordered-vacancy compounds of the A II B III 2 X VI 4 family, making β-In 2 S 3 the union link between such families of compounds and showing that group-13 thiospinels have more in common with ordered-vacancy compounds than with oxospinels and thiospinels with transition metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures

The influence of defects in the AlN barrier on photoluminescence decay after pulse excitation is studied for structures with GaN quantum dots in an AlN matrix. For these quantum-dot structures, it is found that the initial part of the decay curves corresponds to fast photoluminescence decay. Comparison of the photoluminescence-decay curves for the GaN/AlN quantum-dot structures and AlN layers without quantum dots shows that fast decay is defined by the contribution of the photoluminescence band related to defects in the AlN matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2017

The native point defects of ternary C14 Laves phase Mg{sub 2}Cu{sub 3}Si: Ab initio investigation

Nine possible native point defects in ternary C14 Laves phase Mg{sub 2}Cu{sub 3}Si are investigated from ab initio calculation based on density function theory. The two-dimensional phase diagram of chemical potentials is determined, and then defect formation energy is calculated. The energetic results show that Cu{sub Si} and Cu{sub Mg} are more favorable over a broad range of chemical potentials. The formation enthalpies for defective Mg{sub 2}Cu{sub 3}Si also demonstrate the same stability. Local distortions around point defects increase from Si{sub Cu} to Si{sub Mg}, showing that the polyhedral symmetry and coordination number for constituent atoms will affect the structure of defects. The electronic structure shows the strong (Cu, Si)–Si covalent bonding, also indicates that the Cu{sub Mg} is favorable because the weak Mg-Cu bonding is replaced by the strong Cu–Cu bonding, whereas Mg{sub Cu} and Mg{sub Si} are unfavorable because the strong Cu–Si bonding is replaced by the weak Mg–(Cu, Si) bonding. - Graphical abstract: Defects formation energy of τ phase as a function of the chemical potential over the stable scopes A-B-C-O-D-A. Display Omitted - Highlights: • The two-dimensional phase diagram of chemical potentials is determined. • The defect Cu{sub Si} and Cu{sub Mg} is more favorable than other defects in Mg{sub 2}Cu{sub 3}Si. • Local distortions from Cu{sub Si} to Mg{sub Si} are similar to the trend of energetic results. • The Mg{sub Cu} and Mg{sub Si} are unfavorable because Cu (Si)–Mg bonding is weaker than Cu-Si. • Mg{sub 2}Cu{sub 3}Si phase has the strong Cu-Si and Si-Si covalent character.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Defects in Arsenic Implanted р{sup +}–n- and n{sup +}–p- Structures Based on MBE Grown CdHgTe Films

Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd{sub x}Hg{sub 1–x}Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n{sup +}–p- and n{sup +}–n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p{sup +}–n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Structures and localized vibrational states of defects in graphite by tight-binding calculations

The structural and vibrational properties of pristine graphite and point defects in graphite are studied by tight-binding (TB) calculations using a three-center TB potential model. We showed that the three-center TB potential without ‘‘ad hoc’’ van der Waals interaction corrections can accurately describe the inter-layer distance of graphite and the lowest-energy structures and stabilities of typical point defects in graphite. The results from our TB calculations are in good agreement with those from density-functional theory calculations with van der Waals interaction corrections. We also investigated the vibrational properties to gain better understanding on the localization of vibrational states induced by the point defects. Our calculation results show that although localized or quasi-localized vibrational modes can be found in all defected graphite, the localization induced by Frenkel pair, dual-vacancy, and dual-interstitial defects is much stronger. Atomic displacements associated with the localized vibrational modes induced by these three point defects are also analyzed

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability

To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this defect on device yield and reliability. Trapezoidal defects in 4H-SiC epitaxial layers were investigated by photoluminescence (PL) imaging, scanning electron microscopy (SEM), cathodoluminescence spectrum imaging (CLSI), SEM electron beam induced current (EBIC) imaging, and by transmission electron microscopy (TEM) observation. The bar-shaped stacking faults were identified by the PL and CL measurements with a peak emission wavelength of 420 and 450 nm. An optoelectronic behavioral study based on the recombination enhanced dislocation glide mechanism revealed how expanding dislocations and stacking faults interact with each other. Combining the luminescence and microscopy results, the nature of the stacking faults was identified as being a combination of Shockley-type and Frank-type stacking faults. The TEM analysis showed that these defects originate from the substrate and the stacking sequences of some of the faults were determined as (…2, 4, 2…) and (…2, 3, 2…) in the Zhdanov's notation by high-resolution TEM. The origin of this defect is speculated based on our results and previous reports. The EBIC imaging showed that the high density of SFs in these towers is a strong site of carrier recombination, which presumably has an impact on the transfer characteristics of SiC devices. Furthermore, these defects have shown to impact metal oxide semiconductor field effect transistors electrical performance via an increase in the on-state resistance depending on the coverage percentage of the tower of defects in the active area of the device.

4H-SiC↗