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At least 775 records · Page 43

Controlled Dy-doping to nickel-rich cathode materials in high temperature aerosol synthesis

Layered nickel-rich materials are promising next-generation cathode materials for lithium ion batteries due to their high capacity and low cost. However, the poor thermal stability and longtime cycling performance hinders the commercial applications of high nickel materials. Doping with heteroatoms has been an effective approach for improving electrochemical performance of cathode materials. Controlling doping concentration and geometrical distribution is desired for optimal electrochemical performance, but it is challenging in traditional co-precipitation methods. In this work, controlled dysprosium (Dy) doping to NCM811 was studied in an aerosol synthesis method by controlling the precursor concentrations and heating parameters. The obtained materials were characterized by SEM, XRD, and XPS, and their electrochemical properties and thermal stability were evaluated. By controlling the doping concentration (1.5%), Dy-doped NCM811 was improved simultaneously in long-term cycling and high-rate performance. Here, the thermal-chemical stability of the Dy-doped cathode materials was examined in a microflow reactor with a mass spectrometer. The results showed that Dy-doping shifted the O 2 onset temperature to a higher temperature and reduced O 2 release by 80%, thus dramatically increasing the thermal-chemical stability and improving the fire safety of cathode materials. Since high temperature aerosol synthesis is a low-cost and scalable method, the findings in this work have broad implications for commercial synthesis of novel materials with controlled doping modification to achieve high electrochemical performance and safety in lithium ion batteries.

25 ENERGY STORAGE↗

Unidirectional Magneto-Resistance in Modulation-Doped Magnetic Topological Insulators

Nonlinear unidirectional spin Hall magnetoresistance (USMR) has been reported in heavy metal/ferromagnet bilayers, which could be employed as an effective method in detecting the magnetization orientation in spintronic devices with 2-terminal geometry. Recently, another unidirectional magnetoresistance (UMR) was reported in magnetic topological insulator (TI)-based heterostructures at cryogenic temperature, whose amplitude is orders of magnitude larger than the USMR measured in heavy metal-based magnetic heterostructures at room temperature. Here, we report the UMR effect in the modulation-doped magnetic TI structures. This UMR arises due to the interplay between the magnetic dopant’s magnetization and the current-induced surface spin polarization, when they are parallel or antiparallel to each other in the TI material. By varying the dopant’s position in the structure, we reveal that the UMR is mainly originating from the interaction between the magnetization and the surface spin-polarized carriers (not bulk carriers). Furthermore, from the magnetic field-, the angular rotation-, and the temperature-dependence, we highlight the correlation between the UMR effect and the magnetism in the structures. The large UMR versus current ratio in TI-based magnetic bilayers promises the easy readout in TI-based spintronic devices with 2-terminal geometry.

42 ENGINEERING↗

Nitrogen-doped char as a catalyst for wet oxidation of phenol-contaminated water

Catalytic wet oxidation (CWO) of aqueous effluents rich in organic compounds is a very promising technology for the treatment of liquid wastes from biomass conversion processes. CWO reactions occur through the formation of free radical species, produced in the presence of an oxidant, which act on organic contaminates in the effluent. Although the reaction is well known, there exists a lack of affordable catalysts to conduct this process at the lower temperatures and pressures in novel bioenergy processes. Here, this study assessed the catalytic effect of nitrogen-doped chars as such an option. Phenol in aqueous solution was used as a model waste effluent. Treatment was conducted at moderate temperatures (190 to 260 °C), oxygen partial pressure of 1 MPa, and reaction times of 15, 30, and 45 min in stainless steel and glass-lined tube reactors. High pressure liquid chromatography (HPLC) analyses of the products quantified phenol and by-product concentrations used in the calculation of reaction activation energy. The char catalyst was studied by X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and scanning electron microscopy (SEM) in order to gain insight into its structure and surface composition. The results indicate that nitrogen-doped char catalysts accelerate the oxidation of phenol by decreasing its reaction activation energy from 82.2 kJ/mol (non-catalyzed) to 40.4 kJ/mol (catalyzed). An analysis from first principles using density functional theory (DFT) was conducted to ascertain which N functional group has the most significant impact on free radical formation in the presence of oxygen. Among all the N functional groups studied, the dipyridinic functional groups showed the most promising characteristics to facilitate the formation of hydroxyl free radicals.

Advanced Oxidation Processes for Organic Pollutant↗

Atomic-scale 3D structural dynamics and functional degradation of Pt alloy nanocatalysts during the oxygen reduction reaction

Pt-based electrocatalysts are the primary choice for fuel cells due to their superior oxygen reduction reaction (ORR) activity. To enhance ORR performance and durability, extensive studies have investigated transition metal alloying, doping, and shape control to optimize the three key governing factors for ORR: geometry, local chemistry, and strain of their surface and subsurface. However, systematic optimization remains incomplete, as it requires an atomic-scale understanding of these factors and their dynamics over potential cycling, as well as their relationship to ORR activity. Here, we implement neural network-assisted atomic electron tomography to measure the 3D atomic structural dynamics and their effects on the functional degradation of PtNi alloy catalysts. Our results reveal that PtNi catalysts undergo shape changes, surface alloying, and strain relaxation during cycling, which can be effectively mitigated by Ga doping. By combining geometry, local chemistry, and strain analysis, we calculated the changes in ORR activity over thousands of cycles and observed that Ga doping leads to higher initial activity and greater stability. These findings offer a pathway to understanding 3D atomic structural dynamics and their relation to ORR activity during cycling, paving the way for the systematic design of durable, high-efficiency nanocatalysts.

Jeong, Chaehwa↗

Enhancement‐Mode PEDOT:PSS Organic Electrochemical Transistors Using Molecular De‐Doping

Abstract Organic electrochemical transistors (OECTs) show great promise for flexible, low‐cost, and low‐voltage sensors for aqueous solutions. The majority of OECT devices are made using the polymer blend poly(ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), in which PEDOT is intrinsically doped due to inclusion of PSS. Because of this intrinsic doping, PEDOT:PSS OECTs generally operate in depletion mode, which results in a higher power consumption and limits stability. Here, a straightforward method to de‐dope PEDOT:PSS using commercially available amine‐based molecular de‐dopants to achieve stable enhancement‐mode OECTs is presented. The enhancement‐mode OECTs show mobilities near that of pristine PEDOT:PSS (≈2 cm 2 V −1 s −1 ) with stable operation over 1000 on/off cycles. The electron and proton exchange among PEDOT, PSS, and the molecular de‐dopants are characterized to reveal the underlying chemical mechanism of the threshold voltage shift to negative voltages. Finally, the effect of the de‐doping on the microstructure of the spin‐cast PEDOT:PSS films is investigated.

Keene, Scott T.↗

Confirmation of Incorporation of Cu and Se Ions in Applied p- and n-Type-Doped Sb2S3 by Photoemission Spectroscopy

The effect of incorporating copper (Cu) and selenium (Se) ions into stibnite (Sb2S3) lattice was investigated using x-ray photoelectron spectroscopy (XPS). The incorporation of Cu and Se ions was verified by comparing the XPS spectra of the undoped (amorphous Sb2S3), doped (p and n-doped) and pure Se and Cu-acetate powders. The main photoelectron Cu 2p(1/2) (951.8 eV) and Cu 2p(3/2) (932.1 eV) lines derived from the Cu-doped and Cu-acetate powder samples were clearly observed, whereas in the undoped sample, none of the characteristic lines of Cu were detected. The Se Auger line (138.6 eV), the only line of Se which does not coincide with the lines of Sb and S, was successfully detected in an Se-doped XPS sample and the spectrum of pure Se, while Se in the undoped sample was not found. Further, the XPS measurements revealed the relative amounts of Cu and Se in antimony sulfide, as well as the oxidation state of copper incorporated into the matrix.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The Photorefractive and Photovoltaic Properties of a Composite Based on Ferroelectric Polymer Doped with Carbon Nanotubes

The photorefractive effect is obtained in a composite of a ferroelectric polymer (polyvinylidene fluoride with trifluoroethylene (P(VDF/TrFE)) and single-walled carbon nanotubes (SWCNTs), which serve simultaneously as non-linear optical chromophores and spectral sensitizers to a 1064-nm laser beam. It is established that the presence of internal field in the ferroelectric makes it possible to measure the photorefractive effect in the absence of applied external field. Undoped films of VDF/TrFE copolymer are not photosensitive and do not exhibit the bulk photovoltaic effect (BPE). BPE is observed (along with the photosensitivity) in polarized samples, when carbon nanotubes are introduced into the copolymer.

36 MATERIALS SCIENCE↗

Strongly Correlated Charge Density Wave in La 2 – x Sr x CuO 4 Evidenced by Doping-Dependent Phonon Anomaly

The discovery of charge-density-wave-related effects in the resonant inelastic x-ray scattering spectra of cuprates holds the tantalizing promise of clarifying the interactions that stabilize the electronic order. In this paper, we report a comprehensive resonant inelastic x-ray scattering study of La 2 – x Sr x CuO 4 finding that charge-density wave effects persist up to a remarkably high doping level of x = 0.21 before disappearing at x = 0.25 . The inelastic excitation spectra remain essentially unchanged with doping despite crossing a topological transition in the Fermi surface. This indicates that the spectra contain little or no direct coupling to electronic excitations near the Fermi surface, rather they are dominated by the resonant cross section for phonons and charge-density-wave-induced phonon softening. We interpret our results in terms of a charge-density wave that is generated by strong correlations and a phonon response that is driven by the charge-density-wave-induced modification of the lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗

Determining the Concentration of Free Electrons in n-InSb from Far-Infrared Reflectance Spectra with Allowance for Plasmon–Phonon Coupling

Contactless nondestructive testing is a means for determining the concentration of free electrons N in indium antimonide (InSb) samples from far-infrared reflectance spectra recorded at room temperature. A computer program capable of determining the characteristic wave number from the Kramers–Kronig relation is developed. The calculated calibration dependence makes it possible to determine the electron concentration from the known characteristic wave number. It is shown that this dependence is described by a cubic polynomial. In the calculations, the energy dependence of the electron effective mass is taken into account. It is established that, in determining the electron concentration, account must be taken of plasmon–phonon coupling, specifically at N ≤ 5 × 10{sup 17} cm{sup –3}. The systematic error introduced into the determination of N by disregard of plasmon–phonon coupling is estimated. The software elaborated here makes it possible to calculate the electron concentration N from experimental reflectance spectra and to store and process the results. The software is tested by the example of the reflectance spectrum of heavily doped n-InSb.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Non-linearity effects on the light-output calibration of light charged particles in CsI(Tl) scintillator crystals

The light output produced by light ions ( Z ≤ 4) in Csl(Tl) crystals is studied over a wide range of detected energies (E ≤ 300 MeV). Energy-light calibration data sets are obtained with the 10 cm crystals in the recently upgraded High-Resolution Array (HiRA10). We use proton recoil data from 40,48 Ca + CH 2 at 28 MeV/u, 56.6 MeV/u, 39 MeV/u and 139.8 MeV/u and data from a dedicated experiment with direct low-energy beams. We also use the punch through points of p, d, and t particles from 40,48 Ca + 56,64 Ni, 112,124 Sn collisions reactions at 139.8 MeV/u. Non-linearities, arising in particular from Tl doping and light collection effects in the CsI crystals, are found to significantly affect the light output and therefore the calibration of the detector response for light charged particles, especially the hydrogen isotopes. A new empirical parametrization of the hydrogen light output, $L(E,Z=1,A)$, is proposed to account for the observed effects. Results are found to be consistent for all 48 CsI(Tl) crystals in a cluster of 12 HiRA10 telescopes.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Improving Proton Conductivity by Navigating Proton Trapping in High Scandium-Doped Barium Zirconate Electrolytes

Proton-conducting oxides are used in intermediate-temperature (300 °C < T < 700 °C) applications of fuel cells, electrolyzers, membrane reactors, hydrogen pumps, and sensors. The proton conductivity of doped ABO 3 perovskites is partly dependent on the proton concentration and hence on the level of material hydration. However, how the material hydration ability is affected by differences in doping is not fully understood. Here, we show the prospect of proton trapping and detrapping that influences material hydration and dehydration. The proton-trapping influence is significant for Sc-doped BaZrO 3 compared to Y-doped BaZrO 3 . Here, our work offers a perspective to understand how defect interaction/associations influence the hydration ability of proton-conducting oxides. Furthermore, positron annihilation lifetime spectroscopy was revealed to be a valuable technique for studying the proton-trapping phenomena and the defect chemistry of dense proton conductors. Density functional theory calculations also showed that a high hydration level in Sc-doped BaZrO 3 boosts proton migration. In contrast, the effect of boosting the proton migration due to increased hydration is limited for Y-doped BaZrO 3 . This effect, in turn, might explain the trend of conductivity with dopant concentration in doped BaZrO 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Low Regeneration Temperature Sorbents for Direct Air Capture of CO 2

Susteon Inc., in partnership with University of Wyoming and SoCalGas, successfully met all major technical objectives to (1) scale up the ionic liquid catalyst for amine-based sorbents for improved desorption and absorption kinetics, (2) evaluate the catalyzed amine-based sorbents for direct CO 2 capture process to determine CO 2 adsorption and desorption rates and energy requirements, and (3) based on the experimental results, develop a conceptual process design to perform a preliminary economic assessment to evaluate the potential for DAC process cost reduction using the catalyzed sorbents. Amine doped solid sorbents are effective for DAC applications and can be regenerated by heat or by a combination of heat, steam, and vacuum. The best sorbent composition identified was polyethyleneimine (PEI) on fumed silica with 200 ppm ionic liquid catalyst. This sorbent formulation was shown to have a CO 2 breakthrough capacity twice that of the non-catalyzed sorbent, in laboratory tests with air at 75% relative humidity (RH). The CO 2 adsorption rate was also 40% higher than that of the non-catalyzed sorbent. This type of sorbents has the attributes required for lowering the overall cost of DAC with high CO 2 capacity and high rate of adsorption. The combination of an industrially utilized amine-based sorbent with a highly active catalyst to form a new class of materials for DAC provides a technically viable pathway for reducing the cost of DAC to <$100/tonne of CO 2 . Laboratory measurements show that the silica/PEI (polyethyleneimine) sorbents with 100 ppm of ionic liquid catalyst have almost 100% higher CO 2 cyclic capacity and 40% higher adsorption rate. Generally, CO 2 desorption occurred at higher temperatures with a rate of desorption 10 times faster than adsorption (which occurred at ambient conditions). Therefore, adsorption rate is a much more important factor in the cost of DAC because it is directly linked to the CAPEX of the total system and the cycle time (i.e., sorbent productivity in ton/day of CO 2 captured per unit volume of the air contactor). An initial process design, coupled with techno-economic analysis, based on optimal experimental results and preliminary resulting from structured sorbent testing, showed a path to lower the DAC cost from the current cost of over $200/tonne CO 2 to less than $100/tonne with a scale-up, mature state of the technology, with projected material and process improvements. These results demonstrate the effectiveness of the catalyst in silica/PEI sorbents in enhancing sorbents’ CO 2 working capacity, in (a) increasing the rate of adsorption and desorption, and (b) in lowering the CAPEX and OPEX of the DAC system employing the ionic liquid catalyzed sorbents.

01 COAL, LIGNITE, AND PEAT↗

Effects of HFIR neutron irradiation on fracture toughness properties of standard and Ni-doped F82H

F82H is the Japanese reference reduced-activation ferritic-martensitic (RAFM) steel for fusion blanket applications. The harsh environment of a fusion reactor, such as neutron irradiation and He/H damage, can result in significant degradation of F82H fracture toughness. Therefore, understanding the fracture toughness behavior of F82H in the fusion environment is critical to ensure the long-term safe operation of the fusion reactor. Here, we summarize seven irradiation campaigns of the High Flux Isotope Reactor (HFIR) at Oak Ridge National Laboratory (ORNL) covering five variants of F82H steels, including F82H IEA, F82H Mod3, F82H doped with 1.4% natural Ni, F82H doped with 1.4% 58 Ni, and F82H doped with 1.4% 60 Ni. The irradiation temperatures covered the range from 220 °C to 530 °C and the neutron irradiation dose spanned 4 dpa to 70 dpa. The effects of neutron irradiation temperature, dose, materials composition, Ni doping, and He production on F82H fracture toughness are discussed. Our results showed that irradiation embrittlement monotonically decreased with increasing irradiation temperature until 400 °C for F82H IEA and F82H Mod3. F82H Mod3 showed better fracture toughness than F82H IEA both before and after neutron irradiation. We determined that 1.4% Ni alloying can be applied to F82H for simulating He effect in a fission reactor without jeopardizing the fracture toughness of the material. However, more studies are needed to understand the effect of high dose (>20 dpa) and He production on F82H fracture toughness.

36 MATERIALS SCIENCE↗

Overcash, D. R.

The objectives of this investigation were to determine the characteristics of semiconductor devices at low temperatures. The output characteristics of several currently available semiconductor devices and devices fabricated at Marshall Space Flight Center were measured over a range of gate voltages. Large variations in low-temperature performance, not only from type to type, but from field effect transistor (FET) to FET of the same type were obtained. By increasing the carrier concentrations at low temperatures through extra heavy doping, metal oxide semiconductor field effect transistor (MOSFET) device was fabricated that operated at 4.2K. To verify the low-temperature operation of a heavily doped device, this procedure was repeated. Their noise spectrum was analyzed at 4.2K. Suggestions were made as to possible fabrication methods, techniques, and other semiconductor materials that might improve the device charactersitics at low temperatures. A procedure for using an electric field to drift dopants through the insulating oxide to produce a very thin, heavily doped region under the gate of a MOSFET was initiated. Capacitance s a function of voltage plots was suggested as a method for determining the level of dopant drift.

Source record↗

Activating dislocation mediated plasticity in boron carbide through Al-doping

Dislocation slip, deformation twinning, phase transformations, and fast fracture are energy dissipation mechanisms that accommodate mechanical loading in materials. The energetically unfavorable formation of dislocation attributes to the ease of cracking and the low damage tolerance observed in superhard ceramics, notably boron carbide. Here, this work demonstrates that room temperature dislocation slip can be enabled in boron carbide by altering its chemistry through Al doping. The activation of dislocation slip is mechanistically explained by quantum mechanics simulations and electron microscopy, which indicate that strain energy is released through basal icosahedral slip facilitated by icosahedral rotation and chain bond breaking and reconfiguring. The new insight gained through this work suggests that atomic doping could be an effective strategy to tune deformation mechanisms in boron carbide, which provides a significant potential for limiting amorphization and catastrophic failure, and opens a new strategy to enhance damage tolerance in brittle ceramics.

36 MATERIALS SCIENCE↗

Fe-doping induced suppression of the second magnetic transition in Sr 4 Ru 3 O 10

Ruthenium oxide (Sr 4 Ru 3 O 10 ) exhibits a second magnetic transition at a temperature T M below its ferromagnetic (FM) transition (T C ~ 105 K), which has attracted considerable attention in the past two decades. Here, we successfully grew Sr 4 (Ru 1–x Fe x ) 3 O 10 (x = 0.01) crystal and systematically investigated the magnetotransport property of its nanosheets. We found a feature that there is an in-plane FM order aligned along < 110 > directions below T C without the occurrence of the second magnetic transition at T M , which is in contrast to that expected in pure Sr 4 Ru 3 O 10 nanosheets, where the in-plane FM order will rotate to the c direction below T M . Furthermore, a metamagnetic-like transition is also observed below ~50 K at about 2 T when the magnetic field is applied along the c axis. Finally, these results unambiguously demonstrate that the second magnetic transition at T M is actually a consequence of spin reorientation induced by the inherent coupling between the spin and lattice, which can be effectively tuned by element doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗