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Electronic and vibrational properties of lithium doped graphene
In the frame-work of density functional theory calculation, using planewave pseudopotentials within local density approximation, the electronic and vibrational properties of graphene supercell by adsorption of lithium at three different sites top, hollow and bridge, have been systematically investigated and analyzed. We found that the hollow site is the most favorable site having lowest energy and positive phonon frequency throughout Brillouin zone indicating dynamical stability.
Electronic structure and magnetism of Mn-doped GaSb for spintronic applications: A DFT study
We have carried out first-principles spin polarized calculations to obtain comprehensive information regarding the structural, magnetic, and electronic properties of the Mn-doped GaSb compound with dopant concentrations: x = 0.062, 0.083, 0.125, 0.25, and 0.50. The plane-wave pseudopotential method was used in order to calculate total energies and electronic structures. It was found that the Mn{sub Ga} substitution is the most stable configuration with a formation energy of ∼1.60 eV/Mn-atom. The calculated density of states shows that the half-metallic ferromagnetism is energetically stable for all dopant concentrations with a total magnetization of about 4.0 μ{sub B}/Mn-atom. The results indicate that the magnetic ground state originates from the strong hybridization between Mn-d and Sb-p states, which agree with previous studies on Mn-doped wide gap semiconductors. This study gives new clues to the fabrication of diluted magnetic semiconductors.
Comparison of temperature and doping dependence of elastoresistivity near a putative nematic quantum critical point
Abstract Strong electronic nematic fluctuations have been discovered near optimal doping for several families of Fe-based superconductors, motivating the search for a possible link between these fluctuations, nematic quantum criticality, and high temperature superconductivity. Here we probe a key prediction of quantum criticality, namely power-law dependence of the associated nematic susceptibility as a function of composition and temperature approaching the compositionally tuned putative quantum critical point. To probe the ‘bare’ quantum critical point requires suppression of the superconducting state, which we achieve by using large magnetic fields, up to 45 T, while performing elastoresistivity measurements to follow the nematic susceptibility. We performed these measurements for the prototypical electron-doped pnictide, Ba(Fe 1− x Co x ) 2 As 2 , over a dense comb of dopings. We find that close to the putative quantum critical point, the elastoresistivity appears to obey power-law behavior as a function of composition over almost a decade of variation in composition. Paradoxically, however, we also find that the temperature dependence for compositions close to the critical value cannot be described by a single power law.
The Electronic Structures and Ferromagnetism of Cu-Doped ZnO: the First-Principle Calculation Study
We have carried out first-principle spin-polarized calculations to investigate the electronic structures and the magnetic properties of Cu-doped wurtzite ZnO. It was found that the Cu{sub Zn} substitution can introduce 1 μ{sub B} local magnetic moment into the doped system, whereas the ferromagnetic coupling between Cu{sub Zn}s is so weak that the system cannot keep ferromagnetism at higher temperature. In Zn vacancy (V{sub Zn}) and Cu{sub Zn} coexisted system, Cu is in the Cu {sup 2+}/Cu {sup 3+} mixed valence under the influence of acceptor defect V{sub Zn}. Cu-3d electrons couple with O(around V{sub Zn})-sp electrons and then form Cu{sup 2+} −V{sub Zn} −Cu{sup 2+} or Cu{sup 2+} −VZn−−Cu{sup 3+} bound magnetic polaron (BMP) in the range of 1.27 ∼ 1.90 nm. The overlapping between BMPs is the main ferromagnetism origin of ZnO/Cu. According to our analysis, we thought that ZnO/Cu system will display stronger ferromagnetism when the Cu concentration attains 3% in atomic percentage. The calculated results and analysis will shed light on the origin of ferromagnetism in ZnO/Cu.
Combined doping and geometry effects on transferred-electron bulk instabilities
Transferred electron bulk negative differential conductivity devices, analyzing combined doping and geometry effects on space charge and domain dynamics
Well-ordered monolayers of alkali-doped coronene and picene: Molecular arrangements and electronic structures
Adsorptions of alkali metals (such as K and Li) on monolayers of coronene and picene realize the formation of ordered phases, which serve as well-defined model systems for metal-intercalated aromatic superconductors. Upon alkali-doping of the monolayers of coronene and picene, scanning tunneling microscopy and X-ray absorption spectroscopy revealed the rearrangement of the entire molecular layer. The K-induced reconstruction of both monolayers resulted in the formation of a structure with a herringbone-like arrangement of molecules, suggesting the intercalation of alkali metals between molecular planes. Upon reconstruction, a shift in both the vacuum level and core levels of coronene was observed as a result of a charge transfer from alkali metals to coronene. In addition, a new density of states near the Fermi level was formed in both the doped coronene and the doped picene monolayers. This characteristic electronic feature of the ordered monolayer has been also reported in the multilayer picene films, ensuring that the present monolayer can model the properties of the metal-intercalated aromatic hydrocarbons. It is suggested that the electronic structure near the Fermi level is sensitive to the molecular arrangement, and that both the strict control and determinations of the molecular structure in the doped phase should be important for the determination of the electronic structure of these materials.
Electronic Detection of Oxygen Adsorption and Size-Specific Doping of Few-Atom Gold Clusters on Graphene
Graphene's sensitivity to adsorbed particles has attracted widespread attention because of its potential sensor applications. Size-selected few-atom clusters are promising candidates as adparticles to graphene. Due to their small size, physicochemical properties are dominated by quantum size effects. In particular, few-atom gold clusters demonstrate a significant catalytic activity in various oxidation reactions. In this joint experimental and computational work, size-selected gold clusters with 3 and 6 atoms adsorbed on graphene field-effect transistors and their interaction with molecular oxygen are investigated. While oxygen adsorbs at both cluster sizes, there is a pronounced cluster size dependence in the corresponding doping, as demonstrated via first-principle calculations and electronic transport measurements. Furthermore, the doping of gold cluster decorated graphene changes sign from n- to p-doping upon oxygen adsorption, directly evidencing electron transfer to the oxygen molecules and hence their activation. These observations pinpoint graphene as a valuable platform to investigate and exploit size-dependent cluster properties.
Mapping out the emergence of topological features in the highly alloyed topological Kondo insulators Sm 1-$x$ M $x$ B 6 ( M =Eu, Ce)
SmB 6 is a strongly correlated material that has been attributed as a topological insulator and a Kondo insulator. Recent studies have found the topological surface states and low temperature insulating character to be profoundly robust against magnetic and nonmagnetic impurities. Here, we use angle resolved photoemission spectroscopy to chart the evolution of topologically linked electronic structure features versus magnetic doping and temperature in Sm 1-$x$ M $x$ B 6 ( M =Eu, Ce). Topological coherence phenomena are observed out to ~30% Eu and 50% Ce concentrations that represent extreme nominal hole and electron doping, respectively. Finally, theoretical analysis reveals that a recent redesignation of the topologically inverted band symmetries provides a natural route to reconciling the persistence of topological surface state emergence even as the insulating gap is lost through decoherence.
Tunable Dopants with Intrinsic Counterion Separation Reveal the Effects of Electron Affinity on Dopant Intercalation and Free Carrier Production in Sequentially Doped Conjugated Polymer Films
Carrier mobility in doped conjugated polymers is limited by Coulomb interactions with dopant counterions. This complicates studying the effect of the dopant’s oxidation potential on carrier generation because different dopants have different Coulomb interactions with polarons on the polymer backbone. In this work, dodecaborane (DDB)-based dopants are used, which electrostatically shield counterions from carriers and have tunable redox potentials at constant size and shape. DDB dopants produce mobile carriers due to spatial separation of the counterion, and those with greater energetic offsets produce more carriers. Neutron reflectometry indicates that dopant infiltration into conjugated polymer films is redox-potential-driven. Remarkably, X-ray scattering shows that despite their large 2-nm size, DDBs intercalate into the crystalline polymer lamellae like small molecules, indicating that this is the preferred location for dopants of any size. These findings elucidate why doping conjugated polymers usually produces integer, rather than partial charge transfer: dopant counterions effectively intercalate into the lamellae, far from the polarons on the polymer backbone. Finally, it is shown that the IR spectrum provides a simple way to determine polaron mobility. Overall, higher oxidation potentials lead to higher doping efficiencies, with values reaching 100% for driving forces sufficient to dope poorly crystalline regions of the film.
Retraction: “Study of electronic structure and magnetization correlations in hydrogenated and vacuum annealed Ni doped ZnO” [J. Appl. Phys. 109, 063907 (2011)]
No abstract prepared.
Erratum: “Electronic structure and thermoelectric properties of p-type Ag-doped Mg{sub 2}Sn and Mg{sub 2}Sn{sub 1−x}Si{sub x} (x = 0.05, 0.1)” [J. Appl. Phys. 116, 153706 (2014)]
No abstract prepared.
Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers
Influence corresponding to the position of {delta}-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower {delta}-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper {delta}-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower {delta}-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.
Charge and magnetic states of Mn-, Fe-, and Co-doped monolayer MoS{sub 2}
First-principles calculations have been performed to investigate the electronic and magnetic properties of monolayer MoS{sub 2} substitutionally doped with Mn, Fe, and Co in possible charge states (q). We find that the Mn, Fe, and Co dopants substituting for a Mo atom in monolayer MoS{sub 2} (Mn@Mo, Fe@Mo, and Co@Mo) are all magnetic in their neutral and charge states except in the highest positive charge states. Mn@Mo, Fe@Mo, and Co@Mo have the same highest negative charge states of q=−2 for chemical potential of electron just below the conduction band minimum, which corresponds to the electron doping. In the q=−2 state, Mn@Mo has a much larger magnetic moment than its neutral state with the antiferromagnetic coupling between the Mn dopant and its neighboring S atoms maintained, while Fe@Mo and Co@Mo have equal or smaller magnetic moments than their neutral states. The possible charge states of Mn@Mo, Fe@Mo, and Co@Mo and the variation of the magnetic moments for different dopants and charge states are due to the change of the occupation and energy of the anti-bonding defect levels in the band gap. The rich magnetic properties of the neutral and charge states suggest possible realization of the substitutionally Mn-, Fe-, and Co-doped monolayer MoS{sub 2} as dilute magnetic semiconductors.
Using the 18-Electron Rule To Understand the Nominal 19-Electron Half-Heusler NbCoSb with Nb Vacancies
The 18-electron rule is a widely used criterion in the search for new half-Heusler thermoelectric materials. However, several 19-electron compounds such as NbCoSb have been found to be stable and exhibit thermoelectric properties rivaling state-of-the art materials. Using synchrotron X-ray diffraction and density functional theory calculations, we show that samples with nominal (19-electron) composition NbCoSb actually contain a half-Heusler phase with composition Nb0.84CoSb. The large amount of stable Nb vacancies reduces the overall electron count, which brings the stoichiometry of the compound close to an 18-electron count, and stabilizes the material. Excess electrons beyond 18 electrons provide heavy doping needed to make these good thermoelectric materials. This work demonstrates that considering possible defect chemistry and allowing small variation of electron counting leads to extra degrees of freedom for tailoring thermoelectric properties and exploring new compounds. Here we discuss the 18-electron rule as a guide to find defect-free half-Heusler semiconductors. Other electron counts such as 19-electron NbCoSb can also be expected to be stable as n-type metals, perhaps with cation vacancy defects to reduce the electron count.
Spectroscopic investigation of nitrogen doped graphene
Current research efforts are aimed at controlling the electronic properties via doping graphene. Previously, dopant-induced changes in the Fermi velocity were observed to result in an effectively downshifted Raman peak below the G Prime -band for n-doped carbon nanotubes. However, in the case of N-doped graphene, we find that several Raman features vary depending upon both dopant concentration and its bonding environment. For instance, only pyridinic/pyrrolic dopants were observed to result in intense D/D Prime -bands with a concomitant downshift in the G Prime -band. Here, we correlate x-ray photoelectron measurements with Raman spectra to elucidate effects of dopant bonding configuration on vibrational properties of graphene.
Metallization and spin fluctuations in Cu-doped lead apatite
An electronic structure and magnetic properties analysis of the recently proposed Cu-doped lead apatite is performed. Here, we show that electronic structures of differently Cu-substituted structures are characterized by localized molecular Cu-O bands at or near the Fermi level. The Cu substitutions can happen at both Pb1 and Pb2 sites, leading to metallic and semiconducting systems differently. The electronic systems in these bands are highly unstable magnetically and form clusters of rigidly ferromagnetically coupled magnetic moments on Cu and neighboring oxygen atoms with a total moment of about 1µ B . The ground state of uniformly Cu-doped lead apatite appears to be magnetic and semiconducting. The nonuniform distribution of two Cu atoms at the nearest Pb2 sites leads to an antiferromagnetic semiconducting state with formation energy close to uniformly distributed Cu configurations. The inclusion of quantum spin fluctuations confirms the stability of magnetic Cu-O clusters. Our calculations revealed the absence of the long-range magnetic order between uniformly distributed Cu-O clusters, creating the spin glass type of system.
Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-doped
The crystal and electronic structures, energy, kinetic, and magnetic characteristics of n-HfNiSn semiconductor heavily doped with a Lu acceptor impurity in the ranges T = 80–400 K and N{sub A}{sup Lu} ≈ 1.9 × 10{sup 20}−1.9 × 10{sup 21} cm{sup −3} (x = 0.01–0.10) at H ≤ 10 kG is studied. The nature of the structural-defect generation mechanism leading to changes in the band gap and the degree of semiconductor compensation is determined. Its essence is the simultaneous reduction and elimination of donor-type structural defects due to the displacement of ∼1% of Ni atoms from the Hf (4a) site, the generation of acceptor-type structural defects by substituting Ni atoms with Lu atoms at the 4c site, and the generation of donor-type defects such as vacancies at the Sn (4b) site. The results of calculations of the electronic structure of Hf{sub 1−x}Lu{sub x}NiSn are in agreement with experimental data. The results are discussed within the model of a heavily doped and compensated Shklovskii-Efros semiconductor.